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1.
公开(公告)号:US20240332122A1
公开(公告)日:2024-10-03
申请号:US18739101
申请日:2024-06-10
申请人: ROHM CO., LTD.
IPC分类号: H01L23/373 , H01L23/00 , H01L23/367 , H01L23/495 , H01L23/498 , H01L25/00 , H01L25/11 , H01L25/18 , H01L29/16 , H01L29/739 , H01L29/78
CPC分类号: H01L23/3735 , H01L23/3675 , H01L23/373 , H01L23/4952 , H01L23/49541 , H01L23/49838 , H01L23/49861 , H01L24/48 , H01L25/115 , H01L25/18 , H01L25/50 , H01L23/49811 , H01L23/49877 , H01L24/32 , H01L24/33 , H01L24/40 , H01L24/73 , H01L29/1608 , H01L29/7395 , H01L29/7397 , H01L29/7802 , H01L29/7804 , H01L29/7805 , H01L29/7813 , H01L2224/0603 , H01L2224/29139 , H01L2224/32245 , H01L2224/33181 , H01L2224/40225 , H01L2224/40245 , H01L2224/45124 , H01L2224/45147 , H01L2224/48091 , H01L2224/48106 , H01L2224/48247 , H01L2224/73221 , H01L2224/73263 , H01L2224/73265 , H01L2924/10272 , H01L2924/1203 , H01L2924/13055 , H01L2924/13091 , H01L2924/19107
摘要: A power module (PM) includes: an insulating substrate; a semiconductor device disposed on the insulating substrate, the semiconductor device including electrodes on a front surface side and a back surface side thereof; and a graphite plate having an anisotropic thermal conductivity, the graphite plate of which one end is connected to the front surface side of the semiconductor device and the other end is connected to the insulating substrate, wherein heat of the front surface side of the semiconductor device is transferred to the insulating substrate through the graphite plate. There is provide an inexpensive power module capable of reducing a stress and capable of exhibiting cooling performance not inferior to that of the double-sided cooling structures.
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公开(公告)号:US20200035656A1
公开(公告)日:2020-01-30
申请号:US16591183
申请日:2019-10-02
申请人: ROHM CO., LTD.
发明人: Tatsuya MIYAZAKI , Hirotaka OTAKE
IPC分类号: H01L25/16 , H01L23/00 , H02M7/5387 , H02M1/08 , H02M7/00
摘要: Power module includes: first transistors Q1, Q4 forming at least one half bridge, and disposed at upper and lower arms thereof; second transistors QM1, QM4 of which drains are respectively connected to gates G1 and G4 sides of the first transistors, and sources are respectively connected to the sources S1, S4 sides thereof; source signal wiring patterns SSP1, SSP4 respectively connected to the sources S1, S4 of the first transistors; first connected conductors MSW1, MSW4 for respectively connecting between the source signal wiring patterns and the sources of the second transistors; second gate signal wiring patterns MGP1, MGP4 respectively connected to gates MG1, MG4 of the second transistors; and second connected conductors MGW1, MGW4 for respectively connecting between the gate signal wiring patterns and the gates of the second transistors. Lengths of the first connection conductors are respectively equal to or shorter than lengths of the second connection conductors.
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公开(公告)号:US20230146758A1
公开(公告)日:2023-05-11
申请号:US17914713
申请日:2021-03-17
申请人: ROHM CO., LTD.
发明人: Tatsuya MIYAZAKI
IPC分类号: H01L23/498 , H01L25/16 , H01L23/00 , H01L23/495
CPC分类号: H01L23/49811 , H01L25/16 , H01L24/40 , H01L23/495 , H01L24/48 , H01L2224/48227 , H01L24/73 , H01L2224/73221 , H01L2224/40227 , H01L23/5386
摘要: A semiconductor device includes at least one semiconductor element having a switching function; a conductive member that forms a path of a current switched by the semiconductor element, and that is made of a first material; and a covering layer that covers at least a portion of the conductive member, and that is made of a second material. The second material satisfies at least one of the following three requirements: (a) having a magnetic permeability higher than the first material; (b) having an electrical resistivity higher than the first material; and (c) having a dielectric loss tangent larger than zero.
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公开(公告)号:US20230132511A1
公开(公告)日:2023-05-04
申请号:US17910460
申请日:2021-03-15
申请人: ROHM CO., LTD.
IPC分类号: H01L29/66 , H01L29/78 , H01L29/778 , H01L29/08
摘要: A semiconductor device includes a first and a second switching element, a first and a second conductive member, and a capacitor. The first switching element has a first element obverse surface and a first element reverse surface facing away from each other in a first direction. The second switching element has a second element obverse surface and a second element reverse surface facing away from each other in the first direction. The first and second conductive members are spaced apart in a second direction orthogonal to the first direction. The capacitor has a first and a second connection terminal. The first and second switching elements are connected in series, forming a bridge. The first and second connection terminals are electrically connected to opposite ends of the bridge. The capacitor and the first switching element are on the first conductive member, the second switching element on the second conductive member.
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5.
公开(公告)号:US20220310479A1
公开(公告)日:2022-09-29
申请号:US17746760
申请日:2022-05-17
申请人: ROHM CO., LTD.
