公开(公告)号：US06140215A

公开(公告)日：2000-10-31

申请号：US615453

申请日：1996-03-14

申请人： Robert F. Foster ,  Joseph T. Hillman ,  Rikhit Arora

发明人： Robert F. Foster ,  Joseph T. Hillman ,  Rikhit Arora

IPC分类号： C23C16/44 ,  C23C16/455 ,  C23C16/458 ,  C23C16/50 ,  C23C16/509 ,  H01L21/205 ,  H01L21/285 ,  H01L21/20

CPC分类号： C23C16/45565 ,  C23C16/4417 ,  C23C16/45504 ,  C23C16/4558 ,  C23C16/4584 ,  C23C16/509 ,  C23C16/5096 ,  Y10S438/935

摘要： Method and apparatus are disclosed for low temperature deposition of CVD and PECVD films utilizing a gas-dispersing showerhead position within one inch of a rotating substrate. The showerhead is positioned a suitable distance below a gas-dispensing apparatus such as a steady stay flow of gas develops between the ring and showerhead. A cylindrical structure extends between the gas-dispersing ring and a showerhead to contain the gas over the showerhead yielding a small boundary layer over the substrate to ensure efficient uniform deposition of a film on a substrate surface. In the one embodiment of the present invention the showerhead is bias with RF energy such that it acts as an electrode to incite a plasma proximate with the substrate for PECVD. The cylinder is isolated from the showerhead such as by a quartz insulator ring to prevent ignition of a plasma within the cylinder, or alternatively, the cylinder is fabricated of quartz material. The RF showerhead utilizes small gas-dispersing holes to further prevent ignition of a plasma within the cylinder. The very small showerhead-to-substrate spacing and the efficient delivery of the plasma and reacting gases produces low temperature CVD and PECVD of films on the substrate.

摘要翻译： 公开了利用在旋转衬底的1英寸内的气体分散喷头位置的CVD和PECVD膜的低温沉积的方法和装置。 喷头位于气体分配装置下方适当的距离处，例如在环和喷头之间产生稳定的气流。 圆柱形结构在气体分散环和喷头之间延伸，以将气体容纳在喷头上，在衬底上产生小的边界层，以确保膜在衬底表面上的有效均匀沉积。 在本发明的一个实施例中，喷头是具有RF能量的偏压，使得其用作电极以煽动等离子体与衬底接近PECVD。 气缸与喷头隔开，例如通过石英绝缘环，以防止气缸内的等离子体点燃，或者，气缸由石英材料制成。 射频淋浴头采用小型气体分散孔，以进一步防止气缸内的等离子体点火。 非常小的喷头间距和等离子体和反应气体的有效输送在基板上产生薄膜的低温CVD和PECVD。

公开(公告)号：US5610106A

公开(公告)日：1997-03-11

申请号：US401859

申请日：1995-03-10

申请人： Robert F. Foster ,  Joseph T. Hillman ,  Rikhit Arora

发明人： Robert F. Foster ,  Joseph T. Hillman ,  Rikhit Arora

IPC分类号： C23C16/34 ,  H01L21/768 ,  H01L21/465 ,  H01L21/441

CPC分类号： H01L21/76843 ,  C23C16/34 ,  H01L21/76838

摘要： A method of forming a titanium nitride film onto a semi-conductor substrate includes forming a plasma of a reactant gas mixture. The reactant gas mixture includes titanium tetrachloride, ammonia and nitrogen. The ratio of nitrogen to ammonia is established at about 10:1 to about 10,000:1 and the partial pressure of titanium tetrachloride is established to ensure formation of titanium nitride. The plasma is contacted to a substrate heated to a temperature of 400.degree. C. to about 500.degree. C. This provides a high purity titanium nitride film with excellent conformality at temperatures which will not interfere with integrated circuits having previously-deposited aluminum members.

