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公开(公告)号：US08501547B2
公开(公告)日：2013-08-06
申请号：US13567366
申请日：2012-08-06
申请人： Robert J. Greenberg , Neil Hamilton Talbot , Jordan Matthew Neysmith , Jerry Ok , Honggang Jiang
发明人： Robert J. Greenberg , Neil Hamilton Talbot , Jordan Matthew Neysmith , Jerry Ok , Honggang Jiang
IPC分类号： H01L21/56
CPC分类号： A61N1/375 , A61N1/3754 , H01L23/291 , H01L23/3107 , H01L24/03 , H01L24/05 , H01L24/12 , H01L24/85 , H01L2224/0345 , H01L2224/0347 , H01L2224/0401 , H01L2224/05083 , H01L2224/05124 , H01L2224/05147 , H01L2224/05164 , H01L2224/05166 , H01L2224/05187 , H01L2224/05624 , H01L2224/05647 , H01L2224/13099 , H01L2224/13164 , H01L2224/13169 , H01L2224/85 , H01L2924/00014 , H01L2924/01005 , H01L2924/01006 , H01L2924/01013 , H01L2924/01014 , H01L2924/01015 , H01L2924/01018 , H01L2924/01019 , H01L2924/01022 , H01L2924/01024 , H01L2924/01027 , H01L2924/01028 , H01L2924/01029 , H01L2924/01033 , H01L2924/01041 , H01L2924/01046 , H01L2924/01047 , H01L2924/01077 , H01L2924/01078 , H01L2924/01079 , H01L2924/04941 , H01L2924/10253 , H01L2924/12042 , H01L2924/14 , H01L2924/1433 , H01L2924/351 , H01L2924/04953 , H01L2924/00 , H01L2224/48 , H01L2224/45015 , H01L2924/207 , H01L2224/45099
摘要： An implantable hermetically sealed microelectronic device and method of manufacture are disclosed. The microelectronic device of the present invention is hermetically encased in a insulator, such as alumina formed by ion bean assisted deposition (“IBAD”), with a stack of biocompatible conductive layers extending from a contact pad on the device to an aperture in the hermetic layer. In a preferred embodiment, one or more patterned titanium layers are formed over the device contact pad, and one or more platinum layers are formed over the titanium layers, such that the top surface of the upper platinum layer defines an external, biocompatible electrical contact for the device. Preferably, the bottom conductive layer is larger than the contact pad on the device, and a layer in the stack defines a shoulder.
摘要翻译： 公开了可植入气密微电子器件及其制造方法。 本发明的微电子器件气密地封装在诸如由离子豆辅助沉积（“IBAD”）形成的氧化铝之类的绝缘体中，一堆生物相容的导电层从器件上的接触垫延伸到密封的孔 层。 在优选实施例中，在器件接触焊盘上形成一个或多个图案化的钛层，并且在钛层上形成一个或多个铂层，使得上铂层的顶表面限定外部的生物相容的电接触， 装置。 优选地，底部导电层大于器件上的接触焊盘，并且堆叠中的层限定了肩部。
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公开(公告)号：US20120309134A1
公开(公告)日：2012-12-06
申请号：US13567366
申请日：2012-08-06
申请人： Robert J Greenberg , Neil Hamilton Talbot , Jordan Matthew Neysmith , Jerry Ok , Honggang Jiang
发明人： Robert J Greenberg , Neil Hamilton Talbot , Jordan Matthew Neysmith , Jerry Ok , Honggang Jiang
IPC分类号： H01L21/56
CPC分类号： A61N1/375 , A61N1/3754 , H01L23/291 , H01L23/3107 , H01L24/03 , H01L24/05 , H01L24/12 , H01L24/85 , H01L2224/0345 , H01L2224/0347 , H01L2224/0401 , H01L2224/05083 , H01L2224/05124 , H01L2224/05147 , H01L2224/05164 , H01L2224/05166 , H01L2224/05187 , H01L2224/05624 , H01L2224/05647 , H01L2224/13099 , H01L2224/13164 , H01L2224/13169 , H01L2224/85 , H01L2924/00014 , H01L2924/01005 , H01L2924/01006 , H01L2924/01013 , H01L2924/01014 , H01L2924/01015 , H01L2924/01018 , H01L2924/01019 , H01L2924/01022 , H01L2924/01024 , H01L2924/01027 , H01L2924/01028 , H01L2924/01029 , H01L2924/01033 , H01L2924/01041 , H01L2924/01046 , H01L2924/01047 , H01L2924/01077 , H01L2924/01078 , H01L2924/01079 , H01L2924/04941 , H01L2924/10253 , H01L2924/12042 , H01L2924/14 , H01L2924/1433 , H01L2924/351 , H01L2924/04953 , H01L2924/00 , H01L2224/48 , H01L2224/45015 , H01L2924/207 , H01L2224/45099
