公开(公告)号：US20150194381A1

公开(公告)日：2015-07-09

申请号：US14666602

申请日：2015-03-24

Applicant: Renesas Electronics Corporation

Inventor： Takuro HOMMA ,  Katsuhiko HOTTA ,  Takashi MORIYAMA

IPC: H01L23/50 ,  H01L23/482

CPC classification number: H01L23/50 ,  H01L22/32 ,  H01L23/3192 ,  H01L23/4827 ,  H01L24/03 ,  H01L24/06 ,  H01L24/45 ,  H01L24/48 ,  H01L24/73 ,  H01L2224/02166 ,  H01L2224/0392 ,  H01L2224/0401 ,  H01L2224/04042 ,  H01L2224/05552 ,  H01L2224/05553 ,  H01L2224/05567 ,  H01L2224/05571 ,  H01L2224/05624 ,  H01L2224/32225 ,  H01L2224/45144 ,  H01L2224/48091 ,  H01L2224/48227 ,  H01L2224/48228 ,  H01L2224/48624 ,  H01L2224/73265 ,  H01L2924/01004 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01007 ,  H01L2924/01013 ,  H01L2924/01014 ,  H01L2924/01015 ,  H01L2924/01018 ,  H01L2924/01019 ,  H01L2924/01022 ,  H01L2924/01025 ,  H01L2924/01027 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01045 ,  H01L2924/01047 ,  H01L2924/01051 ,  H01L2924/01074 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/014 ,  H01L2924/04941 ,  H01L2924/05042 ,  H01L2924/10253 ,  H01L2924/1306 ,  H01L2924/13091 ,  H01L2924/14 ,  H01L2924/15311 ,  H01L2924/15788 ,  H01L2924/181 ,  H01L2924/19041 ,  H01L2924/19043 ,  H01L2924/00014 ,  H01L2924/00 ,  H01L2924/00012

Abstract: In manufacturing an LSI, or semiconductor integrated circuit device, the step of assembling device (such as resin sealing step) is normally followed by a voltage-application test in an environment of high temperature (e.g., from 85 to 130° C.) and high humidity (e.g., about 80% RH). It has been found that separation of a titanium nitride anti-reflection film from an upper film and generation of cracks in the titanium nitride film at an upper surface edge part of the aluminum-based bonding pad applied with a positive voltage in the test is caused by an electrochemical reaction due to moisture incoming through the sealing resin and the like to generate oxidation and bulging of the titanium nitride film. These problems are addressed by removing the titanium nitride film over the pad in a ring or slit shape at peripheral area of the aluminum-based bonding pad.

Abstract translation: 在制造LSI或半导体集成电路器件时，组装器件（如树脂密封步骤）的步骤通常在高温（例如85〜130℃）的环境中进行电压施加试验， 高湿度（例如约80％RH）。 已经发现，在测试中施加正电压的铝基焊盘的上表面边缘部分处，从上膜分离氮化钛抗反射膜和在氮化钛膜中产生裂纹 通过由于通过密封树脂等的水分引起的电化学反应，以产生氮化钛膜的氧化和膨胀。 这些问题通过在铝基焊盘的周边区域以环或狭缝形状移除焊盘上的氮化钛膜来解决。

公开(公告)号：US20130149855A1

公开(公告)日：2013-06-13

申请号：US13760177

申请日：2013-02-06

Applicant: Renesas Electronics Corporation

Inventor： Takuro HOMMA ,  Yoshifumi TAKATA

IPC: H01L21/02

CPC classification number: H01L21/02697 ,  H01L22/32 ,  H01L23/293 ,  H01L23/3128 ,  H01L23/3135 ,  H01L23/562 ,  H01L23/564 ,  H01L24/03 ,  H01L24/05 ,  H01L24/45 ,  H01L24/48 ,  H01L24/73 ,  H01L24/97 ,  H01L2224/02166 ,  H01L2224/0392 ,  H01L2224/04042 ,  H01L2224/05073 ,  H01L2224/05093 ,  H01L2224/05166 ,  H01L2224/05187 ,  H01L2224/05553 ,  H01L2224/05567 ,  H01L2224/05571 ,  H01L2224/05624 ,  H01L2224/32225 ,  H01L2224/45124 ,  H01L2224/45144 ,  H01L2224/4807 ,  H01L2224/48091 ,  H01L2224/48227 ,  H01L2224/48453 ,  H01L2224/48465 ,  H01L2224/48624 ,  H01L2224/48724 ,  H01L2224/73265 ,  H01L2224/97 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01014 ,  H01L2924/01018 ,  H01L2924/01022 ,  H01L2924/01027 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01046 ,  H01L2924/0105 ,  H01L2924/01051 ,  H01L2924/01052 ,  H01L2924/01064 ,  H01L2924/01073 ,  H01L2924/01074 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/014 ,  H01L2924/04941 ,  H01L2924/04953 ,  H01L2924/05042 ,  H01L2924/10161 ,  H01L2924/1306 ,  H01L2924/14 ,  H01L2924/15311 ,  H01L2924/181 ,  H01L2924/00014 ,  H01L2224/85 ,  H01L2924/00012 ,  H01L2924/00

Abstract: To provide: a technique capable of suppressing a titanium nitride film that is exposed at the side surface of an opening from turning into a titanium oxide film even when water permeates the opening over a pad from outside a semiconductor device and thus improving the reliability of the semiconductor device; and a technique capable of suppressing a crack from occurring in a surface protective film of a pad and improving the reliability of a semiconductor device. An opening is formed so that the diameter of the opening is smaller than the diameter of another opening and the opening is included in the other opening. Due to this, it is possible to cover the side surface of an antireflection film that is exposed at the side surface of the other opening with a surface protective film in which the opening is formed. As a result of this, it is possible to form a pad without exposing the side surface of the antireflection film.

Abstract translation: 提供：即使当水从半导体器件的外部渗透到焊盘上的开口时，即使在开口的侧面露出的氮化钛膜也能够转变成氧化钛膜，因此能够提高其可靠性 半导体器件; 以及能够抑制在焊盘的表面保护膜中发生裂纹的技术，并提高半导体器件的可靠性。 形成开口，使得开口的直径小于另一开口的直径，并且开口包括在另一个开口中。 由此，可以用形成有开口的表面保护膜覆盖在另一开口的侧面露出的防反射膜的侧面。 作为其结果，可以形成垫而不使抗反射膜的侧表面暴露。