公开(公告)号：US06334938B2

公开(公告)日：2002-01-01

申请号：US09729102

申请日：2000-12-05

申请人： Otojiro Kida ,  Akira Mitsui ,  Eri Suzuki ,  Hisashi Osaki ,  Atsushi Hayashi ,  Takuji Oyama ,  Kenichi Sasaki

发明人： Otojiro Kida ,  Akira Mitsui ,  Eri Suzuki ,  Hisashi Osaki ,  Atsushi Hayashi ,  Takuji Oyama ,  Kenichi Sasaki

IPC分类号： C23C1434

CPC分类号： C23C14/083 ,  C23C4/02 ,  C23C4/11 ,  C23C14/3414

摘要： A sputtering target comprising a substrate and a target material formed on the substrate, wherein the target material comprises a metal oxide of the chemical formula MOx as the main component, wherein MOx is a metal oxide which is deficient in oxygen as compared with the stoichiometric composition, and M is at least one metal selected from the group consisting of Ti, Nb, Ta, Mo, W, Zr and Hf, a process for its production, and a method for forming a film having a high refractive index.

公开(公告)号：US5354446A

公开(公告)日：1994-10-11

申请号：US936281

申请日：1992-08-28

申请人： Otojiro Kida ,  Akira Mitsui ,  Atsushi Hayashi

发明人： Otojiro Kida ,  Akira Mitsui ,  Atsushi Hayashi

IPC分类号： C03C17/245 ,  C03C17/34 ,  C23C14/08 ,  C23C14/34 ,  G02B1/10 ,  G02F1/1333 ,  G02F1/1335 ,  H01J37/34

CPC分类号： H01J37/3435 ,  C03C17/245 ,  C03C17/3417 ,  C23C14/08 ,  C23C14/3407 ,  C23C14/3414 ,  G02B1/105 ,  H01J37/3426 ,  H01J37/3491 ,  C03C2217/213 ,  C03C2217/23 ,  C03C2217/242 ,  C03C2218/154 ,  G02F1/133502 ,  G02F2001/133337 ,  Y02T10/88

摘要： A ceramics rotatable magnetron sputtering cathode target comprising a cylindrical target holder and a ceramics layer as a target to be sputtered, formed on the outer surface of the target holder, wherein at least one layer selected from the group consisting of a layer of a metal or alloy having a thermal expansion coefficient of an intermediate level between the thermal expansion coefficients of the ceramics layer and the target holder, and a layer of a metal or alloy having a thermal expansion coefficient approximating to the thermal expansion coefficient of the ceramics layer, is formed as an undercoat between the ceramics layer and the target holder.

摘要翻译： 一种陶瓷可旋转磁控溅射阴极靶，其包括圆柱形靶保持器和作为溅射靶的陶瓷层，形成在靶保持器的外表面上，其中至少一层选自金属层或 形成具有陶瓷层和靶保持体的热膨胀系数之间的中间水平的热膨胀系数的合金，以及具有接近于陶瓷层的热膨胀系数的热膨胀系数的金属或合金层 作为陶瓷层和靶保持体之间的底涂层。

公开(公告)号：US06193856B1

公开(公告)日：2001-02-27

申请号：US09011749

申请日：1998-03-12

申请人： Otojiro Kida ,  Akira Mitsui ,  Eri Suzuki ,  Hisashi Osaki ,  Atsushi Hayashi

发明人： Otojiro Kida ,  Akira Mitsui ,  Eri Suzuki ,  Hisashi Osaki ,  Atsushi Hayashi

IPC分类号： C23C1434

CPC分类号： C23C14/083 ,  C23C4/02 ,  C23C4/11 ,  C23C14/3414

摘要： A sputtering target comprising a substrate and a target material formed on the substrate, wherein the target material comprises a metal oxide of the chemical formula MOx as the main component, wherein MOx is a metal oxide which is deficient in oxygen as compared with the stoichiometric composition, and M is at least one metal selected from the group consisting of Ti, Nb, Ta, Mo, W, Zr and Hf, a process for its production, and a method for forming a film having a high refractive index.

摘要翻译： 1.一种溅射靶，包括在所述基板上形成的基板和靶材，其中所述靶材包含化学式MO x的金属氧化物为主要成分，其中MOx为与所述化学计量组成相比缺氧的金属氧化物 M是选自Ti，Nb，Ta，Mo，W，Zr和Hf中的至少一种金属，其制造方法以及具有高折射率的膜的形成方法。

公开(公告)号：US06440278B1

公开(公告)日：2002-08-27

申请号：US09964625

申请日：2001-09-28

申请人： Otojiro Kida ,  Akira Mitsui ,  Eri Suzuki ,  Hisashi Osaki ,  Atsushi Hayashi

发明人： Otojiro Kida ,  Akira Mitsui ,  Eri Suzuki ,  Hisashi Osaki ,  Atsushi Hayashi

IPC分类号： C23C1434

CPC分类号： C23C14/083 ,  C23C4/02 ,  C23C4/11 ,  C23C14/3414

摘要： A sputtering target comprising a substrate and a target material formed on the substrate, wherein the target material comprises a metal oxide of the chemical formula MOx as the main component, wherein MOx is a metal oxide which is deficient in oxygen as compared with the stoichiometric composition, and M is at least one metal selected from the group consisting of Ti, Nb, Ta, Mo, W, Zr and Hf, a process for its production, and a method for forming a film having a high refractive index.