摘要翻译： 在半导体基板上形成氮化钛膜的方法包括形成反应气体混合物的等离子体。 反应气体混合物包括四氯化钛，氨和氮气。 氮与氨的比例确定为约10:1至约10,000:1，并确定了四氯化钛的分压以确保形成氮化钛。 将等离子体与加热至400℃至约500℃的衬底接触。这提供了在不会干扰具有先前沉积的铝构件的集成电路的温度下具有优异共形性的高纯度氮化钛膜。

公开(公告)号：US5628829A

公开(公告)日：1997-05-13

申请号：US253714

申请日：1994-06-03

申请人： Robert F. Foster ,  Joseph T. Hillman ,  Rikhit Arora

发明人： Robert F. Foster ,  Joseph T. Hillman ,  Rikhit Arora

IPC分类号： C23C16/44 ,  C23C16/455 ,  C23C16/458 ,  C23C16/50 ,  C23C16/509 ,  H01L21/205 ,  H01L21/285 ,  C23C16/00

CPC分类号： C23C16/45565 ,  C23C16/4417 ,  C23C16/45504 ,  C23C16/4558 ,  C23C16/4584 ,  C23C16/509 ,  C23C16/5096 ,  Y10S438/935

摘要： Method and apparatus are disclosed for low temperature deposition of CVD and PECVD films utilizing a gas-dispersing showerhead position within one inch of a rotating substrate. The showerhead is positioned a suitable distance below a gas-dispensing apparatus such as a steady stay flow of gas develops between the ring and showerhead. A cylindrical structure extends between the gas-dispersing ring and a showerhead to contain the gas over the showerhead yielding a small boundary layer over the substrate to ensure efficient uniform deposition of a film on a substrate surface. In the one embodiment of the present invention the showerhead is bias with RF energy such that it acts as an electrode to incite a plasma proximate with the substrate for PECVD. The cylinder is isolated from the showerhead such as by a quartz insulator ring to prevent ignition of a plasma within the cylinder, or alternatively, the cylinder is fabricated of zquartz material. The RF showerhead utilizes small gas-dispersing holes to further prevent ignition of a plasma within the cylinder. The very small showerhead-to-substrate spacing and the efficient delivery of the plasma and reacting gases produces low temperature CVD and PECVD of films on the substrate.

摘要翻译： 公开了利用在旋转衬底的1英寸内的气体分散喷头位置的CVD和PECVD膜的低温沉积的方法和装置。 喷头位于气体分配装置下方适当的距离处，例如在环和喷头之间产生稳定的气流。 圆柱形结构在气体分散环和喷头之间延伸，以将气体容纳在喷头上，在衬底上产生小的边界层，以确保膜在衬底表面上的有效均匀沉积。 在本发明的一个实施例中，喷头是具有RF能量的偏压，使得其用作电极以煽动等离子体与衬底接近PECVD。 气缸与喷头隔离，例如通过石英绝缘环，以防止气缸内的等离子体点火，或者圆筒由锆石材料制成。 射频淋浴头采用小型气体分散孔，以进一步防止气缸内的等离子体点火。 非常小的喷头间距和等离子体和反应气体的有效输送在基板上产生薄膜的低温CVD和PECVD。

公开(公告)号：US5567483A

公开(公告)日：1996-10-22

申请号：US461665

申请日：1995-06-05

申请人： Robert F. Foster ,  Joseph T. Hillman ,  Rikhit Arora

发明人： Robert F. Foster ,  Joseph T. Hillman ,  Rikhit Arora

IPC分类号： C23C16/56 ,  H01L21/28 ,  H01L21/285 ,  H01L21/321 ,  H05H1/00

CPC分类号： H01L21/321

摘要： A titanium nitride film is annealed at a temperature less than 500.degree. C. by subjecting said titanium nitride film to an RF created plasma generated from a nitrogen-containing gas in a rotating susceptor reactor. The formed film is comparable to a thin film annealed at significantly higher temperatures, making this process useful for integrated circuits containing aluminum elements.

