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公开(公告)号：US4230997A
公开(公告)日：1980-10-28
申请号：US7429
申请日：1979-01-29
CPC分类号： H01S5/227 , H01S5/2215 , H01S5/2275
摘要： A buried double heterostructure laser device isdescribed. A wafer of double heterostructure material is formed into narrow mesa stripes. A native oxide coating is formed on the side walls of the mesa. Semiconductor material having an index of refraction which is closely matched to the index of the active region is deposited over the mesa structure. High resistivity polycrystalline material forms on the native oxide and monocrystalline material forms on the top of the mesa. Vertical carrier and optical confinement is achieved by the higher bandgap cladding layers of the double heterostructure configuration. The native oxide acts as an electrical insulator to confine pumping current to the mesa. The closely matched polycrystalline material confines light parallel to the junction plane and prevents excitation of higher order transverse modes. Devices have been fabricated which exhibit cw threshold currents at room temperature as low as 55 mA.
摘要翻译： 描述了埋置的双异质结构激光器件。 双异质结构材料的晶片形成窄的台面条纹。 在台面的侧壁上形成天然氧化物涂层。 具有与有源区的折射率紧密匹配的折射率的半导体材料沉积在台面结构上。 在自然氧化物上形成高电阻率多晶材料，在台面的顶部形成单晶材料。 通过双异质结构配置的较高带隙包层实现垂直载流子和光限制。 天然氧化物用作电绝缘体以将泵浦电流限制在台面上。 紧密匹配的多晶材料将光束平行于接合面限制，并防止高阶横模的激发。 已经制造出在室温下低至55mA的cw阈值电流的器件。
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公开(公告)号：US4127862A
公开(公告)日：1978-11-28
申请号：US830438
申请日：1977-09-06
申请人： Marc Ilegems , Louis A. Koszi , Bertram Schwartz
发明人： Marc Ilegems , Louis A. Koszi , Bertram Schwartz
IPC分类号： G02B6/42 , H01L31/101 , H01L31/109 , H04B10/00 , H01L27/14 , H01L29/161
CPC分类号： H04B10/807 , G02B6/4202 , H01L31/101 , H01L31/109 , Y10S257/926
摘要： A plurality n of double heterostructure photodiodes are coupled together by (n-1) interleaved n.sup.+ -p.sup.+ tunnel junctions to form a multi-layered integrated structure which has an open circuit photovoltage approaching the sum of the open circuit photovoltages of the individual photodiodes. In one embodiment, in which radiation to be detected is made incident normal to the layers, the absorbing layers of the photodiodes get progressively thicker away from the substrate. In a second embodiment, in which the radiation is made incident parallel to the layers, all of the absorbing layers have essentially the same thickness. In a third embodiment, in which radiation is made incident normal to the layers, the structure has a stepped configuration and all of the absorbing layers have essentially the same thickness.
摘要翻译： 多个n个双异质结构光电二极管通过（n-1）交错的n + -p +隧道结耦合在一起，以形成多层集成结构，其具有接近各个光电二极管的开路光电压之和的开路光电压。 在一个实施例中，其中要检测的辐射被垂直于层入射，光电二极管的吸收层从衬底逐渐变厚。 在其中使辐射平行于层入射的第二实施例中，所有吸收层具有基本上相同的厚度。 在第三实施例中，其中辐射垂直于层进行辐射，该结构具有阶梯状构造，并且所有吸收层具有基本上相同的厚度。
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公开(公告)号：US4408331A
公开(公告)日：1983-10-04
申请号：US247627
申请日：1981-03-25
CPC分类号： H01S5/2202
摘要： Semiconductor lasers and LEDs are described in which the pumping current is constrained to flow from a relatively narrow upper channel formed by a V-groove, which extends to a depth short of the active region, through a relatively wider lower channel bounded by high resistivity regions, which extend from at least that depth into or through the active region. Also described are devices in which the V-groove is refilled with semiconductor material.
