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    Near single-crystalline, high-carrier-mobility silicon thin film on a polycrystalline/amorphous substrate
    1.
    发明授权
    Near single-crystalline, high-carrier-mobility silicon thin film on a polycrystalline/amorphous substrate 失效
    在多晶/非晶衬底上的单晶，高载流子迁移率硅薄膜附近

    公开(公告)号：US07608335B2

    公开(公告)日：2009-10-27

    申请号：US11001461

    申请日：2004-11-30

    申请人： Alp T. Findikoglu ,  Quanxi Jia ,  Paul N. Arendt ,  Vladimir Matias ,  Woong Choi

    发明人： Alp T. Findikoglu ,  Quanxi Jia ,  Paul N. Arendt ,  Vladimir Matias ,  Woong Choi

    IPC分类号： B32B9/00 ,  B32B9/04 ,  B32B13/04

    CPC分类号： C30B29/06 ,  C30B25/18 ,  H01L21/0237 ,  H01L21/0242 ,  H01L21/02488 ,  H01L21/02505 ,  H01L21/02521 ,  H01L21/02532 ,  H01L21/02587 ,  H01L21/02658

    摘要： A template article including a base substrate including: (i) a base material selected from the group consisting of polycrystalline substrates and amorphous substrates, and (ii) at least one layer of a differing material upon the surface of the base material; and, a buffer material layer upon the base substrate, the buffer material layer characterized by: (a) low chemical reactivity with the base substrate, (b) stability at temperatures up to at least about 800° C. under low vacuum conditions, and (c) a lattice crystal structure adapted for subsequent deposition of a semiconductor material; is provided, together with a semiconductor article including a base substrate including: (i) a base material selected from the group consisting of polycrystalline substrates and amorphous substrates, and (ii) at least one layer of a differing material upon the surface of the base material; and, a buffer material layer upon the base substrate, the buffer material layer characterized by: (a) low chemical reactivity with the base substrate, (b) stability at temperatures up to at least about 800° C. under low vacuum conditions, and (c) a lattice crystal structure adapted for subsequent deposition of a semiconductor material, and, a top-layer of semiconductor material upon the buffer material layer.

    摘要翻译： 一种模板制品，包括基底，其包括：（i）选自多晶基底和非晶基底的基材，和（ii）在所述基材表面上的至少一层不同材料; 以及在所述基底基板上的缓冲材料层，所述缓冲材料层的特征在于：（a）与所述基底基板的化学反应性低，（b）在低真空条件下在至少约800℃的温度下的稳定性;以及 （c）适于随后沉积半导体材料的晶格结构; 与包括基底基板的半导体产品一起提供，所述半导体产品包括：（i）选自多晶基底和非晶基底的基材，和（ii）在基底表面上的至少一层不同材料 材料; 以及在所述基底基板上的缓冲材料层，所述缓冲材料层的特征在于：（a）与所述基底基板的化学反应性低，（b）在低真空条件下在至少约800℃的温度下的稳定性，以及 （c）适于随后沉积半导体材料的晶格结构结构，以及半导体材料的顶层在缓冲材料层上。

    COATED CONDUCTOR ARCHITECTURE
    2.
    发明申请
    COATED CONDUCTOR ARCHITECTURE 审中-公开
    涂层导体架构

    公开(公告)号：US20110111964A1

    公开(公告)日：2011-05-12

    申请号：US12850311

    申请日：2010-08-04

    申请人： Quanxi Jia ,  Vladimir Matias ,  Alp T. Findikoglu ,  David M. Feldmann

    发明人： Quanxi Jia ,  Vladimir Matias ,  Alp T. Findikoglu ,  David M. Feldmann

    IPC分类号： H01L39/12 ,  B32B15/04 ,  B32B9/00

    CPC分类号： H01L39/2461 ,  Y10T428/265

    摘要： A simplified architecture for a superconducting coated conductor is provided and includes a substrate, a layer of titanium nitride directly upon the substrate, the layer of titanium nitride deposited by ion beam assisted deposition (IBAD), a layer of a buffer material having chemical and structural compatibility with said layer of titanium nitride, the buffer material layer directly upon the IBAD-titanium nitride layer, and a layer of a high temperature superconductive material such as YBCO.

    摘要翻译： 提供了一种用于超导涂层导体的简化体系结构，其中包括基片，直接在基片上的氮化钛层，通过离子束辅助沉积（IBAD）沉积的氮化钛层，具有化学和结构的缓冲材料层 与所述氮化钛层的相容性，直接在IBAD-氮化钛层上的缓冲材料层和诸如YBCO的高温超导材料层。

    Dynamic time expansion and compression using nonlinear waveguides
    6.
    发明授权
    Dynamic time expansion and compression using nonlinear waveguides 失效
    使用非线性波导的动态时间扩展和压缩

    公开(公告)号：US06753741B1

    公开(公告)日：2004-06-22

    申请号：US09985522

    申请日：2001-11-05

    申请人： Alp T. Findikoglu ,  Sangkoo F. Hahn ,  Quanxi Jia

    发明人： Alp T. Findikoglu ,  Sangkoo F. Hahn ,  Quanxi Jia

    IPC分类号： H01P300

    CPC分类号： H01P3/003

    摘要： Dynamic time expansion or compression of a small-amplitude input signal generated with an initial scale is performed using a nonlinear waveguide. A nonlinear waveguide having a variable refractive index is connected to a bias voltage source having a bias signal amplitude that is large relative to the input signal to vary the reflective index and concomitant speed of propagation of the nonlinear waveguide and an electrical circuit for applying the small-amplitude signal and the large amplitude bias signal simultaneously to the nonlinear waveguide. The large amplitude bias signal with the input signal alters the speed of propagation of the small-amplitude signal with time in the nonlinear waveguide to expand or contract the initial time scale of the small-amplitude input signal.