摘要翻译： 通过在旋转的感受器反应器中对氮化钛膜进行由含氮气体产生的RF产生的等离子体，在低于500℃的温度下对氮化钛膜进行退火。 所形成的膜与在显着更高的温度下退火的薄膜相当，使得该工艺对含有铝元素的集成电路是有用的。

公开(公告)号：US5273588A

公开(公告)日：1993-12-28

申请号：US898560

申请日：1992-06-15

申请人： Robert F. Foster ,  Helen E. Rebenne ,  Rene E. LeBlanc ,  Carl L. White ,  Rikhit Arora

发明人： Robert F. Foster ,  Helen E. Rebenne ,  Rene E. LeBlanc ,  Carl L. White ,  Rikhit Arora

IPC分类号： C23C16/14 ,  C23C16/44 ,  C23C16/455 ,  C23C16/48 ,  C23C16/54 ,  H01J37/32 ,  H01L21/00 ,  H01L21/205 ,  H01L21/31 ,  H01L21/683 ,  C23C16/50

CPC分类号： H01L21/67103 ,  C23C16/455 ,  C23C16/54 ,  H01J37/32082 ,  H01J37/3244 ,  H01J37/32449 ,  H01J37/32862 ,  H01L21/6838

摘要： A semiconductor wafer processing apparatus, particularly a CVD reactor, is provided with plasma cleaning electrodes integrated into process gas flow shaping structure that smoothly directs the gas past the wafer on a susceptor. The processing apparatus preferably has a showerhead or other inlet to direct a gas mixture onto a wafer and a plurality of baffles to reduce turbulence. Plasma cleaning electrodes are included in the baffles or the showerhead or both, one or more of which preferably have cleaning gas outlet orifices therein, preferably evenly distributed around the axis of the susceptor to provide uniform cleaning gas flow.

摘要翻译： 半导体晶片处理装置，特别是CVD反应器设置有集成在工艺气流成形结构中的等离子体清洁电极，其将气体平滑地引导到基座上的晶片。 处理装置优选地具有喷头或其他入口以将气体混合物引导到晶片和多个挡板上以减少湍流。 等离子体清洁电极包括在挡板或喷头或两者中，其中一个或多个优选地具有清洁气体出口孔，优选地均匀分布在基座的轴线上以提供均匀的清洁气体流。

公开(公告)号：US5370739A

公开(公告)日：1994-12-06

申请号：US899826

申请日：1992-06-15

申请人： Robert F. Foster ,  Helen E. Rebenne ,  Rene E. LeBlanc ,  Carl L. White ,  Rikhit Arora

发明人： Robert F. Foster ,  Helen E. Rebenne ,  Rene E. LeBlanc ,  Carl L. White ,  Rikhit Arora

IPC分类号： C23C16/14 ,  C23C16/44 ,  C23C16/455 ,  C23C16/458 ,  C23C16/46 ,  C23C16/48 ,  C23C16/54 ,  H01L21/285 ,  H01L21/683 ,  C23C16/00

CPC分类号： C23C16/45565 ,  C23C16/4412 ,  C23C16/455 ,  C23C16/45508 ,  C23C16/45521 ,  C23C16/4584 ,  C23C16/46 ,  C23C16/466 ,  C23C16/54 ,  H01L21/6838

摘要： A semiconductor wafer processing apparatus or module for a cluster tool is provided with a single wafer rotating susceptor that thins the gas boundary layer to facilitate the transfer of material to or from the wafer, in, for example, CVD for blanket or selective deposition of tungsten or titanium nitride, and degassing and annealing processes. Preferably, a downwardly facing showerhead directs a gas mixture from a cooled mixing chamber onto a rapidly rotating wafer, for example at from 500 to 1500 RPM, thinning a boundary layer for gas flowing radially outwardly from a stagnation point at the wafer center. Smoothly shaped interior reactor surfaces include baffles and plasma cleaning electrodes to minimize turbulence. Inert gases from within the rotating susceptor minimize turbulence by filling gaps in structure, prevent contamination of moving parts, conduct heat between the susceptor and the wafer, and vacuum clamp the wafer to the susceptor. A susceptor lip surrounds the wafer and is removable for cleaning, to accommodate different size wafers, and allows change of lip materials to for different processes, such as, one which will resist deposits during selective CVD, or one which scavenges unspent gases in blanket CVD. The lip smooths gas flow, reduces thermal gradients at the wafer edge.