摘要： An implantable hermetically sealed microelectronic device and method of manufacture are disclosed. The microelectronic device of the present invention is hermetically encased in a insulator, such as alumina formed by ion bean assisted deposition (“IBAD”), with a stack of biocompatible conductive layers extending from a contact pad on the device to an aperture in the hermetic layer. In a preferred embodiment, one or more patterned titanium layers are formed over the device contact pad, and one or more platinum layers are formed over the titanium layers, such that the top surface of the upper platinum layer defines an external, biocompatible electrical contact for the device. Preferably, the bottom conductive layer is larger than the contact pad on the device, and a layer in the stack defines a shoulder.
摘要翻译： 公开了可植入气密微电子器件及其制造方法。 本发明的微电子器件气密地封装在诸如由离子豆辅助沉积（IBAD）形成的氧化铝之类的绝缘体中，并且具有从器件上的接触焊盘延伸到密封层中的孔的生物相容性导电层的堆叠。 在优选实施例中，在器件接触焊盘上形成一个或多个图案化的钛层，并且在钛层上形成一个或多个铂层，使得上铂层的顶表面限定外部的生物相容的电接触， 装置。 优选地，底部导电层大于器件上的接触焊盘，并且堆叠中的层限定了肩部。
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公开(公告)号：US08258635B2
公开(公告)日：2012-09-04
申请号：US12726274
申请日：2010-03-17
申请人： Robert J. Greenberg , Neil Hamilton Talbot , Jordan Matthew Neysmith , Jerry Ok , Honggang Jiang
发明人： Robert J. Greenberg , Neil Hamilton Talbot , Jordan Matthew Neysmith , Jerry Ok , Honggang Jiang
IPC分类号： H01L23/29
CPC分类号： A61N1/375 , A61N1/3754 , H01L23/291 , H01L23/3107 , H01L24/03 , H01L24/05 , H01L24/12 , H01L24/85 , H01L2224/0345 , H01L2224/0347 , H01L2224/0401 , H01L2224/05083 , H01L2224/05124 , H01L2224/05147 , H01L2224/05164 , H01L2224/05166 , H01L2224/05187 , H01L2224/05624 , H01L2224/05647 , H01L2224/13099 , H01L2224/13164 , H01L2224/13169 , H01L2224/85 , H01L2924/00014 , H01L2924/01005 , H01L2924/01006 , H01L2924/01013 , H01L2924/01014 , H01L2924/01015 , H01L2924/01018 , H01L2924/01019 , H01L2924/01022 , H01L2924/01024 , H01L2924/01027 , H01L2924/01028 , H01L2924/01029 , H01L2924/01033 , H01L2924/01041 , H01L2924/01046 , H01L2924/01047 , H01L2924/01077 , H01L2924/01078 , H01L2924/01079 , H01L2924/04941 , H01L2924/10253 , H01L2924/12042 , H01L2924/14 , H01L2924/1433 , H01L2924/351 , H01L2924/04953 , H01L2924/00 , H01L2224/48 , H01L2224/45015 , H01L2924/207 , H01L2224/45099
摘要： An implantable hermetically sealed microelectronic device and method of manufacture are disclosed. The microelectronic device of the present invention is hermetically encased in a insulator, such as alumina formed by ion bean assisted deposition (“IBAD”), with a stack of biocompatible conductive layers extending from a contact pad on the device to an aperture in the hermetic layer. In a preferred embodiment, one or more patterned titanium layers are formed over the device contact pad, and one or more platinum layers are formed over the titanium layers, such that the top surface of the upper platinum layer defines an external, biocompatible electrical contact for the device. Preferably, the bottom conductive layer is larger than the contact pad on the device, and a layer in the stack defines a shoulder.