摘要翻译： 1.一种溅射靶，包括在所述基板上形成的基板和靶材，其中所述靶材包含化学式MO x的金属氧化物为主要成分，其中MOx为与所述化学计量组成相比缺氧的金属氧化物 M是选自Ti，Nb，Ta，Mo，W，Zr和Hf中的至少一种金属，其制造方法以及具有高折射率的膜的形成方法。

公开(公告)号：US06743343B2

公开(公告)日：2004-06-01

申请号：US10191321

申请日：2002-07-10

申请人： Otojiro Kida ,  Akira Mitsui ,  Eri Suzuki ,  Hisashi Osaki ,  Atsushi Hayashi

发明人： Otojiro Kida ,  Akira Mitsui ,  Eri Suzuki ,  Hisashi Osaki ,  Atsushi Hayashi

IPC分类号： C23C1434

CPC分类号： C23C14/083 ,  C23C4/02 ,  C23C4/11 ,  C23C14/3414

摘要： A sputtering target comprising a substrate and a target material formed on the substrate, wherein the target material comprises a metal oxide of the chemical formula MOx as the main component, wherein MOx is a metal oxide which is deficient in oxygen as compared with the stoichiometric composition, and M is at least one metal selected from the group consisting of Ti, Nb, Ta, Mo, W, Zr and Hf, a process for its production, and a method for forming a film having a high refractive index.

摘要翻译： 1.一种溅射靶，包括在所述基板上形成的基板和靶材，其中所述靶材包含化学式MO x的金属氧化物为主要成分，其中MOx为与所述化学计量组成相比缺氧的金属氧化物 M是选自Ti，Nb，Ta，Mo，W，Zr和Hf中的至少一种金属，其制造方法以及具有高折射率的膜的形成方法。

公开(公告)号：US6146765A

公开(公告)日：2000-11-14

申请号：US912361

申请日：1997-08-18

申请人： Akira Mitsui ,  Kazuo Sato ,  Masami Miyazaki ,  Junichi Ebisawa ,  Yasuo Hayashi ,  Masao Higeta ,  Katsuaki Aikawa ,  Atsushi Hayashi

发明人： Akira Mitsui ,  Kazuo Sato ,  Masami Miyazaki ,  Junichi Ebisawa ,  Yasuo Hayashi ,  Masao Higeta ,  Katsuaki Aikawa ,  Atsushi Hayashi

IPC分类号： C23C14/06 ,  C23C14/08 ,  C23C14/34 ,  B32B15/04 ,  B32B17/06

CPC分类号： C23C14/08 ,  C23C14/0641 ,  C23C14/0676 ,  C23C14/086 ,  C23C14/3414 ,  Y10S428/91

摘要： A transparent conductive film of a zinc oxide type containing gallium and silicon, which contains silicon in an amount of from 0.01 to 1.5 mol % in terms of SiO.sub.2.

摘要翻译： 含有硅和硅的氧化锌类的透明导电膜，其含有SiO 2换算为0.01〜1.5摩尔％的硅。

公开(公告)号：US06639318B1

公开(公告)日：2003-10-28

申请号：US09647917

申请日：2000-10-13

申请人： Akira Mitsui ,  Atsushi Hayashi ,  Kiyoshi Matsumoto ,  Hiromichi Nishimura ,  Yasuhiro Sanada ,  Makoto Noshiro ,  Kazuo Sunahara

发明人： Akira Mitsui ,  Atsushi Hayashi ,  Kiyoshi Matsumoto ,  Hiromichi Nishimura ,  Yasuhiro Sanada ,  Makoto Noshiro ,  Kazuo Sunahara

IPC分类号： H01L2940

CPC分类号： H01L21/76843 ,  H01L23/53228 ,  H01L23/53238 ,  H01L2924/0002 ,  H01L2924/00

摘要： The present invention has an object to provide an integrated circuit device having a Cu wiring, using a barrier layer which facilitates planarization. The present invention relates to an integrated circuit device having a Cu wiring layer, a barrier layer therefor and a dielectric layer, wherein the barrier layer is represented by a compositional formula of TaOxNy (the range of x being 0

