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1.发明授权公开(公告)号：US07144849B2
公开(公告)日：2006-12-05
申请号：US11181747
申请日：2005-07-15
CPC分类号： G03F7/425 , C11D7/261 , C11D7/3218 , C11D7/3227 , C11D7/3245 , C11D7/3263 , C11D7/34 , C11D7/5009 , C11D7/5013 , C11D7/5022 , C11D11/0047 , C23G1/18
摘要： A composition for removing resists and etching residue from substrates containing at least one nucleophilic amine compound having oxidation and reduction potentials, at least one organic solvent, water and, optionally, a chelating agent is described. The chelating agent is preferred to be included since it provides added stability and activity to the cleaning composition so that the composition has long term effectiveness. If a chelating agent is not present, the composition, while providing for adequate stripping and cleaning upon initial use of the composition following mixing, has only short term stability. In this latter instance, the nucleophilic amine compound and organic solvent components of the composition preferably are maintained separate from each other until it is desired to use the composition. Thereafter, the components are combined. Following use of the composition, the non-used portion of the composition can be disposed of or be reactivated by the addition of a chelating agent.
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2.发明申请公开(公告)号：US20090011967A1
公开(公告)日：2009-01-08
申请号：US12213300
申请日：2008-06-17
IPC分类号： C11D7/32
CPC分类号： G03F7/425 , C11D7/261 , C11D7/3218 , C11D7/3227 , C11D7/3245 , C11D7/3263 , C11D7/34 , C11D7/5009 , C11D7/5013 , C11D7/5022 , C11D11/0047 , C23G1/18
摘要： A composition for removing resists and etching residue from substrates containing at least one nucleophilic amine compound having oxidation and reduction potentials, at least one organic solvent, water and, optionally, a chelating agent is described. The chelating agent is preferred to be included since it provides added stability and activity to the cleaning composition so that the composition has long term effectiveness. If a chelating agent is not present, the composition, while providing for adequate stripping and cleaning upon initial use of the composition following mixing, has only short term stability. In this latter instance, the nucleophilic amine compound and organic solvent components of the composition preferably are maintained separate from each other until it is desired to use the composition. Thereafter, the components are combined. Following use of the composition, the non-used portion of the composition can be disposed of or be reactivated by the addition of a chelating agent.
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3.发明授权Cleaning solutions including nucleophilic amine compound having reduction and oxidation potentials 失效包括具有还原和氧化电位的亲核胺化合物的清洁溶液公开(公告)号：US07387130B2
公开(公告)日：2008-06-17
申请号：US11633459
申请日：2006-12-05
CPC分类号： G03F7/425 , C11D7/261 , C11D7/3218 , C11D7/3227 , C11D7/3245 , C11D7/3263 , C11D7/34 , C11D7/5009 , C11D7/5013 , C11D7/5022 , C11D11/0047 , C23G1/18
摘要： A composition for removing resists and etching residue from substrates containing at least one nucleophilic amine compound having oxidation and reduction potentials, at least one organic solvent, water and, optionally, a chelating agent is described. The chelating agent is preferred to be included since it provides added stability and activity to the cleaning composition so that the composition has long term effectiveness. If a chelating agent is not present, the composition, while providing for adequate stripping and cleaning upon initial use of the composition following mixing, has only short term stability. In this latter instance, the nucleophilic amine compound and organic solvent components of the composition preferably are maintained separate from each other until it is desired to use the composition. Thereafter, the components are combined.
