公开(公告)号：US09385277B2

公开(公告)日：2016-07-05

申请号：US14550145

申请日：2014-11-21

Applicant: Panasonic Intellectual Property Management Co., Ltd.

Inventor： Katsuya Samonji ,  Kazuhiko Yamanaka ,  Shinji Yoshida ,  Hiroyuki Hagino

IPC: H01L27/15 ,  H01L33/32 ,  H01L33/16 ,  H01L33/48 ,  B82Y20/00 ,  H01L33/64 ,  H01S5/022 ,  H01S5/024 ,  H01S5/20 ,  H01S5/343 ,  H01L33/14

CPC classification number: H01L33/12 ,  B82Y20/00 ,  H01L33/06 ,  H01L33/145 ,  H01L33/16 ,  H01L33/32 ,  H01L33/483 ,  H01L33/64 ,  H01L33/641 ,  H01L2224/48091 ,  H01S5/0206 ,  H01S5/02212 ,  H01S5/0226 ,  H01S5/02272 ,  H01S5/02469 ,  H01S5/02476 ,  H01S5/0425 ,  H01S5/2009 ,  H01S5/32341 ,  H01S5/34333 ,  H01S2304/04 ,  H01L2924/00014

Abstract: A semiconductor light emitting device includes: a nitride semiconductor light emitting element including a nitride semiconductor substrate having a polar or semipolar surface and a nitride semiconductor multilayer film stacked on the polar or semipolar surface; and a mounting section to which the element is mounted. The nitride semiconductor multilayer film includes an electron block layer. The electron block layer has a smaller lattice constant than the nitride semiconductor substrate. The mounting section includes at least a first mounting section base. The first mounting section base is located close to the nitride semiconductor light emitting element. The first mounting section base has a lower thermal expansion coefficient than the nitride semiconductor multilayer film. The first mounting section base has a lower thermal conductivity than the nitride semiconductor multilayer film.

Abstract translation: 半导体发光器件包括：氮化物半导体发光元件，其包括具有极性或半极性表面的氮化物半导体衬底和层叠在极性或半极性表面上的氮化物半导体多层膜; 以及安装该元件的安装部。 氮化物半导体多层膜包括电子阻挡层。 电子阻挡层具有比氮化物半导体衬底更小的晶格常数。 安装部分至少包括第一安装部分基部。 第一安装部分基座靠近氮化物半导体发光元件。 第一安装部分底座具有比氮化物半导体多层膜更低的热膨胀系数。 第一安装部分基底具有比氮化物半导体多层膜低的热导率。

公开(公告)号：US11322908B2

公开(公告)日：2022-05-03

申请号：US16670833

申请日：2019-10-31

Applicant: PANASONIC INTELLECTUAL PROPERTY MANAGEMENT CO., LTD.

Inventor： Toru Takayama ,  Tohru Nishikawa ,  Tougo Nakatani ,  Katsuya Samonji ,  Takashi Kano ,  Shinji Ueda

IPC: H01S5/34 ,  H01S5/024 ,  H01S5/026 ,  H01S5/22 ,  H01S5/343 ,  H01S5/023 ,  H01S5/0233 ,  H01S5/0235 ,  H01S5/16 ,  H01S5/02 ,  H01S5/0234 ,  F21Y115/30 ,  F21S41/176 ,  F21S41/16 ,  H01S5/20 ,  H01S5/10 ,  H01S5/0237

Abstract: A nitride light emitter includes: a nitride semiconductor light-emitting element including an AlxGa1-xN substrate (0≤x≤1) and a multilayer structure above the AlxGa1-xN substrate; and a submount substrate on which the nitride semiconductor light-emitting element is mounted. The multilayer structure includes a first clad layer of a first conductivity type, a first light guide layer, a quantum-well active layer, a second light guide layer, and a second clad layer of a second conductivity type which are stacked sequentially from the AlxGa1-xN substrate. The multilayer structure and submount substrate are opposed to each other. The submount substrate comprises diamond. The nitride semiconductor light-emitting element has a concave warp on a surface closer to the AlxGa1-xN substrate.

公开(公告)号：US10680414B2

公开(公告)日：2020-06-09

申请号：US16181993

申请日：2018-11-06

Applicant: PANASONIC INTELLECTUAL PROPERTY MANAGEMENT CO., LTD.

Inventor： Toru Takayama ,  Tougo Nakatani ,  Takashi Kano ,  Katsuya Samonji

IPC: H01S5/20 ,  H01S5/343 ,  H01S5/30 ,  H01L33/14 ,  H01L33/32 ,  H01S5/22 ,  F21Y115/30 ,  F21S41/176 ,  F21S41/16

Abstract: A nitride-based light-emitting device includes, on a GaN substrate: a first-conductivity-side first semiconductor layer; an active layer; and a second-conductivity-side first semiconductor layer, in the stated order, and further includes an electron barrier layer of a second conductivity type between the active layer and the second-conductivity-side first semiconductor layer, the electron barrier layer including a nitride-based semiconductor containing at least Al. The electron barrier layer has a first region in which an Al composition changes. The Al composition in the first region monotonically increases in a direction from the active layer to the second-conductivity-side first semiconductor layer. An impurity concentration in the second-conductivity-side first semiconductor layer is lower in a region nearer the electron barrier layer than in a region farther from the electron barrier layer.