摘要翻译： 描述了半导体激光器和LED，其中泵浦电流被限制为通过由延伸到有源区域的深度的V沟槽形成的相对较窄的上部沟道流过由高电阻率区域限定的相对较宽的下部通道 ，其从至少该深度延伸到或穿过活动区域。 还描述了使用半导体材料重新填充V形槽的装置。
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4.发明授权Method of improving current confinement in semiconductor lasers by inert ion bombardment 失效通过惰性离子轰击改善半导体激光器中的电流限制的方法
公开(公告)号：US4523961A
公开(公告)日：1985-06-18
申请号：US441365
申请日：1982-11-12
IPC分类号： H01L21/265 , H01L21/76 , H01S5/20 , H01L21/225 , H01S3/00 , H01S3/06
CPC分类号： H01L21/7605 , H01L21/2654 , H01S5/20 , H01S5/2059 , Y10S148/084
摘要： A method of producing patternable resistive regions in III-V compound semiconductor devices and a resulting device structure having improved current characteristics. III-V semiconductor substrates are irradiated with inert ions to produce a resistive region therein. At least one epitaxial layer is grown over the substrate while maintaining the resistive characteristics within the substrate. A second resistive region is then formed in at least the top epitaxial layer. This second resistive region is aligned with the first one in order to minimize current spread through the device.
摘要翻译： 一种在III-V族化合物半导体器件中产生可图案化电阻区域的方法，以及所得的器件结构具有改善的电流特性。 用惰性离子照射III-V半导体衬底，以在其中产生电阻区域。 在衬底上生长至少一个外延层，同时保持衬底内的电阻特性。 然后在至少顶部外延层中形成第二电阻区。 该第二电阻区域与第一电阻区域对准，以便最小化通过该器件的电流扩散。
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5.发明授权Production of semiconductor structures with buried resistive or conductive regions by controlled ion bombardment and heat treatment 失效通过控制离子轰击和热处理生产具有掩埋电阻或导电区域的半导体结构
公开(公告)号：US4539743A
公开(公告)日：1985-09-10
申请号：US555506
申请日：1983-11-28
IPC分类号： H01L21/265 , H01L21/266 , H01L21/324 , H01L21/74 , H01L21/76 , H01L21/8252 , H01L27/15 , H01L21/263 , H01L21/26
CPC分类号： H01L21/8252 , H01L21/2654 , H01L21/266 , H01L21/3245 , H01L21/743 , H01L21/7605
摘要： The property of Group III-V compound materials, whereby ion bombarded material becomes highly resistive but recovers its original low resistivity by annealing at a temperature which is dopant and material dependant, is utilized to fabricate integrated circuits which include buried semiconductor interconnections or bus bars between devices.
摘要翻译： III-V族化合物的性质，其中离子轰击材料变得高度电阻，但通过在掺杂剂和材料依赖的温度下进行退火来恢复其原始的低电阻率，用于制造集成电路，其包括掩埋半导体互连或母线之间的集成电路 设备。
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公开(公告)号：US4504952A
公开(公告)日：1985-03-12
申请号：US383778
申请日：1982-06-01
CPC分类号： H01S5/2203 , H01S5/24 , H01S5/2202 , H01S5/2237
摘要： A TJS light emitting diode (laser or LED) comprises an isotype double heterostructure (DH) and a V-groove which penetrates the intermediate layer of the DH. The groove is filled with a region of semiconductor material which enables carrier injection to occur from the region into the intermediate layer, or conversely, depending on the relative bandgaps of the layer and region. Real-refractive index guiding by the groove is described.
摘要翻译： TJS发光二极管（激光或LED）包括穿透DH的中间层的同型双异质结构（DH）和V形槽。 沟槽填充有半导体材料的区域，其使载流子注入从区域发生到中间层，或相反地取决于层和区域的相对带隙。 描述了由凹槽引导的实际折射率。
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公开(公告)号：US4313125A
公开(公告)日：1982-01-26
申请号：US50637
申请日：1979-06-21
CPC分类号： H01S5/20 , H01L33/0025 , H01S5/32 , H01S5/2004 , H01S5/305 , H01S5/32308
摘要： A double heterostructure light emitting semiconductor device is described wherein a narrow bandgap active region is sandwiched between two wider bandgap cladding layers, one of which contains a p-n homojunction. The purpose is to separate the p-n junction from the active region and, thus, to have the active region bounded by two isotype (p-p or n-n) heterojunctions. This configuration significantly reduces nonradiative interface recombination current which occurs principally at the anisotype (p-n) heterojunction in a standard double heterostructure.