摘要翻译： 公开了可植入气密微电子器件及其制造方法。 本发明的微电子器件气密地封装在诸如由离子豆辅助沉积（“IBAD”）形成的氧化铝之类的绝缘体中，一堆生物相容的导电层从器件上的接触垫延伸到密封的孔 层。 在优选实施例中，在器件接触焊盘上形成一个或多个图案化的钛层，并且在钛层上形成一个或多个铂层，使得上铂层的顶表面限定外部的生物相容的电接触， 装置。 优选地，底部导电层大于器件上的接触焊盘，并且堆叠中的层限定了肩部。
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公开(公告)号：US07709961B2
公开(公告)日：2010-05-04
申请号：US11924486
申请日：2007-10-25
申请人： Robert J. Greenberg , Neil Hamilton Talbot , Jordan Matthew Neysmith , Jerry Ok , Honggang Jiang
发明人： Robert J. Greenberg , Neil Hamilton Talbot , Jordan Matthew Neysmith , Jerry Ok , Honggang Jiang
IPC分类号： H01L29/40
CPC分类号： A61N1/375 , A61N1/3754 , H01L23/291 , H01L23/3107 , H01L24/03 , H01L24/05 , H01L24/12 , H01L24/85 , H01L2224/0345 , H01L2224/0347 , H01L2224/0401 , H01L2224/05083 , H01L2224/05124 , H01L2224/05147 , H01L2224/05164 , H01L2224/05166 , H01L2224/05187 , H01L2224/05624 , H01L2224/05647 , H01L2224/13099 , H01L2224/13164 , H01L2224/13169 , H01L2224/85 , H01L2924/00014 , H01L2924/01005 , H01L2924/01006 , H01L2924/01013 , H01L2924/01014 , H01L2924/01015 , H01L2924/01018 , H01L2924/01019 , H01L2924/01022 , H01L2924/01024 , H01L2924/01027 , H01L2924/01028 , H01L2924/01029 , H01L2924/01033 , H01L2924/01041 , H01L2924/01046 , H01L2924/01047 , H01L2924/01077 , H01L2924/01078 , H01L2924/01079 , H01L2924/04941 , H01L2924/10253 , H01L2924/12042 , H01L2924/14 , H01L2924/1433 , H01L2924/351 , H01L2924/04953 , H01L2924/00 , H01L2224/48 , H01L2224/45015 , H01L2924/207 , H01L2224/45099
摘要： An implantable hermetically sealed microelectronic device and method of manufacture are disclosed. The microelectronic device of the present invention is hermetically encased in a insulator, such as alumina formed by ion bean assisted deposition (“IBAD”), with a stack of biocompatible conductive layers extending from a contact pad on the device to an aperture in the hermetic layer. In a preferred embodiment, one or more patterned titanium layers are formed over the device contact pad, and one or more platinum layers are formed over the titanium layers, such that the top surface of the upper platinum layer defines an external, biocompatible electrical contact for the device. Preferably, the bottom conductive layer is larger than the contact pad on the device, and a layer in the stack defines a shoulder.
