公开(公告)号：US4511614A

公开(公告)日：1985-04-16

申请号：US546780

申请日：1983-10-31

Applicant: Richard L. Greeson ,  George I. Geikas

Inventor： Richard L. Greeson ,  George I. Geikas

IPC: C23C18/36 ,  B32B3/26 ,  B05D5/06 ,  C23C1/10 ,  C23F5/02

CPC classification number: C23C18/36 ,  Y10T428/24355 ,  Y10T428/31 ,  Y10T428/31678

Abstract: A substrate having high absorptance and emittance is produced by roughening the surface of the substrate, immersing the substrate in a first electroless plating bath having a low phosphorus to nickel concentration, then immersing the substrate in a second electroless plating bath having a phosphorus to nickel concentration higher than that of said first electroless plating bath. Thereafter, the resulting electroless nickel-phosphorus alloy coated substrate is immersed in an aqueous acidic etchant bath containing sulfuric acid, nitric acid and divalent nickel to develop a highly blackened surface on said substrate.

Abstract translation: 通过使衬底的表面粗糙化，将衬底浸入具有低磷至镍浓度的第一无电镀浴中，然后将衬底浸入具有磷至镍浓度的第二无电镀浴中，从而产生具有高吸收率和发射率的衬底 高于所述第一化学镀浴。 然后，将所得到的无电解镍 - 磷合金涂覆的基材浸入含有硫酸，硝酸和二价镍的酸性腐蚀剂水浴中，以在所述基材上形成高度变黑的表面。

公开(公告)号：US4077045A

公开(公告)日：1978-02-28

申请号：US430431

申请日：1974-01-03

Applicant: Richard L. Greeson ,  Elliott M. Philofsky

Inventor： Richard L. Greeson ,  Elliott M. Philofsky

IPC: H01L21/285 ,  B23K35/00 ,  C23C14/16 ,  H01L21/28 ,  H01L21/60 ,  H01L23/051 ,  H01L23/482 ,  H01L23/485 ,  H01L23/492 ,  H01L23/48 ,  H01L29/46

CPC classification number: H01L24/33 ,  B23K35/001 ,  C23C14/16 ,  H01L23/051 ,  H01L23/485 ,  H01L23/4924 ,  H01L24/01 ,  H01L24/05 ,  H01L24/29 ,  H01L24/83 ,  B23K2035/008 ,  H01L2224/29101 ,  H01L2224/29111 ,  H01L2224/29144 ,  H01L2224/325 ,  H01L2224/8319 ,  H01L2224/83801 ,  H01L2924/00014 ,  H01L2924/01006 ,  H01L2924/01007 ,  H01L2924/01013 ,  H01L2924/01014 ,  H01L2924/01015 ,  H01L2924/01019 ,  H01L2924/01027 ,  H01L2924/01028 ,  H01L2924/01029 ,  H01L2924/01032 ,  H01L2924/01033 ,  H01L2924/01042 ,  H01L2924/01045 ,  H01L2924/01046 ,  H01L2924/01047 ,  H01L2924/0105 ,  H01L2924/01074 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/0132 ,  H01L2924/01322 ,  H01L2924/01327 ,  H01L2924/0133 ,  H01L2924/014 ,  H01L2924/10253 ,  H01L2924/12035 ,  H01L2924/12042 ,  Y10S148/033

Abstract: A metallization system for metallurgically bonding a semiconductor die to metallic conducting slugs as terminals at the same time, and at the same temperature, that a surrounding glass sleeve is hermetically sealed to the conducting slugs for forming a zener diode, for example, is disclosed. The metallization system comprises a combination of aluminum, tin and palladium, for bonding to molybdenum, the aluminum being vapor deposited followed by a vapor co-deposition of aluminum and tin and further followed by a vapor deposited layer of palladium.A method of making a device is disclosed wherein the die, two metal slugs of molybdenum and a preformed high temperature sealing glass are assembled together and subjected to a time-temperature cycle which includes a rapid rise to a high temperature at which metallurgical bonding of the die to the metal slugs and hermetic sealing of the glass to the metal slugs take place in a short time interval followed by rapid cooling of the assembly to a temperature slightly below the eutectic of aluminum and silicon.