IPC分类号: H01L23/373 , H01L23/367 , H01L23/495 , H01L23/00 , H01L25/11 , H01L25/00 , H01L23/498 , H01L25/18
摘要: A power module (PM) includes: an insulating substrate; a semiconductor device disposed on the insulating substrate, the semiconductor device including electrodes on a front surface side and a back surface side thereof; and a graphite plate having an anisotropic thermal conductivity, the graphite plate of which one end is connected to the front surface side of the semiconductor device and the other end is connected to the insulating substrate, wherein heat of the front surface side of the semiconductor device is transferred to the insulating substrate through the graphite plate. There is provide an inexpensive power module capable of reducing a stress and capable of exhibiting cooling performance not inferior to that of the double-sided cooling structures.
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公开(公告)号:US20220021299A1
公开(公告)日:2022-01-20
申请号:US17294112
申请日:2019-11-29
申请人: Rohm Co., Ltd.
IPC分类号: H02M1/42 , H02M7/162 , H02M1/00 , H02M3/335 , H02M7/5395
摘要: A control device 100 is used as a principle controller of an electric power conversion device 1 having a switch circuit 10 including transistors M1-M4. The control device: subtracts, from a reference signal REF set in accordance with an operating mode MODE (PFC/INV) of the electric power conversion device 1, a product signal (K×I) obtained by multiplying an object-of-control electric current I of the switch circuit 10 by a prescribed coefficient K; and generates, on the basis of the computation result (=REF−K×I), control signals S1-S4 (and consequently, gate signals G1-G4) for the transistors M1-M4.
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公开(公告)号:US20210234474A1
公开(公告)日:2021-07-29
申请号:US16967552
申请日:2018-11-14
申请人: ROHM CO., LTD.
发明人: Hirotaka OTAKE , Tatsuya MIYAZAKI , Mamoru TSURUYA
IPC分类号: H02M7/487 , H02M1/42 , H02M7/5395
摘要: AC power supply device 1 includes input capacitors 11 and 12 connected at a neutral point X of a three-phase output, transistor bridges 20* (where * denotes U, V, and/or W) each consisting of PWM control badges 20*1 and 20*2 each including two switch elements, transformers T* connected to output terminals of the transistor bridges 20*, reactors Ls* connected to the transformers T*, smoothing capacitors 40* connected to the reactors Ls*. The transformers T* are autotransformers including a core 33* and windings 31* and 32* coupled with each other via the core 33*. One ends of the windings are connected to output terminals of the PWM control bridges 20*1 and 20*2, respectively, while the other terminals are connected to the reactors Ls*. The windings 31* and 32* are wound in such directions that magnetic fluxes generated in the core 33* are cancelled with each other.
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公开(公告)号:US20230360838A1
公开(公告)日:2023-11-09
申请号:US18246501
申请日:2021-09-06
申请人: ROHM CO., LTD.
发明人: Tatsuya MIYAZAKI , Yuta OKAWAUCHI
IPC分类号: H01F27/255 , H01L25/16 , H01F37/00 , H01F27/28
CPC分类号: H01F27/255 , H01L25/16 , H01F37/00 , H01F27/2804 , H01F2027/2809
摘要: A circuit component includes a resin composite body and a conductor. The resin composite body is composed of a resin material and a plurality of magnetic particles contained in the resin material. The conductor is formed on the surface of the resin composite body. The magnetic particles are dispersed in the resin material.
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9.
公开(公告)号:US20180145007A1
公开(公告)日:2018-05-24
申请号:US15813929
申请日:2017-11-15
申请人: ROHM CO., LTD.
IPC分类号: H01L23/373 , H01L23/498 , H01L23/367 , H01L23/495 , H01L23/00 , H01L25/11 , H01L25/00 , H01L25/18
CPC分类号: H01L23/3735 , H01L23/3675 , H01L23/373 , H01L23/4952 , H01L23/49541 , H01L23/49811 , H01L23/49838 , H01L23/49861 , H01L23/49877 , H01L24/32 , H01L24/33 , H01L24/40 , H01L24/48 , H01L24/73 , H01L25/115 , H01L25/18 , H01L25/50 , H01L29/1608 , H01L29/7395 , H01L29/7397 , H01L29/7802 , H01L29/7804 , H01L29/7805 , H01L29/7813 , H01L2224/0603 , H01L2224/29139 , H01L2224/32245 , H01L2224/33181 , H01L2224/40225 , H01L2224/40245 , H01L2224/45124 , H01L2224/45147 , H01L2224/48091 , H01L2224/48106 , H01L2224/48247 , H01L2224/73221 , H01L2224/73263 , H01L2224/73265 , H01L2924/10272 , H01L2924/1203 , H01L2924/13055 , H01L2924/13091 , H01L2924/19107 , H01L2924/00
摘要: A power module (PM) includes: an insulating substrate; a semiconductor device disposed on the insulating substrate, the semiconductor device including electrodes on a front surface side and a back surface side thereof; and a graphite plate having an anisotropic thermal conductivity, the graphite plate of which one end is connected to the front surface side of the semiconductor device and the other end is connected to the insulating substrate, wherein heat of the front surface side of the semiconductor device is transferred to the insulating substrate through the graphite plate. There is provide an inexpensive power module capable of reducing a stress and capable of exhibiting cooling performance not inferior to that of the double-sided cooling structures.
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