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    Receiver, communication device, and communication method
    1.
    发明授权
    Receiver, communication device, and communication method 有权

    公开(公告)号：US10027313B2

    公开(公告)日：2018-07-17

    申请号：US14820628

    申请日：2015-08-07

    Applicant: Renesas Electronics Corporation

    Inventor： Hirokazu Nagase ,  Koichi Takeda ,  Shunichi Kaeriyama

    IPC: H04L27/06 ,  H03K5/04

    Abstract: To provide a receiver, a communication device, and a communication method capable of restoring a signal transmitted via a non-contact transmission channel with high accuracy. A communication device has a transmission circuit that converts an input signal into a pulse, a non-contact transmission channel that has a primary side coil and a secondary side coil and transmits the pulse from the transmission circuit in a non-contact manner, a restoration circuit that restores the input signal on the basis of a reception signal corresponding to the pulse transmitted via the non-contact transmission channel, an initialization unit that initializes an output of the non-contact transmission channel, and an initialization control unit that outputs a control signal of controlling the initialization unit on the basis of the reception signal corresponding to the pulse received via the non-contact transmission channel.

    Storage device and method for managing storage device
    3.
    发明授权
    Storage device and method for managing storage device 有权

    公开(公告)号：US10109354B2

    公开(公告)日：2018-10-23

    申请号：US15701025

    申请日：2017-09-11

    Applicant: RENESAS ELECTRONICS CORPORATION

    Inventor： Hirokazu Nagase

    IPC: G11C11/34 ,  G11C16/04 ,  G11C16/10 ,  G11C16/32

    Abstract: A storage device includes a plurality of flash memory cells, a controller which writes data into a memory cell which is used as the cell which stores data therein in the plurality of flash memory cells and performs resetting of a threshold voltage of a timer cell used for decision of a threshold voltage of the memory cell in the plurality of flash memory cells and a level decision unit which estimates a state of a second threshold voltage which is the current threshold voltage of the memory cell on the basis of a first threshold voltage which is the current threshold voltage of the timer cell.

    Isolator, semiconductor device, and method for controlling isolator
    4.
    发明授权
    Isolator, semiconductor device, and method for controlling isolator 有权
    隔离器，半导体器件和控制隔离器的方法

    公开(公告)号：US09395402B2

    公开(公告)日：2016-07-19

    申请号：US14745837

    申请日：2015-06-22

    Applicant: Renesas Electronics Corporation

    Inventor： Hirokazu Nagase

    IPC: G01R31/00 ,  G01R31/12 ,  G01R31/02 ,  H03K17/687

    CPC classification number: G01R31/025 ,  G01R31/1263 ,  H03K17/687

    Abstract: An isolator includes: a transmission circuit that generates an alternating current transmission signal in which a first potential is set to be a reference potential; a first insulating element to which the alternating current transmission signal is supplied; a second insulating element that generates an alternating current reception signal in which a second potential is set to be a reference potential by being alternating current-coupled to the first insulating element through an insulating film; a reception circuit that reproduces reception data based on the alternating current reception signal; an impedance control unit that controls an impedance of the first or the second insulating element to be higher than an impedance before the control; and a leakage current detection unit that detects a leakage current flowing between the first and the second insulating elements through the first or the second insulating element in which the impedance has been controlled.

    Abstract translation: 隔离器包括：发送电路，其产生将第一电位设定为基准电位的交流发送信号; 提供交流传输信号的第一绝缘元件; 第二绝缘元件，其通过绝缘膜通过与第一绝缘元件交流耦合而产生其中第二电位被设置为参考电位的交流接收信号; 接收电路，其基于交流接收信号再现接收数据; 阻抗控制单元，其将所述第一绝缘元件或所述第二绝缘元件的阻抗控制为高于所述控制之前的阻抗; 以及泄漏电流检测单元，其通过其中阻抗被控制的第一绝缘元件或第二绝缘元件来检测在第一和第二绝缘元件之间流动的漏电流。

    Receiver, communication device, and communication method
    5.
    发明授权
    Receiver, communication device, and communication method 有权