摘要翻译： 本发明的目的是提供一种使用有助于平坦化的阻挡层的具有Cu布线的集成电路器件。 本发明涉及一种具有Cu布线层及其阻挡层和介电层的集成电路器件，其中阻挡层由组成式TaOxNy（x的范围为0

公开(公告)号：US5736267A

公开(公告)日：1998-04-07

申请号：US515805

申请日：1995-08-16

申请人： Akira Mitsui ,  Kazuo Sato ,  Masami Miyazaki ,  Junichi Ebisawa ,  Yasuo Hayashi ,  Masao Higeta ,  Katsuaki Aikawa ,  Atsushi Hayashi

发明人： Akira Mitsui ,  Kazuo Sato ,  Masami Miyazaki ,  Junichi Ebisawa ,  Yasuo Hayashi ,  Masao Higeta ,  Katsuaki Aikawa ,  Atsushi Hayashi

IPC分类号： C23C14/06 ,  C23C14/08 ,  C23C14/34 ,  B32B9/00

CPC分类号： C23C14/08 ,  C23C14/0641 ,  C23C14/0676 ,  C23C14/086 ,  C23C14/3414 ,  Y10S428/91 ,  Y10T428/31667

摘要： A transparent conductive film of a zinc oxide type containing gallium and silicon, which contains silicon in an amount of from 0.01 to 1.5 mol % in terms of SiO.sub.2.

公开(公告)号：US08774283B2

公开(公告)日：2014-07-08

申请号：US12442746

申请日：2008-03-31

申请人： Sei Sunahara ,  Atsushi Hayashi

发明人： Sei Sunahara ,  Atsushi Hayashi

IPC分类号： H04N11/02

CPC分类号： H04N19/188 ,  H04N19/46 ,  H04N19/64 ,  H04N19/70 ,  H04N19/895 ,  H04N21/2381 ,  H04N21/4381 ,  H04N21/6437

摘要： An information processing apparatus and method for reducing an unnecessary waiting time in a depacketizing process and enabling processing to be easily performed at high speeds applicable to, for example, an encoding apparatus. An analysis unit compares input image data with image data of one previous picture read out from a storage unit. On the basis of the analysis result, a concealment header generation unit generates a concealment header that is referred to by a receiving apparatus at the time of an error concealment process. On the basis of the concealment header, a loss analysis unit performs error concealment for the occurrence of a transmission error by suitably using encoded data stored in a storage unit.

摘要翻译： 一种信息处理装置和方法，用于在解包处理中减少不必要的等待时间，并使处理能够容易地以适用于例如编码装置的高速执行。 分析单元将输入图像数据与从存储单元读出的一个先前图像的图像数据进行比较。 基于分析结果，隐藏标题生成单元在错误隐藏处理时生成由接收装置参照的隐藏标题。 基于隐藏标题，损失分析单元通过适当地使用存储在存储单元中的编码数据来执行发生错误隐藏。

公开(公告)号：US08307638B2

公开(公告)日：2012-11-13

申请号：US12450065

申请日：2008-03-17

申请人： Nobumoto Ohashi ,  Atsushi Hayashi ,  Masahide Iida ,  Kotaro Hayashi

发明人： Nobumoto Ohashi ,  Atsushi Hayashi ,  Masahide Iida ,  Kotaro Hayashi

IPC分类号： F01N3/00

CPC分类号： F02D41/024 ,  B01D53/9477 ,  B01D53/9495 ,  B01D2251/20 ,  B01D2258/012 ,  F01N3/208 ,  F01N9/00 ,  F01N13/009 ,  F01N2550/02 ,  F02D41/028 ,  F02D41/029 ,  F02D2250/26 ,  Y02T10/24 ,  Y02T10/26 ,  Y02T10/47

摘要： An object of the invention is to recover the capability of an exhaust gas purification apparatus provided in an exhaust passage of an internal combustion engine with improved reliability. According to the invention there are provided recovery control execution unit for executing a recovery control in which the temperature of the exhaust gas purification apparatus is raised by supply of reducing agent to a precatalyst to thereby recover the capability of the exhaust gas purification apparatus and prohibition range setting unit for setting a recovery control prohibition range that is an operation range of the internal combustion engine in which execution of the recovery control by the recovery control execution unit is prohibited. The higher the degree of deterioration of the precatalyst is, the higher the maximum values of the engine torque and the engine revolution number in the recovery control prohibition range are set to be.

摘要翻译： 本发明的目的是提高可靠性来恢复设置在内燃机的排气通道中的废气净化装置的能力。 根据本发明，提供了一种恢复控制执行单元，用于执行恢复控制，其中废气净化装置的温度通过向预催化剂供应还原剂而升高，从而恢复废气净化装置的能力和禁止范围 设定单元，用于设定作为恢复控制执行单元执行恢复控制的内燃机的操作范围的恢复控制禁止范围。 预催化剂的劣化程度越高，恢复控制禁止范围内的发动机转矩和发动机转数的最大值越高。