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    Semiconductor light emitting device with current confining layer
    2.
    发明授权
    Semiconductor light emitting device with current confining layer 失效
    具有电流限制层的半导体发光器件

    公开(公告)号：US5404031A

    公开(公告)日：1995-04-04

    申请号：US270115

    申请日：1994-07-01

    申请人： Kazuaki Sasaki ,  Hiroshi Nakatsu ,  Osamu Yamamoto ,  Masanori Watanabe ,  Saburo Yamamoto

    发明人： Kazuaki Sasaki ,  Hiroshi Nakatsu ,  Osamu Yamamoto ,  Masanori Watanabe ,  Saburo Yamamoto

    IPC分类号： H01L33/00 ,  H01L33/10 ,  H01L33/14 ,  H01L33/24 ,  H01L33/28 ,  H01L33/30 ,  H01L33/38

    CPC分类号： H01L33/38 ,  H01L33/0062 ,  H01L33/10 ,  H01L33/145 ,  H01L33/24 ,  H01L33/405

    摘要： A semiconductor light emitting device which allows part of an active layer to generate light by supplying current to the part of the active layer is disclosed. The semiconductor light emitting device includes: a semiconductor substrate having upper and lower surfaces, the upper surface having a stepped portion, the stepped portion dividing the upper surface into at least a first area and a second area; a current confining layer, formed on the upper surface of the substrate, the current confining layer being discontinuous at the stepped portion, the current flowing through an area between the first area and the second area of the substrate; a multilayer structure formed on the current confining layer, the multilayer structure including the active layer; a first electrode which covers only part of an upper surface of the multilayer structure; and a second electrode formed over the lower surface of the substrate. In the semiconductor light emitting device, the light generated from part of the active layer is extracted to the outside through a portion of the upper surface of the multilayer structure which is not covered with the first electrode.

    摘要翻译： 公开了一种半导体发光器件，其通过向有源层的一部分提供电流来允许有源层的一部分产生光。 半导体发光器件包括：具有上表面和下表面的半导体衬底，上表面具有阶梯部分，阶梯部分将上表面分成至少第一区域和第二区域; 形成在所述基板的上表面上的电流限制层，所述电流限制层在所述阶梯部分处是不连续的，所述电流流过所述第一区域和所述基板的所述第二区域之间的区域; 形成在电流限制层上的多层结构，所述多层结构包括有源层; 仅覆盖所述多层结构的上表面的一部分的第一电极; 以及形成在所述基板的下表面上的第二电极。 在半导体发光器件中，从有源层的一部分产生的光通过未被第一电极覆盖的多层结构的上表面的一部分提取到外部。

    Light-emitting diode having a surface electrode of a tree-like form
    3.
    发明授权
    Light-emitting diode having a surface electrode of a tree-like form 失效
    具有树状形状的表面电极的发光二极管

    公开(公告)号：US5309001A

    公开(公告)日：1994-05-03

    申请号：US980666

    申请日：1992-11-24

    申请人： Masanori Watanabe ,  Mitsuhiro Matsumoto ,  Hiroshi Nakatsu ,  Tadashi Takeoka ,  Osamu Yamamoto ,  Kazuaki Sasaki

    发明人： Masanori Watanabe ,  Mitsuhiro Matsumoto ,  Hiroshi Nakatsu ,  Tadashi Takeoka ,  Osamu Yamamoto ,  Kazuaki Sasaki

    IPC分类号： H01L33/38 ,  H01L33/00

    CPC分类号： H01L33/385 ,  H01L33/38 ,  H01L33/20 ,  H01L33/24

    摘要： A surface electrode on a surface of a LED has a pad, and further, at least first-order branches linearly extending from the pad, second-order branches diverged and linearly extending from the first-order branches, and third-order branches diverged and linearly extending from the second-order branches. The pad out of the surface electrode is not in electrical contact with a underlying semiconductor layer, whereas the surface electrode and the semiconductor layer are in electrical contact with each other at ends of the highest-order branches. Also, the semiconductor layer is provided along a pattern of the surface electrode in a mesa shape. Thus, ineffective light emission underneath the surface electrode is relatively reduced so that external quantum efficiency can be improved, and moreover even shorter-wavelength light can be allowed to go out at high efficiency by omitting a current diffusion layer.

    摘要翻译： LED的表面上的表面电极具有焊盘，并且至少一级从焊盘线性延伸的分支，二阶分支从一级分支发散并线性延伸，三阶分支发散， 从二阶分支线性延伸。 表面电极中的焊盘不与下面的半导体层电接触，而表面电极和半导体层在最高级分支的端部彼此电接触。 而且，半导体层沿着台面形状的表面电极的图案设置。 因此，表面电极下方的无效光发射相对减少，从而可以提高外部量子效率，而且通过省略电流扩散层，甚至可以通过高效率地允许更短波长的光线出射。

    Method for producing a semiconductor laser device
    4.
    发明授权
    Method for producing a semiconductor laser device 失效
    半导体激光装置的制造方法

    公开(公告)号：US5413956A

    公开(公告)日：1995-05-09

    申请号：US995064

    申请日：1992-12-22

    申请人： Masanori Watanabe ,  Ken Ohbayashi ,  Kazuaki Sasaki ,  Osamu Yamamoto ,  Mitsuhiro Matsumoto

