LEADFRAME PACKAGE WITH INTEGRATED PARTIAL WAVEGUIDE INTERFACE
    5.
    发明申请
    LEADFRAME PACKAGE WITH INTEGRATED PARTIAL WAVEGUIDE INTERFACE 有权
    具有集成的部分波导接口的LEADFRAME封装

    公开(公告)号:US20120051000A1

    公开(公告)日:2012-03-01

    申请号:US13221693

    申请日:2011-08-30

    IPC分类号: H05K1/14 H01L31/18

    摘要: A MMIC package is disclosed comprising: a leadframe based overmolded package, a die positioned within the overmolded package; and a partial waveguide interface, wherein the partial waveguide interface is integral with the overmolded package facilitating low cost and reliable assembly. Also disclosed is an overmolded package where the die sits on a metal portion exposed on the bottom of the package and the package is configured for attachment to a chassis of a transceiver such that heat from the die is easily dissipated to the chassis with a direct thermal path. The disclosure facilitates parallel assembly of MMIC packages and use of pick and place/surface mounting technology for attaching the MMIC packages to the chassis of transceivers. This facilitates reliable and low cost transceivers.

    摘要翻译: 公开了一种MMIC封装,包括:基于引线框的包覆成型封装,位于所述包覆成型封装内的管芯; 和部分波导接口,其中部分波导接口与包覆成型的封装集成,促进了低成本和可靠的组装。 还公开了一种包覆成型的封装,其中管芯位于暴露在封装底部的金属部分上,并且封装构造成用于附接到收发器的底架,使得来自模具的热量容易地以直接热量散发到底架 路径。 本公开有助于MMIC封装的并行组装以及使用拾取和放置/表面安装技术将MMIC封装连接到收发器的底盘。 这有助于可靠和低成本的收发器。

    MMIC folded power amplifier
    9.
    发明授权
    MMIC folded power amplifier 有权
    MMIC折叠功率放大器

    公开(公告)号:US06388528B1

    公开(公告)日:2002-05-14

    申请号:US09961599

    申请日:2001-09-24

    IPC分类号: H03F368

    摘要: A MMIC power amplifier having a smaller die size and higher power output are realized with the improved amplifier and transistor geometry herein provided. In particular, transistors, such as FETs (field effect transistors) are displaced from a conventional FET geometry with alternating FETs being rotated in opposite directions. The inputs (gate pads) and outputs (drain pads) of two adjacent FETs may be “shared.” In a shared input configuration, a compensation network may be coupled to the input. The improved FET configuration reduces the number of splitting and combining networks by up to 50% over the prior art and the die area for a typical 4 watt power amplifier is reduced by 48-72% over the prior art. The improved amplifier configuration provides a multi-sectional configuration wherein one section may be the mirrored image of another. In a two section amplifier, the amplifier appears to be “folded.”

    摘要翻译: 具有较小管芯尺寸和较高功率输出的MMIC功率放大器通过本文提供的改进的放大器和晶体管几何结构来实现。 特别地,诸如FET(场效应晶体管)的晶体管从传统的FET几何形状中移位,交变的FET沿相反方向旋转。 两个相邻FET的输入(栅极焊盘)和输出(漏极焊盘)可以“共享”。 在共享输入配置中,补偿网络可以耦合到输入。 改进的FET配置将分离和组合网络的数量减少了高达现有技术的50%,并且典型的4瓦功率放大器的管芯面积比现有技术减少了48-72%。 改进的放大器配置提供多截面配置,其中一个部分可以是另一部分的镜像。 在两段放大器中,放大器似乎是“折叠的”。