摘要翻译： 公开了可植入气密微电子器件及其制造方法。 本发明的微电子器件气密地封装在诸如由离子豆辅助沉积（“IBAD”）形成的氧化铝之类的绝缘体中，一堆生物相容的导电层从器件上的接触垫延伸到密封的孔 层。 在优选实施例中，在器件接触焊盘上形成一个或多个图案化的钛层，并且在钛层上形成一个或多个铂层，使得上铂层的顶表面限定外部的生物相容的电接触， 装置。 优选地，底部导电层大于器件上的接触焊盘，并且堆叠中的层限定了肩部。
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公开(公告)号：US20100197082A1
公开(公告)日：2010-08-05
申请号：US12726274
申请日：2010-03-17
申请人： Robert J. Greenberg , Neil Hamilton Talbot , Jordan Matthew Neysmith , Jerry Ok , Honggang Jiang
发明人： Robert J. Greenberg , Neil Hamilton Talbot , Jordan Matthew Neysmith , Jerry Ok , Honggang Jiang
IPC分类号： H01L21/56
CPC分类号： A61N1/375 , A61N1/3754 , H01L23/291 , H01L23/3107 , H01L24/03 , H01L24/05 , H01L24/12 , H01L24/85 , H01L2224/0345 , H01L2224/0347 , H01L2224/0401 , H01L2224/05083 , H01L2224/05124 , H01L2224/05147 , H01L2224/05164 , H01L2224/05166 , H01L2224/05187 , H01L2224/05624 , H01L2224/05647 , H01L2224/13099 , H01L2224/13164 , H01L2224/13169 , H01L2224/85 , H01L2924/00014 , H01L2924/01005 , H01L2924/01006 , H01L2924/01013 , H01L2924/01014 , H01L2924/01015 , H01L2924/01018 , H01L2924/01019 , H01L2924/01022 , H01L2924/01024 , H01L2924/01027 , H01L2924/01028 , H01L2924/01029 , H01L2924/01033 , H01L2924/01041 , H01L2924/01046 , H01L2924/01047 , H01L2924/01077 , H01L2924/01078 , H01L2924/01079 , H01L2924/04941 , H01L2924/10253 , H01L2924/12042 , H01L2924/14 , H01L2924/1433 , H01L2924/351 , H01L2924/04953 , H01L2924/00 , H01L2224/48 , H01L2224/45015 , H01L2924/207 , H01L2224/45099
摘要： An implantable hermetically sealed microelectronic device and method of manufacture are disclosed. The microelectronic device of the present invention is hermetically encased in a insulator, such as alumina formed by ion bean assisted deposition (“IBAD”), with a stack of biocompatible conductive layers extending from a contact pad on the device to an aperture in the hermetic layer. In a preferred embodiment, one or more patterned titanium layers are formed over the device contact pad, and one or more platinum layers are formed over the titanium layers, such that the top surface of the upper platinum layer defines an external, biocompatible electrical contact for the device. Preferably, the bottom conductive layer is larger than the contact pad on the device, and a layer in the stack defines a shoulder.
摘要翻译： 公开了可植入气密微电子器件及其制造方法。 本发明的微电子器件气密地封装在诸如由离子豆辅助沉积（“IBAD”）形成的氧化铝之类的绝缘体中，一堆生物相容的导电层从器件上的接触垫延伸到密封的孔 层。 在优选实施例中，在器件接触焊盘上形成一个或多个图案化的钛层，并且在钛层上形成一个或多个铂层，使得上铂层的顶表面限定外部的生物相容的电接触， 装置。 优选地，底部导电层大于器件上的接触焊盘，并且堆叠中的层限定了肩部。
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公开(公告)号：US09492670B2
公开(公告)日：2016-11-15
申请号：US11923933
申请日：2007-10-25
申请人： Brian Mech , Robert J. Greenberg , Honggang Jiang
发明人： Brian Mech , Robert J. Greenberg , Honggang Jiang
CPC分类号： A61N1/37205 , A61N1/05 , A61N1/372 , A61N1/375 , C23C14/081 , C23C14/28
摘要： An implantable micro-miniature device is disclosed. The device comprises a thin hermetic insulating coating and at least one thin polymer or metal secondary coating over the hermetic insulating layer in order to protect the insulating layer from the erosive action of body fluids or the like. In one embodiment the insulating layer is ion beam assisted deposited (IBAD) alumina and the secondary coating is a parylene polymer. The device may be a small electronic device such as a silicon integrated circuit chip. The thickness of the insulating layer may be ten microns or less and the thickness of the secondary layer may be between about 0.1 and about 15 microns.