摘要翻译： 描述了用于去除抗蚀剂并从含有至少一种具有氧化和还原电位的亲核胺化合物的底物蚀刻残余物的组合物，至少一种有机溶剂，水和任选的螯合剂。 优选包含螯合剂，因为它为清洁组合物提供了增加的稳定性和活性，使得组合物具有长期有效性。 如果不存在螯合剂，组合物在混合后初始使用组合物时提供足够的剥离和清洁，仅具有短期的稳定性。 在后一种情况下，组合物的亲核胺化合物和有机溶剂组分优选彼此保持分开，直到期望使用该组合物。 此后，组合组件。
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4.发明授权公开(公告)号：US07051742B2
公开(公告)日：2006-05-30
申请号：US10826286
申请日：2004-04-19
CPC分类号： H01L21/02071 , B24B37/042 , C09D9/00 , C11D3/2058 , C11D3/2065 , C11D3/2086 , C11D3/30 , C11D3/3427 , C11D3/3472 , C11D3/43 , C11D7/261 , C11D7/262 , C11D7/263 , C11D7/265 , C11D7/267 , C11D7/32 , C11D7/3209 , C11D7/3218 , C11D7/3227 , C11D7/3245 , C11D7/3254 , C11D7/3263 , C11D7/3272 , C11D7/3281 , C11D7/34 , C11D7/5013 , C11D11/0047 , C11D11/0052 , C23G1/103 , C23G1/205 , G03F7/42 , G03F7/423 , G03F7/425 , H01L21/02052 , H01L21/02063 , H01L21/31133 , H01L21/76802 , H01L21/76885
摘要： A composition for removing resists and etching residue from substrates containing at least one nucleophilic amine compound having oxidation and reduction potentials, at least one organic solvent, water and, optionally, a chelating agent is described. The chelating agent is preferred to be included since it provides added stability and activity to the cleaning composition so that the composition has long term effectiveness. If a chelating agent is not present, the composition, while providing for adequate stripping and cleaning upon initial use of the composition following mixing, has only short term stability. In this latter instance, the nucleophilic amine compound and organic solvent components of the composition preferably are maintained separate from each other until it is desired to use the composition. Thereafter, the components are combined. Following use of the composition, the non-used portion of the composition can be disposed of or be reactivated by the addition of a chelating agent.
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5.发明授权
公开(公告)号：US6110881A
公开(公告)日：2000-08-29
申请号：US654007
申请日：1996-05-28
IPC分类号： B24B37/04 , C09D9/00 , C11D3/20 , C11D3/30 , C11D3/34 , C11D3/43 , C11D7/26 , C11D7/32 , C11D7/34 , C11D7/50 , C11D11/00 , C23G1/10 , C23G1/20 , G03F7/42 , H01L21/02 , H01L21/306 , H01L21/311 , H01L21/321 , H01L21/3213 , H01L21/768
CPC分类号： H01L21/02071 , B24B37/042 , C09D9/00 , C11D11/0047 , C11D11/0052 , C11D7/261 , C11D7/262 , C11D7/263 , C11D7/265 , C11D7/267 , C11D7/32 , C11D7/3209 , C11D7/3218 , C11D7/3227 , C11D7/3245 , C11D7/3254 , C11D7/3263 , C11D7/3272 , C11D7/3281 , C11D7/34 , C11D7/5013 , C23G1/103 , C23G1/205 , G03F7/42 , G03F7/425 , H01L21/02063 , H01L21/31133 , H01L21/76814 , H01L21/76885
摘要： A composition for removing resists and etching residue from substrates containing at least one nucleophilic amine compound having oxidation and reduction potentials, at least one organic solvent, water and, optionally, a chelating agent is described. The chelating agent is preferred to be included since it provides added stability and activity to the cleaning composition so that the composition has long term effectiveness. If a chelating agent is not present, the composition, while providing for adequate stripping and cleaning upon initial use of the composition following mixing, has only short term stability. In this latter instance, the nucleophilic amine compound and organic solvent components of the composition preferably are maintained separate from each other until it is desired to use the composition. Thereafter, the components are combined. Following use of the composition, the non-used portion of the composition can be disposed of or be reactivated by the addition of a chelating agent.
