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11 条记录 (耗时 0.024 秒)

    Single Junction CIGS/CIS Solar Module
    1.
    发明申请
    Single Junction CIGS/CIS Solar Module 审中-公开
    单相CIGS / CIS太阳能模块

    公开(公告)号：US20110259395A1

    公开(公告)日：2011-10-27

    申请号：US13086135

    申请日：2011-04-13

    申请人： Robert D. Wieting ,  Rajiv Pethe ,  Kannan Ramanathan ,  May Shao ,  Ashish Tandon

    发明人： Robert D. Wieting ,  Rajiv Pethe ,  Kannan Ramanathan ,  May Shao ,  Ashish Tandon

    IPC分类号： H01L31/0236 ,  H01L31/18 ,  H01L27/142

    CPC分类号： H01L31/0322 ,  H01L21/02422 ,  H01L21/02488 ,  H01L21/02568 ,  H01L21/02614 ,  H01L31/022466 ,  H01L31/022483 ,  H01L31/0749 ,  Y02E10/541 ,  Y02P70/521

    摘要： A high efficiency thin-film photovoltaic module is formed on a substrate. The photovoltaic module includes a plurality of stripe shaped photovoltaic cells electrically coupled to each other and physically disposed in parallel to the length one next to another across the width. Each cell includes a barrier material overlying the surface and a first electrode overlying the barrier material. Each cell further includes an absorber formed overlying the first electrode. The absorber includes a copper gallium indium diselenide compound material characterized by an energy band-gap of about 1 eV to 1.1 eV. Each cell additionally includes a buffer material overlying the absorber and a bi-layer zinc oxide material comprising a high resistivity transparent layer overlying the buffer material and a low resistivity transparent layer overlying the high resistivity transparent layer.

    摘要翻译： 在基板上形成高效率的薄膜光伏模块。 光伏模块包括多个条形的光伏电池，它们彼此电耦合，并且物理地设置成与跨越宽度的另一个相邻的长度平行。 每个电池包括覆盖在表面上的阻挡材料和覆盖阻挡材料的第一电极。 每个电池还包括形成在第一电极上的吸收体。 吸收剂包括铜镓铟二硒化合物材料，其特征在于约1eV至1.1eV的能带隙。 每个电池还包括覆盖吸收体的缓冲材料和包含覆盖在缓冲材料上的高电阻率透明层和覆盖在高电阻率透明层上的低电阻率透明层的双层氧化锌材料。

    Method and Device for Cadmium-Free Solar Cells
    2.
    发明申请
    Method and Device for Cadmium-Free Solar Cells 失效
    无镉太阳能电池的方法和装置

    公开(公告)号：US20120240989A1

    公开(公告)日：2012-09-27

    申请号：US13236286

    申请日：2011-09-19

    申请人： Kannan Ramanathan ,  Robert D. Wieting

    发明人： Kannan Ramanathan ,  Robert D. Wieting

    IPC分类号： H01L31/0749 ,  H01L31/18

    CPC分类号： H01L31/0749 ,  H01L31/0322 ,  H01L31/0323 ,  H01L31/0682 ,  Y02E10/541 ,  Y02E10/547

    摘要： A method for fabricating a thin film photovoltaic device is provided. The method includes providing a substrate comprising a thin film photovoltaic absorber which has a surface including copper, indium, gallium, selenium, and sulfur. The method further includes subjecting the surface to a material containing at least a zinc species substantially free of any cadmium. The surface is heated to cause formation of a zinc doped material. The zinc doped material is free from cadmium. Furthermore the method includes forming a zinc oxide material overlying the zinc doped material and forming a transparent conductive material overlying the zinc oxide material.

    摘要翻译： 提供一种制造薄膜光伏器件的方法。 该方法包括提供包括具有包括铜，铟，镓，硒和硫的表面的薄膜光伏吸收体的衬底。 该方法还包括将表面经受至少含有基本上不含任何镉的锌物质的材料。 加热表面以引起锌掺杂材料的形成。 锌掺杂材料不含镉。 此外，该方法包括形成覆盖锌掺杂材料的氧化锌材料并形成覆盖氧化锌材料的透明导电材料。

    Method and device for cadmium-free solar cells
    3.
    发明授权
    Method and device for cadmium-free solar cells 失效
    无镉太阳能电池的方法和装置

