公开(公告)号：US07915166B1

公开(公告)日：2011-03-29

申请号：US11710652

申请日：2007-02-22

申请人： Yongsik Yu ,  Pramod Subramonium ,  Zhiyuan Fang ,  Jon Henri ,  Elizabeth Apen ,  Dan Vitkavage

发明人： Yongsik Yu ,  Pramod Subramonium ,  Zhiyuan Fang ,  Jon Henri ,  Elizabeth Apen ,  Dan Vitkavage

IPC分类号： H01L21/302 ,  H01L21/461

CPC分类号： H01L21/3212 ,  H01L21/02115 ,  H01L21/02167 ,  H01L21/02211 ,  H01L21/02274 ,  H01L21/311 ,  H01L21/76807 ,  H01L21/76829 ,  H01L21/76832 ,  H01L21/76834 ,  H01L21/76846 ,  H01L21/76849 ,  H01L21/76855 ,  H01L21/76867

摘要： Films having high hermeticity and a low dielectric constant can be used as copper diffusion barrier films, etch stop films, CMP stop films and other hardmasks during IC fabrication. Hermetic films can protect the underlying layers, such as layers of metal and dielectric, from exposure to atmospheric moisture and oxygen, thereby preventing undesirable oxidation of metal surfaces and absorption of moisture by a dielectric. Specifically, a bi-layer film having a hermetic bottom layer composed of hydrogen doped carbon and a low dielectric constant (low-k) top layer composed of low-k silicon carbide (e.g., high carbon content hydrogen doped silicon carbide) can be employed. Such bi-layer film can be deposited by PECVD methods on a partially fabricated semiconductor substrate having exposed layers of dielectric and metal.

摘要翻译： 在IC制造过程中，可以使用具有高气密性和低介电常数的膜作为铜扩散阻挡膜，蚀刻停止膜，CMP阻挡膜和其它硬掩模。 密封膜可以保护下面的层，例如金属和电介质层，暴露于大气中的水分和氧气，从而防止金属表面的不期望的氧化和电介质吸收水分。 具体而言，可以使用具有由氢掺杂碳组成的气密底层和由低k碳化硅构成的低介电常数（低k）顶层的双层膜（例如，高碳含量氢掺杂碳化硅） 。 这种双层膜可以通过PECVD方法沉积在具有暴露的介电层和金属层的部分制造的半导体衬底上。

公开(公告)号：US07981777B1

公开(公告)日：2011-07-19

申请号：US11710377

申请日：2007-02-22

申请人： Pramod Subramonium ,  Yongsik Yu ,  Zhiyuan Fang ,  Jon Henri

发明人： Pramod Subramonium ,  Yongsik Yu ,  Zhiyuan Fang ,  Jon Henri

IPC分类号： H01L21/00

CPC分类号： H01L21/0332 ,  C23C16/26 ,  C23C16/509 ,  H01L21/02115 ,  H01L21/02274 ,  H01L21/3146

摘要： The present invention provides PECVD methods for forming stable and hermetic ashable hard masks (AHMs). The methods involve depositing AHMs using dilute hydrocarbon precursor gas flows and/or high LFRF/HFRF ratios. In certain embodiments, the AHMs are transparent and have high etch selectivities. Single and dual layer hermetic AHM stacks are also provided. According to various embodiments, the dual layer stack includes an underlying AHM layer having tunable optical properties and a hermetic cap layer.

摘要翻译： 本发明提供了用于形成稳定和密封的可嚼硬掩模（AHM）的PECVD方法。 这些方法涉及使用稀烃前体气体流和/或高LFRF / HFRF比来沉积AHM。 在某些实施方案中，AHM是透明的并且具有高蚀刻选择性。 还提供单层和双层密封AHM堆叠。 根据各种实施例，双层堆叠包括具有可调光学特性的底层AHM层和密封盖层。

公开(公告)号：US08669181B1

公开(公告)日：2014-03-11

申请号：US13032392

申请日：2011-02-22

申请人： Yongsik Yu ,  Pramod Subramonium ,  Zhiyuan Fang ,  Jon Henri ,  Elizabeth Apen ,  Dan Vitkavage

发明人： Yongsik Yu ,  Pramod Subramonium ,  Zhiyuan Fang ,  Jon Henri ,  Elizabeth Apen ,  Dan Vitkavage

IPC分类号： H01L21/44

CPC分类号： H01L21/3212 ,  H01L21/02115 ,  H01L21/02167 ,  H01L21/02211 ,  H01L21/02274 ,  H01L21/311 ,  H01L21/76807 ,  H01L21/76829 ,  H01L21/76832 ,  H01L21/76834 ,  H01L21/76846 ,  H01L21/76849 ,  H01L21/76855 ,  H01L21/76867

摘要： Films having high hermeticity and a low dielectric constant can be used as copper diffusion barrier films, etch stop films, CMP stop films and other hardmasks during IC fabrication. Hermetic films can protect the underlying layers, such as layers of metal and dielectric, from exposure to atmospheric moisture and oxygen, thereby preventing undesirable oxidation of metal surfaces and absorption of moisture by a dielectric. Specifically, a bi-layer film having a hermetic bottom layer composed of hydrogen doped carbon and a low dielectric constant (low-k) top layer composed of low-k silicon carbide (e.g., high carbon content hydrogen doped silicon carbide) can be employed. Such bi-layer film can be deposited by PECVD methods on a partially fabricated semiconductor substrate having exposed layers of dielectric and metal.

