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公开(公告)号：US20100147364A1
公开(公告)日：2010-06-17
申请号：US12639658
申请日：2009-12-16
IPC分类号： H01L31/048 , H01L31/0203
CPC分类号： H01L31/02021 , H01L31/044 , H01L31/0488 , H01L31/0504 , Y02E10/50
摘要： The present invention provides module structures and methods of manufacturing rigid or flexible photovoltaic modules employing thin film solar cells fabricated on flexible substrates, preferably on flexible metallic foil substrates. The solar cells may be Group IBIIIAVIA compound solar cells or amorphous silicon solar cells fabricated on thin stainless steel or aluminum alloy foils. In one embodiment, initially a solar cell string including two or more solar cells is formed by interconnecting the solar cells with conductive leads or ribbons. At least one bypass diode electrically connects conductive back surfaces of at least two solar cells. The bypass diode and the solar cells are encapsulated with support material and are packed with the protective shell such that the at least one bypass diode is placed between at least one solar cell and the bottom protective sheet. The bypass diode is thermally connected to the back conductive surface of one of the solar cells so that the back conductive surface of the solar cell functions as a heat sink.
摘要翻译： 本发明提供了制造刚性或柔性光伏组件的模块结构和方法，所述光伏模块采用在柔性基板上制造的薄膜太阳能电池，优选地在柔性金属箔基板上。 太阳能电池可以是在薄的不锈钢或铝合金箔上制造的IBIIIAVIA族复合太阳能电池或非晶硅太阳能电池。 在一个实施例中，最初通过将太阳能电池与导电引线或带相互连接来形成包括两个或多个太阳能电池的太阳能电池串。 至少一个旁路二极管电连接至少两个太阳能电池的导电后表面。 旁路二极管和太阳能电池被支撑材料封装并且被封装有保护壳，使得至少一个旁路二极管被放置在至少一个太阳能电池和底部保护片之间。 旁路二极管热连接到太阳能电池之一的背面导电表面，使得太阳能电池的背面导电表面起散热作用。
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2.发明申请Method and Apparatus to Form Back Contacts to Flexible CIGS Solar Cells 审中-公开形成背部触点到柔性CIGS太阳能电池的方法和装置公开(公告)号：US20090266398A1
公开(公告)日：2009-10-29
申请号：US12111161
申请日：2008-04-28
IPC分类号： H01L31/042
CPC分类号： H01L31/0749 , H01L31/022425 , H01L31/0392 , H01L31/03925 , H01L31/03928 , H01L31/0504 , H01L31/0512 , Y02E10/541
摘要： An apparatus for and a method of interconnecting at least two solar cells using contact areas which are formed on the conductive substrates of the solar cells is described. The contact areas are formed by a material removal process which removes high resistance surface layers of the conductive substrates at the contact areas. A stringing process serially interconnects the solar cells by connecting each contact area that is cleared of high resistance surface layer to the terminal of one of the adjacent solar cells.
摘要翻译： 描述了使用形成在太阳能电池的导电基板上的接触区域来互连至少两个太阳能电池的装置和方法。 接触区域通过去除接触区域上的导电基板的高电阻表面层的材料去除工艺形成。 串联过程通过将清除高电阻表面层的每个接触区域连接到相邻太阳能电池之一的端子来串联互连太阳能电池。
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公开(公告)号：US08066840B2
公开(公告)日：2011-11-29
申请号：US12018114
申请日：2008-01-22
CPC分类号： B32B38/10 , B32B38/06 , B32B2457/12 , H01L31/18 , H05K3/041 , H05K3/244 , H05K2201/0326 , H05K2203/0108 , H05K2203/0143 , Y10T156/1041 , Y10T156/1054 , Y10T156/107
摘要： A method of forming metallic connector patterns for solar cells, whereby an embosser having raised features shaped in the form of a metallic connector pattern is used to attach a portion of a metallic foil to a transparent conductive layer formed on a top transparent surface of a solar cell structure. The raised surfaces of the embosser press the metallic foil portion against the transparent conductive layer. Heat and pressure directed to the metallic foil portion attach the metallic foil portion to the underlying transparent conductive layer, and then the rest of the metallic foil, which is not attached to the transparent conductive layer, is removed.
