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公开(公告)号:US20080053487A1
公开(公告)日:2008-03-06
申请号:US11846890
申请日:2007-08-29
IPC分类号: B08B1/02
CPC分类号: B08B3/024 , F26B5/08 , H01L21/02057 , H01L21/67028 , H01L21/67034 , H01L21/67051
摘要: A method capable of eliminating occurrence of a development failure when a DI water discharge nozzle 20 is scanned to dry a substrate by spinning is provided. A substrate W is held in a horizontal posture by a spin chuck 10 and rotated about a vertical axis by a rotation motor 14, and when an outlet of the nozzle 20 is scanned from a position opposed to a center of the substrate W to a position opposed to a circumferential edge while a cleaning solution being discharged, immediately after the nozzle 20 has started to move, only one dried core is produced in the vicinity of the center of the substrate W, and thus production of not less than two dried cores in the vicinity of the center of the substrate W is prevented. The dried region is spread all over the surface of the substrate W.
摘要翻译: 提供了当去除去离子水喷嘴20被扫描以通过纺丝干燥基板时能够消除显影破坏的发生的方法。 基板W由旋转卡盘10保持在水平姿态,并通过旋转马达14绕垂直轴旋转,并且当喷嘴20的出口从与基板W的中心相对的位置扫描到位置 在喷嘴20开始移动之后立即排出清洗液时,与圆周边缘相对,在基板W的中心附近仅产生一个干燥的芯,从而在基板W的中心生成不少于2个的干燥芯 防止了基板W的中心附近。 干燥的区域遍布衬底W的整个表面。
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公开(公告)号:US20050205113A1
公开(公告)日:2005-09-22
申请号:US11081266
申请日:2005-03-16
申请人: Osamu Tamada , Masakazu Sanada
发明人: Osamu Tamada , Masakazu Sanada
CPC分类号: H01L21/6715 , H01L21/67051
摘要: A processing solution supply nozzle is moved relatively from one end to the opposite end of a semiconductor wafer having undergone a developing operation while discharging an anti-static processing solution in a discharge width equal to or greater than the width of the semiconductor wafer. The anti-static processing solution is thereby supplied onto the semiconductor wafer. The prevention of charging of the substrate avoids the occurrence of defects. The processing solution supplied almost uniformly on the entire surface of the substrate also avoids the occurrence of defects.
摘要翻译: 处理溶液供给喷嘴相对于已经经历显影操作的半导体晶片的一端相对移动,同时以等于或大于半导体晶片的宽度的放电宽度排出防静电处理溶液。 由此将抗静电处理液供给到半导体晶片上。 防止基板充电,避免了缺陷的发生。 在基板的整个表面上几乎均匀地提供的处理溶液也避免了缺陷的发生。
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公开(公告)号:US09059221B2
公开(公告)日:2015-06-16
申请号:US11846890
申请日:2007-08-29
CPC分类号: B08B3/024 , F26B5/08 , H01L21/02057 , H01L21/67028 , H01L21/67034 , H01L21/67051
摘要: A method capable of eliminating occurrence of a development failure when a DI water discharge nozzle 20 is scanned to dry a substrate by spinning is provided. A substrate W is held in a horizontal posture by a spin chuck 10 and rotated about a vertical axis by a rotation motor 14, and when an outlet of the nozzle 20 is scanned from a position opposed to a center of the substrate W to a position opposed to a circumferential edge while a cleaning solution being discharged, immediately after the nozzle 20 has started to move, only one dried core is produced in the vicinity of the center of the substrate W, and thus production of not less than two dried cores in the vicinity of the center of the substrate W is prevented. The dried region is spread all over the surface of the substrate W.
摘要翻译: 提供了当去除去离子水喷嘴20被扫描以通过纺丝干燥基板时能够消除显影破坏的发生的方法。 基板W由旋转卡盘10保持在水平姿态,并通过旋转马达14绕垂直轴旋转,并且当喷嘴20的出口从与基板W的中心相对的位置扫描到位置 在喷嘴20开始移动之后立即排出清洗液时,与圆周边缘相对,在基板W的中心附近仅产生一个干燥的芯,从而在基板W的中心生成不少于2个的干燥芯 防止了基板W的中心附近。 干燥的区域遍布衬底W的整个表面。
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公开(公告)号:US20090269936A1
公开(公告)日:2009-10-29
申请号:US12242296
申请日:2008-09-30
申请人: Osamu Tamada , Masakazu Sanada , Tadashi Miyagi
发明人: Osamu Tamada , Masakazu Sanada , Tadashi Miyagi
IPC分类号: H01L21/302 , B05B12/04
CPC分类号: H01L21/6715 , G03F7/16
摘要: A thermal processing unit of a thermal processor for anti-reflection films includes: a covering nozzle for covering a substrate from above supported by a thermal processing plate and discharging an adhesion enhancing agent to a periphery of a substrate supported by the thermal processing plate; and a vaporization processor for supplying an adhesion enhancing agent in the vapor phase to the covering nozzle. While a substrate placed over the thermal processing plate is being subjected to thermal process, a control part causes the covering nozzle to discharge an adhesion enhancing agent in the vapor phase onto a periphery of a substrate to realize adhesion enhancement process. Thus, the adhesion between a resist coating film and a substrate surface in the periphery of a substrate is enhanced. Further, parallel implementation of thermal process and adhesion enhancement process exerts no influence on throughput.