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公开(公告)号：US5911835A
公开(公告)日：1999-06-15
申请号：US826257
申请日：1997-03-27
IPC分类号： B24B37/04 , C09D9/00 , C11D3/20 , C11D3/30 , C11D3/34 , C11D3/43 , C11D7/26 , C11D7/32 , C11D7/34 , C11D7/50 , C11D11/00 , C23G1/10 , C23G1/20 , G03F7/42 , H01L21/02 , H01L21/306 , H01L21/311 , H01L21/321 , H01L21/3213 , H01L21/768 , B08B3/08
CPC分类号： H01L21/02071 , B24B37/042 , C09D9/00 , C11D11/0047 , C11D11/0052 , C11D7/261 , C11D7/262 , C11D7/263 , C11D7/265 , C11D7/267 , C11D7/32 , C11D7/3209 , C11D7/3218 , C11D7/3227 , C11D7/3245 , C11D7/3254 , C11D7/3263 , C11D7/3272 , C11D7/3281 , C11D7/34 , C11D7/5013 , C23G1/103 , C23G1/205 , G03F7/42 , G03F7/425 , H01L21/02063 , H01L21/31133 , H01L21/76814 , H01L21/76885
摘要： A (method using a composition) for removing resists and etching residue from substrates containing at least one nucleophilic amine compound having oxidation and reduction potentials, at least one organic solvent, water and, optionally, a chelating agent. The chelating agent is preferred to be included since it provides added stability and activity to the cleaning composition so that the composition has long term effectiveness. If a chelating agent is not present, the composition, while providing for adequate stripping and cleaning upon initial use of the composition following mixing, has only short term stability. In this latter instance, the nucleophilic amine compound and organic solvent components of the composition preferably are maintained separate from each other until it is desired to use the composition. Thereafter, the components are combined. Following use of the composition, the non-used portion of the composition can be disposed of or be reactivated by the addition of a chelating agent.
摘要翻译： A（使用组合物的方法）用于除去抗蚀剂并从含有至少一种具有氧化和还原电位的亲核胺化合物的基材上蚀刻残留物，至少一种有机溶剂，水和任选的螯合剂。 优选包含螯合剂，因为它为清洁组合物提供了增加的稳定性和活性，使得组合物具有长期有效性。 如果不存在螯合剂，组合物在混合后初始使用组合物时提供足够的剥离和清洁，仅具有短期的稳定性。 在后一种情况下，组合物的亲核胺化合物和有机溶剂组分优选彼此保持分开，直到期望使用该组合物。 此后，组合组件。 使用组合物后，组合物的未使用部分可以通过加入螯合剂来处理或再活化。
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7.发明授权Cleaning solutions including nucleophilic amine compound having reduction and oxidation potentials 失效包括具有还原和氧化电位的亲核胺化合物的清洁溶液公开(公告)号：US06319885B1
公开(公告)日：2001-11-20
申请号：US09603693
申请日：2000-06-26
IPC分类号： C11D162
CPC分类号： H01L21/02071 , B24B37/042 , C09D9/00 , C11D3/2058 , C11D3/2065 , C11D3/2086 , C11D3/30 , C11D3/3427 , C11D3/3472 , C11D3/43 , C11D7/261 , C11D7/262 , C11D7/263 , C11D7/265 , C11D7/267 , C11D7/32 , C11D7/3209 , C11D7/3218 , C11D7/3227 , C11D7/3245 , C11D7/3254 , C11D7/3263 , C11D7/3272 , C11D7/3281 , C11D7/34 , C11D7/5013 , C11D11/0047 , C11D11/0052 , C23G1/103 , C23G1/205 , G03F7/42 , G03F7/423 , G03F7/425 , H01L21/02052 , H01L21/02063 , H01L21/31133 , H01L21/76802 , H01L21/76885
摘要： A composition for removing resists and etching residue from substrates containing at least one nucleophilic amine compound having oxidation and reduction potentials, at least one organic solvent, water and, optionally, a chelating agent is described. The chelating agent is preferred to be included since it provides added stability and activity to the cleaning composition so that the composition has long term effectiveness. If a chelating agent is not present, the composition, while providing for adequate stripping and cleaning upon initial use of the composition following mixing, has only short term stability. In this latter instance, the nucleophilic amine compound and organic solvent components of the composition preferably are maintained separate from each other until it is desired to use the composition. Thereafter, the components are combined. Following use of the composition, the non-used portion of the composition can be disposed of or be reactivated by the addition of a chelating agent.
