公开(公告)号：US11552629B1

公开(公告)日：2023-01-10

申请号：US17349576

申请日：2021-06-16

Applicant: RENESAS ELECTRONICS CORPORATION

Inventor： Hiroki Nagatomi ,  Makoto Tanaka

IPC: H03K17/14 ,  H01L27/07 ,  H01L23/34 ,  G01K7/01

Abstract: A semiconductor device includes a first transistor that flows a current to a load, a current generation circuit that outputs a current corresponding to a power consumption of the first transistor, a temperature sensor, a resistor-capacitor network coupled between the current generation circuit and the temperature sensor and an overheat detection circuit coupled to a connection point of the current generation circuit and the resistor-capacitor network, wherein the resistor-capacitor network comprises a resistor and a capacitor corresponding to a thermal resistance and a thermal capacitance between the first transistor and the temperature sensor.

公开(公告)号：US11289437B1

公开(公告)日：2022-03-29

申请号：US17082766

申请日：2020-10-28

Applicant: RENESAS ELECTRONICS CORPORATION

Inventor： Tomoaki Ota ,  Makoto Tanaka

IPC: H01L23/00

Abstract: A semiconductor device includes a power MOS chip having a source electrode on a surface and a control chip mounted on a portion of the power MOS chip, wherein, viewing from a first outer edge of the power MOS chip extending in a first direction to the control chip, a first column bonding pad and a second column bonding pad are formed in a region of the source electrode where the control chip is not mounted, and wherein a distance between a second outer edge of the power MOS chip extending in a second direction and the first column bonding pad is longer than a distance between the second outer edge and the second column bonding pad.

公开(公告)号：US10298153B2

公开(公告)日：2019-05-21

申请号：US15656864

申请日：2017-07-21

Applicant: Renesas Electronics Corporation

Inventor： Naohiro Yoshimura ,  Akihiro Nakahara ,  Makoto Tanaka

IPC: H02P1/02 ,  H02P29/20 ,  G01R31/02

Abstract: Provided are an input buffer, a semiconductor device and an engine control unit making it possible to execute fault diagnosis in real time. The input buffer includes a first comparator which compares a voltage of an input signal with a first reference voltage, a hysteresis circuit which generates a first high voltage side or low voltage side reference voltage on the basis of a comparison result from the first comparator, a second comparator which compares the voltage of the input signal with a second reference voltage, and a hysteresis circuit which outputs a second high voltage side reference voltage which is higher than the first high voltage side reference voltage or a second low voltage side reference voltage which is lower than the first low voltage side reference voltage.

公开(公告)号：US09627527B2

公开(公告)日：2017-04-18

申请号：US15071789

申请日：2016-03-16

Applicant: Renesas Electronics Corporation

Inventor： Akio Tamagawa ,  Makoto Tanaka

IPC: H01L29/78 ,  H01L29/06 ,  H01L27/088 ,  H01L21/8234 ,  H01L23/00 ,  H01L25/18 ,  H01L29/08 ,  H01L29/10 ,  H01L29/417 ,  H01L29/423

CPC classification number: H01L29/7813 ,  H01L21/823481 ,  H01L24/45 ,  H01L24/48 ,  H01L24/49 ,  H01L25/18 ,  H01L27/088 ,  H01L29/0615 ,  H01L29/0646 ,  H01L29/086 ,  H01L29/0865 ,  H01L29/0878 ,  H01L29/0882 ,  H01L29/1095 ,  H01L29/41741 ,  H01L29/4236 ,  H01L29/7811 ,  H01L2224/45124 ,  H01L2224/48137 ,  H01L2224/49175 ,  H01L2224/73265 ,  H01L2924/00014 ,  H01L2924/13091 ,  H01L2924/00 ,  H01L2224/45099

Abstract: In a semiconductor device, a lightly doped second semiconductor layer of a first conductive type is joined with a heavily doped first semiconductor layer of the first conductive type. A power transistor having a first conductive type channel and a transistor are formed in surface regions of the second semiconductor layer, respectively. A first diffusion layer of a second conductive type is formed in a surface region of the second semiconductor layer to provide a boundary between the power transistor and the transistor. The first semiconductor layer functions as a drain of the power transistor. The first diffusion layer region is set to the same voltage as that of the drain.

公开(公告)号：US09537303B2

公开(公告)日：2017-01-03

申请号：US14137791

申请日：2013-12-20

Applicant: Renesas Electronics Corporation

Inventor： Makoto Tanaka ,  Akihiro Nakahara

IPC: G05F1/00 ,  H02H9/02 ,  H03K17/082

CPC classification number: H02H9/025 ,  H03K17/0822

Abstract: A semiconductor device includes: an output transistor; and a current detection section. The output transistor controls electric power supply from an electric power source to a load. The current detection section detects a current flowing through the output transistor. The current detection section has a current detection characteristic in which a current detection value has approximately linier and negative dependence on a drain-source voltage of the output transistor.