Abstract translation: 公开了一种金属化系统，用于将半导体管芯与金属导电段结合在一起作为端子同时和在相同的温度下，例如将周围的玻璃套筒气密地密封到用于形成齐纳二极管的导电段上。 金属化系统包括铝，锡和钯的组合，用于与钼结合，将铝蒸汽沉积，然后进行铝和锡的蒸汽共沉积，并且随后是钯的气相沉积层。

公开(公告)号：US4009299A

公开(公告)日：1977-02-22

申请号：US624681

申请日：1975-10-22

Applicant: Dervin L. Flowers ,  Richard L. Greeson

Inventor： Dervin L. Flowers ,  Richard L. Greeson

IPC: C23F1/30 ,  H01L21/306 ,  B05D5/12 ,  B23P7/00

CPC classification number: H01L21/02052 ,  C23F1/30

Abstract: Immersion of semiconductor devices, particularly diodes, having a defective tin plating thereon in a solution of 5 - 20 percent by weight trichloroacetic acid, 0.1 to 5 percent by weight of a compound selected from the group consisting of cationic, anionic, and nonionic surfactants and the balance water effectively removes the tin therefrom. The process is effective at room temperature but preferably is performed at approximately 100.degree. C.

Abstract translation: 在5-20重量％三氯乙酸，0.1-5重量％的选自阳离子，阴离子和非离子表面活性剂的化合物的溶液中浸渍其上具有不良镀锡的半导体器件，特别是二极管，以及 余量水有效地从其中除去锡。 该方法在室温下有效，但优选在约100℃下进行。

公开(公告)号：US3987217A

公开(公告)日：1976-10-19

申请号：US515278

申请日：1974-10-16

Applicant: Richard L. Greeson ,  Elliott M. Philofsky

Inventor： Richard L. Greeson ,  Elliott M. Philofsky

IPC: B23K35/00 ,  C23C14/16 ,  H01L21/60 ,  H01L23/051 ,  H01L23/485 ,  H01L23/492 ,  B05D5/12 ,  H01L21/02

CPC classification number: H01L24/33 ,  B23K35/001 ,  C23C14/16 ,  H01L23/051 ,  H01L23/485 ,  H01L23/4924 ,  H01L24/01 ,  H01L24/83 ,  B23K2035/008 ,  H01L2224/29111 ,  H01L2224/8319 ,  H01L2224/83801 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01014 ,  H01L2924/01015 ,  H01L2924/01019 ,  H01L2924/01027 ,  H01L2924/01029 ,  H01L2924/01032 ,  H01L2924/01033 ,  H01L2924/01042 ,  H01L2924/01045 ,  H01L2924/01046 ,  H01L2924/01047 ,  H01L2924/0105 ,  H01L2924/01074 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/0132 ,  H01L2924/01322 ,  H01L2924/01327 ,  H01L2924/0133 ,  H01L2924/014 ,  H01L2924/10253 ,  H01L2924/12035 ,  H01L2924/12042

Abstract: A metallization system for metallurgically bonding a semiconductor die to metallic conducting slugs as terminals at the same time, and at the same temperature, that a surrounding glass sleeve is hermetically sealed to the conducting slugs for forming a zener diode, for example, is disclosed. The metallization system comprises a combination of aluminum, tin and palladium, for bonding to molybdenum, the aluminum being vapor deposited followed by a vapor co-deposition of aluminum and tin and further followed by a vapor deposited layer of palladium.A method of making a device is disclosed wherein the die, two metal slugs of molybdenum and a preformed high temperature sealing glass are assembled together and subjected to a time-temperature cycle which includes a rapid rise to a high temperature at which metallurgical bonding of the die to the metal slugs and hermetic sealing of the glass to the metal slugs take place in a short time interval followed by rapid cooling of the assembly to a temperature slightly below the eutectic of aluminum and silicon.

