公开(公告)号：US09997620B2

公开(公告)日：2018-06-12

申请号：US15621651

申请日：2017-06-13

Applicant: Renesas Electronics Corporation

Inventor： Akira Muto ,  Nobuya Koike ,  Masaki Kotsuji ,  Yukihiro Narita

IPC: H01L29/739 ,  H01L29/78 ,  H01L23/495 ,  H01L23/00 ,  H01L23/538 ,  H01L29/66 ,  H01L21/48 ,  H01L23/552

CPC classification number: H01L29/7393 ,  H01L21/4842 ,  H01L23/49537 ,  H01L23/49541 ,  H01L23/49551 ,  H01L23/49562 ,  H01L23/49575 ,  H01L23/538 ,  H01L23/552 ,  H01L24/36 ,  H01L24/37 ,  H01L24/40 ,  H01L29/66348 ,  H01L29/7397 ,  H01L29/7805 ,  H01L29/7813 ,  H01L2224/32245 ,  H01L2224/37011 ,  H01L2224/371 ,  H01L2224/37147 ,  H01L2224/40095 ,  H01L2224/40137 ,  H01L2224/40139 ,  H01L2224/40245 ,  H01L2224/83801 ,  H01L2224/8385 ,  H01L2224/84801 ,  H01L2224/8485 ,  H01L2924/12036 ,  H01L2924/12041 ,  H01L2924/12042 ,  H01L2924/1305 ,  H01L2924/13055 ,  H01L2924/13091 ,  H01L2924/181 ,  H01L2924/00 ,  H01L2924/00012 ,  H01L2924/00014

Abstract: A semiconductor device and an electronic device are improved in performances by supporting a large current. An emitter terminal protrudes from a first side of a sealing body, and signal terminals protrude from a second sides of the sealing body. Namely, the side of the sealing body from which the emitter terminal protrudes and the side of the sealing body from which the signal terminals protrude are different. More particularly, the signal terminals protrude from the side of the sealing body opposite the side thereof from which the emitter terminal protrudes. Further, a second semiconductor chip including a diode formed therein is mounted over a first surface of a chip mounting portion in such a manner as to be situated between the emitter terminal and the a first semiconductor chip including an IGBT formed therein in plan view.

公开(公告)号：US20130256860A1

公开(公告)日：2013-10-03

申请号：US13771235

申请日：2013-02-20

Applicant: RENESAS ELECTRONICS CORPORATION

Inventor： Yukihiro Sato ,  Nobuya Koike

IPC: H01L23/495 ,  H01L21/58

CPC classification number: H01L21/561 ,  H01L23/3107 ,  H01L23/4334 ,  H01L23/49503 ,  H01L23/49517 ,  H01L23/49541 ,  H01L23/49575 ,  H01L24/24 ,  H01L24/32 ,  H01L24/45 ,  H01L24/48 ,  H01L24/49 ,  H01L24/85 ,  H01L24/92 ,  H01L25/0657 ,  H01L2224/05554 ,  H01L2224/291 ,  H01L2224/32245 ,  H01L2224/451 ,  H01L2224/45124 ,  H01L2224/45144 ,  H01L2224/45147 ,  H01L2224/48091 ,  H01L2224/48145 ,  H01L2224/48245 ,  H01L2224/48247 ,  H01L2224/48463 ,  H01L2224/49171 ,  H01L2224/49175 ,  H01L2224/49177 ,  H01L2224/73265 ,  H01L2224/85181 ,  H01L2224/85205 ,  H01L2224/92247 ,  H01L2225/06506 ,  H01L2225/0651 ,  H01L2924/10162 ,  H01L2924/12042 ,  H01L2924/1305 ,  H01L2924/1306 ,  H01L2924/13091 ,  H01L2924/181 ,  H01L2924/386 ,  H01L2924/00012 ,  H01L2924/014 ,  H01L2924/00014 ,  H01L2924/00

Abstract: There is provided a technology enabling the improvement of the reliability of a semiconductor device manufactured by physically fixing separately formed chip mounting portion and lead frame. A feature of an embodiment resides in that, a second junction portion formed in a suspension lead is fitted into a first junction portion formed in a chip mounting portion, thereby to physically fix the chip mounting portion and the suspension lead. Specifically, the first junction portion is formed of a concave part disposed in the surface of the chip mounting portion. The second junction portion forms a part of the suspension lead.