公开(公告)号：US09869453B2

公开(公告)日：2018-01-16

申请号：US14800736

申请日：2015-07-16

Applicant: Panasonic Intellectual Property Management Co., Ltd.

Inventor： Katsuya Samonji ,  Kazuhiko Yamanaka

IPC: F21V13/04 ,  H01S5/40 ,  F21V5/04 ,  F21V9/16 ,  G03B21/20 ,  G02B19/00 ,  G02B27/09 ,  H01S5/00

CPC classification number: F21V13/04 ,  F21V5/04 ,  F21V9/30 ,  G02B19/0028 ,  G02B19/0057 ,  G02B27/0961 ,  G02B27/0983 ,  G03B21/2013 ,  G03B21/2033 ,  G03B21/2066 ,  G03B21/208 ,  H01S5/005 ,  H01S5/0071 ,  H01S5/4025 ,  H01S5/4031 ,  H01S5/4093

Abstract: Provided are a light source, a light source unit, and a light source module that have small sizes, high output, and high coupling efficiency with an optical system, and further, can efficiently dissipate heat generation sources to exhaust heat. In the light source unit of the present disclosure, the light source is a semiconductor laser array. This configuration can realize high output of the light source, and high output of the whole light source unit. The light source unit includes a lens that converts outgoing beams to parallel beams, and an optical element having a plurality of optical surfaces with different minute inclination angles with respect to a principal surface. The minute inclination angles of the plurality of optical surfaces that intersect with optical rays of the plurality of outgoing beams passing through a principal point of the lens are opposite to one another with respect to the principal surface.

公开(公告)号：US11309688B2

公开(公告)日：2022-04-19

申请号：US16584173

申请日：2019-09-26

Applicant: PANASONIC INTELLECTUAL PROPERTY MANAGEMENT CO., LTD.

Inventor： Daisuke Ikeda ,  Gen Shimizu ,  Hideo Kitagawa ,  Toru Takayama ,  Masayuki Ono ,  Katsuya Samonji ,  Osamu Tomita ,  Satoko Kawasaki

IPC: H01S5/343 ,  H01S5/026 ,  H01S5/02 ,  H01S5/22 ,  H01L21/20 ,  H01L21/3065 ,  B28D5/00 ,  H01L33/00 ,  H01L21/285

Abstract: In a method for manufacturing a nitride semiconductor light-emitting element by splitting a semiconductor layer stacked substrate including a semiconductor layer stacked body with a plurality of waveguides extending along the Y-axis to fabricate a bar-shaped substrate, and splitting the bar-shaped substrate along a lengthwise split line to fabricate an individual element, the waveguide in the individual element has different widths at one end portion and the other end portion and the center line of the waveguide is located off the center of the individual element along the X-axis, and in the semiconductor layer stacked substrate including a first element forming region and a second element forming region which are adjacent to each other along the X-axis, two lengthwise split lines sandwiching the first element forming region and two lengthwise split lines sandwiching the second element forming region are misaligned along the X-axis.

公开(公告)号：US09735314B2

公开(公告)日：2017-08-15

申请号：US15174525

申请日：2016-06-06

Applicant: Panasonic Intellectual Property Management Co., Ltd.

Inventor： Katsuya Samonji ,  Kazuhiko Yamanaka ,  Shinji Yoshida ,  Hiroyuki Hagino

IPC: H01L27/15 ,  H01L33/12 ,  H01L33/32 ,  H01S5/024 ,  H01S5/20 ,  H01S5/343 ,  H01L33/14 ,  H01L33/16 ,  H01L33/48 ,  B82Y20/00 ,  H01L33/64 ,  H01L33/06 ,  H01S5/02 ,  H01S5/042 ,  H01S5/323 ,  H01S5/022

CPC classification number: H01L33/12 ,  B82Y20/00 ,  H01L33/06 ,  H01L33/145 ,  H01L33/16 ,  H01L33/32 ,  H01L33/483 ,  H01L33/64 ,  H01L33/641 ,  H01L2224/48091 ,  H01S5/0206 ,  H01S5/02212 ,  H01S5/0226 ,  H01S5/02272 ,  H01S5/02469 ,  H01S5/02476 ,  H01S5/0425 ,  H01S5/2009 ,  H01S5/32341 ,  H01S5/34333 ,  H01S2304/04 ,  H01L2924/00014

Abstract: A semiconductor light emitting device includes: a nitride semiconductor light emitting element including a nitride semiconductor substrate having a polar or semipolar surface and a nitride semiconductor multilayer film stacked on the polar or semipolar surface; and a mounting section to which the element is mounted. The nitride semiconductor multilayer film includes an electron block layer. The electron block layer has a smaller lattice constant than the nitride semiconductor substrate. The mounting section includes at least a first mounting section base. The first mounting section base is located close to the nitride semiconductor light emitting element. The first mounting section base has a lower thermal expansion coefficient than the nitride semiconductor multilayer film. The first mounting section base has a lower thermal conductivity than the nitride semiconductor multilayer film.