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公开(公告)号：US5228047A
公开(公告)日：1993-07-13
申请号：US762769
申请日：1991-09-20
申请人： Mitsuhiro Matsumoto , Kazuaki Sasaki , Masaki Kondo , Tadashi Takeoka , Hiroshi Nakatsu , Masanori Watanabe , Osamu Yamamoto , Saburo Yamamoto
发明人： Mitsuhiro Matsumoto , Kazuaki Sasaki , Masaki Kondo , Tadashi Takeoka , Hiroshi Nakatsu , Masanori Watanabe , Osamu Yamamoto , Saburo Yamamoto
IPC分类号： H01L33/00 , H01S5/02 , H01S5/028 , H01S5/10 , H01S5/16 , H01S5/20 , H01S5/22 , H01S5/32 , H01S5/323
CPC分类号： H01S5/164 , H01L33/0062 , H01S2301/18 , H01S5/0201 , H01S5/0202 , H01S5/028 , H01S5/0281 , H01S5/0282 , H01S5/1064 , H01S5/204 , H01S5/2211 , H01S5/222 , H01S5/3201 , H01S5/32316 , H01S5/32325
摘要： A semiconductor laser device is provided which is constituted by semiconductor materials so as to emit laser light from a cavity end facet, the laser light being excited in a waveguide within an active layer sandwiched between a pair of cladding layers, wherein a window layer made of a semiconductor material having a band gap greater than that of the active layer is formed on the cavity end facet from which the laser light is emitted, so as to have a thickness sufficient to prevent local generation of crystal defects by lattice mismatching between the semiconductor material of the window layer and the semiconductor materials at the cavity end facet. There is also provided a method for producing such a semiconductor laser device with high efficiency.
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公开(公告)号：US5404031A
公开(公告)日：1995-04-04
申请号：US270115
申请日：1994-07-01
CPC分类号： H01L33/38 , H01L33/0062 , H01L33/10 , H01L33/145 , H01L33/24 , H01L33/405
摘要： A semiconductor light emitting device which allows part of an active layer to generate light by supplying current to the part of the active layer is disclosed. The semiconductor light emitting device includes: a semiconductor substrate having upper and lower surfaces, the upper surface having a stepped portion, the stepped portion dividing the upper surface into at least a first area and a second area; a current confining layer, formed on the upper surface of the substrate, the current confining layer being discontinuous at the stepped portion, the current flowing through an area between the first area and the second area of the substrate; a multilayer structure formed on the current confining layer, the multilayer structure including the active layer; a first electrode which covers only part of an upper surface of the multilayer structure; and a second electrode formed over the lower surface of the substrate. In the semiconductor light emitting device, the light generated from part of the active layer is extracted to the outside through a portion of the upper surface of the multilayer structure which is not covered with the first electrode.
摘要翻译： 公开了一种半导体发光器件，其通过向有源层的一部分提供电流来允许有源层的一部分产生光。 半导体发光器件包括：具有上表面和下表面的半导体衬底，上表面具有阶梯部分，阶梯部分将上表面分成至少第一区域和第二区域; 形成在所述基板的上表面上的电流限制层，所述电流限制层在所述阶梯部分处是不连续的，所述电流流过所述第一区域和所述基板的所述第二区域之间的区域; 形成在电流限制层上的多层结构，所述多层结构包括有源层; 仅覆盖所述多层结构的上表面的一部分的第一电极; 以及形成在所述基板的下表面上的第二电极。 在半导体发光器件中，从有源层的一部分产生的光通过未被第一电极覆盖的多层结构的上表面的一部分提取到外部。
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公开(公告)号：US5309001A
公开(公告)日：1994-05-03
申请号：US980666
申请日：1992-11-24
申请人： Masanori Watanabe , Mitsuhiro Matsumoto , Hiroshi Nakatsu , Tadashi Takeoka , Osamu Yamamoto , Kazuaki Sasaki
发明人： Masanori Watanabe , Mitsuhiro Matsumoto , Hiroshi Nakatsu , Tadashi Takeoka , Osamu Yamamoto , Kazuaki Sasaki
CPC分类号： H01L33/385 , H01L33/38 , H01L33/20 , H01L33/24
摘要： A surface electrode on a surface of a LED has a pad, and further, at least first-order branches linearly extending from the pad, second-order branches diverged and linearly extending from the first-order branches, and third-order branches diverged and linearly extending from the second-order branches. The pad out of the surface electrode is not in electrical contact with a underlying semiconductor layer, whereas the surface electrode and the semiconductor layer are in electrical contact with each other at ends of the highest-order branches. Also, the semiconductor layer is provided along a pattern of the surface electrode in a mesa shape. Thus, ineffective light emission underneath the surface electrode is relatively reduced so that external quantum efficiency can be improved, and moreover even shorter-wavelength light can be allowed to go out at high efficiency by omitting a current diffusion layer.