摘要翻译： 用于集群工具的半导体晶片处理装置或模块设置有单个晶片旋转基座，其使气体边界层变薄，以便于将材料转移到晶片或从晶片转移，例如用于覆盖或选择性沉积钨的CVD 或氮化钛，以及脱气和退火工艺。 优选地，面向下的喷头将来自冷却的混合室的气体混合物引导到快速旋转的晶片上，例如以500至1500RPM，从而在晶片中心的停滞点径向向外流动的气体的边界层变薄。 平滑形状的内部反应器表面包括挡板和等离子体清洁电极，以最小化湍流。 来自旋转基座内的惰性气体通过填充结构间隙来最小化湍流，防止运动部件的污染，在基座和晶片之间传导热量，并将晶片真空夹紧到基座。 感受体唇缘围绕晶片并且可移除以用于清洁，以适应不同尺寸的晶片，并且允许将唇缘材料改变为用于不同过程的唇缘材料，例如在选择性CVD期间将抵抗沉积物的唇缘材料，或者在毯式CVD中清除未使用气体的那些 。 唇缘平滑气流，降低了晶片边缘的热梯度。

公开(公告)号：US5356476A

公开(公告)日：1994-10-18

申请号：US898800

申请日：1992-06-15

申请人： Robert F. Foster ,  Helen E. Rebenne ,  Rene E. LeBlanc ,  Carl L. White ,  Rikhit Arora

发明人： Robert F. Foster ,  Helen E. Rebenne ,  Rene E. LeBlanc ,  Carl L. White ,  Rikhit Arora

IPC分类号： H01L21/205 ,  C23C16/14 ,  C23C16/34 ,  C23C16/44 ,  C23C16/455 ,  C23C16/458 ,  C23C16/46 ,  C23C16/54 ,  H01L21/00 ,  C23C16/00

CPC分类号： C23C16/45565 ,  C23C16/14 ,  C23C16/34 ,  C23C16/4401 ,  C23C16/4405 ,  C23C16/455 ,  C23C16/45502 ,  C23C16/45512 ,  C23C16/45521 ,  C23C16/45591 ,  C23C16/4584 ,  C23C16/46 ,  C23C16/466 ,  C23C16/54 ,  H01L21/67109

摘要： A semiconductor wafer processing apparatus is provided with a susceptor for supporting a wafer for CVD of films such as blanket or selective deposition of tungsten or titanium nitride, and degassing and annealing processes. Preferably, a downwardly facing showerhead directs a gas mixture from a cooled mixing chamber onto an upwardly facing wafer on the susceptor. Smooth interior reactor surfaces include baffles and a susceptor lip and wall shaped to minimize turbulence. Inert gases flow to minimize turbulence by filling gaps in susceptor structure, prevent contamination of moving parts, conduct heat between the susceptor and the wafer, and vacuum clamp the wafer to the susceptor. A susceptor lip surrounds the wafer and is removable for cleaning, to accommodate different size wafers, and allows change of lip materials to for different processes, such as, one which will resist deposits during selective CVD, or one which scavenges unspent gases in blanket CVD. The lip smooths gas flow, reduces thermal gradients at the wafer edge. The susceptor design reduces heat flow from the susceptor to other reactor parts by conduction or radiation.

摘要翻译： 半导体晶片处理装置设置有用于支撑诸如覆盖或选择性沉积钨或氮化钛的膜的CVD晶片的基座，以及脱气和退火工艺。 优选地，面向下的喷头将来自冷却的混合室的气体混合物引导到基座上的朝上的晶片上。 平滑的内部反应器表面包括挡板和基座唇缘和壁形，以最小化湍流。 惰性气体通过填充基座结构中的间隙来减少湍流，防止运动部件的污染，在基座和晶片之间传导热量，并将晶片真空夹紧到基座。 感受体唇缘围绕晶片并且可移除以用于清洁，以适应不同尺寸的晶片，并且允许将唇缘材料改变为用于不同过程的唇缘材料，例如在选择性CVD期间将抵抗沉积物的唇缘材料，或者在毯式CVD中清除未使用气体的那些 。 唇缘平滑气流，降低了晶片边缘的热梯度。 基座设计通过传导或辐射减少从基座到其他反应器部件的热流。

