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    Nucleic acids encoding plant inhibitors of apoptosis and transgenic cells and plants expressing them
    4.
    发明授权
    Nucleic acids encoding plant inhibitors of apoptosis and transgenic cells and plants expressing them 失效
    编码植物抑制剂的核酸和表达它们的转基因细胞和植物

    公开(公告)号：US06570069B1

    公开(公告)日：2003-05-27

    申请号：US09502528

    申请日：2000-02-10

    申请人： Bruce D. Hammock ,  Qihong Huang ,  Susumu Maeda

    发明人： Bruce D. Hammock ,  Qihong Huang ,  Susumu Maeda

    IPC分类号： A01H500

    CPC分类号： C12N15/8263 ,  C07K14/43563 ,  C07K14/4747 ,  C12N2799/026

    摘要： The present invention is generally directed to Inhibitor of Apoptosis Proteins (“IAPs”), nucleic acid molecules encoding IAPs, viral vectors, recombinant baculoviruses comprising an IAP, transgenic plants comprising an IAP nucleic acid, and methods of assaying for compounds which bind to an IAP. In general, the IAP nucleic acids of the invention have 95% or higher identity to SEQ ID NO:1 and the IAP of the invention have 90% or higher identity to SEQ ID NO:3.

    摘要翻译： 本发明一般涉及凋亡蛋白（“IAP”）抑制剂，编码IAP的核酸分子，病毒载体，包含IAP的重组杆状病毒，包含IAP核酸的转基因植物，以及测定与 IAP。 通常，本发明的IAP核酸与SEQ ID NO：1具有95％或更高的同一性，并且本发明的IAP与SEQ ID NO：3具有90％或更高的同一性。

    Silicon wafer and method for heat-treating silicon wafer
    7.
    发明授权
    Silicon wafer and method for heat-treating silicon wafer 有权
    硅晶片和硅晶片热处理方法

    公开(公告)号：US08999864B2

    公开(公告)日：2015-04-07

    申请号：US13322080

    申请日：2010-05-28

    申请人： Takeshi Senda ,  Hiromichi Isogai ,  Eiji Toyoda ,  Koji Araki ,  Tatsuhiko Aoki ,  Haruo Sudo ,  Koji Izunome ,  Susumu Maeda ,  Kazuhiko Kashima ,  Hiroyuki Saito

    发明人： Takeshi Senda ,  Hiromichi Isogai ,  Eiji Toyoda ,  Koji Araki ,  Tatsuhiko Aoki ,  Haruo Sudo ,  Koji Izunome ,  Susumu Maeda ,  Kazuhiko Kashima ,  Hiroyuki Saito

    IPC分类号： H01L21/26 ,  H01L21/00 ,  H01L21/322

    CPC分类号： H01L21/3225 ,  Y10S438/928

    摘要： A silicon wafer for preventing a void defect in a bulk region from becoming source of contamination and slip generation in a device process is provided. And a heat-treating method thereof for reducing crystal defects such as COP in a region near the wafer surface to be a device active region is provided. The silicon wafer has a surface region 1 which is a defect-free region and a bulk region 2 including void defect of a polyhedron whose basic shape is an octahedron in which a corner portion of the polyhedron is in the curved shape and an inner-wall oxide film the void defect is removed. The silicon wafer is provided by performing a heat-treating method in which gas to be supplied, inner pressure of spaces and a maximum achievable temperature are set to a predetermined value when subjecting the silicon wafer produced by a CZ method to RTP.

    摘要翻译： 提供了一种用于防止大块区域中的空隙缺陷成为装置处理中的污染源和滑移产生的硅晶片。 并且提供了一种用于在晶片表面附近的区域中减少诸如COP之类的晶体缺陷的热处理方法作为器件有源区。 硅晶片具有作为无缺陷区域的表面区域1和包括多面体的空隙的主体区域2，其基本形状为八面体，多面体的角部为弯曲形状，内壁 氧化膜去除空隙缺陷。 通过进行热处理方法来提供硅晶片，当将通过CZ方法制造的硅晶片经受RTP时，将待供给的气体，空间的内部压力和最大可实现温度设定为预定值。

    STATOR WINDING OF ELECTRICAL ROTATING MACHINE
    8.
    发明申请
    STATOR WINDING OF ELECTRICAL ROTATING MACHINE 有权
    电动旋转机定子绕组