    摘要翻译： 使用非线性波导进行用初始刻度产生的小振幅输入信号的动态时间展开或压缩。 具有可变折射率的非线性波导连接到具有相对于输入信号大的偏置信号幅度的偏置电压源，以改变非线性波导的反射指数和伴随传播速度，以及用于施加小的 - 幅度信号和大振幅偏置信号同时到非线性波导。 具有输入信号的大振幅偏置信号在非线性波导中随时间改变小振幅信号的传播速度，以扩大或缩小小振幅输入信号的初始时间尺度。

    High temperature superconducting thick films
    7.
    发明申请
    High temperature superconducting thick films 审中-公开
    高温超导厚膜

    公开(公告)号：US20100009176A1

    公开(公告)日：2010-01-14

    申请号：US11094742

    申请日：2005-03-29

    申请人： Paul N. Arendt ,  Stephen R. Foltyn ,  James R. Groves ,  Terry G. Holesinger ,  Quanxi Jia

    发明人： Paul N. Arendt ,  Stephen R. Foltyn ,  James R. Groves ,  Terry G. Holesinger ,  Quanxi Jia

    IPC分类号： B32B15/04

    CPC分类号： H01L39/2461 ,  C23C14/081 ,  C30B23/02 ,  C30B29/22 ,  C30B29/225 ,  Y10T428/265

    摘要： An article including a substrate, a layer of an inert oxide material upon the surface of the substrate, (generally the inert oxide material layer has a smooth surface, i.e., a RMS roughness of less than about 2 nm), a layer of an amorphous oxide or oxynitride material upon the inert oxide material layer, a layer of an oriented cubic oxide material having a rock-salt-like structure upon the amorphous oxide material layer is provided together with additional layers such as at least one layer of a buffer material upon the oriented cubic oxide material layer or a HTS top-layer of YBCO directly upon the oriented cubic oxide material layer. With a HTS top-layer of YBCO upon at least one layer of a buffer material in such an article, Jc's of 1.4×106 A/cm2 have been demonstrated with projected Ic's of 210 Amperes across a sample 1 cm wide.

    摘要翻译： 包括衬底，在衬底表面上的惰性氧化物材料层（通常惰性氧化物材料层具有光滑表面，即小于约2nm的RMS粗糙度）的物品，非晶态层 氧化物或氧氮化物材料在惰性氧化物材料层上，在非晶形氧化物材料层上具有岩盐状结构的定向立方氧化物材料层与另外的层一起提供，例如至少一层缓冲材料层 定向的立方氧化物材料层或YBCO的HTS顶层直接在取向的立方氧化物材料层上。 在这种制品中至少一层缓冲材料上具有HTS顶层的YBCO，已经证明了Jc为1.4×10 6 A / cm 2，并且在1cm宽的样品上已经证明了具有210安培的投影Ic。

    Substrate structure for growth of highly oriented and/or epitaxial layers thereon
    8.
    发明授权
    Substrate structure for growth of highly oriented and/or epitaxial layers thereon 有权
    用于在其上生长高定向和/或外延层的衬底结构

    公开(公告)号：US06921741B2

    公开(公告)日：2005-07-26

    申请号：US10359808

    申请日：2003-02-07

    申请人： Paul N. Arendt ,  Stephen R. Foltyn ,  James R. Groves ,  Quanxi Jia

    发明人： Paul N. Arendt ,  Stephen R. Foltyn ,  James R. Groves ,  Quanxi Jia

    IPC分类号： C23C14/08 ,  C30B23/02 ,  H01L39/24 ,  B32B19/00 ,  B32B9/00 ,  H01L39/00

    CPC分类号： H01L39/2461 ,  C23C14/081 ,  C30B23/02 ,  C30B29/22 ,  C30B29/225 ,  Y10T428/265

    摘要： A composite substrate structure including a substrate, a layer of a crystalline metal oxide or crystalline metal oxynitride material upon the substrate, a layer of an oriented cubic oxide material having a rock-salt-like structure upon the crystalline metal oxide or crystalline metal oxynitride material layer is provided together with additional layers such as one or more layers of a buffer material upon the oriented cubic oxide material layer.Jc′s of 2.3×106 A/cm2 have been demonstrated with projected Ic′s of 320 Amperes across a sample 1 cm wide for a superconducting article including a flexible polycrystalline metallic substrate, an inert oxide material layer upon the surface of the flexible polycrystalline metallic substrate, a layer of a crystalline metal oxide or crystalline metal oxynitride material upon the layer of the inert oxide material, a layer of an oriented cubic oxide material having a rock-salt-like structure upon the crystalline metal oxide or crystalline metal oxynitride material layer, a layer of a buffer material upon the oriented cubic oxide material layer, and, a top-layer of a high temperature superconducting material upon the layer of a buffer material.

    摘要翻译： 一种复合衬底结构，包括衬底，结晶金属氧化物层或晶体金属氧氮化物材料层，在结晶金属氧化物或结晶金属氧氮化物材料上具有岩盐状结构的定向立方氧化物材料层 层与诸如一层或多层缓冲材料的附加层一起设置在定向立方氧化物材料层上。 已经证明具有2.3×10 6 /厘米2以上的J C 2以及/ 对于包括柔性多晶金属基底的超导物品，在柔性多晶金属基底的表面上的惰性氧化物材料层，在该层上的结晶金属氧化物或结晶金属氮氧化物材料的层，横跨样品1cm宽的320安培 惰性氧化物材料，在结晶金属氧化物或结晶金属氧氮化物材料层上具有岩盐状结构的定向立方氧化物材料层，定向立方氧化物材料层上的缓冲材料层，以及 在缓冲材料层上的高温超导材料的顶层。