公开(公告)号：US3985515A

公开(公告)日：1976-10-12

申请号：US515280

申请日：1974-10-16

Applicant: Richard L. Greeson ,  Elliott M. Philofsky

Inventor： Richard L. Greeson ,  Elliott M. Philofsky

IPC: B23K35/00 ,  H01L21/60 ,  H01L23/051 ,  H01L23/485 ,  H01L23/492 ,  B32B15/20

CPC classification number: H01L24/33 ,  B23K35/001 ,  H01L23/051 ,  H01L23/485 ,  H01L23/4924 ,  H01L24/01 ,  H01L24/32 ,  H01L24/83 ,  B23K2035/008 ,  H01L2224/29111 ,  H01L2224/325 ,  H01L2224/8319 ,  H01L2224/83801 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01014 ,  H01L2924/01015 ,  H01L2924/01019 ,  H01L2924/01027 ,  H01L2924/01029 ,  H01L2924/01032 ,  H01L2924/01033 ,  H01L2924/01042 ,  H01L2924/01045 ,  H01L2924/01046 ,  H01L2924/01047 ,  H01L2924/0105 ,  H01L2924/01074 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/0132 ,  H01L2924/01322 ,  H01L2924/01327 ,  H01L2924/0133 ,  H01L2924/014 ,  H01L2924/10253 ,  H01L2924/12035 ,  H01L2924/12042 ,  Y10S428/926 ,  Y10S428/938 ,  Y10T428/12674 ,  Y10T428/12722 ,  Y10T428/12736 ,  Y10T428/12875

Abstract: A metallization system for metallurgically bonding a semiconductor die to metallic conducting slugs as terminals at the same time, and at the same temperature, that a surrounding glass sleeve is hermetically sealed to the conducting slugs for forming a zener diode, for example, is disclosed. The metallization system comprises a combination of aluminum, tin and palladium, for bonding to molybdenum, the aluminum being vapor deposited followed by a vapor co-deposition of aluminum and tin and further followed by a vapor deposited layer of palladium.A method of making a device is disclosed wherein the die, two metal slugs of molybdenum and a preformed high temperature sealing glass are assembled together and subjected to a time-temperature cycle which includes a rapid rise to a high temperature at which metallurgical bonding of the die to the metal slugs and hermetic sealing of the glass to the metal slugs take place in a short time interval followed by rapid cooling of the assembly to a temperature slightly below the eutectic of aluminum and silicon.

公开(公告)号：US4187599A

公开(公告)日：1980-02-12

申请号：US908037

申请日：1978-05-22

Applicant: Dervin L. Flowers ,  Richard L. Greeson ,  V. Louise Rice

Inventor： Dervin L. Flowers ,  Richard L. Greeson ,  V. Louise Rice

IPC: H01L23/04 ,  H01L23/051 ,  H01L23/485 ,  B01J17/00

CPC classification number: H01L24/10 ,  H01L23/041 ,  H01L23/051 ,  H01L24/13 ,  H01L2224/13 ,  H01L2224/13099 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01015 ,  H01L2924/01019 ,  H01L2924/01022 ,  H01L2924/01024 ,  H01L2924/01027 ,  H01L2924/01029 ,  H01L2924/01042 ,  H01L2924/01046 ,  H01L2924/01047 ,  H01L2924/01074 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/014 ,  H01L2924/12036 ,  H01L2924/12042

Abstract: An improved metallization system for semiconductor substrates comprising successive layers of at least one barrier metal and tin is disclosed. A semiconductor package comprising a housing of impervious material, a semiconductor device having the metallization system of this invention disposed in the housing and conductor means bonded to the tin on the semiconductor device is also disclosed. The system is of particular usefulness in double stud diode packages.

