公开(公告)号：US08692286B2

公开(公告)日：2014-04-08

申请号：US11957031

申请日：2007-12-14

申请人： Patrick N. Grillot ,  Rafael I. Aldaz ,  Deborah L. Coblentz ,  Anneli Munkholm ,  Hanmin Zhao

发明人： Patrick N. Grillot ,  Rafael I. Aldaz ,  Deborah L. Coblentz ,  Anneli Munkholm ,  Hanmin Zhao

IPC分类号： H01L33/00 ,  H01L21/00

CPC分类号： H01L33/30 ,  H01L33/0079 ,  H01L33/025

摘要： In some embodiments of the invention, a transparent substrate AlInGaP device includes an etch stop layer that may be less absorbing than a conventional etch stop layer. In some embodiments of the invention, a transparent substrate AlInGaP device includes a bonded interface that may be configured to give a lower forward voltage than a conventional bonded interface. Reducing the absorption and/or the forward voltage in a device may improve the efficiency of the device.

摘要翻译： 在本发明的一些实施例中，透明衬底AlInGaP器件包括可以比常规蚀刻停止层更少吸收的蚀刻停止层。 在本发明的一些实施例中，透明衬底AlInGaP器件包括可被配置为给出比常规接合界面更低的正向电压的接合界面。 降低装置中的吸收和/或正向电压可以提高装置的效率。

公开(公告)号：US07601989B2

公开(公告)日：2009-10-13

申请号：US11692132

申请日：2007-03-27

申请人： John E. Epler ,  Hanmin Zhao ,  Michael R. Krames

发明人： John E. Epler ,  Hanmin Zhao ,  Michael R. Krames

IPC分类号： H01L33/00

CPC分类号： H01L33/16 ,  H01L33/382 ,  H01L2924/0002 ,  H01L2933/0091 ,  H01L2924/00

摘要： In one embodiment, an AlInGaP LED includes a bottom n-type layer, an active layer, a top p-type layer, and a thick n-type GaP layer over the top p-type layer. The thick n-type GaP layer is then subjected to an electrochemical etch process that causes the n-type GaP layer to become porous and light-diffusing. Electrical contact is made to the p-GaP layer under the porous n-GaP layer by providing metal-filled vias through the porous layer, or electrical contact is made through non-porous regions of the GaP layer between porous regions. The LED chip may be mounted on a submount with the porous n-GaP layer facing the submount surface. The pores and metal layer reflect and diffuse the light, which greatly increases the light output of the LED. Other embodiments of the LED structure are described.

摘要翻译： 在一个实施例中，AlInGaP LED包括顶部p型层上的底部n型层，有源层，顶部p型层和厚n型GaP层。 然后对厚的n型GaP层进行电化学蚀刻工艺，其使得n型GaP层变得多孔和光扩散。 通过提供通过多孔层的金属填充的通孔，在多孔n-GaP层下面的p-GaP层进行电接触，或者通过多孔区域之间的GaP层的无孔区域进行电接触。 LED芯片可以安装在多孔n-GaP层面向底座表面的基座上。 孔和金属层反射和扩散光，这大大增加了LED的光输出。 描述LED结构的其它实施例。

公开(公告)号：US07457341B2

公开(公告)日：2008-11-25

申请号：US11360752

申请日：2006-02-23

申请人： Matthew Glenn Peters ,  Hanmin Zhao

发明人： Matthew Glenn Peters ,  Hanmin Zhao

IPC分类号： H01S3/08

CPC分类号： H01S5/12 ,  H01S3/094069 ,  H01S5/1039 ,  H01S5/1203 ,  H01S5/1228 ,  H01S2302/00

摘要： A low optical loss and high efficiency grating is placed within a broad-area high-power laser diode or single spatial mode laser diode to narrow the spectral width and stabilize the emission wavelength. Several embodiments of grating configurations are presented, together with the measured results of a reduction to practice of a particular embodiment.

摘要翻译： 低光损耗和高效率光栅被放置在广域大功率激光二极管或单空间模式激光二极管中，以窄化光谱宽度并稳定发射波长。 呈现了光栅配置的几个实施例，以及减少到特定实施例的实践的测量结果。

公开(公告)号：US20070284607A1

公开(公告)日：2007-12-13

申请号：US11423413

申请日：2006-06-09

申请人： John E. Epler ,  Michael R. Krames ,  Hanmin Zhao ,  James C. Kim

发明人： John E. Epler ,  Michael R. Krames ,  Hanmin Zhao ,  James C. Kim

IPC分类号： H01L33/00 ,  H01L21/00

CPC分类号： H01L33/16 ,  H01L33/0079 ,  H01L33/06 ,  H01L33/20 ,  H01L33/22 ,  H01L33/30 ,  H01L2924/0002 ,  H01L2924/00

摘要： A light emitting device includes a semiconductor structure having a light emitting layer disposed between an n-type region and a p-type region. A porous region is disposed between the light emitting layer and a contact electrically connected to one of the n-type region and the p-type region. The porous region scatters light away from the absorbing contact, which may improve light extraction from the device. In some embodiments the porous region is an n-type semiconductor material such as GaN or GaP.