公开(公告)号：US09704979B2

公开(公告)日：2017-07-11

申请号：US14287085

申请日：2014-05-26

Applicant: Renesas Electronics Corporation

Inventor： Akira Muto ,  Nobuya Koike ,  Masaki Kotsuji ,  Yukihiro Narita

IPC: H01L29/739 ,  H01L23/538 ,  H01L23/495 ,  H01L23/00 ,  H01L29/78 ,  H01L21/48 ,  H01L23/552

CPC classification number: H01L29/7393 ,  H01L21/4842 ,  H01L23/49537 ,  H01L23/49541 ,  H01L23/49551 ,  H01L23/49562 ,  H01L23/49575 ,  H01L23/538 ,  H01L23/552 ,  H01L24/36 ,  H01L24/37 ,  H01L24/40 ,  H01L29/66348 ,  H01L29/7397 ,  H01L29/7805 ,  H01L29/7813 ,  H01L2224/32245 ,  H01L2224/37011 ,  H01L2224/371 ,  H01L2224/37147 ,  H01L2224/40095 ,  H01L2224/40137 ,  H01L2224/40139 ,  H01L2224/40245 ,  H01L2224/83801 ,  H01L2224/8385 ,  H01L2224/84801 ,  H01L2224/8485 ,  H01L2924/12036 ,  H01L2924/12041 ,  H01L2924/12042 ,  H01L2924/1305 ,  H01L2924/13055 ,  H01L2924/13091 ,  H01L2924/181 ,  H01L2924/00 ,  H01L2924/00012 ,  H01L2924/00014

Abstract: A semiconductor device and an electronic device are improved in performances by supporting a large current. An emitter terminal protrudes from a first side of a sealing body, and signal terminals protrude from a second sides of the sealing body. Namely, the side of the sealing body from which the emitter terminal protrudes and the side of the sealing body from which the signal terminals protrude are different. More particularly, the signal terminals protrude from the side of the sealing body opposite the side thereof from which the emitter terminal protrudes. Further, a second semiconductor chip including a diode formed therein is mounted over a first surface of a chip mounting portion in such a manner as to be situated between the emitter terminal and the a first semiconductor chip including an IGBT formed therein in plan view.

公开(公告)号：US09396971B2

公开(公告)日：2016-07-19

申请号：US14805218

申请日：2015-07-21

Applicant: RENESAS ELECTRONICS CORPORATION

Inventor： Yukihiro Sato ,  Nobuya Koike

IPC: H01L23/495 ,  H01L21/56 ,  H01L21/58 ,  H01L23/31 ,  H01L23/00 ,  H01L23/433 ,  H01L25/065

CPC classification number: H01L21/561 ,  H01L23/3107 ,  H01L23/4334 ,  H01L23/49503 ,  H01L23/49517 ,  H01L23/49541 ,  H01L23/49575 ,  H01L24/24 ,  H01L24/32 ,  H01L24/45 ,  H01L24/48 ,  H01L24/49 ,  H01L24/85 ,  H01L24/92 ,  H01L25/0657 ,  H01L2224/05554 ,  H01L2224/291 ,  H01L2224/32245 ,  H01L2224/451 ,  H01L2224/45124 ,  H01L2224/45144 ,  H01L2224/45147 ,  H01L2224/48091 ,  H01L2224/48145 ,  H01L2224/48245 ,  H01L2224/48247 ,  H01L2224/48463 ,  H01L2224/49171 ,  H01L2224/49175 ,  H01L2224/49177 ,  H01L2224/73265 ,  H01L2224/85181 ,  H01L2224/85205 ,  H01L2224/92247 ,  H01L2225/06506 ,  H01L2225/0651 ,  H01L2924/10162 ,  H01L2924/12042 ,  H01L2924/1305 ,  H01L2924/1306 ,  H01L2924/13091 ,  H01L2924/181 ,  H01L2924/386 ,  H01L2924/00012 ,  H01L2924/014 ,  H01L2924/00014 ,  H01L2924/00

Abstract: There is provided a technology enabling the improvement of the reliability of a semiconductor device manufactured by physically fixing separately formed chip mounting portion and lead frame. A feature of an embodiment resides in that, a second junction portion formed in a suspension lead is fitted into a first junction portion formed in a chip mounting portion, thereby to physically fix the chip mounting portion and the suspension lead. Specifically, the first junction portion is formed of a concave part disposed in the surface of the chip mounting portion. The second junction portion forms a part of the suspension lead.

公开(公告)号：US20180261690A1

公开(公告)日：2018-09-13

申请号：US15977556

申请日：2018-05-11

Applicant: Renesas Electronics Corporation

Inventor： Akira Muto ,  Nobuya Koike ,  Masaki Kotsuji ,  Yukihiro Narita

IPC: H01L29/739 ,  H01L29/66 ,  H01L23/538 ,  H01L23/00

Abstract: A semiconductor device and an electronic device are improved in performances by supporting a large current. An emitter terminal protrudes from a first side of a sealing body, and signal terminals protrude from a second sides of the sealing body. Namely, the side of the sealing body from which the emitter terminal protrudes and the side of the sealing body from which the signal terminals protrude are different. More particularly, the signal terminals protrude from the side of the sealing body opposite the side thereof from which the emitter terminal protrudes. Further, a second semiconductor chip including a diode formed therein is mounted over a first surface of a chip mounting portion in such a manner as to be situated between the emitter terminal and the a first semiconductor chip including an IGBT formed therein in plan view.