    发明人： Masanori Watanabe ,  Ken Ohbayashi ,  Kazuaki Sasaki ,  Osamu Yamamoto ,  Mitsuhiro Matsumoto

    IPC分类号： H01S5/02 ,  H01S5/028 ,  H01S5/042 ,  H01S5/16 ,  H01L21/20

    CPC分类号： H01S5/0425 ,  H01S5/164 ,  H01S5/0201 ,  H01S5/0281 ,  Y10S148/026 ,  Y10S148/095 ,  Y10S148/104 ,  Y10S148/106 ,  Y10S148/143 ,  Y10S438/945

    摘要： A method for producing a semiconductor laser device includes the steps of: forming window layers on either one of a top surface of an internal structure or a reverse surface of a substrate and on light-emitting end facets of the internal structure; forming a reflection film on the light-emitting end facets; removing the window layer formed on either one of the top surface or the reverse surface by using an etchant which hardly etches the reflection film; and forming electrodes on the surface from which the window layer is removed by etching and on the other surface. Another method for producing a semiconductor laser device includes the steps of: forming window layers on light-emitting end facets of the bars; inserting the bars into an apparatus having openings for forming electrodes and a supporting portion for preventing a positional shift between the bars and the openings, and forming the electrodes on the top surfaces and the reverse surfaces of the bars; and cutting the bars into the chips.

    摘要翻译： 一种制造半导体激光器件的方法包括以下步骤：在内部结构的顶表面或衬底的反面中的任一个上以及在内部结构的发光端面上形成窗口层; 在发光端面上形成反射膜; 通过使用几乎不蚀刻反射膜的蚀刻剂去除形成在顶表面或反面中的任一个上的窗口层; 以及在通过蚀刻除去窗口层的表面上和在另一个表面上形成电极。 制造半导体激光器件的另一种方法包括以下步骤：在棒的发光端面形成窗口层; 将棒插入具有用于形成电极的开口的装置和用于防止棒和开口之间的位置偏移的支撑部分，以及在棒的顶表面和反面上形成电极; 并将条切成芯片。

    Laser beam oscillating apparatus
    7.
    发明授权
    Laser beam oscillating apparatus 失效
    激光束振荡装置

    公开(公告)号：US5144636A

    公开(公告)日：1992-09-01

    申请号：US647022

    申请日：1991-01-29

    申请人： Toshihiko Yoshida ,  Masanori Watanabe ,  Osamu Yamamoto

    发明人： Toshihiko Yoshida ,  Masanori Watanabe ,  Osamu Yamamoto

    IPC分类号： G02B6/34 ,  G02B6/42 ,  G02F1/37 ,  H01S5/00 ,  H01S5/40

    CPC分类号： G02B6/425 ,  G02B6/34 ,  H01S5/4025

    摘要： A laser beam oscillating apparatus which includes a plurality of semiconductor laser beam oscillators (21, 22, 23) oscillating laser beams of a different wavelength from each other, an optical waveguide (12) formed on a substrate (11) so that the oscillated laser beams propagate therein and are then emitted in the same direction from the output end thereof and an optical coupler (13) to introduce the laser beams into the optical waveguide, thus allowing simultaneous introduction of these semiconductor laser beams of different wavelengths into the optical waveguide and simultaneous output of them in the same direction from the output end thereof.

    Battery system and automobile
    10.
    发明授权
    Battery system and automobile 有权
    电池系统和汽车

    公开(公告)号：US08643341B2

    公开(公告)日：2014-02-04

    申请号：US13207495

    申请日：2011-08-11

    申请人： Hiroshi Hamaguchi ,  Masanori Watanabe

    发明人： Hiroshi Hamaguchi ,  Masanori Watanabe

    IPC分类号： H02J7/04

    CPC分类号： H01M10/052 ,  B60L3/0007 ,  B60L3/0046 ,  B60L11/187 ,  H01M10/486 ,  H01M10/613 ,  H01M10/615 ,  H01M10/625 ,  H01M10/633 ,  H01M10/6563 ,  H01M10/6571 ,  Y02E60/122 ,  Y02T10/7011 ,  Y02T10/705

    摘要： Disclosed is a battery system wherein safety of a lithium secondary battery can be enhanced by efficiently deactivating (inactivating) lithium metal deposited on a negative electrode of the lithium secondary battery. Also disclosed is an automobile. Specifically disclosed is a battery system comprising a lithium ion secondary battery and a temperature control unit for controlling the temperature of the lithium ion secondary battery. The temperature control unit performs such a control that the temperature T of the lithium ion secondary battery is maintained within the following range: 55° C.

    摘要翻译： 公开了一种电池系统，其中可以通过有效地使沉积在锂二次电池的负极上的锂金属失活（失活）来提高锂二次电池的安全性。 还公开了一种汽车。 具体公开了包括锂离子二次电池和用于控制锂离子二次电池的温度的温度控制单元的电池系统。 温度控制单元进行这样的控制，使得锂离子二次电池的温度T保持在以下范围内：55℃