摘要翻译： LED的表面上的表面电极具有焊盘，并且至少一级从焊盘线性延伸的分支，二阶分支从一级分支发散并线性延伸，三阶分支发散， 从二阶分支线性延伸。 表面电极中的焊盘不与下面的半导体层电接触，而表面电极和半导体层在最高级分支的端部彼此电接触。 而且，半导体层沿着台面形状的表面电极的图案设置。 因此，表面电极下方的无效光发射相对减少，从而可以提高外部量子效率，而且通过省略电流扩散层，甚至可以通过高效率地允许更短波长的光线出射。
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公开(公告)号：US5413956A
公开(公告)日：1995-05-09
申请号：US995064
申请日：1992-12-22
CPC分类号： H01S5/0425 , H01S5/164 , H01S5/0201 , H01S5/0281 , Y10S148/026 , Y10S148/095 , Y10S148/104 , Y10S148/106 , Y10S148/143 , Y10S438/945
摘要： A method for producing a semiconductor laser device includes the steps of: forming window layers on either one of a top surface of an internal structure or a reverse surface of a substrate and on light-emitting end facets of the internal structure; forming a reflection film on the light-emitting end facets; removing the window layer formed on either one of the top surface or the reverse surface by using an etchant which hardly etches the reflection film; and forming electrodes on the surface from which the window layer is removed by etching and on the other surface. Another method for producing a semiconductor laser device includes the steps of: forming window layers on light-emitting end facets of the bars; inserting the bars into an apparatus having openings for forming electrodes and a supporting portion for preventing a positional shift between the bars and the openings, and forming the electrodes on the top surfaces and the reverse surfaces of the bars; and cutting the bars into the chips.
摘要翻译： 一种制造半导体激光器件的方法包括以下步骤：在内部结构的顶表面或衬底的反面中的任一个上以及在内部结构的发光端面上形成窗口层; 在发光端面上形成反射膜; 通过使用几乎不蚀刻反射膜的蚀刻剂去除形成在顶表面或反面中的任一个上的窗口层; 以及在通过蚀刻除去窗口层的表面上和在另一个表面上形成电极。 制造半导体激光器件的另一种方法包括以下步骤：在棒的发光端面形成窗口层; 将棒插入具有用于形成电极的开口的装置和用于防止棒和开口之间的位置偏移的支撑部分，以及在棒的顶表面和反面上形成电极; 并将条切成芯片。
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公开(公告)号：US06984850B2
公开(公告)日：2006-01-10
申请号：US10702642
申请日：2003-11-07
申请人： Hiroshi Nakatsu , Osamu Yamamoto
发明人： Hiroshi Nakatsu , Osamu Yamamoto
摘要： A light-emitting diode includes: a semiconductor substrate; and a layered structure, made of an AlGaInP type compound semiconductor material and provided on the semiconductor substrate. The layered structure includes: a light-emitting structure composed of a pair of cladding layers and an active layer for emitting light provided between the pair of cladding layers; and a current diffusion layer which is lattice-mismatched with the light-emitting structure. A lattice mismatch Δ a/a of the current diffusion layer with respect to the light-emitting structure defined by the following expression is −1% or smaller: Δa/a=(ad−ae)/ae where ad is a lattice constant of the current diffusion layer, and ae is a lattice constant of the light-emitting structure.
摘要翻译： 发光二极管包括：半导体衬底; 以及由AlGaInP型化合物半导体材料制成并设置在半导体基板上的分层结构。 层状结构包括：由一对包覆层和用于发射设置在该对包覆层之间的光的有源层构成的发光结构; 以及与发光结构晶格失配的电流扩散层。 电流扩散层相对于由下式表示的发光结构的晶格失配Δa/ a为-1％以下：<？in-line-formula description =“In-line Formulas”end =“ 导数“？> Deltaa / a =（a -a / a <？in-line-formula description =”In 线公式“end =”tail“？>其中a是电流扩散层的晶格常数，并且λe是发光的晶格常数 结构体。
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公开(公告)号：US06936858B1
公开(公告)日：2005-08-30
申请号：US09373544
申请日：1999-08-13
申请人： Hiroshi Nakatsu , Osamu Yamamoto
发明人： Hiroshi Nakatsu , Osamu Yamamoto
摘要： A light-emitting diode includes: a semiconductor substrate; and a layered structure, made of an AlGaInP type compound semiconductor material and provided on the semiconductor substrate. The layered structure includes: a light-emitting structure composed of a pair of cladding layers and an active layer for emitting light provided between the pair of cladding layers; and a current diffusion layer which is lattice-mismatched with the light-emitting structure. A lattice mismatch Δa/a of the current diffusion layer with respect to the light-emitting structure defined by the following expression is −1% or smaller: Δa/a=(ad−ae)/ae where ad is a lattice constant of the current diffusion layer, and ae is a lattice constant of the light-emitting structure.