    公开(公告)号：US08628997B2

    公开(公告)日：2014-01-14

    申请号：US13236286

    申请日：2011-09-19

    申请人： Kannan Ramanathan ,  Robert D. Wieting

    发明人： Kannan Ramanathan ,  Robert D. Wieting

    IPC分类号： H01L31/18

    CPC分类号： H01L31/0749 ,  H01L31/0322 ,  H01L31/0323 ,  H01L31/0682 ,  Y02E10/541 ,  Y02E10/547

    摘要： A method for fabricating a thin film photovoltaic device is provided. The method includes providing a substrate comprising a thin film photovoltaic absorber which has a surface including copper, indium, gallium, selenium, and sulfur. The method further includes subjecting the surface to a material containing at least a zinc species substantially free of any cadmium. The surface is heated to cause formation of a zinc doped material. The zinc doped material is free from cadmium. Furthermore the method includes forming a zinc oxide material overlying the zinc doped material and forming a transparent conductive material overlying the zinc oxide material.

    摘要翻译： 提供一种制造薄膜光伏器件的方法。 该方法包括提供包括具有包括铜，铟，镓，硒和硫的表面的薄膜光伏吸收体的衬底。 该方法还包括将表面经受至少含有基本上不含任何镉的锌物质的材料。 加热表面以引起锌掺杂材料的形成。 锌掺杂材料不含镉。 此外，该方法包括形成覆盖锌掺杂材料的氧化锌材料并形成覆盖氧化锌材料的透明导电材料。

    ZnO/Cu(InGa)Se2 solar cells prepared by vapor phase Zn doping
    7.
    发明授权
    ZnO/Cu(InGa)Se2 solar cells prepared by vapor phase Zn doping 失效
    通过气相Zn掺杂制备的ZnO / Cu（InGa）Se2太阳能电池

    公开(公告)号：US07179677B2

    公开(公告)日：2007-02-20

    申请号：US10534217

    申请日：2003-09-03

    申请人： Kannan Ramanathan ,  Falah S. Hasoon ,  Sarah E. Asher ,  James Dolan ,  James C. Keane

    发明人： Kannan Ramanathan ,  Falah S. Hasoon ,  Sarah E. Asher ,  James Dolan ,  James C. Keane

    IPC分类号： H01L31/18

    CPC分类号： H01L31/1836 ,  H01L31/0749 ,  Y02E10/541

    摘要： A process for making a thin film ZnO/Cu(InGa)Se2 solar cell without depositing a buffer layer and by Zn doping from a vapor phase, comprising: depositing Cu(InGa)Se2 layer on a metal back contact deposited on a glass substrate; heating the Cu(InGa)Se2 layer on the metal back contact on the glass substrate to a temperature range between about 100° C. to about 250° C.; subjecting the heated layer of Cu(InGa)Se2 to an evaporant species from a Zn compound; and sputter depositing ZnO on the Zn compound evaporant species treated layer of Cu(InGa)Se2.

    摘要翻译： 一种用于制备薄膜ZnO / Cu（InGa）Se 2太阳能电池而不沉积缓冲层和通过从气相中Zn掺杂的方法，包括：沉积Cu（InGa）Se2 沉积在玻璃基板上的金属背面接触层上; 将玻璃基板上的金属背接触件上的Cu（InGa）Se 2＆lt; 2＆gt;层加热至约100℃至约250℃的温度范围; 将Cu（InGa）Se 2＆lt; 2＆gt;的加热层从Zn化合物中经受蒸发物质; 并在Cu（InGa）Se 2 Zn的Zn化合物蒸发物质处理层上溅射沉积ZnO。

    Preparation of cuxinygazsen precursor films and powders by electroless deposition
    8.
    发明授权
    Preparation of cuxinygazsen precursor films and powders by electroless deposition 有权
    通过无电沉积制备铜镍铁合金前体膜和粉末

    公开(公告)号：US5976614A

    公开(公告)日：1999-11-02

    申请号：US170840

    申请日：1998-10-13

    申请人： Raghu N. Bhattacharya ,  Wendi Kay Batchelor ,  Holm Wiesner ,  Kannan Ramanathan ,  Rommel Noufi

    发明人： Raghu N. Bhattacharya ,  Wendi Kay Batchelor ,  Holm Wiesner ,  Kannan Ramanathan ,  Rommel Noufi