摘要翻译： 在IC制造过程中，可以使用具有高气密性和低介电常数的膜作为铜扩散阻挡膜，蚀刻停止膜，CMP阻挡膜和其它硬掩模。 密封膜可以保护下面的层，例如金属和电介质层，暴露于大气中的水分和氧气，从而防止金属表面的不期望的氧化和电介质吸收水分。 具体而言，可以使用具有由氢掺杂碳组成的气密底层和由低k碳化硅构成的低介电常数（低k）顶层的双层膜（例如，高碳含量氢掺杂碳化硅） 。 这种双层膜可以通过PECVD方法沉积在具有暴露的介电层和金属层的部分制造的半导体衬底上。

公开(公告)号：US08591659B1

公开(公告)日：2013-11-26

申请号：US12355601

申请日：2009-01-16

申请人： Zhiyuan Fang ,  Pramod Subramonium ,  Jon Henri ,  Keith Fox

发明人： Zhiyuan Fang ,  Pramod Subramonium ,  Jon Henri ,  Keith Fox

IPC分类号： B08B9/08

CPC分类号： B08B7/0035 ,  B08B9/00 ,  C23C16/4405 ,  H01J37/32357 ,  H01J37/32862

摘要： Improved methods and apparatuses for removing residue from the interior surfaces of the deposition reactor are provided. The methods involve increasing availability of cleaning reagent radicals inside the deposition chamber by generating cleaning reagent radicals in a remote plasma generator and then further delivering in-situ plasma energy while the cleaning reagent mixture is introduced into the deposition chamber. Certain embodiments involve a multi-stage process including a stage in which the cleaning reagent mixture is introduced at a high pressure (e.g., about 0.6 Torr or more) and a stage the cleaning reagent mixture is introduced at a low pressure (e.g., about 0.6 Torr or less).

摘要翻译： 提供了用于从沉积反应器的内表面除去残留物的改进的方法和装置。 这些方法涉及通过在远程等离子体发生器中产生清洁试剂自由基，然后在将清洁试剂混合物引入沉积室的同时进一步输送原位等离子体能量来增加沉积室内清洗剂自由基的可用性。 某些实施方案涉及多级方法，其包括其中以高压（例如，约0.6托或更高）引入清洗剂混合物的阶段，以及在低压（例如约0.6）下引入清洗试剂混合物的阶段 乇以下）。

公开(公告)号：US07981810B1

公开(公告)日：2011-07-19

申请号：US11449983

申请日：2006-06-08

申请人： Pramod Subramonium ,  Zhiyuan Fang ,  Jon Henri

发明人： Pramod Subramonium ,  Zhiyuan Fang ,  Jon Henri

IPC分类号： H01L21/31

CPC分类号： H01L21/3146 ,  C23C16/26 ,  H01L21/02115 ,  H01L21/02274 ,  H01L21/31144

摘要： The present invention addresses this need by providing a method for forming transparent PECVD deposited ashable hardmasks (AHMs) that have high plasma etch selectivity to underlying layers. Methods of the invention involve depositing the AHM using dilute hydrocarbon precursor gas flows and/or low process temperatures. The AHMs produced are transparent (having absorption coefficients of less than 0.1 in certain embodiments). The AHMs also have the property of high selectivity of the hard mask film to the underlying layers for successful integration of the film, and are suitable for use with 193 nm generation and below lithography schemes wherein high selectivity of the hard mask to the underlying layers is required. The lower temperature process also allows reduction of the overall thermal budget for a wafer.

摘要翻译： 本发明通过提供一种用于形成对下层具有高等离子体蚀刻选择性的透明PECVD沉积可吸入硬掩模（AHM）的方法来满足这一需要。 本发明的方法包括使用稀烃前体气流和/或低工艺温度沉积AHM。 所生产的AHM是透明的（在某些实施方案中吸收系数小于0.1）。 AHM还具有硬掩模膜对下层的高选择性，成功地将薄膜整合的性质，并且适用于193nm生成和低于光刻方案的应用，其中硬掩模对下层的高选择性为 需要。 较低的温度过程还可以降低晶片的整体热预算。

公开(公告)号：US08435608B1

公开(公告)日：2013-05-07

申请号：US12163670

申请日：2008-06-27

申请人： Pramod Subramonium ,  Zhiyuan Fang ,  Shawn Hancock ,  Mike Pierce ,  Jon Henri

发明人： Pramod Subramonium ,  Zhiyuan Fang ,  Shawn Hancock ,  Mike Pierce ,  Jon Henri