摘要翻译： 发光二极管包括：半导体衬底; 以及由AlGaInP型化合物半导体材料制成并设置在半导体基板上的分层结构。 层状结构包括：由一对包覆层和用于发射设置在该对包覆层之间的光的有源层构成的发光结构; 以及与发光结构晶格失配的电流扩散层。 相对于由下式表示的发光结构的电流扩散层的晶格失配Deltaa / a为-1％以下：<？in-line-formula description =“In-line Formulas”end =“lead “？”>Δa/ a =（a-d e e e））<<<<---------“ 线公式“end =”tail“？>其中a是电流扩散层的晶格常数，并且λ是发光结构的晶格常数 。
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7.发明申请Semiconductor light-emitting element, manufacturing method therefor and semiconductor device 审中-公开半导体发光元件及其制造方法和半导体器件公开(公告)号：US20050116309A1
公开(公告)日：2005-06-02
申请号：US10971688
申请日：2004-10-25
IPC分类号： H01L21/00 , H01L27/14 , H01L27/15 , H01L33/06 , H01L33/14 , H01L33/20 , H01L33/30 , H01L33/42 , H01L33/62
CPC分类号： H01L33/20 , H01L33/0079
摘要： A semiconductor light-emitting element has a semiconductor laminate including an active layer emitting light of a prescribed emission wavelength and a step located at an in-depth position beyond the active layer. The element also has a substrate transparent to the emission wavelength, a first electrode provided on a surface of the semiconductor laminate, and a second electrode provided on the step. The substrate transparent to the emission wavelength improves the external emission efficiency. The locations of the first and second electrodes substantially prevent current to flow through a direct connection interface between the semiconductor laminate and the substrate. Thereby, the element exhibits satisfactory electrical characteristics even when an incomplete junction attributed to hillock or the like is generated in the direct connection interface.
摘要翻译： 半导体发光元件具有包括发射规定发射波长的光的有源层和位于有源层之外的深度位置的台阶的半导体层叠体。 元件还具有对发射波长透明的基板，设置在半导体层叠体的表面上的第一电极和设置在该台阶上的第二电极。 对发射波长透明的衬底提高了外部发射效率。 第一电极和第二电极的位置基本上防止电流流过半导体层压体和衬底之间的直接连接界面。 因此，即使在直接连接界面中产生归因于小丘等的不完全连接，该元件也表现出令人满意的电特性。
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公开(公告)号：US4945525A
公开(公告)日：1990-07-31
申请号：US239753
申请日：1988-09-02
CPC分类号： G11B7/1384 , G11B7/124
摘要： An optical information processing apparatus including a substrate of a transparent material, first and second optical waveguides formed on opposite faces of said transparent substrate, a light introducing device for introducing reflected light from an information writing medium into the first and second optical waveguides, and a detecting device for detecting reproduction signal, tracking error signal and focusing error signal based on the reflected light introduced into the first and second optical waveguides.
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公开(公告)号：US4720834A
公开(公告)日：1988-01-19
申请号：US807867
申请日：1985-12-11
CPC分类号： H01S3/082 , H01S5/10 , H01S5/1021 , H01S5/22
摘要： An internal-reflection-interference semiconductor laser device comprising a first laser operation area ranging from one facet to the internal reflecting section and a second laser operation area ranging from the other facet to the internal reflecting section, wherein when the internal-cavity length l.sub.1 of the first laser operation area is shorter than the internal-cavity length l.sub.2 of the second laser operation area, the reflectivity R.sub.1 at the facet on the side of the first laser operation area is smaller than the reflectivity R.sub.2 at the facet on the side of the second laser operation area.
摘要翻译： 一种内反射干涉半导体激光器件，包括从一个面到内部反射部的范围的第一激光操作区域和从另一个面到内部反射部的范围的第二激光操作区域，其中当内部反射干涉半导体激光器的内腔长度l1 第一激光操作区域比第二激光器操作区域的内腔长度l2短，第一激光操作区域侧面上的反射率R1小于第一激光器操作区域侧面上的反射率R2 第二激光操作区域。
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公开(公告)号：US5450237A
公开(公告)日：1995-09-12
申请号：US300070
申请日：1994-09-02
申请人： Toshihiko Yoshida , Osamu Yamamoto , Saburo Yamamoto , Shohichi Kato , Masumi Nakamichi , Toshimasa Hamada , Sadayoshi Matsui
发明人： Toshihiko Yoshida , Osamu Yamamoto , Saburo Yamamoto , Shohichi Kato , Masumi Nakamichi , Toshimasa Hamada , Sadayoshi Matsui
CPC分类号： G11B7/1374 , G02B27/58 , G11B7/123 , G11B7/1381
摘要： A hyper-resolution optical device which can focus a beam of light to a diameter less than the diffraction limit. The optical device has an optical system disposed on a transmissive substrate. One component in the optical system is a hyper-resolution optical component which passes or reflects light and which has a central portion which does not pass or reflect light, respectively. The hyper-resolution optical component can be integrated with the transmissive substrate. Such optical devices are particularly suitable for optical pick-up devices, laser printers, sensors.
摘要翻译： 可以将光束聚焦到小于衍射极限的直径的超分辨率光学装置。 光学装置具有设置在透射基板上的光学系统。 光学系统中的一个部件是通过或反射光的超分辨率光学部件，并且具有不分别通过或反射光的中心部分。 超分辨率光学部件可以与透射基板一体化。 这种光学装置特别适用于光学拾取装置，激光打印机，传感器。
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