    IPC分类号： C23C18/48 ,  C23C18/54 ,  B05D5/12

    CPC分类号： C23C18/54 ,  C23C18/48

    摘要： A method for electroless deposition of Cu.sub.x In.sub.y Ga.sub.z Se.sub.n (x=0-2, y=0-2, z=0-2, n=0-3) precursor films and powders onto a metallic substrate comprising:preparing an aqueous bath solution of compounds selected from the group consisting of:I) a copper compound, a selenium compound, an indium compound and gallium compound; II) a copper compound, a selenium compound and an indium compound; III) a selenium compound, and indium compound and a gallium compound; IV) a selenium compound and a indium compound; and V) a copper compound and selenium compound; each compound being present in sufficient quantity to react with each other to produce Cu.sub.x In.sub.y Ga.sub.z Se.sub.n (x=0-2, y=0-2, z=0-2, n=0-3);adjusting the pH of the aqueous bath solution to an acidic value by the addition of a dilute acid; andinitiating an electroless reaction with an oxidizing counterelectrode for a sufficient time to cause a deposit of Cu.sub.x In.sub.y Ga.sub.z Se.sub.n (x=0-2, y=0-2, z=0-2, n=0-3) from the aqueous bath solution onto a metallic substrate.

    摘要翻译： 一种用于将CuxInyGazSen（x = 0-2，y = 0-2，z = 0-2，n = 0-3）前体膜和粉末无电沉积到金属基底上的方法，包括：制备选择的化合物的水浴溶液 由以下组成：I）铜化合物，硒化合物，铟化合物和镓化合物; II）铜化合物，硒化合物和铟化合物; III）硒化合物，铟化合物和镓化合物; IV）硒化合物和铟化合物; 和V）铜化合物和硒化合物; 每种化合物以足够的量存在以反应以产生CuxInyGazSen（x = 0-2，y = 0-2，z = 0-2，n = 0-3）; 通过加入稀酸将水浴溶液的pH调节至酸性值; 并用氧化反电极开始化学反应足够的时间以使CuxInyGazSen（x = 0-2，y = 0-2，z = 0-2，n = 0-3）从水浴溶液中沉积到 金属基材。

    Zno/cu(inga)se2 solar cells prepared by vapor phase zn doping
    9.
    发明申请
    Zno/cu(inga)se2 solar cells prepared by vapor phase zn doping 失效
    Zno / cu（inga）se2太阳能电池通过汽相掺杂制备

    公开(公告)号：US20050257825A1

    公开(公告)日：2005-11-24

    申请号：US10534217

    申请日：2003-09-03

    申请人： Kannan Ramanathan ,  Falah Hasoon ,  Sarah Asher ,  James Dolan ,  James Keane

    发明人： Kannan Ramanathan ,  Falah Hasoon ,  Sarah Asher ,  James Dolan ,  James Keane

    IPC分类号： H01L31/00 ,  H01L31/0272 ,  H01L31/0336 ,  H01L31/04 ,  H01L31/072 ,  H01L31/18

    CPC分类号： H01L31/1836 ,  H01L31/0749 ,  Y02E10/541

    摘要： A process for making a thin film ZnO/Cu(InGa)Se2 solar cell without depositing a buffer layer and by Zn doping from a vapor phase, comprising: depositing Cu(InGa)Se2 layer on a metal back contact deposited on a glass substrate; heating the Cu(InGa)Se2 layer on the metal back contact on the glass substrate to a temperature range between about 100° C. to about 250° C.; subjecting the heated layer of Cu(InGa)Se2 to an evaporant species from a Zn compound; and sputter depositing ZnO on the Zn compound evaporant species treated layer of Cu(InGa)Se2.

    摘要翻译： 一种用于制造薄膜ZnO / Cu（InGa）Se 2太阳能电池而不沉积缓冲层和通过从气相中Zn掺杂的方法，包括：沉积Cu（InGa）Se2 沉积在玻璃基板上的金属背面接触层上; 将玻璃基板上的金属背接触件上的Cu（InGa）Se 2＆lt; 2＆gt;层加热至约100℃至约250℃的温度范围; 将Cu（InGa）Se 2＆lt; 2＆gt;的加热层从Zn化合物中经受蒸发物质; 并在Cu（InGa）Se 2 Zn的Zn化合物蒸发物质处理层上溅射沉积ZnO。