公开(公告)号：US5866213A

公开(公告)日：1999-02-02

申请号：US899500

申请日：1997-07-19

申请人： Robert F. Foster ,  Joseph T. Hillman ,  Rene E. LeBlanc

发明人： Robert F. Foster ,  Joseph T. Hillman ,  Rene E. LeBlanc

IPC分类号： C23C16/50 ,  C23C16/00 ,  C23C16/04 ,  C23C16/14 ,  C23C16/30 ,  C23C16/34 ,  C23C16/42 ,  C23C16/44 ,  C23C16/452 ,  C23C16/455 ,  C23C16/458 ,  C23C16/509 ,  C23C16/56 ,  H01L21/205 ,  H01L21/28 ,  H01L21/285 ,  H01L51/30 ,  B05D3/06

CPC分类号： C23C16/45504 ,  C23C16/04 ,  C23C16/045 ,  C23C16/14 ,  C23C16/34 ,  C23C16/42 ,  C23C16/452 ,  C23C16/455 ,  C23C16/45565 ,  C23C16/4584 ,  C23C16/5096 ,  H01L21/28556

摘要： A method for depositing a film on a substrate by plasma-enhanced chemical vapor deposition at temperatures substantially lower than conventional thermal CVD temperatures comprises placing a substrate within a reaction chamber and exciting a first gas upstream of the substrate to generate activated radicals of the first gas. The substrate is rotated within the deposition chamber to create a pumping action which draws the gas mixture of first gas radicals to the substrate surface. A second gas is supplied proximate the substrate to mix with the activated radicals of the first gas and the mixture produces a surface reaction at the substrate to deposit a film. The pumping action draws the gas mixture down to the substrate surface in a laminar flow to reduce recirculation and radical recombination such that a sufficient amount of radicals are available at the substrate surface to take part in the surface reaction. Another method utilizes a gas-dispersing showerhead that is biased with RF energy to form an electrode which generates activated radicals and ions in a concentrated plasma close to the substrate surface. The activated plasma gas radicals and ions utilized in the invention contribute energy to the surface reaction such that the film may be deposited at a substantially lower deposition temperature that is necessary for traditional thermal CVD techniques. Furthermore, the activation of these species reduces the temperature needed to complete the surface reaction. The method is particularly useful in depositing titanium-containing films at low temperatures.

摘要翻译： 通过在基本上低于常规热CVD温度的温度下通过等离子体增强化学气相沉积在衬底上沉积膜的方法包括将衬底放置在反应室内并激发衬底上游的第一气体以产生第一气体的活性自由基 。 衬底在沉积室内旋转以产生泵送作用，其将第一气体自由基的气体混合物吸引到衬底表面。 第二气体靠近衬底供应以与第一气体的活化自由基混合，并且混合物在衬底处产生表面反应以沉积膜。 泵送动作以层流将气体混合物下拉到衬底表面以减少再循环和自由基重组，使得在衬底表面上可以获得足够量的自由基参与表面反应。 另一种方法利用用RF能量偏置的气体分散喷头，以形成在靠近基板表面的浓缩等离子体中产生活化的自由基和离子的电极。 在本发明中使用的激活的等离子体气体自由基和离子向表面反应贡献能量，使得膜可以以传统热CVD技术所需的基本上较低的沉积温度沉积。 此外，这些物质的活化降低了完成表面反应所需的温度。 该方法特别适用于在低温下沉积含钛膜。

公开(公告)号：US06221770B1

公开(公告)日：2001-04-24

申请号：US09364020

申请日：1999-07-30

申请人： Joseph T. Hillman ,  Robert F. Foster

发明人： Joseph T. Hillman ,  Robert F. Foster

IPC分类号： H01L2144

CPC分类号： C23C8/02 ,  C23C8/36 ,  C23C16/02 ,  C23C16/34

摘要： Using plasma enhanced chemical vapor deposition, various layers can be deposited on semiconductor substrates at low temperatures in the same reactor. When a titanium nitride film is required, a titanium film can be initially deposited using a plasma enhanced chemical vapor deposition wherein the plasma is created within 25 mm of the substrate surface, supplying a uniform plasma across the surface. The deposited film can be subjected to an ammonia anneal, again using a plasma of ammonia created within 25 mm of the substrate surface, followed by the plasma enhanced chemical vapor deposition of titanium nitride by creating a plasma of titanium tetrachloride and ammonia within 25 mm of the substrate surface. This permits deposition film and annealing at relatively low temperatures—less than 800° C. When titanium is so deposited over a silicon surface, titanium silicide will form at the juncture which then can be nitrided and coated with titanium or titanium nitride using the plasma enhanced chemical vapor deposition of the present invention. Thus, the present method permits the formation of multiple layers of titanium, titanium nitride, titanium silicide over the surface of the substrate in the same reactor.