摘要翻译： 发光器件包括具有设置在n型区域和p型区域之间的发光层的半导体结构。 多孔区域设置在发光层和电连接到n型区域和p型区域之一的接触点之间。 多孔区域将光从吸收接触点散开，这可以改善从设备的光提取。 在一些实施例中，多孔区域是诸如GaN或GaP的n型半导体材料。

公开(公告)号：US08174025B2

公开(公告)日：2012-05-08

申请号：US11423413

申请日：2006-06-09

申请人： John E. Epler ,  Michael R. Krames ,  Hanmin Zhao ,  James C. Kim

发明人： John E. Epler ,  Michael R. Krames ,  Hanmin Zhao ,  James C. Kim

IPC分类号： H01L27/15

CPC分类号： H01L33/16 ,  H01L33/0079 ,  H01L33/06 ,  H01L33/20 ,  H01L33/22 ,  H01L33/30 ,  H01L2924/0002 ,  H01L2924/00

摘要： A light emitting device includes a semiconductor structure having a light emitting layer disposed between an n-type region and a p-type region. A porous region is disposed between the light emitting layer and a contact electrically connected to one of the n-type region and the p-type region. The porous region scatters light away from the absorbing contact, which may improve light extraction from the device. In some embodiments the porous region is an n-type semiconductor material such as GaN or GaP.

摘要翻译： 发光器件包括具有设置在n型区域和p型区域之间的发光层的半导体结构。 多孔区域设置在发光层和电连接到n型区域和p型区域之一的接触点之间。 多孔区域将光从吸收接触点散开，这可以改善从设备的光提取。 在一些实施例中，多孔区域是诸如GaN或GaP的n型半导体材料。

公开(公告)号：US20080237619A1

公开(公告)日：2008-10-02

申请号：US11692132

申请日：2007-03-27

申请人： John E. Epler ,  Hanmin Zhao ,  Michael R. Krames

发明人： John E. Epler ,  Hanmin Zhao ,  Michael R. Krames

IPC分类号： H01L33/00

CPC分类号： H01L33/16 ,  H01L33/382 ,  H01L2924/0002 ,  H01L2933/0091 ,  H01L2924/00

摘要： In one embodiment, an AlInGaP LED includes a bottom n-type layer, an active layer, a top p-type layer, and a thick n-type GaP layer over the top p-type layer. The thick n-type GaP layer is then subjected to an electrochemical etch process that causes the n-type GaP layer to become porous and light-diffusing. Electrical contact is made to the p-GaP layer under the porous n-GaP layer by providing metal-filled vias through the porous layer, or electrical contact is made through non-porous regions of the GaP layer between porous regions. The LED chip may be mounted on a submount with the porous n-GaP layer facing the submount surface. The pores and metal layer reflect and diffuse the light, which greatly increases the light output of the LED. Other embodiments of the LED structure are described.

摘要翻译： 在一个实施例中，AlInGaP LED包括顶部p型层上的底部n型层，有源层，顶部p型层和厚n型GaP层。 然后对厚的n型GaP层进行电化学蚀刻工艺，其使得n型GaP层变得多孔和光扩散。 通过提供通过多孔层的金属填充的通孔，在多孔n-GaP层下面的p-GaP层进行电接触，或者通过多孔区域之间的GaP层的无孔区域进行电接触。 LED芯片可以安装在多孔n-GaP层面向底座表面的基座上。 孔和金属层反射和扩散光，这大大增加了LED的光输出。 描述LED结构的其它实施例。

公开(公告)号：US20060187995A1

公开(公告)日：2006-08-24

申请号：US11360752

申请日：2006-02-23

申请人： Matthew Peters ,  Hanmin Zhao

发明人： Matthew Peters ,  Hanmin Zhao

IPC分类号： H01S3/08 ,  H01S5/20 ,  H01S5/00

CPC分类号： H01S5/12 ,  H01S3/094069 ,  H01S5/1039 ,  H01S5/1203 ,  H01S5/1228 ,  H01S2302/00

摘要： A low optical loss and high efficiency grating is placed within a broad-area high-power laser diode or single spatial mode laser diode to narrow the spectral width and stabilize the emission wavelength. Several embodiments of grating configurations are presented, together with the measured results of a reduction to practice of a particular embodiment.