公开(公告)号：US10031164B2

公开(公告)日：2018-07-24

申请号：US15271537

申请日：2016-09-21

Applicant: RENESAS ELECTRONICS CORPORATION

Inventor： Keita Takada ,  Nobuya Koike ,  Akihiro Nakahara ,  Makoto Tanaka

IPC: G01R1/30 ,  G01R17/16 ,  G01R19/00 ,  H01L23/535 ,  H01L27/088 ,  H01L29/08 ,  H01L29/417 ,  H01L29/78 ,  H01L27/02 ,  H01L21/8234

Abstract: A power MOSFET and a sense MOSFET for detecting a current of the power MOSFET are formed in a semiconductor chip, and a source pad and a Kelvin pad are formed of a source electrode for the power MOSFET. The source pad is a pad for outputting the current flowing to the power MOSFET, and the Kelvin pad is a pad for detecting a source potential of the power MOSFET. The source electrode has a slit, and at least a part of the slit is arranged between the source pad and the Kelvin pad when seen in a plan view.

公开(公告)号：US09230831B2

公开(公告)日：2016-01-05

申请号：US14613179

申请日：2015-02-03

Applicant: RENESAS ELECTRONICS CORPORATION

Inventor： Yukihiro Sato ,  Nobuya Koike

IPC: H01L21/44 ,  H01L21/48 ,  H01L21/56 ,  H01L23/495 ,  H01L21/58 ,  H01L23/00 ,  H01L23/433 ,  H01L25/065

CPC classification number: H01L21/561 ,  H01L23/3107 ,  H01L23/4334 ,  H01L23/49503 ,  H01L23/49517 ,  H01L23/49541 ,  H01L23/49575 ,  H01L24/24 ,  H01L24/32 ,  H01L24/45 ,  H01L24/48 ,  H01L24/49 ,  H01L24/85 ,  H01L24/92 ,  H01L25/0657 ,  H01L2224/05554 ,  H01L2224/291 ,  H01L2224/32245 ,  H01L2224/451 ,  H01L2224/45124 ,  H01L2224/45144 ,  H01L2224/45147 ,  H01L2224/48091 ,  H01L2224/48145 ,  H01L2224/48245 ,  H01L2224/48247 ,  H01L2224/48463 ,  H01L2224/49171 ,  H01L2224/49175 ,  H01L2224/49177 ,  H01L2224/73265 ,  H01L2224/85181 ,  H01L2224/85205 ,  H01L2224/92247 ,  H01L2225/06506 ,  H01L2225/0651 ,  H01L2924/10162 ,  H01L2924/12042 ,  H01L2924/1305 ,  H01L2924/1306 ,  H01L2924/13091 ,  H01L2924/181 ,  H01L2924/386 ,  H01L2924/00012 ,  H01L2924/014 ,  H01L2924/00014 ,  H01L2924/00

Abstract: There is provided a technology enabling the improvement of the reliability of a semiconductor device manufactured by physically fixing separately formed chip mounting portion and lead frame. A feature of an embodiment resides in that, a second junction portion formed in a suspension lead is fitted into a first junction portion formed in a chip mounting portion, thereby to physically fix the chip mounting portion and the suspension lead. Specifically, the first junction portion is formed of a concave part disposed in the surface of the chip mounting portion. The second junction portion forms a part of the suspension lead.

公开(公告)号：US08975733B2

公开(公告)日：2015-03-10

申请号：US13771235

申请日：2013-02-20

Applicant: Renesas Electronics Corporation

Inventor： Yukihiro Sato ,  Nobuya Koike

IPC: H01L23/495 ,  H01L21/58 ,  H01L23/00 ,  H01L23/433 ,  H01L25/065

CPC classification number: H01L21/561 ,  H01L23/3107 ,  H01L23/4334 ,  H01L23/49503 ,  H01L23/49517 ,  H01L23/49541 ,  H01L23/49575 ,  H01L24/24 ,  H01L24/32 ,  H01L24/45 ,  H01L24/48 ,  H01L24/49 ,  H01L24/85 ,  H01L24/92 ,  H01L25/0657 ,  H01L2224/05554 ,  H01L2224/291 ,  H01L2224/32245 ,  H01L2224/451 ,  H01L2224/45124 ,  H01L2224/45144 ,  H01L2224/45147 ,  H01L2224/48091 ,  H01L2224/48145 ,  H01L2224/48245 ,  H01L2224/48247 ,  H01L2224/48463 ,  H01L2224/49171 ,  H01L2224/49175 ,  H01L2224/49177 ,  H01L2224/73265 ,  H01L2224/85181 ,  H01L2224/85205 ,  H01L2224/92247 ,  H01L2225/06506 ,  H01L2225/0651 ,  H01L2924/10162 ,  H01L2924/12042 ,  H01L2924/1305 ,  H01L2924/1306 ,  H01L2924/13091 ,  H01L2924/181 ,  H01L2924/386 ,  H01L2924/00012 ,  H01L2924/014 ,  H01L2924/00014 ,  H01L2924/00