Abstract translation: 公开了一种用于包括至少一个阻挡金属和锡的连续层的半导体衬底的改进的金属化系统。 还公开了一种半导体封装，其包括不透水材料的壳体，具有设置在壳体中的本发明的金属化系统的半导体器件和与半导体器件上的锡结合的导体装置。 该系统在双头二极管封装中特别有用。

公开(公告)号：US4146655A

公开(公告)日：1979-03-27

申请号：US919027

申请日：1978-06-26

Applicant: Earl K. Davis ,  Richard L. Greeson

Inventor： Earl K. Davis ,  Richard L. Greeson

IPC: C03C3/072 ,  C03C8/24 ,  H01B3/08 ,  H01L21/56 ,  H01L23/29 ,  C03C3/10 ,  H01L23/30

CPC classification number: H01L21/56 ,  C03C3/072 ,  C03C8/245 ,  H01B3/087 ,  H01L23/291 ,  H01L2924/0002

Abstract: An improved method for encapsulating a semiconductor diode wherein a semiconductor chip and a pair of leads are surrounded by an insulating glass. The improvement comprising the providing of an alkaline free low temperature encapsulating glass for semiconductors consisting essentially of 11-15 weight percent silica, 7-11 weight percent alumina, 63-68 weight percent lead oxide, 4-10 weight percent lead fluoride and 5-10 weight percent borate.

公开(公告)号：US3945111A

公开(公告)日：1976-03-23

申请号：US515279

申请日：1974-10-16

Applicant: Richard L. Greeson ,  Elliott M. Philofsky

Inventor： Richard L. Greeson ,  Elliott M. Philofsky

IPC: B23K35/00 ,  H01L21/60 ,  H01L23/051 ,  H01L23/485 ,  H01L23/492 ,  B01J17/00

CPC classification number: H01L24/33 ,  B23K35/001 ,  H01L23/051 ,  H01L23/485 ,  H01L23/4924 ,  H01L24/01 ,  H01L24/83 ,  B23K2035/008 ,  H01L2224/04026 ,  H01L2224/29111 ,  H01L2224/8319 ,  H01L2224/83801 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01014 ,  H01L2924/01015 ,  H01L2924/01019 ,  H01L2924/01023 ,  H01L2924/01027 ,  H01L2924/01029 ,  H01L2924/0103 ,  H01L2924/01032 ,  H01L2924/01033 ,  H01L2924/01039 ,  H01L2924/01042 ,  H01L2924/01045 ,  H01L2924/01046 ,  H01L2924/01047 ,  H01L2924/0105 ,  H01L2924/01074 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/0132 ,  H01L2924/01322 ,  H01L2924/01327 ,  H01L2924/0133 ,  H01L2924/014 ,  H01L2924/10253 ,  H01L2924/12035 ,  H01L2924/12042 ,  Y10T29/49171

Abstract: A metallization system for metallurgically bonding a semiconductor die to metallic conducting slugs as terminals at the same time, and at the same temperature, that a surrounding glass sleeve is hermetically sealed to the conducting slugs for forming a zener diode, for example, is disclosed. The metallization system comprises a combination of aluminum, tin and palladium, for bonding to molybdenum, the aluminum being vapor deposited followed by a vapor co-deposition of aluminum and tin and further followed by a vapor deposited layer of palladium.A method of making a device is disclosed wherein the die, two metal slugs of molybdenum and a preformed high temperature sealing glass are assembled together and subjected to a time-temperature cycle which includes a rapid rise to a high temperature at which metallurgical bonding of the die to the metal slugs and hermetic sealing of the glass to the metal slugs take place in a short time interval followed by rapid cooling of the assembly to a temperature slightly below the eutectic of aluminum and silicon.

Abstract translation: 公开了一种金属化系统，用于将半导体管芯与金属导电段结合在一起作为端子同时和在相同的温度下，例如将周围的玻璃套筒气密地密封到用于形成齐纳二极管的导电段上。 金属化系统包括铝，锡和钯的组合，用于与钼结合，将铝蒸汽沉积，然后进行铝和锡的蒸汽共沉积，并且随后是钯的气相沉积层。