摘要翻译： 低光损耗和高效率光栅被放置在广域大功率激光二极管或单空间模式激光二极管中，以窄化光谱宽度并稳定发射波长。 呈现了光栅配置的几个实施例，以及减少到特定实施例的实践的测量结果。

公开(公告)号：US06445723B1

公开(公告)日：2002-09-03

申请号：US09313444

申请日：1999-05-18

申请人： Mehrdad Ziari ,  Scott D. DeMars ,  Edward C. Vail ,  Hanmin Zhao

发明人： Mehrdad Ziari ,  Scott D. DeMars ,  Edward C. Vail ,  Hanmin Zhao

IPC分类号： H01S522

CPC分类号： B82Y10/00 ,  G11B7/127 ,  H01S5/0207 ,  H01S5/1014 ,  H01S5/1064 ,  H01S5/164 ,  H01S5/2214 ,  H01S5/2215 ,  H01S5/227 ,  H01S5/3203 ,  H01S5/32341 ,  H01S2301/176 ,  H01S2301/185

摘要： A buried heterostructure (BH) laser source with a narrow active region is disclosed for use in close proximity with optically-addressed data storage media for read/write functionality in a relatively high data density format. The BH laser source is formed on a pregrooved or prepatterned substrate to form mesas upon which epitaxial layers are formed to form laser source active regions that have small emission apertures at the laser source facet output. Selective removal of semiconductor cladding material and replacement of this material with lower refractive index materials provides a way of obtaining further mode size-reduction at the output facet of the laser source. Each mesa has a top surface and adjacent sidewalls such that in the growth of the epitaxial layers above the active region doped with a first conductivity type, the above active region epitaxial layers depositing on the top surface deposit as a first conductivity type and depositing on said sidewalls deposit as a second conductivity type. This growth construction provides for a naturally formed p-n junction at the laser source active region and eliminates the need to perform a subsequent diffusion process to form such a junction. The optical cavities of the laser sources may be tapered so that die cleaving a predetermined point along the length of the optical cavity will provide the desired emission aperture size at the laser source output facet.

摘要翻译： 公开了一种具有窄有源区的掩埋异质结构（BH）激光源，用于与光学寻址数据存储介质紧密接近，以便以相对较高的数据密度格式进行读/写功能。 BH激光源形成在预浸渍或预制图案化的衬底上以形成台面，在其上形成外延层以形成在激光源面输出处具有小发射孔径的激光源有源区。 选择性去除半导体包层材料并用较低折射率材料替代该材料提供了在激光源的输出端获得进一步的模式尺寸减小的方式。 每个台面具有顶表面和相邻的侧壁，使得在掺杂有第一导电类型的有源区上方的外延层的生长中，沉积在顶表面上的上述有源区外延层作为第一导电类型沉积并沉积在所述 侧壁沉积为第二导电类型。 该生长结构提供了在激光源有源区域处的自然形成的p-n结，并且不需要进行随后的扩散过程以形成这种结。 激光源的光腔可以是锥形的，使得沿着光腔的长度切割预定点的管芯将在激光源输出端面处提供期望的发射孔径尺寸。

公开(公告)号：US5926493A

公开(公告)日：1999-07-20

申请号：US859416

申请日：1997-05-20

申请人： Stephen O'Brien ,  Hanmin Zhao ,  Jo S. Major, Jr.

发明人： Stephen O'Brien ,  Hanmin Zhao ,  Jo S. Major, Jr.

IPC分类号： G02B6/12 ,  G02B6/124 ,  H01S5/12 ,  H01S5/125 ,  H01S5/32 ,  H01S5/323 ,  H01S5/34 ,  H01S5/343 ,  H01S3/19 ,  G02B6/34

CPC分类号： B82Y20/00 ,  G02B6/124 ,  H01S5/12 ,  G02B2006/12107 ,  H01S5/125 ,  H01S5/3211 ,  H01S5/32333 ,  H01S5/3408 ,  H01S5/34313 ,  H01S5/3432

摘要： Optical semiconductor devices with integrated diffraction gratings with higher quality are realized through the use of Al-free grating layers. AlGaAs/GaAs regime optical semiconductor devices, such as laser diodes or optical filters, conventionally utilize an AlGaAs grating layer that has a strong affinity for oxidation. Instead of a Al-containing layer, a quantenary, InGaAsP grating layer is utilized, lattice matched to the underlying AlGaAs/GaAs structure, substantially eliminating any problem of oxide contamination. Also, an Al-free, ternary InGaP grating layer is utilized in the InGaP/InGaAsP/GaAs material regime. The quantum well active region of these devices may also be modified to extend the gain bandwidth of operation of these devices to insure continued operation over a wider temperature range with the wavelength peak of the grating in that the wavelength peak of the grating more assuredly remains within the wavelength operating range of the device.

摘要翻译： 具有高质量集成衍射光栅的光学半导体器件通过使用无Al栅格层实现。 诸如激光二极管或滤光器的AlGaAs / GaAs态光学半导体器件通常利用对氧化具有强亲和力的AlGaAs光栅层。 代替含Al层，使用量子化的InGaAsP栅格层，与下面的AlGaAs / GaAs结构晶格匹配，基本上消除了氧化物污染的任何问题。 而且，在InGaP / InGaAsP / GaAs材料体系中使用了不含Al的三元InGaP光栅层。 这些器件的量子阱有源区也可以被修改，以扩大这些器件的工作的增益带宽，以确保在光栅的波长峰值的更宽的温度范围内继续工作，因为光栅的波长峰值更可靠地保持在 设备的波长工作范围。