摘要:
The present invention provides an etching system having a plurality of etching chambers (16, 18, 20) disposed about a transfer chamber (14), wherein the etching chambers are adapted to be selectively mounted at different positions with respect to the transfer chamber.
摘要:
An arrangement for improved thermal and/or electrical coupling between parts disposed in electronic device processing equipment is provided. In an illustrated embodiment, an improved coupling between a chamber liner and a chamber wall is provided which can be utilized in semiconductor processing equipment. The arrangement includes a compressible coupling or gasket which is compressed between a wedge ring and the chamber wall. The chamber liner is coupled to the wedge ring, so that the chamber liner is coupled to the chamber wall by way of the wedge ring and compressible coupling.
摘要:
A high throughput chemical treatment system for processing a plurality of substrates is described. The chemical treatment system is configured to chemically treat a plurality of substrates in a dry, non-plasma environment. A substrate support in the chemical treatment system is configured to support a plurality of substrates.
摘要:
A high throughput chemical treatment system for processing a plurality of substrates is described. The chemical treatment system is configured to chemically treat a plurality of substrates in a dry, non-plasma environment.
摘要:
Disclosed are an apparatus, system, and method for scanning a substrate or other workpiece through a gas-cluster ion beam (GCIB), or any other type of ion beam. The workpiece scanning apparatus is configured to receive and hold a substrate for irradiation by the GCIB and to scan it through the GCIB in two directions using two movements: a reciprocating fast-scan movement, and a slow-scan movement. The slow-scan movement is actuated using a servo motor and a belt drive system, the belt drive system being configured to reduce the failure rate of the workpiece scanning apparatus.
摘要:
A heater assembly configured to elevate a temperature of a processing element in a chemical treatment system is described. The heater assembly may be configured to uniformly heat a large area processing element, such as a processing element that spans a plurality of substrates. Additionally, for example, the heater assembly may be configured to elevate a temperature of an upper assembly, a gas injection assembly, a substrate holder, a chamber wall, or any combination of two or more thereof.
摘要:
A heater assembly configured to elevate a temperature of a processing element in a chemical treatment system is described. The heater assembly may be configured to uniformly heat a large area processing element, such as a processing element that spans a plurality of substrates. Additionally, for example, the heater assembly may be configured to elevate a temperature of an upper assembly, a gas injection assembly, a substrate holder, a chamber wall, or any combination of two or more thereof.
摘要:
A high throughput processing system having a chemical treatment system and a thermal treatment system for processing a plurality of substrates is described. The chemical treatment system is configured to chemically treat a plurality of substrates in a dry, non-plasma environment. The thermal treatment system is configured to thermally treat a plurality of substrates chemically treated in the chemical treatment system.
摘要:
A high throughput chemical treatment system for processing a plurality of substrates is described. The chemical treatment system is configured to chemically treat a plurality of substrates in a dry, non-plasma environment.
摘要:
A high throughput processing system having a chemical treatment system and a thermal treatment system for processing a plurality of substrates is described. The chemical treatment system is configured to chemically treat a plurality of substrates in a dry, non-plasma environment. The thermal treatment system is configured to thermally treat a plurality of substrates chemically treated in the chemical treatment system.