摘要翻译: 用于防反射膜的热处理器的热处理单元包括:覆盖喷嘴,用于从由热处理板支撑的上方覆盖基板,并将粘附增强剂排放到由热处理板支撑的基板的周边; 以及用于将气相中的粘附增强剂供给到覆盖喷嘴的蒸发处理器。 当放置在热处理板上的基板经受热处理时,控制部分使得覆盖喷嘴将气相中的粘附增强剂排出到基板的周边上,以实现粘附增强过程。 因此,增强了抗蚀剂涂膜与基板周边的基板表面之间的粘合性。 此外,热处理和附着增强过程的并行实施对生产量没有影响。
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公开(公告)号:US07105074B2
公开(公告)日:2006-09-12
申请号:US10202279
申请日:2002-07-22
申请人: Osamu Tamada , Tsuyoshi Mitsuhashi , Minobu Matsunaga , Katsushi Yoshioka , Kenji Sugimoto , Kaoru Aoki , Moritaka Yano , Satoshi Yamamoto , Masakazu Sanada , Takashi Nagao , Mitsumasa Kodama
发明人: Osamu Tamada , Tsuyoshi Mitsuhashi , Minobu Matsunaga , Katsushi Yoshioka , Kenji Sugimoto , Kaoru Aoki , Moritaka Yano , Satoshi Yamamoto , Masakazu Sanada , Takashi Nagao , Mitsumasa Kodama
CPC分类号: H01L21/6715 , H01L21/31133
摘要: A substrate treating apparatus is provided for eliminating wasteful consumption of a treating solution in a treating mode in which the treating solution is delivered in a strip form to a substrate from a treating solution delivery nozzle sweeping over the substrate. In a first aspect of the invention, collecting vessels are arranged around a developing cup surrounding a wafer supported by a wafer holder. The collecting vessels collect part of a developer delivered from a discharge opening of a developer delivery nozzle outwardly of a surface of the wafer. In a second aspect of the invention, collecting vessels are arranged below a developer delivery nozzle, with collecting openings of the collecting vessels opposed to a discharge opening or openings of the delivery nozzle. The collecting vessels are moved longitudinally of the discharge openings according to a position of the developer delivery nozzle relative to the wafer.
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公开(公告)号:US20090070946A1
公开(公告)日:2009-03-19
申请号:US12211549
申请日:2008-09-16
申请人: Osamu Tamada , Masakazu Sanada , Tadashi Miyagi , Shuichi Yasuda
发明人: Osamu Tamada , Masakazu Sanada , Tadashi Miyagi , Shuichi Yasuda
CPC分类号: B08B3/02 , B08B2203/0288 , H01L21/67051
摘要: A cleaning processing part including an edge cleaning processing unit for cleaning an edge of a substrate is provided in an indexer block. An indexer robot provided in the indexer block transports an unprocessed substrate taken out of a cassette to the cleaning processing part before transporting the unprocessed substrate to an anti-reflection film processing block serving as a processor. The cleaning processing part cleans an edge and a back surface of a substrate.
摘要翻译: 在分度块中设置有包括用于清洁基板的边缘的边缘清洁处理单元的清洁处理部。 设置在分度器块中的分度器机器人将将未处理的基板输送到用作处理器的防反射膜处理块之前,将从盒中取出的未处理基板输送到清洁处理部。 清洁处理部件清洁基板的边缘和背面。
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公开(公告)号:US20080022928A1
公开(公告)日:2008-01-31
申请号:US11828514
申请日:2007-07-26
申请人: Masakazu Sanada , Osamu Tamada
发明人: Masakazu Sanada , Osamu Tamada
CPC分类号: H01L21/67017 , B05D1/005 , B05D3/04
摘要: A coating device includes a box-shaped processing chamber. Slits are respectively provided on four side surfaces of the processing chamber. A box-shaped housing is provided so as to surround the processing chamber. A space is formed between the processing chamber and the housing. A fan filter unit for forming downflow in the space is provided on the top of the housing. Air supplied to the fan filter unit is cleaned by the fan filter unit, and is supplied to the space. The air supplied to the space is supplied to the processing chamber through each of the slits in the processing chamber. This causes a twister-shaped air current to be generated within the processing chamber.