摘要翻译： 一种用于形成用于太阳能电池的金属连接器图案的方法，由此使用具有以金属连接器图案形式形成的凸起特征的压花器将金属箔的一部分附接到形成在太阳能的顶部透明表面上的透明导电层 细胞结构。 压花机的凸起表面将金属箔部分压靠在透明导电层上。 引导到金属箔部分的热和压力将金属箔部分附着到下面的透明导电层上，然后除去未附着到透明导电层的金属箔的其余部分。
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公开(公告)号：US20080173390A1
公开(公告)日：2008-07-24
申请号：US12018114
申请日：2008-01-22
IPC分类号： B32B38/06
CPC分类号： B32B38/10 , B32B38/06 , B32B2457/12 , H01L31/18 , H05K3/041 , H05K3/244 , H05K2201/0326 , H05K2203/0108 , H05K2203/0143 , Y10T156/1041 , Y10T156/1054 , Y10T156/107
摘要： A method of forming metallic connector patterns for solar cells, whereby an embosser having raised features shaped in the form of a metallic connector pattern is used to attach a portion of a metallic foil to a transparent conductive layer formed on a top transparent surface of a solar cell structure. The raised surfaces of the embosser press the metallic foil portion against the transparent conductive layer. Heat and pressure directed to the metallic foil portion attach the metallic foil portion to the underlying transparent conductive layer, and then the rest of the metallic foil, which is not attached to the transparent conductive layer, is removed.
摘要翻译： 一种用于形成用于太阳能电池的金属连接器图案的方法，由此使用具有以金属连接器图案形式形成的凸起特征的压花器将金属箔的一部分附接到形成在太阳能的顶部透明表面上的透明导电层 细胞结构。 压花机的凸起表面将金属箔部分压靠在透明导电层上。 引导到金属箔部分的热和压力将金属箔部分附着到下面的透明导电层上，然后除去未附着到透明导电层的金属箔的其余部分。
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公开(公告)号：US07378356B2
公开(公告)日：2008-05-27
申请号：US10101863
申请日：2002-03-16
IPC分类号： H01L21/31 , H01L21/469
CPC分类号： C23C14/345 , C23C14/0036 , C23C14/081 , C23C14/10 , C23C14/3414 , C23C14/35 , C23C14/354 , C23C14/5806 , C23C14/5873 , G02B6/132 , H01J37/32412 , H01J37/34
摘要： A biased pulse DC reactor for sputtering of oxide films is presented. The biased pulse DC reactor couples pulsed DC at a particular frequency to the target through a filter which filters out the effects of a bias power applied to the substrate, protecting the pulsed DC power supply. Films deposited utilizing the reactor have controllable material properties such as the index of refraction. Optical components such as waveguide amplifiers and multiplexers can be fabricated processes performed on a reactor according to the present inention.