摘要翻译： 使用等离子体增强化学气相沉积，可以在同一反应器中的低温下将各种层沉积在半导体衬底上。 当需要氮化钛膜时，可以使用等离子体增强化学气相沉积来初始沉积钛膜，其中在衬底表面的25mm内产生等离子体，在整个表面上提供均匀的等离子体。 沉积的膜可以再次使用在衬底表面的25mm内产生的氨等离子体进行氨退火，然后通过在25mm的内部产生四氯化钛和氨的等离子体增强化学气相沉积氮化钛 基材表面。 这允许沉积膜和在相对低的温度下退火 - 小于800℃。当钛沉积在硅表面上时，钛硅化物将在接合处形成，然后氮化钛可以用钛或氮化钛涂覆，使用等离子体增强 本发明的化学气相沉积。 因此，本方法允许在同一反应器中在衬底的表面上形成多层钛，氮化钛，硅化钛层。

公开(公告)号：US06220202B1

公开(公告)日：2001-04-24

申请号：US09113252

申请日：1998-07-10

申请人： Robert F. Foster ,  Joseph T. Hillman ,  Rene E. LeBlanc

发明人： Robert F. Foster ,  Joseph T. Hillman ,  Rene E. LeBlanc

IPC分类号： C23C1600

CPC分类号： C23C16/45504 ,  C23C16/04 ,  C23C16/045 ,  C23C16/14 ,  C23C16/34 ,  C23C16/42 ,  C23C16/452 ,  C23C16/455 ,  C23C16/45565 ,  C23C16/4584 ,  C23C16/5096 ,  H01L21/28556

摘要： A method and apparatus for depositing a film on a substrate by plasma-enhanced chemical vapor deposition at temperatures substantially lower than conventional thermal CVD temperatures comprises placing a substrate within a reaction chamber and exciting a first gas upstream of the substrate to generate activated radicals of the first gas. The substrate is rotated within the deposition chamber to create a pumping action which draws the gas mixture of first gas radicals to the substrate surface. A second gas is supplied proximate the substrate to mix with the activated radicals of the first gas and the mixture produces a surface reaction at the substrate to deposit a film. The pumping action draws the gas mixture down to the substrate surface in a laminar flow to reduce recirculation and radical recombination such that a sufficient amount of radicals are available at the substrate surface to take part in the surface reaction. Another method utilizes a gas-dispersing showerhead that is biased with RF energy to form an electrode which generates activated radicals and ions in a concentrated plasma close to the substrate surface. The activated plasma gas radicals and ions utilized in the invention contribute energy to the surface reaction such that the film may be deposited at a substantially lower deposition temperature that is necessary for traditional thermal CVD techniques. Furthermore, the activation of these species reduces the temperature needed to complete the surface reaction. The method is particularly useful in depositing titanium-containing films at low temperatures.

摘要翻译： 一种用于在基本上低于常规热CVD温度的温度下通过等离子体增强化学气相沉积在衬底上沉积膜的方法和装置包括将衬底放置在反应室内并激发衬底上游的第一气体以产生 第一气。 衬底在沉积室内旋转以产生泵送作用，其将第一气体自由基的气体混合物吸引到衬底表面。 第二气体靠近衬底供应以与第一气体的活化自由基混合，并且混合物在衬底处产生表面反应以沉积膜。 泵送动作将层叠流体中的气体混合物下拉到衬底表面以减少再循环和自由基复合，使得在衬底表面上可以获得足够量的自由基来参与表面反应。 另一种方法利用用RF能量偏置的气体分散喷头，以形成在靠近基板表面的浓缩等离子体中产生活化的自由基和离子的电极。 在本发明中使用的激活的等离子体气体自由基和离子向表面反应贡献能量，使得膜可以以传统热CVD技术所需的基本上较低的沉积温度沉积。 此外，这些物质的活化降低了完成表面反应所需的温度。 该方法特别适用于在低温下沉积含钛膜。