Abstract: There is provided a technology enabling the improvement of the reliability of a semiconductor device manufactured by physically fixing separately formed chip mounting portion and lead frame. A feature of an embodiment resides in that, a second junction portion formed in a suspension lead is fitted into a first junction portion formed in a chip mounting portion, thereby to physically fix the chip mounting portion and the suspension lead. Specifically, the first junction portion is formed of a concave part disposed in the surface of the chip mounting portion. The second junction portion forms a part of the suspension lead.

Abstract translation: 提供了一种能够提高通过物理地固定单独形成的芯片安装部分和引线框而制造的半导体器件的可靠性的技术。 实施例的特征在于，形成在悬挂引线中的第二接合部嵌入到形成在芯片安装部分中的第一接合部分中，从而物理地固定芯片安装部分和悬架引线。 具体而言，第一接合部由设置在芯片安装部的表面的凹部形成。 第二接合部分形成悬挂引线的一部分。

公开(公告)号：US10453946B2

公开(公告)日：2019-10-22

申请号：US15977556

申请日：2018-05-11

Applicant: Renesas Electronics Corporation

Inventor： Akira Muto ,  Nobuya Koike ,  Masaki Kotsuji ,  Yukihiro Narita

IPC: H01L29/739 ,  H01L23/538 ,  H01L23/495 ,  H01L23/00 ,  H01L29/78 ,  H01L29/66 ,  H01L21/48 ,  H01L23/552

Abstract: A semiconductor device and an electronic device are improved in performances by supporting a large current. An emitter terminal protrudes from a first side of a sealing body, and signal terminals protrude from a second sides of the sealing body. Namely, the side of the sealing body from which the emitter terminal protrudes and the side of the sealing body from which the signal terminals protrude are different. More particularly, the signal terminals protrude from the side of the sealing body opposite the side thereof from which the emitter terminal protrudes. Further, a second semiconductor chip including a diode formed therein is mounted over a first surface of a chip mounting portion in such a manner as to be situated between the emitter terminal and the a first semiconductor chip including an IGBT formed therein in plan view.

公开(公告)号：US20170287818A1

公开(公告)日：2017-10-05

申请号：US15621651

申请日：2017-06-13

Applicant: Renesas Electronics Corporation

Inventor： Akira Muto ,  Nobuya Koike ,  Masaki Kotsuji ,  Yukihiro Narita

IPC: H01L23/495

CPC classification number: H01L29/7393 ,  H01L21/4842 ,  H01L23/49537 ,  H01L23/49541 ,  H01L23/49551 ,  H01L23/49562 ,  H01L23/49575 ,  H01L23/538 ,  H01L23/552 ,  H01L24/36 ,  H01L24/37 ,  H01L24/40 ,  H01L29/66348 ,  H01L29/7397 ,  H01L29/7805 ,  H01L29/7813 ,  H01L2224/32245 ,  H01L2224/37011 ,  H01L2224/371 ,  H01L2224/37147 ,  H01L2224/40095 ,  H01L2224/40137 ,  H01L2224/40139 ,  H01L2224/40245 ,  H01L2224/83801 ,  H01L2224/8385 ,  H01L2224/84801 ,  H01L2224/8485 ,  H01L2924/12036 ,  H01L2924/12041 ,  H01L2924/12042 ,  H01L2924/1305 ,  H01L2924/13055 ,  H01L2924/13091 ,  H01L2924/181 ,  H01L2924/00 ,  H01L2924/00012 ,  H01L2924/00014

Abstract: A semiconductor device and an electronic device are improved in performances by supporting a large current. An emitter terminal protrudes from a first side of a sealing body, and signal terminals protrude from a second sides of the sealing body. Namely, the side of the sealing body from which the emitter terminal protrudes and the side of the sealing body from which the signal terminals protrude are different. More particularly, the signal terminals protrude from the side of the sealing body opposite the side thereof from which the emitter terminal protrudes. Further, a second semiconductor chip including a diode formed therein is mounted over a first surface of a chip mounting portion in such a manner as to be situated between the emitter terminal and the a first semiconductor chip including an IGBT formed therein in plan view.