摘要翻译： 提出了一种用于溅射氧化膜的偏压脉冲直流电抗器。 偏置脉冲DC电抗器通过滤波器将特定频率的特定频率的脉冲DC耦合到目标，滤波器滤除施加到衬底的偏置功率的影响，保护脉冲DC电源。 使用反应器沉积的膜具有可控的材料特性，例如折射率。 可以使用根据本发明的反应器上进行的工艺来制造诸如波导放大器和多路复用器的光学部件。
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公开(公告)号：US20050006768A1
公开(公告)日：2005-01-13
申请号：US10789953
申请日：2004-02-26
IPC分类号： C23C14/34 , C23C14/35 , H01L21/314 , H01L21/316 , H01L51/52 , H01L21/4763 , H01L23/48
CPC分类号： C23C14/345 , C23C14/35 , H01L21/02145 , H01L21/02164 , H01L21/02178 , H01L21/02186 , H01L21/02192 , H01L21/02194 , H01L21/022 , H01L21/02266 , H01L21/02304 , H01L21/31604 , H01L21/31608 , H01L21/31612 , H01L21/31616 , H01L21/31637 , H01L21/31691 , H01L51/5253 , H01L51/5256 , H01L51/5265 , Y10S438/958
摘要： In accordance with the present invention, a dielectric barrier layer is presented. A barrier layer according to the present invention includes a densified amorphous dielectric layer deposited on a substrate by pulsed-DC, substrate biased physical vapor deposition, wherein the densified amorphous dielectric layer is a barrier layer. A method of forming a barrier layer according to the present inventions includes providing a substrate and depositing a highly densified, amorphous, dielectric material over the substrate in a pulsed-dc, biased, wide target physical vapor deposition process. Further, the process can include performing a soft-metal breath treatment on the substrate. Such barrier layers can be utilized as electrical layers, optical layers, immunological layers, or tribological layers.
摘要翻译： 根据本发明，提供介电阻挡层。 根据本发明的阻挡层包括通过脉冲DC，衬底偏置物理气相沉积沉积在衬底上的致密非晶介质层，其中致密的非晶介质层是阻挡层。 根据本发明的形成阻挡层的方法包括在脉冲直流偏置的宽目标物理气相沉积工艺中在衬底上提供衬底和沉积高度致密化的非晶形介电材料。 此外，该方法可以包括在基材上进行软金属呼吸处理。 这样的阻挡层可以用作电层，光学层，免疫层或摩擦学层。
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公开(公告)号：US08728285B2
公开(公告)日：2014-05-20
申请号：US10850968
申请日：2004-05-20
IPC分类号： C23C14/34
CPC分类号： H01B13/0026 , C23C14/0036 , C23C14/0042 , C23C14/086
摘要： A method of deposition of a transparent conductive film from a metallic target is presented. A method of forming a transparent conductive oxide film according to embodiments of the present invention include depositing the transparent conductive oxide film in a pulsed DC reactive ion process with substrate bias, and controlling at least one process parameter to affect at least one characteristic of the conductive oxide film. The resulting transparent oxide film, which in some embodiments can be an indium-tin oxide film, can exhibit a wide range of material properties depending on variations in process parameters. For example, varying the process parameters can result in a film with a wide range of resistive properties and surface smoothness of the film.
摘要翻译： 提出了一种从金属靶沉积透明导电膜的方法。 根据本发明的实施方案的形成透明导电氧化物膜的方法包括在具有衬底偏压的脉冲DC反应离子过程中沉积透明导电氧化物膜，并且控制至少一个工艺参数以影响导电的至少一个特性 氧化膜。 所得到的透明氧化物膜（在一些实施方案中可以是铟锡氧化物膜）可以根据工艺参数的变化显示宽范围的材料性质。 例如，改变工艺参数可以产生具有宽范围的电阻性质和膜的表面平滑度的膜。
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公开(公告)号：US07262131B2
公开(公告)日：2007-08-28
申请号：US11228805
申请日：2005-09-16
IPC分类号： H01L21/285
CPC分类号： C23C14/345 , C23C14/35 , H01L21/02145 , H01L21/02164 , H01L21/02178 , H01L21/02186 , H01L21/02192 , H01L21/02194 , H01L21/022 , H01L21/02266 , H01L21/02304 , H01L21/31604 , H01L21/31608 , H01L21/31612 , H01L21/31616 , H01L21/31637 , H01L21/31691 , H01L51/5253 , H01L51/5256 , H01L51/5265 , Y10S438/958
摘要： In accordance with the present invention, a dielectric barrier layer is presented. A barrier layer according to the present invention includes a densified amorphous dielectric layer deposited on a substrate by pulsed-DC, substrate biased physical vapor deposition, wherein the densified amorphous dielectric layer is a barrier layer. A method of forming a barrier layer according to the present inventions includes providing a substrate and depositing a highly densified, amorphous, dielectric material over the substrate in a pulsed-dc, biased, wide target physical vapor deposition process. Further, the process can include performing a soft-metal breath treatment on the substrate. Such barrier layers can be utilized as electrical layers, optical layers, immunological layers, or tribological layers.
