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公开(公告)号：US09385277B2
公开(公告)日：2016-07-05
申请号：US14550145
申请日：2014-11-21
IPC分类号： H01L27/15 , H01L33/32 , H01L33/16 , H01L33/48 , B82Y20/00 , H01L33/64 , H01S5/022 , H01S5/024 , H01S5/20 , H01S5/343 , H01L33/14
CPC分类号： H01L33/12 , B82Y20/00 , H01L33/06 , H01L33/145 , H01L33/16 , H01L33/32 , H01L33/483 , H01L33/64 , H01L33/641 , H01L2224/48091 , H01S5/0206 , H01S5/02212 , H01S5/0226 , H01S5/02272 , H01S5/02469 , H01S5/02476 , H01S5/0425 , H01S5/2009 , H01S5/32341 , H01S5/34333 , H01S2304/04 , H01L2924/00014
摘要： A semiconductor light emitting device includes: a nitride semiconductor light emitting element including a nitride semiconductor substrate having a polar or semipolar surface and a nitride semiconductor multilayer film stacked on the polar or semipolar surface; and a mounting section to which the element is mounted. The nitride semiconductor multilayer film includes an electron block layer. The electron block layer has a smaller lattice constant than the nitride semiconductor substrate. The mounting section includes at least a first mounting section base. The first mounting section base is located close to the nitride semiconductor light emitting element. The first mounting section base has a lower thermal expansion coefficient than the nitride semiconductor multilayer film. The first mounting section base has a lower thermal conductivity than the nitride semiconductor multilayer film.
摘要翻译： 半导体发光器件包括：氮化物半导体发光元件，其包括具有极性或半极性表面的氮化物半导体衬底和层叠在极性或半极性表面上的氮化物半导体多层膜; 以及安装该元件的安装部。 氮化物半导体多层膜包括电子阻挡层。 电子阻挡层具有比氮化物半导体衬底更小的晶格常数。 安装部分至少包括第一安装部分基部。 第一安装部分基座靠近氮化物半导体发光元件。 第一安装部分底座具有比氮化物半导体多层膜更低的热膨胀系数。 第一安装部分基底具有比氮化物半导体多层膜低的热导率。
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公开(公告)号：US11932263B2
公开(公告)日：2024-03-19
申请号：US16980222
申请日：2019-03-13
发明人： Yuta Moriura , Yoshitaka Nakamura , Yasufumi Kawai , Hiroyuki Handa , Yohei Morishita , Toru Okino , Hiroyuki Hagino , Toru Sakuragawa , Satoshi Morishita
IPC分类号： B60W50/00 , A61B5/11 , A61B5/16 , A61M21/02 , B60H1/00 , B60H3/00 , B60N2/02 , B60W50/14 , A61B5/024 , A61M21/00
CPC分类号： B60W50/0098 , A61B5/1114 , A61B5/1116 , A61B5/1121 , A61B5/165 , A61M21/02 , B60H1/00742 , B60H3/0007 , B60H3/0085 , B60N2/02 , B60W50/14 , A61B5/02444 , A61B2562/0247 , A61M2021/0016 , A61M2021/0022 , A61M2021/0066 , A61M2205/3303 , A61M2205/3553 , A61M2205/3584 , B60W2540/22 , B60W2540/221 , B60W2540/223 , B60W2756/10
摘要： A travel sickness estimation system includes an estimation unit and an output unit. The estimation unit is configured to perform estimation processing of estimating, based on person information indicating conditions of a person who is on board a moving vehicle, whether or not the person is in circumstances that would cause travel sickness for him or her. The output unit is configured to output a result of the estimation processing performed by the estimation unit.
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公开(公告)号：US09735314B2
公开(公告)日：2017-08-15
申请号：US15174525
申请日：2016-06-06
IPC分类号： H01L27/15 , H01L33/12 , H01L33/32 , H01S5/024 , H01S5/20 , H01S5/343 , H01L33/14 , H01L33/16 , H01L33/48 , B82Y20/00 , H01L33/64 , H01L33/06 , H01S5/02 , H01S5/042 , H01S5/323 , H01S5/022
CPC分类号： H01L33/12 , B82Y20/00 , H01L33/06 , H01L33/145 , H01L33/16 , H01L33/32 , H01L33/483 , H01L33/64 , H01L33/641 , H01L2224/48091 , H01S5/0206 , H01S5/02212 , H01S5/0226 , H01S5/02272 , H01S5/02469 , H01S5/02476 , H01S5/0425 , H01S5/2009 , H01S5/32341 , H01S5/34333 , H01S2304/04 , H01L2924/00014
摘要： A semiconductor light emitting device includes: a nitride semiconductor light emitting element including a nitride semiconductor substrate having a polar or semipolar surface and a nitride semiconductor multilayer film stacked on the polar or semipolar surface; and a mounting section to which the element is mounted. The nitride semiconductor multilayer film includes an electron block layer. The electron block layer has a smaller lattice constant than the nitride semiconductor substrate. The mounting section includes at least a first mounting section base. The first mounting section base is located close to the nitride semiconductor light emitting element. The first mounting section base has a lower thermal expansion coefficient than the nitride semiconductor multilayer film. The first mounting section base has a lower thermal conductivity than the nitride semiconductor multilayer film.
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