利索-全球专利检索

  1. 登录
  2. 注册

搜索结果

49 条记录 (耗时 0.031 秒)

    Sensor Device For Detection of Dissolved Hydrocarbon Gases in Oil Filled High-Voltage Electrical Equipment
    3.
    发明申请
    Sensor Device For Detection of Dissolved Hydrocarbon Gases in Oil Filled High-Voltage Electrical Equipment 失效
    用于检测充油高压电气设备中溶解的烃类气体的传感器装置

    公开(公告)号：US20070144236A1

    公开(公告)日：2007-06-28

    申请号：US11683739

    申请日：2007-03-08

    申请人： Edward Stokes ,  Peter Sandvik ,  Vinayak Tilak ,  Jeffrey Fedison ,  Elena Babes-Dornea ,  Renyan Qin ,  James Rose ,  Stanton Weaver

    发明人： Edward Stokes ,  Peter Sandvik ,  Vinayak Tilak ,  Jeffrey Fedison ,  Elena Babes-Dornea ,  Renyan Qin ,  James Rose ,  Stanton Weaver

    IPC分类号： G01N27/00

    CPC分类号： G01N33/2841 ,  G01N27/4141

    摘要： A multi-gas sensor device for the detection of dissolved hydrocarbon gases in oil-filled electrical equipment. The device comprising a semiconductor substrate, one or more catalytic metal gate-electrodes deposited on the surface of the semiconductor substrate operable for sensing various gases, and an ohmic contact deposited on the surface of the semiconductor substrate. The semiconductor substrate comprises one of GaN, SiC, AlN, InN, AlGaN, InGaN and AlInGaN. A method for sensing gas in an oil-filled reservoir of electrical equipment, comprising providing a sensor device, immersing the sensor device in the oil-filled reservoir, allowing the gases emitted from the oil to interact with the one or more catalytic metal gate-electrodes, altering the gas as it contacts the catalytic metal gate-electrodes and altering the sensitivity of the sensor.

    摘要翻译： 一种用于检测充油电气设备中溶解的烃类气体的多气体传感器装置。 所述器件包括半导体衬底，沉积在可操作以感测各种气体的半导体衬底的表面上的一个或多个催化金属栅电极和沉积在半导体衬底的表面上的欧姆接触。 半导体衬底包括GaN，SiC，AlN，InN，AlGaN，InGaN和AlInGaN中的一种。 一种用于感测电气设备的充满油的储存器中的气体的方法，包括提供传感器装置，将传感器装置浸入充满油的储存器中，允许从油中排出的气体与一个或多个催化金属栅极 - 电极，当气体接触催化金属栅电极时改变气体并改变传感器的灵敏度。

    APPARATUS, METHODS, AND SYSTEMS HAVING GAS SENSOR WITH CATALYTIC GATE AND VARIABLE BIAS
    5.
    发明申请
    APPARATUS, METHODS, AND SYSTEMS HAVING GAS SENSOR WITH CATALYTIC GATE AND VARIABLE BIAS 审中-公开
    具有气体传感器和可变偏置气体传感器的装置，方法和系统

    公开(公告)号：US20070166832A1

    公开(公告)日：2007-07-19

    申请号：US11687872

    申请日：2007-03-19

    申请人： Vinayak Tilak ,  Kevin Matocha ,  Peter Sandvik

    发明人： Vinayak Tilak ,  Kevin Matocha ,  Peter Sandvik

    IPC分类号： G01N27/00

    CPC分类号： G01N27/4141 ,  Y10T436/218

    摘要： According to some embodiments, an electronics based physical gas sensor includes a semiconductor layer, and at least one contact is electrically coupled to the semiconductor layer. A catalytic gate, having a property that changes when the gate is exposed to an analyte, and a variable bias from a voltage source are also provided.

    摘要翻译： 根据一些实施例，基于电子学的物理气体传感器包括半导体层，并且至少一个触点电耦合到半导体层。 还提供了具有当栅极暴露于分析物时变化的性质的催化栅极和来自电压源的可变偏压。

    Apparatus, methods, and systems having gas sensor with catalytic gate and variable bias
    6.
    发明申请
    Apparatus, methods, and systems having gas sensor with catalytic gate and variable bias 审中-公开
    具有气体传感器和催化栅极和可变偏压的装置，方法和系统

    公开(公告)号：US20060270053A1

    公开(公告)日：2006-11-30

    申请号：US11137845

    申请日：2005-05-26

    申请人： Vinayak Tilak ,  Kevin Matocha ,  Peter Sandvik

    发明人： Vinayak Tilak ,  Kevin Matocha ,  Peter Sandvik

    IPC分类号： G01N33/00 ,  G01N25/26

    CPC分类号： G01N27/4141 ,  Y10T436/218

    摘要： According to some embodiments, an electronics based physical gas sensor includes a semiconductor layer, and at least one contact is electrically coupled to the semiconductor layer. A catalytic gate, having a property that changes when the gate is exposed to an analyte, and a variable bias from a voltage source are also provided.