    公开(公告)号：US20140346914A1

    公开(公告)日：2014-11-27

    申请号：US14372226

    申请日：2012-04-19

    申请人： Yoichi Funasaki ,  Kiyonori Koga ,  Susumu Maeda

    发明人： Yoichi Funasaki ,  Kiyonori Koga ,  Susumu Maeda

    IPC分类号： H02K3/28

    CPC分类号： H02K3/28

    摘要： In a three-phase, four-pole, four-parallel-circuit stator winding of an electrical rotating machine, each of two sets of U-phase output terminals U1, U2 is formed of two sets of parallel circuits each formed of windings having a same pitch (one is formed of first and second winding circuits 1, 2 and the other is formed of third and fourth winding circuits 3, 4). The winding of each winding circuit is formed of two serially-connected coil phase bands (coil phase bands a and b form the first winding circuit 1 and coil phase bands c and d, coil phase bands e and f, and coil phase bands g and h form the second, third, and fourth winding circuits 2, 3, 4, respectively). A voltage vector phase difference and a voltage difference between the winding circuits can be eliminated without providing a jumper wire to winding end portions.

    摘要翻译： 在旋转电机的三相四极并联电路定子绕组中，两组U相输出端子U1，U2中的每一组由两组并联电路组成，每组由具有 相同的间距（一个由第一和第二绕组电路1,2形成，另一个由第三和第四绕组电路3,4组成）。 每个绕组电路的绕组由两个串联的线圈相位带（线圈相位带a和b形成第一绕组电路1和线圈相位带c和d，线圈相位​​带e和f以及线圈相位带g和 h分别形成第二，第三和第四绕组电路2,3,4）。 可以消除绕组电路之间的电压矢量相位差和电压差，而不向绕组端部提供跨接线。

    STEEL FOR NITRIDING AND NITRIDED COMPONENT
    9.
    发明申请
    STEEL FOR NITRIDING AND NITRIDED COMPONENT 审中-公开
    用于硝化和硝化组分的钢

    公开(公告)号：US20140034194A1

    公开(公告)日：2014-02-06

    申请号：US13982594

    申请日：2012-01-26

    申请人： Hideki Imataka ,  Masato Yuya ,  Yuya Gyotoku ,  Atsushi Kobayashi ,  Susumu Maeda

    发明人： Hideki Imataka ,  Masato Yuya ,  Yuya Gyotoku ,  Atsushi Kobayashi ,  Susumu Maeda

    IPC分类号： C22C38/50 ,  C22C38/46 ,  C22C38/44 ,  C22C38/28 ,  C22C38/00 ,  C22C38/22 ,  C22C38/20 ,  C22C38/06 ,  C22C38/04 ,  C22C38/02 ,  C23C8/26 ,  C22C38/24

    CPC分类号： C22C38/50 ,  C21D1/06 ,  C21D9/32 ,  C22C38/001 ,  C22C38/02 ,  C22C38/04 ,  C22C38/06 ,  C22C38/20 ,  C22C38/22 ,  C22C38/24 ,  C22C38/28 ,  C22C38/44 ,  C22C38/46 ,  C23C8/26

    摘要： A steel for nitriding having a chemical composition consisting of, by mass percent, C: 0.07-0.14%, Si: 0.10-0.30%, Mn: 0.4-1.0%, S: 0.005-0.030%, Cr: 1.0-1.5%, Mo: ≦0.05% (including 0%), Al: 0.010% or more to less than 0.10%, V: 0.10-0.25%, optionally at least one element selected from Cu: ≦0.30% and Ni: ≦0.25% [0.61Mn+1.11Cr+0.35Mo+0.47≦2.30], and the balance of Fe and impurities. P, N, Ti and O among the impurities are P: ≦0.030%, N: ≦0.008%, Ti: ≦0.005%, and O: ≦0.0030%. The steel is easily subjected to cutting before nitriding and suitable for use as an automobile ring gear. The nitrided component having a surface hardness of 650-900 HV, core hardness being ≧150 HV, and effective case depth of ≧0.15 mm has excellent bending fatigue strength and surface fatigue strength although the content of Mo is as low as ≦0.05% and has a small amount of expansion caused by nitriding.

    摘要翻译： 按质量％计含有C：0.07-0.14％，Si：0.10-0.30％，Mn：0.4-1.0％，S：0.005-0.030％，Cr：1.0-1.5％的化学组成的氮化氮钢， Mo：≤0.05％（包括0％），Al：0.010％以上至小于0.10％，V：0.10-0.25％，任选至少一种选自Cu：0.30％和Ni：0.25％的元素[0.61 Mn +1.11Cr+0.35Mo+0.47@2.30]，余量为Fe和杂质。 杂质中的P，N，Ti和O分别为P：@ 0.030％，N：0.008％，Ti：0.005％，O：0.0030％。 钢在氮化之前易于切割，适用于汽车齿圈。 表面硬度为650-900HV，芯硬度> 150HV，有效壳深度≥0.15mm的氮化组分具有优异的弯曲疲劳强度和表面疲劳强度，尽管Mo的含量低至≤0.05 ％，渗氮少量膨胀。