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公开(公告)号：US09095722B2
公开(公告)日：2015-08-04
申请号：US11343170
申请日：2006-01-30
申请人： Brian Mech , Robert J. Greenberg , Honggang Jiang
发明人： Brian Mech , Robert J. Greenberg , Honggang Jiang
CPC分类号： A61N1/37205 , A61N1/05 , A61N1/372 , A61N1/375 , C23C14/081 , C23C14/28
摘要： An implantable micro-miniature device is disclosed. The device comprises a thin hermetic insulating coating and at least one thin polymer or metal secondary coating over the hermetic insulating layer in order to protect the insulating layer from the erosive action of body fluids or the like. In one embodiment the insulating layer is ion beam assisted deposited (IBAD) alumina and the secondary coating is a parylene polymer. The device may be a small electronic device such as a silicon integrated circuit chip. The thickness of the insulating layer may be ten microns or less and the thickness of the secondary layer may be between about 0.1 and about 15 microns.
摘要翻译： 公开了一种可植入微型装置。 该装置包括薄的气密绝缘涂层和在密封绝缘层上的至少一个薄聚合物或金属二次涂层，以保护绝缘层免受体液等的侵蚀作用。 在一个实施例中，绝缘层是离子束辅助沉积（IBAD）氧化铝，第二涂层是聚对二甲苯聚合物。 该器件可以是诸如硅集成电路芯片的小型电子器件。 绝缘层的厚度可以为10微米或更小，并且第二层的厚度可以在约0.1至约15微米之间。
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公开(公告)号：US20070096281A1
公开(公告)日：2007-05-03
申请号：US11592487
申请日：2006-11-02
申请人： Robert Greenberg , Neil Talbot , Jordan Neysmith , Jerry Ok , Honggang Jiang
发明人： Robert Greenberg , Neil Talbot , Jordan Neysmith , Jerry Ok , Honggang Jiang
IPC分类号： H01L23/20 , H01L23/10 , H01L23/043 , H01L21/00
CPC分类号： A61N1/375 , A61N1/3754 , H01L23/291 , H01L23/3107 , H01L24/03 , H01L24/05 , H01L24/12 , H01L24/85 , H01L2224/0345 , H01L2224/0347 , H01L2224/0401 , H01L2224/05083 , H01L2224/05124 , H01L2224/05147 , H01L2224/05164 , H01L2224/05166 , H01L2224/05187 , H01L2224/05624 , H01L2224/05647 , H01L2224/13099 , H01L2224/13164 , H01L2224/13169 , H01L2224/85 , H01L2924/00014 , H01L2924/01005 , H01L2924/01006 , H01L2924/01013 , H01L2924/01014 , H01L2924/01015 , H01L2924/01018 , H01L2924/01019 , H01L2924/01022 , H01L2924/01024 , H01L2924/01027 , H01L2924/01028 , H01L2924/01029 , H01L2924/01033 , H01L2924/01041 , H01L2924/01046 , H01L2924/01047 , H01L2924/01077 , H01L2924/01078 , H01L2924/01079 , H01L2924/04941 , H01L2924/10253 , H01L2924/12042 , H01L2924/14 , H01L2924/1433 , H01L2924/351 , H01L2924/04953 , H01L2924/00 , H01L2224/48 , H01L2224/45015 , H01L2924/207 , H01L2224/45099
摘要： An implantable hermetically sealed microelectronic device, and method of manufacture are disclosed. The microelectronic device of the present invention is hermetically encased in a insulator, such as alumina formed by ion bean assisted deposition (“IBAD”), with a stack of biocompatible conductive layers extending from a contact pad on the device to an aperture in the hermetic layer. In a preferred embodiment, one or more patterned titanium layers are formed over the device contact pad, and one or more platinum layers are formed over the titanium layers, such that the top surface of the upper platinum layer defines an external, biocompatible electrical contact for the device. Preferably, the bottom conductive layer is larger than the contact pad on the device, and a layer in the stack defines a shoulder.
