Lithographic photoresist composition and process for its use in the
manufacture of integrated circuits
    2.
    发明授权
    Lithographic photoresist composition and process for its use in the manufacture of integrated circuits 失效
    平版光刻胶组合物及其在制造集成电路中的应用

    公开(公告)号:US06165678A

    公开(公告)日:2000-12-26

    申请号:US111558

    申请日:1998-07-08

    IPC分类号: G03F7/004 G03F7/039

    摘要: A novel radiation-sensitive lithographic photoresist composition is provided which has improved sensitivity and resolution. The composition comprises a photosensitive acid generator and an acrylate or methacrylate copolymer. The copolymer contains first monomeric units having polar pendant groups and second monomeric units containing photoacid-cleavable ester groups. The polar pendant groups preferably comprise C.sub.6 -C.sub.12 alicyclic substituents containing a polar moiety R*, wherein the alicyclic substituents are bound through a linker moiety to the polymer backbone. Other monomeric units may be included as well. A process for using the composition to generate resist images on a substrate, i.e., in the manufacture of integrated circuits or the like.

    摘要翻译: 提供了一种具有改进的灵敏度和分辨率的新型辐射敏感平版印刷光刻胶组合物。 该组合物包含光敏酸产生剂和丙烯酸酯或甲基丙烯酸酯共聚物。 共聚物含有具有极性侧基的第一单体单元和含有光可酸裂解酯基的第二单体单元。 极性侧基优选包含含有极性部分R *的C6-C12脂环族取代基,其中脂环取代基通过连接体部分结合至聚合物主链。 也可以包括其它单体单元。 一种使用该组合物在基板上生成抗蚀剂图像,即集成电路等的制造方法。

    Method for patterning a low activation energy photoresist
    3.
    发明授权
    Method for patterning a low activation energy photoresist 有权
    图案化低活化能光致抗蚀剂的方法

    公开(公告)号:US07820369B2

    公开(公告)日:2010-10-26

    申请号:US10729452

    申请日:2003-12-04

    IPC分类号: G03F7/30

    摘要: Polymers containing an acetal or ketal linkage and their use in lithographic photoresist compositions, particularly in chemical amplification photoresists, are provided. The polymer is prepared from at least one first olefinic monomer containing an acetal or ketal linkage, the acid-catalyzed cleavage of which renders the polymer soluble in aqueous base; and at least one second olefinic monomer selected from (i) an olefinic monomer containing a pendant fluorinated hydroxyalkyl group RH, (ii) an olefinic monomer containing a pendant fluorinated alkylsulfonamide group RS, and (iii) combinations thereof. The acetal or ketal linkage may be contained within an acid-cleavable substituent RCL in the first olefinic monomer. A method for using the photoresist compositions containing these polymers in preparing a patterned substrate is also provided in which the polymer is rendered soluble in aqueous base at a temperature of less than about 100° C. by acid-catalyzed deprotection of pendent acetal- or ketal-protected carboxylic acid groups.

    摘要翻译: 提供了含有缩醛或缩酮键的聚合物及其在平版光刻胶组合物中的用途,特别是在化学放大光致抗蚀剂中。 聚合物由至少一种含有缩醛或缩酮键的第一烯属单体制备,其酸催化裂解使聚合物可溶于碱水溶液; 和至少一种第二烯烃单体,其选自(i)含有侧氟化羟烷基RH的烯烃单体,(ii)含有侧氟化烷基磺酰胺基RS的烯烃单体,和(iii)其组合。 缩醛或缩酮键可以包含在第一烯属单体中的酸可裂解取代基RCL中。 还提供了一种使用含有这些聚合物的光致抗蚀剂组合物来制备图案化基材的方法,其中聚合物在低于约100℃的温度下可溶于碱水溶液,通过酸催化的侧链缩醛或缩酮脱保护 保护的羧酸基团。

    Low activation energy photoresists
    4.
    发明授权
    Low activation energy photoresists 有权
    低活化能光刻胶

    公开(公告)号:US07193023B2

    公开(公告)日:2007-03-20

    申请号:US10729169

    申请日:2003-12-04

    IPC分类号: C08F112/68

    CPC分类号: G03F7/0046 G03F7/0397

    摘要: Polymers containing an acetal or ketal linkage and their use in lithographic photoresist compositions, particularly in chemical amplification photoresists, are provided. The polymer is prepared from at least one first olefinic monomer containing an acetal or ketal linkage, the acid-catalyzed cleavage of which renders the polymer soluble in aqueous base; and at least one second olefinic monomer selected from (i) an olefinic monomer containing a pendant fluorinated hydroxyalkyl group RH, (ii) an olefinic monomer containing a pendant fluorinated alkylsulfonamide group RS, and (iii) combinations thereof. The acetal or ketal linkage may be contained within an acid-cleavable substituent RCL in the first olefinic monomer. A method for using the photoresist compositions containing these polymers in preparing a patterned substrate is also provided in which the polymer is rendered soluble in aqueous base at a temperature of less than about 100° C. by acid-catalyzed deprotection of pendent acetal- or ketal-protected carboxylic acid groups.

    摘要翻译: 提供了含有缩醛或缩酮键的聚合物及其在平版光刻胶组合物中的用途,特别是在化学放大光致抗蚀剂中。 聚合物由至少一种含有缩醛或缩酮键的第一烯属单体制备,其酸催化裂解使聚合物可溶于碱水溶液; 和至少一种第二烯烃单体,其选自(i)含有侧氟化羟烷基R H的烯烃单体,(ii)含有侧氟化烷基磺酰胺基R S的烯属单体, SUP),和(iii)其组合。 缩醛或缩酮键可以包含在第一烯烃单体中的酸可裂解取代基R CL中。 还提供了一种使用含有这些聚合物的光致抗蚀剂组合物来制备图案化基材的方法,其中聚合物在低于约100℃的温度下可溶于碱水溶液,通过酸催化的侧链缩醛或缩酮脱保护 保护的羧酸基团。