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14 条记录 (耗时 0.023 秒)

    Bonded wafer processing method
    1.
    发明授权
    Bonded wafer processing method 失效
    粘合晶片加工方法

    公开(公告)号：US07129172B2

    公开(公告)日：2006-10-31

    申请号：US10811758

    申请日：2004-03-29

    申请人： Patrick Morrow ,  R. Scott List ,  Michael Y. Chan

    发明人： Patrick Morrow ,  R. Scott List ,  Michael Y. Chan

    IPC分类号： H01L21/302

    CPC分类号： H01L21/304 ,  H01L21/187 ,  Y10S438/977

    摘要： According to one embodiment a method is disclosed. The method includes applying a photoresist layer to a first wafer, etching the first wafer, bonding the first wafer to a second wafer and thinning the first wafer; wherein an unsupported bevel portion of the first wafer is removed.

    摘要翻译： 根据一个实施例，公开了一种方法。 该方法包括将光致抗蚀剂层施加到第一晶片，蚀刻第一晶片，将第一晶片接合到第二晶片并使第一晶片变薄; 其中去除第一晶片的未支撑的斜面部分。

    Towel fold configuration
    8.
    发明授权
    Towel fold configuration 有权

    公开(公告)号：US06623833B2

    公开(公告)日：2003-09-23

    申请号：US09951600

    申请日：2001-09-13

    申请人： Michael Y. Chan

    发明人： Michael Y. Chan

    IPC分类号： B32B304

    CPC分类号： B65H45/24 ,  A47K10/424 ,  A47K2010/428 ,  B32B3/04 ,  Y10T428/24231 ,  Y10T428/24264

    摘要： A stack of interleaved towels is provided wherein each towel is configured from a sheet of material having a first fold offset from a centerline of the sheet to generate a folded sheet having a long side and a short side. A second fold in the folded sheet is made substantially parallel to the first fold to create a lead flap and a trailing flap. The lead flap presents a continuous folded leading edge for grasping by a user. The trailing flap is defined between the second fold and edges of the long side and short side. The trailing flap of each towel is disposed against the lead flap of an adjacent towel. In the stack, the short side of the trailing flap is disposed so that it is facing upwards upon a user grasping the lead flap and pulling the towel from a dispenser.

    Memory cell that includes a carbon-based memory element and methods of forming the same
    9.
    发明授权
    Memory cell that includes a carbon-based memory element and methods of forming the same 有权
    包含碳基记忆元件的记忆单元及其形成方法

    公开(公告)号：US08481394B2

    公开(公告)日：2013-07-09

    申请号：US12717457

    申请日：2010-03-04

    申请人： Michael Y. Chan ,  April D. Schricker

    发明人： Michael Y. Chan ,  April D. Schricker

    IPC分类号： H01L21/20

    CPC分类号： H01L27/101 ,  H01L27/1021

    摘要： In a first aspect, a method of forming a memory cell is provided that includes: (a) forming a layer of dielectric material above a substrate; (b) forming an opening in the dielectric layer; (c) depositing a solution that includes a carbon-based switching material on the substrate; (d) rotating the substrate to cause the solution to flow into the opening and to form a carbon-based switching material layer within the opening; and (e) forming a memory element using the carbon-based switching material layer. Numerous other aspects are provided.

    摘要翻译： 在第一方面，提供一种形成存储单元的方法，其包括：（a）在衬底上形成介电材料层; （b）在介质层中形成开口; （c）在衬底上沉积包含碳基开关材料的溶液; （d）旋转基板以使溶液流入开口并在开口内形成碳基开关材料层; 和（e）使用碳基开关材料层形成存储元件。 提供了许多其他方面。