摘要翻译： 描述了双异质结发光半导体器件，其中窄带隙有源区夹在两个较宽带隙包层之间，其中一个包含p-n同态结。 目的是将p-n结与活性区分离，从而使得由两个同种型（p-p或n-n）异质结界定的活性区。 该配置显着降低了主要在标准双异质结构中的异型（p-n）异质结中发生的非辐射界面复合电流。
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8.发明授权Selective plasma etching of dielectric masks in the presence of native oxides of group III-V compound semiconductors 失效在III-V族化合物半导体的天然氧化物存在下，对介质掩模进行选择性等离子体蚀刻
公开(公告)号：US4227975A
公开(公告)日：1980-10-14
申请号：US7422
申请日：1979-01-29
IPC分类号： H01L21/302 , H01L21/311 , H01L21/283 , H01L21/308 , H01L21/326
CPC分类号： H01L21/31138 , H01L21/31116
摘要： Plasma etching is described as a selective etch for dielectric masks such as SiO.sub.2, Si.sub.3 N.sub.4 and certain photoresists in the presence of native oxides of Group III-V compound semiconductors. This process can be used in the fabrication of mesa junction lasers and Burrus light emitting diodes.
摘要翻译： 等离子体蚀刻被描述为在III-V族化合物半导体的天然氧化物存在下的介电掩模如SiO 2，Si 3 N 4和某些光致抗蚀剂的选择性蚀刻。 该工艺可用于制造台面连接激光器和Burrus发光二极管。
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公开(公告)号：US06420252B1
公开(公告)日：2002-07-16
申请号：US09568065
申请日：2000-05-10
IPC分类号： H01L2144
CPC分类号： H01L21/76852 , H01L21/0272 , H01L21/31144 , H01L21/76841 , H01L21/76897
摘要： A method of forming a self-aligned contact on a semiconductor includes forming a layer of a dielectric material over a semiconductor, providing a photoresist layer over the dielectric layer and then exposing the photoresist layer with a desired pattern and developing an opening in the photoresist layer. The dielectric material exposed through the photoresist layer opening is then removed to form a contact opening extending through the dielectric material to the semiconductor. The photoresist layer is then eroded so as to enlarge the size of the opening in the photoresist layer, whereby the dielectric material adjacent the contact opening is exposed through the enlarged opening of the photoresist layer. A barrier metal is then deposited in the enlarged opening of the photoresist layer and in the contact opening of the dielectric material, whereby the barrier metal overlies the exposed portion of the dielectric material. A conductive metal is then deposited atop the barrier metal. The barrier metal isolates the contact metal from the semiconductor, thereby preventing interaction or intermixing of the contact metal and the semiconductor.
摘要翻译： 在半导体上形成自对准接触的方法包括在半导体上形成介电材料层，在介电层上提供光致抗蚀剂层，然后以期望的图案曝光光致抗蚀剂层，并在光刻胶层中显影出一个开口 。 然后去除通过光致抗蚀剂层开口暴露的电介质材料以形成延伸穿过介电材料到半导体的接触开口。 然后蚀刻光致抗蚀剂层以扩大光致抗蚀剂层中的开口的尺寸，由此邻近接触开口的电介质材料通过光致抗蚀剂层的扩大的开口暴露。 然后在光致抗蚀剂层的扩大开口中和介电材料的接触开口中沉积阻挡金属，由此阻挡金属覆盖在电介质材料的暴露部分上。 然后在阻挡金属顶上沉积导电金属。 阻挡金属将接触金属与半导体隔离，从而防止接触金属和半导体的相互作用或混合。
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10.发明授权Light-emitting diodes with loop and strip electrodes and with wide medial sections 有权具有环形和带状电极的发光二极管以及宽的中间部分公开(公告)号：US06642548B1
公开(公告)日：2003-11-04
申请号：US09692953
申请日：2000-10-20
IPC分类号： H01L3300
摘要： Light emitting diodes such as those formed from gallium nitride based semiconductors are provided with electrode and pad structures which facilitate current spreading. The LED may be formed as a die with a lower contact surface and a mesa projecting upwardly from the lower contact surface. An electrode on the lower contact surface may be in the form of a ring substantially encircling the mesa. In other arrangements, the pad and/or electrode on the lower contact surface is disposed in an indentation on one edge of the mesa whereas the pad on the top of the mesa is disposed adjacent the opposite edge of the mesa.
摘要翻译： 诸如由基于氮化镓的半导体形成的发光二极管设置有便于电流扩散的电极和焊盘结构。 LED可以形成为具有下接触表面的模具和从下接触表面向上突出的台面。 下接触表面上的电极可以是基本上环绕台面的环的形式。 在其他布置中，下接触表面上的焊盘和/或电极设置在台面的一个边缘上的凹陷中，而台面的顶部上的焊盘邻近台面的相对边缘设置。
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