    公开(公告)号：US10367485B2

    公开(公告)日：2019-07-30

    申请号：US16013430

    申请日：2018-06-20

    Applicant: Renesas Electronics Corporation

    Inventor： Hirokazu Nagase ,  Koichi Takeda ,  Shunichi Kaeriyama

    IPC: H04B5/00 ,  H03K5/04 ,  H03K17/61

    Abstract: To provide a receiver, a communication device, and a communication method capable of restoring a signal transmitted via a non-contact transmission channel with high accuracy. A communication device has a transmission circuit that converts an input signal into a pulse, a non-contact transmission channel that has a primary side coil and a secondary side coil and transmits the pulse from the transmission circuit in a non-contact manner, a restoration circuit that restores the input signal on the basis of a reception signal corresponding to the pulse transmitted via the non-contact transmission channel, an initialization unit that initializes an output of the non-contact transmission channel, and an initialization control unit that outputs a control signal of controlling the initialization unit on the basis of the reception signal corresponding to the pulse received via the non-contact transmission channel.

    Semiconductor device and control method thereof
    6.
    发明授权
    Semiconductor device and control method thereof 有权

    公开(公告)号：US10031870B2

    公开(公告)日：2018-07-24

    申请号：US14992794

    申请日：2016-01-11

    Applicant: Renesas Electronics Corporation

    Inventor： Hirokazu Nagase ,  Shunichi Kaeriyama

    IPC: G06F13/24 ,  G06F13/40

    Abstract: According to one aspect, a module 11_1 includes a communication circuit 111 that performs data communication with an externally-provided control device 12 through a communication bus 13, and an interrupt signal generation circuit 113 that, when an interrupt instruction signal I1 output from the communication circuit 111 becomes an active state, generates an interrupt signal and outputs the generated interrupt signal to the communication bus 13, the interrupt signal being defined by using a bus potential undefined in a data communication standard.

    SEMICONDUCTOR DEVICE AND CONTROL METHOD THEREOF
    8.
    发明申请
    SEMICONDUCTOR DEVICE AND CONTROL METHOD THEREOF 审中-公开
    半导体器件及其控制方法

    公开(公告)号：US20160267029A1

    公开(公告)日：2016-09-15

    申请号：US14992794

    申请日：2016-01-11

    Applicant: Renesas Electronics Corporation

    Inventor： Hirokazu Nagase ,  Shunichi Kaeriyama

    IPC: G06F13/24 ,  G06F13/40

    CPC classification number: G06F13/24 ,  G06F13/4068

    Abstract: According to one aspect, a module 11_1 includes a communication circuit 111 that performs data communication with an externally-provided control device 12 through a communication bus 13, and an interrupt signal generation circuit 113 that, when an interrupt instruction signal I1 output from the communication circuit 111 becomes an active state, generates an interrupt signal and outputs the generated interrupt signal to the communication bus 13, the interrupt signal being defined by using a bus potential undefined in a data communication standard.

    Abstract translation: 根据一个方面，模块11_1包括通过通信总线13与外部提供的控制装置12执行数据通信的通信电路111以及当从通信输出的中断指令信号I1输出的中断信号产生电路113 电路111变为有效状态，产生中断信号并将生成的中断信号输出到通信总线13，中断信号通过使用在数据通信标准中未定义的总线电位来定义。

    Semiconductor memory device having memory cell pairs defining data based on threshold voltages
    9.
    发明授权
    Semiconductor memory device having memory cell pairs defining data based on threshold voltages 有权

    公开(公告)号：US10658031B2

    公开(公告)日：2020-05-19

    申请号：US16112655

    申请日：2018-08-25

    Applicant: Renesas Electronics Corporation

    Inventor： Hirokazu Nagase

    IPC: G11C11/56 ,  G11C16/32 ,  G11C16/34

    Abstract: To provide a semiconductor memory device capable of storing multi-value data while suppressing an increase in the threshold voltage set for a memory cell. A semiconductor memory device according to an embodiment includes a plurality of memory cell pairs, each having a first memory cell and a second memory cell. The first memory cell is configured so as to set at least one threshold voltage, whereas the second memory cell is configured so as to set a plurality of threshold voltages. Data stored in the memory cell pairs is defined using differences between the threshold voltages of the second memory cell and the threshold voltage of the first memory cell.

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