摘要翻译： 根据本发明，提供介电阻挡层。 根据本发明的阻挡层包括通过脉冲DC，衬底偏置物理气相沉积沉积在衬底上的致密非晶介质层，其中致密的非晶介质层是阻挡层。 根据本发明的形成阻挡层的方法包括在脉冲直流偏置的宽目标物理气相沉积工艺中在衬底上提供衬底和沉积高度致密化的非晶形介电材料。 此外，该方法可以包括在基材上进行软金属呼吸处理。 这样的阻挡层可以用作电层，光学层，免疫层或摩擦学层。
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公开(公告)号：US20070187383A1
公开(公告)日：2007-08-16
申请号：US11655498
申请日：2007-01-19
IPC分类号： B60L1/02
CPC分类号： H05B3/84 , H05B2203/002 , H05B2203/004
摘要： In accordance with one approach to the invention, elements and sub-elements of a conductive pattern on or in an optical member are designed and arranged to be predominantly or exclusively curved, so as to control the appearance of ray-like disturbances during nighttime point-source viewing situations. In another approach, the sub-elements of the conductive pattern are designed and arranged so as to be a large number of short, linear or curved elements oriented with a large angular distribution.
摘要翻译： 根据本发明的一种方法，光学构件上或光学构件中的导电图案的元件和子元件被设计和布置为主要地或排他地弯曲，以便在夜间点亮期间控制射线状干扰的出现， 来源观看情况。 在另一种方法中，导电图案的子元件被设计和布置为大量的具有大角度分布的短，线性或弯曲元件。
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公开(公告)号：US20060071592A1
公开(公告)日：2006-04-06
申请号：US11228805
申请日：2005-09-16
IPC分类号： H01J1/62
CPC分类号： C23C14/345 , C23C14/35 , H01L21/02145 , H01L21/02164 , H01L21/02178 , H01L21/02186 , H01L21/02192 , H01L21/02194 , H01L21/022 , H01L21/02266 , H01L21/02304 , H01L21/31604 , H01L21/31608 , H01L21/31612 , H01L21/31616 , H01L21/31637 , H01L21/31691 , H01L51/5253 , H01L51/5256 , H01L51/5265 , Y10S438/958
摘要： In accordance with the present invention, a dielectric barrier layer is presented. A barrier layer according to the present invention includes a densified amorphous dielectric layer deposited on a substrate by pulsed-DC, substrate biased physical vapor deposition, wherein the densified amorphous dielectric layer is a barrier layer. A method of forming a barrier layer according to the present inventions includes providing a substrate and depositing a highly densified, amorphous, dielectric material over the substrate in a pulsed-dc, biased, wide target physical vapor deposition process. Further, the process can include performing a soft-metal breath treatment on the substrate. Such barrier layers can be utilized as electrical layers, optical layers, immunological layers, or tribological layers.
摘要翻译： 根据本发明，提供介电阻挡层。 根据本发明的阻挡层包括通过脉冲DC，衬底偏置物理气相沉积沉积在衬底上的致密非晶介质层，其中致密的非晶介质层是阻挡层。 根据本发明的形成阻挡层的方法包括在脉冲直流偏置的宽目标物理气相沉积工艺中在衬底上提供衬底和沉积高度致密化的非晶形介电材料。 此外，该方法可以包括在基材上进行软金属呼吸处理。 这样的阻挡层可以用作电层，光学层，免疫层或摩擦学层。
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