IPC分类号： H05H1/24

CPC分类号： H01L21/0273 ,  C23C16/045 ,  C23C16/26 ,  C23C16/505 ,  H01L21/02115 ,  H01L21/02274 ,  H01L21/0332 ,  H01L21/0337

摘要： Provided are plasma enhanced chemical vapor deposition methods of depositing smooth and conformal ashable hard mask films on substrates containing raised or recessed features. The methods involve using precursors having relatively high C:H ratios, such as acetylene (C:H ratio of 1), and plasmas having low ion energies and fluxes. According to various embodiments, the methods involve depositing smooth ashable hard mask films using high frequency radio frequency-generated plasmas with no low frequency component and/or relatively high pressures (e.g., 2-5 Torr). Also provided are methods of depositing ashable hard mask films having good selectivity and improved side wall coverage and roughness. The methods involve depositing a first ashable hard mask film on a substrate having a feature using a process optimized for selectivity and/or optical properties and then depositing a smoothing layer on the first ashable hard mask film using an HF-only process.

摘要翻译： 提供了等离子体增强化学气相沉积方法，其在含有凸起或凹陷特征的基底上沉积光滑和保形的可硬化硬掩模膜。 所述方法包括使用具有相对较高C:H比例的前体，例如乙炔（C：H比为1）和具有低离子能量和通量的等离子体。 根据各种实施方案，所述方法包括使用没有低频分量和/或相对高的压力（例如，2-5托）的高频无线电频率产生的等离子体沉积光滑的可硬化硬掩模薄膜。 还提供了具有良好选择性和改进的侧壁覆盖度和粗糙度的可沉积硬掩模膜的方法。 所述方法包括使用针对选择性和/或光学性质优化的方法在具有特征的基底上沉积第一可硬化硬掩模膜，然后使用仅HF工艺在第一可吸收硬掩模膜上沉积平滑层。

公开(公告)号：US08110493B1

公开(公告)日：2012-02-07

申请号：US12048967

申请日：2008-03-14

申请人： Pramod Subramonium ,  Zhiyuan Fang ,  Jon Henri

发明人： Pramod Subramonium ,  Zhiyuan Fang ,  Jon Henri

IPC分类号： H01L21/4763

CPC分类号： C23C16/26 ,  C23C16/45523 ,  C23C16/515 ,  H01L21/02115 ,  H01L21/02274 ,  H01L21/0332

摘要： A method for forming a PECVD deposited amorphous carbon or ashable hard mask (AHM) in a trench or a via with less than 30% H content at a process temperature below 500° C., e.g., about 400° C. produces low H content hard masks with high selectivity and little or no hard mask on the sidewalls. The deposition method utilizes a pulsed precursor delivery with a plasma etch while the precursor flow is off.

摘要翻译： 在低于500℃（例如约400℃）的过程温度下，在沟槽或通孔中形成具有小于30％H含量的PECVD沉积的无定形碳或可灰化硬掩模（AHM）的方法产生低H含量 具有高选择性的硬掩模和侧壁上的很少或没有硬掩模。 沉积方法利用等离子体蚀刻的脉冲前驱物传输，同时前体流离开。

公开(公告)号：US07381644B1

公开(公告)日：2008-06-03

申请号：US11318269

申请日：2005-12-23

申请人： Pramod Subramonium ,  Zhiyuan Fang ,  Jon Henri

发明人： Pramod Subramonium ,  Zhiyuan Fang ,  Jon Henri

IPC分类号： H01L21/44

CPC分类号： H01L21/02115 ,  C23C16/26 ,  C23C16/515 ,  H01L21/02274 ,  H01L21/0228 ,  H01L21/0332 ,  H01L21/3146 ,  Y10S438/942

摘要： A method for forming a PECVD deposited ashable hardmask (AHM) with less than 30% H content at a process temperature below 500° C., e.g., about 400° C. produces low H content hard masks having the property of high selectivity of the hard mask film to the underlying layers for successful integration of the film, and are suitable for use with 193 nm generation and below lithography schemes wherein high selectivity of the hard mask to the underlying layers is required. The low temperature, low H films are produced by use of a pulsed film hydrocarbon precursor plasma treatment that reduces the amount of hydrogen incorporated in the film and therefore drives down the etch rate of the hard mask thus increasing the selectivity. The lower temperature process also allows reduction of the overall thermal budget for a wafer.

摘要翻译： 在低于500℃（例如约400℃）的过程温度下形成具有小于30％H含量的PECVD沉积的可吸入硬掩模（AHM）的方法产生具有高选择性的低H含量硬掩模 硬掩模膜到底层以便成功地整合膜，并且适用于需要193nm生成和低于光刻方案，其中需要硬掩模到底层的高选择性。 通过使用脉冲膜烃前体等离子体处理来生产低温低H膜，其减少了掺入膜中的氢的量，因此降低了硬掩模的蚀刻速率，从而提高了选择性。 较低的温度过程还可以降低晶片的整体热预算。