摘要翻译: 涂覆装置包括盒形处理室。 狭缝分别设置在处理室的四个侧表面上。 设置为围绕处理室的箱形壳体。 在处理室和壳体之间形成空间。 用于在空间中形成下流的风扇过滤器单元设置在壳体的顶部。 供应到风扇过滤器单元的空气被风扇过滤器单元清洁,并被供应到空间。 供给到空间的空气通过处理室中的每个狭缝供给到处理室。 这导致在处理室内产生扭转形状的气流。
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公开(公告)号:US20070183051A1
公开(公告)日:2007-08-09
申请号:US11670042
申请日:2007-02-01
申请人: Osamu Tamada , Masakazu Sanada , Tomohiro Goto
发明人: Osamu Tamada , Masakazu Sanada , Tomohiro Goto
IPC分类号: G02B1/10
摘要: A substrate is first spin-coated with an antireflection film material is carried out to the substrate to form antireflection film on the substrate. Next, a mixed solvent of HMDS and xylene is supplied in a predetermined quantity to the upper surface of the antireflection film, and is spin-dried in this state. The mixed solvent effects surface modifying treatment to reduce a hydrogen bonding component of surface energy of the antireflection film. Subsequently, the substrate receives heat treatment. This completes formation of the antireflection film on the substrate. As a result, the antireflection film has increased adhesion energy in water with respect to resist film, without impairing essential characteristics of the antireflection film.
摘要翻译: 首先将涂覆有抗反射薄膜材料的基板进行到基板上,以在基板上形成抗反射膜。 接着,将HMDS和二甲苯的混合溶剂以规定量供给到防反射膜的上表面,并在该状态下进行旋转干燥。 混合溶剂进行表面改性处理以降低抗反射膜的表面能的氢键分量。 随后,基板接受热处理。 这就完成了在基片上的抗反射膜的形成。 结果,防反射膜相对于抗蚀剂膜具有增加的水中的粘合能,而不损害防反射膜的基本特性。
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公开(公告)号:US06692165B2
公开(公告)日:2004-02-17
申请号:US10090099
申请日:2002-02-28
IPC分类号: G03D500
CPC分类号: H01L21/67051 , G03F7/3021
摘要: A developer is supplied onto a substrate and thereafter a rinse discharge nozzle is moved toward an operating direction. The rinse discharge nozzle is so moved on the substrate as to continuously supply pure water onto the substrate from a slit discharge port of the rinse discharge nozzle while sucking and recovering the pure water from the surface of the substrate through a slit suction port, and a series of development is performed in a stationary state of the substrate.
摘要翻译: 将显影剂供应到基板上,然后将冲洗放电喷嘴朝向操作方向移动。 冲洗排出喷嘴在基板上移动,从而通过狭缝吸引口从基板的表面吸引回收纯水,从冲洗排出口的狭缝排出口向基板连续供给纯水, 一系列显影在基板的静止状态下进行。
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公开(公告)号:US08286576B2
公开(公告)日:2012-10-16
申请号:US12242296
申请日:2008-09-30
申请人: Osamu Tamada , Masakazu Sanada , Tadashi Miyagi
发明人: Osamu Tamada , Masakazu Sanada , Tadashi Miyagi
CPC分类号: H01L21/6715 , G03F7/16
摘要: A thermal processing unit of a thermal processor for anti-reflection films includes: a covering nozzle for covering a substrate from above supported by a thermal processing plate and discharging an adhesion enhancing agent to a periphery of a substrate supported by the thermal processing plate; and a vaporization processor for supplying an adhesion enhancing agent in the vapor phase to the covering nozzle. While a substrate placed over the thermal processing plate is being subjected to thermal process, a control part causes the covering nozzle to discharge an adhesion enhancing agent in the vapor phase onto a periphery of a substrate to realize adhesion enhancement process. Thus, the adhesion between a resist coating film and a substrate surface in the periphery of a substrate is enhanced. Further, parallel implementation of thermal process and adhesion enhancement process exerts no influence on throughput.
摘要翻译: 用于防反射膜的热处理器的热处理单元包括:覆盖喷嘴,用于从由热处理板支撑的上方覆盖基板,并将粘附增强剂排放到由热处理板支撑的基板的周边; 以及用于将气相中的粘附增强剂供给到覆盖喷嘴的蒸发处理器。 当放置在热处理板上的基板经受热处理时,控制部分使得覆盖喷嘴将气相中的粘附增强剂排出到基板的周边上,以实现粘附增强过程。 因此,增强了抗蚀剂涂膜与基板周边的基板表面之间的粘合性。 此外,热处理和附着增强过程的并行实施对生产量没有影响。
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