Abstract translation: 一种半导体器件包括：输出晶体管; 和电流检测部。 输出晶体管控制从电源到负载的电力供应。 电流检测部检测流过输出晶体管的电流。 电流检测部具有电流检测特性，其中电流检测值对输出晶体管的漏极 - 源极电压具有大致的依赖性和负相关性。

公开(公告)号：US10031164B2

公开(公告)日：2018-07-24

申请号：US15271537

申请日：2016-09-21

Applicant: RENESAS ELECTRONICS CORPORATION

Inventor： Keita Takada ,  Nobuya Koike ,  Akihiro Nakahara ,  Makoto Tanaka

IPC: G01R1/30 ,  G01R17/16 ,  G01R19/00 ,  H01L23/535 ,  H01L27/088 ,  H01L29/08 ,  H01L29/417 ,  H01L29/78 ,  H01L27/02 ,  H01L21/8234

Abstract: A power MOSFET and a sense MOSFET for detecting a current of the power MOSFET are formed in a semiconductor chip, and a source pad and a Kelvin pad are formed of a source electrode for the power MOSFET. The source pad is a pad for outputting the current flowing to the power MOSFET, and the Kelvin pad is a pad for detecting a source potential of the power MOSFET. The source electrode has a slit, and at least a part of the slit is arranged between the source pad and the Kelvin pad when seen in a plan view.

公开(公告)号：US20140184183A1

公开(公告)日：2014-07-03

申请号：US14137791

申请日：2013-12-20

Applicant: Renesas Electronics Corporation

Inventor： Makoto Tanaka ,  Akihiro Nakahara

IPC: H02H9/02

CPC classification number: H02H9/025 ,  H03K17/0822

Abstract: A semiconductor device includes: an output transistor; and a current detection section. The output transistor controls electric power supply from an electric power source to a load. The current detection section detects a current flowing through the output transistor. The current detection section has a current detection characteristic in which a current detection value has approximately linier and negative dependence on a drain-source voltage of the output transistor.

Abstract translation: 一种半导体器件包括：输出晶体管; 和电流检测部。 输出晶体管控制从电源到负载的电力供应。 电流检测部检测流过输出晶体管的电流。 电流检测部具有电流检测特性，其中电流检测值对输出晶体管的漏极 - 源极电压具有大致的依赖性和负相关性。

公开(公告)号：US11799468B2

公开(公告)日：2023-10-24

申请号：US17942259

申请日：2022-09-12

Applicant: Renesas Electronics Corporation

Inventor： Naohiro Yoshimura ,  Makoto Tanaka

IPC: H02H9/04 ,  H03K17/082 ,  H03K17/687 ,  H02H9/02 ,  H02M3/158

CPC classification number: H03K17/0822 ,  H02H9/02 ,  H02H9/041 ,  H02M3/158 ,  H03K17/687 ,  H03K2217/0063

Abstract: Detection transistor MNd flows a detection current IdN to a current path CP1n when an output voltage Vo generated in a load terminal PN1 is than a ground voltage GND. A current mirror circuit CMp1 transfers the detection current IdN flowing in the current path CP1n to a current path CP2a. Detecting resistor element Rd1 converts a mirror current I2a flowing in the current path CP2a to a detection voltage Vd1. A control transistor MNc1 is turned on when the converted detection voltage Vd1 is higher than a predetermined value. Then, the output transistor QO is controlled to be off while the control transistor MNc1 is on.

公开(公告)号：US11824524B2

公开(公告)日：2023-11-21

申请号：US17708862

申请日：2022-03-30

Applicant: RENESAS ELECTRONICS CORPORATION

Inventor： Hiroki Nagatomi ,  Makoto Tanaka

IPC: H03K17/14 ,  G01K7/01 ,  G05F3/26 ,  H03K17/06 ,  H03F3/45 ,  B60R16/02

CPC classification number: H03K17/145 ,  B60R16/0207 ,  G01K7/01 ,  G05F3/26 ,  H03F3/45 ,  H03K17/063

Abstract: A semiconductor device includes a first transistor that flows a load current to an external load; a current generation circuit that outputs a current corresponding to a power consumption generated in an overheat detection target when the load current flows the overheat detection target; a resistor-capacitor-network comprising a resistor and a capacitor corresponding to a thermal resistance and a thermal capacitance of the overheat detection target, and having one end coupled to the current generation circuit; an overheat detection circuit coupled to a connection point of the current generation circuit and the resistor-capacitor-network; and a voltage source that sets a voltage of the connection point of the current generation circuit and the resistor-capacitor-network to a predetermined voltage.

公开(公告)号：US20160311327A1

公开(公告)日：2016-10-27

申请号：US15096107

申请日：2016-04-11

Applicant: Renesas Electronics Corporation

Inventor： Akihiro NAKAHARA ,  Makoto Tanaka

IPC: B60L11/18 ,  H03K17/082

CPC classification number: H03K17/0822 ,  B60L50/50 ,  H03K17/74 ,  Y02T10/142

Abstract: According to one embodiment, a switching control circuit (CTL1) includes a Zener diode (D1) that, when a voltage between a drain (Dr1) and a source (Sr1) of an output transistor (T1) that controls a current flowing through a load (4) exceeds a specified value (Vc1), allows continuity between the drain (Dr1) and the source (Sr1) of the output transistor (T1), and a current mirror circuit that, when a current flows through the Zener diode (D1), allows continuity between the drain (Dr1) and a gate (Gt1) of the output transistor (T1).

Abstract translation: 根据一个实施例，开关控制电路（CTL1）包括齐纳二极管（D1），当在漏极（Dr1）和输出晶体管（T1）的源极（Sr1）之间的电压控制流过 负载（4）超过规定值（Vc1），允许输出晶体管（T1）的漏极（Dr1）和源极（Sr1）之间的导通性，以及当电流流过齐纳二极管 D1）允许漏极（Dr1）和输出晶体管（T1）的栅极（Gt1）之间的导通。