    摘要翻译： 根据一些实施例，基于电子学的物理气体传感器包括半导体层，并且至少一个触点电耦合到半导体层。 还提供了具有当栅极暴露于分析物时变化的性质的催化栅极和来自电压源的可变偏压。

    SENSORS FOR HIGH-TEMPERATURE ENVIRONMENTS AND METHOD FOR ASSEMBLING SAME
    8.
    发明申请
    SENSORS FOR HIGH-TEMPERATURE ENVIRONMENTS AND METHOD FOR ASSEMBLING SAME 有权
    高温环境传感器及其装配方法

    公开(公告)号：US20120243182A1

    公开(公告)日：2012-09-27

    申请号：US13069509

    申请日：2011-03-23

    申请人： Lam Arthur Campbell ,  Vinayak Tilak

    发明人： Lam Arthur Campbell ,  Vinayak Tilak

    IPC分类号： H05K5/00 ,  H05K9/00 ,  H05K13/04 ,  H05K7/00

    CPC分类号： G01D11/245 ,  Y10T29/49002

    摘要： A sensor assembly includes an outer housing and at least one high-impedance sensing device positioned within the outer housing. The sensor assembly also includes a buffering circuit comprising at least one wide bandgap semiconductor device positioned within the outer housing. The buffering circuit is operatively coupled to the at least one high-impedance sensing device.

    摘要翻译： 传感器组件包括外壳和位于外壳内的至少一个高阻抗感测装置。 传感器组件还包括缓冲电路，该缓冲电路包括位于外部壳体内的至少一个宽带隙半导体器件。 缓冲电路可操作地耦合到至少一个高阻抗感测装置。

    HETEROSTRUCTURE DEVICE AND ASSOCIATED METHOD
    9.
    发明申请
    HETEROSTRUCTURE DEVICE AND ASSOCIATED METHOD 有权
    异体结构设备及相关方法

    公开(公告)号：US20120171824A1

    公开(公告)日：2012-07-05

    申请号：US13418566

    申请日：2012-03-13

    申请人： Vinayak Tilak ,  Alexei Vertiatchikh ,  Kevin Sean Matocha ,  Peter Micah Sandvik ,  Siddharth Rajan

    发明人： Vinayak Tilak ,  Alexei Vertiatchikh ,  Kevin Sean Matocha ,  Peter Micah Sandvik ,  Siddharth Rajan

    IPC分类号： H01L21/335

    CPC分类号： H01L29/7787 ,  H01L29/2003 ,  H01L29/207

    摘要： A method of manufacturing a heterostructure device is provided that includes implantation of ions into a portion of a surface of a multi-layer structure. Iodine ions are implanted between a first region and a second region to form a third region. A charge is depleted from the two dimensional electron gas (2DEG) channel in the third region to form a reversibly electrically non-conductive pathway from the first region to the second region. On applying a voltage potential to a gate electrode proximate to the third region allows electrical current to flow from the first region to the second region.

    摘要翻译： 提供了一种制造异质结构器件的方法，其包括将离子注入到多层结构的表面的一部分中。 碘离子注入第一区域和第二区域之间以形成第三区域。 电荷从第三区域中的二维电子气（2DEG）通道中消耗，以形成从第一区域到第二区域的可逆的非导电通路。 在向靠近第三区域的栅电极施加电压电位时，允许电流从第一区域流到第二区域。

    Gas sensor and method of making
    10.
    发明授权
    Gas sensor and method of making 有权
    气体传感器及制作方法

    公开(公告)号：US07827852B2

    公开(公告)日：2010-11-09

    申请号：US11961092

    申请日：2007-12-20

    申请人： Jun Cui ,  John Patrick Lemmon ,  Kalaga Murali Krishna ,  Geetha Karavoor ,  Vinayak Tilak ,  Mohandas Nayak ,  Ravikumar Hanumantha

    发明人： Jun Cui ,  John Patrick Lemmon ,  Kalaga Murali Krishna ,  Geetha Karavoor ,  Vinayak Tilak ,  Mohandas Nayak ,  Ravikumar Hanumantha

    IPC分类号： G01N7/10

    CPC分类号： G01N27/125 ,  F02D41/146 ,  F02D41/1476

    摘要： A gas sensor is disclosed. The gas sensor includes a gas sensing layer including doped oxygen deficient tungsten oxide and a dopant selected from the group consisting of Re, Ni, Cr, V, W, and a combination thereof, at least one electrode positioned within a layer of titanium, and a response modification layer. The at least one electrode is in communication with the gas sensing layer and the gas sensing layer is capable of detecting at least one gas selected from the group consisting of NO, NO2, SOx O2, H2O, and NH3. A method of fabricating the gas sensor is also disclosed.

    摘要翻译： 公开了一种气体传感器。 气体传感器包括气体感测层，其包括掺杂的氧缺乏氧化钨和选自Re，Ni，Cr，V，W及其组合的掺杂剂，位于钛层内的至少一个电极，以及 响应修改层。 所述至少一个电极与所述气体感测层连通，并且所述气体感测层能够检测至少一种选自NO，NO 2，SO x O 2，H 2 O和NH 3的气体。 还公开了一种制造气体传感器的方法。