摘要翻译： 公开了可植入气密微电子器件及其制造方法。 本发明的微电子器件气密地封装在诸如由离子豆辅助沉积（“IBAD”）形成的氧化铝之类的绝缘体中，一堆生物相容的导电层从器件上的接触垫延伸到密封的孔 层。 在优选实施例中，在器件接触焊盘上形成一个或多个图案化的钛层，并且在钛层上形成一个或多个铂层，使得上铂层的顶表面限定外部的生物相容的电接触， 装置。 优选地，底部导电层大于器件上的接触焊盘，并且堆叠中的层限定了肩部。
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公开(公告)号：US10390441B1
公开(公告)日：2019-08-20
申请号：US12473935
申请日：2009-05-28
申请人： Jerry Ok , Honggang Jiang
发明人： Jerry Ok , Honggang Jiang
摘要： This invention provides methods for processing of platinum metallized high temperature co-fired ceramic (HTCC) components with minimum deleterious reaction between platinum and the glass constituents of the ceramic-glass body. The process comprises co-firing a multilayer laminate green ceramic-glass body with via structures filled with a platinum powder-based material in a reducing atmosphere with a specified level of oxygen partial pressure. The oxygen partial pressure should be maintained above a minimum threshold value for a given temperature level.
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公开(公告)号：US20080048330A1
公开(公告)日：2008-02-28
申请号：US11924486
申请日：2007-10-25
申请人： Robert Greenberg , Neil Talbot , Jordan Neysmith , Jerry Ok , Honggang Jiang
发明人： Robert Greenberg , Neil Talbot , Jordan Neysmith , Jerry Ok , Honggang Jiang
CPC分类号： A61N1/375 , A61N1/3754 , H01L23/291 , H01L23/3107 , H01L24/03 , H01L24/05 , H01L24/12 , H01L24/85 , H01L2224/0345 , H01L2224/0347 , H01L2224/0401 , H01L2224/05083 , H01L2224/05124 , H01L2224/05147 , H01L2224/05164 , H01L2224/05166 , H01L2224/05187 , H01L2224/05624 , H01L2224/05647 , H01L2224/13099 , H01L2224/13164 , H01L2224/13169 , H01L2224/85 , H01L2924/00014 , H01L2924/01005 , H01L2924/01006 , H01L2924/01013 , H01L2924/01014 , H01L2924/01015 , H01L2924/01018 , H01L2924/01019 , H01L2924/01022 , H01L2924/01024 , H01L2924/01027 , H01L2924/01028 , H01L2924/01029 , H01L2924/01033 , H01L2924/01041 , H01L2924/01046 , H01L2924/01047 , H01L2924/01077 , H01L2924/01078 , H01L2924/01079 , H01L2924/04941 , H01L2924/10253 , H01L2924/12042 , H01L2924/14 , H01L2924/1433 , H01L2924/351 , H01L2924/04953 , H01L2924/00 , H01L2224/48 , H01L2224/45015 , H01L2924/207 , H01L2224/45099
摘要： An implantable hermetically sealed microelectronic device and method of manufacture are disclosed. The microelectronic device of the present invention is hermetically encased in a insulator, such as alumina formed by ion bean assisted deposition (“IBAD”), with a stack of biocompatible conductive layers extending from a contact pad on the device to an aperture in the hermetic layer. In a preferred embodiment, one or more patterned titanium layers are formed over the device contact pad, and one or more platinum layers are formed over the titanium layers, such that the top surface of the upper platinum layer defines an external, biocompatible electrical contact for the device. Preferably, the bottom conductive layer is larger than the contact pad on the device, and a layer in the stack defines a shoulder.
摘要翻译： 公开了可植入气密微电子器件及其制造方法。 本发明的微电子器件气密地封装在诸如由离子豆辅助沉积（“IBAD”）形成的氧化铝之类的绝缘体中，其中一堆生物相容的导电层从器件上的接触焊盘延伸到密封的孔 层。 在优选实施例中，在器件接触焊盘上形成一个或多个图案化的钛层，并且在钛层上形成一个或多个铂层，使得上铂层的顶表面限定外部的生物相容的电接触， 装置。 优选地，底部导电层大于器件上的接触焊盘，并且堆叠中的层限定了肩部。
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