摘要翻译： 描述了用于去除抗蚀剂并从含有至少一种具有氧化和还原电位的亲核胺化合物的底物蚀刻残余物的组合物，至少一种有机溶剂，水和任选的螯合剂。 优选包含螯合剂，因为它为清洁组合物提供了增加的稳定性和活性，使得组合物具有长期有效性。 如果不存在螯合剂，组合物在混合后初始使用组合物时提供足够的剥离和清洁，仅具有短期的稳定性。 在后一种情况下，组合物的亲核胺化合物和有机溶剂组分优选彼此保持分开，直到期望使用该组合物。 此后，组合组件。 使用组合物后，组合物的未使用部分可以通过加入螯合剂来处理或再活化。
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8.发明授权Compositions for cleaning organic and plasma etched residues for semiconductor devices 失效用于清洁半导体器件的有机和等离子体蚀刻残留物的组合物公开(公告)号：US07456140B2
公开(公告)日：2008-11-25
申请号：US10920494
申请日：2004-08-17
申请人： Robert J. Small , Bakul P. Patel , Wai Mun Lee , Douglas Holmes , Jerome Daviot , Chris Reid
发明人： Robert J. Small , Bakul P. Patel , Wai Mun Lee , Douglas Holmes , Jerome Daviot , Chris Reid
IPC分类号： C11D7/50
CPC分类号： H01L21/02071 , C09K13/08 , G03F7/423 , G03F7/425 , G03F7/426 , H01L21/02063 , H01L21/31133
摘要： A composition for the stripping of photoresist and the cleaning of residues from substrates, and for silicon oxide etch, comprising from about 0.01 percent by weight to about 10 percent by weight of one or more fluoride compounds, from about 10 percent by weight to about 95% by weight of a sulfoxide or sulfone solvent, and from about 20 percent by weight to about 50 percent by weight water. The composition may contain corrosion inhibitors, chelating agents, co-solvents, basic amine compounds, surfactants, acids and bases.
摘要翻译： 一种用于剥离光致抗蚀剂的组合物，以及用于清洁底物的残留物和用于氧化硅蚀刻的组合物，其包含约0.01重量％至约10重量％的一种或多种氟化物，约10重量％至约95重量％ 重量百分比的亚砜或砜溶剂，和约20％至约50％重量的水。 组合物可以含有腐蚀抑制剂，螯合剂，助溶剂，碱性胺化合物，表面活性剂，酸和碱。
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9.发明授权Compositions for cleaning organic and plasma etched residues for semiconductor devices 有权用于清洁半导体器件的有机和等离子体蚀刻残留物的组合物公开(公告)号：US06777380B2
公开(公告)日：2004-08-17
申请号：US09903064
申请日：2001-07-10
申请人： Robert J. Small , Bakul P. Patel , Wai Mun Lee , Douglas Holmes , Jerome Daviot , Chris Reid
发明人： Robert J. Small , Bakul P. Patel , Wai Mun Lee , Douglas Holmes , Jerome Daviot , Chris Reid
IPC分类号： G03C500
CPC分类号： G03F7/423 , C09K13/08 , G03F7/425 , G03F7/426 , H01L21/02052 , H01L21/02063 , H01L21/02071 , H01L21/31111 , H01L21/31133
摘要： A composition for the stripping of photoresist and the cleaning of residues from substrates, and for silicon oxide etch, comprising from about 0.01 percent by weight to about 10 percent by weight of one or more fluoride compounds, from about 10 percent by weight to about 95% by weight of a sulfoxide or sulfone solvent, and from about 20 percent by weight to about 50 percent by weight water. The composition may contain corrosion inhibitors, chelating agents, co-solvents, basic amine compounds, surfactants, acids and bases.
摘要翻译： 一种用于剥离光致抗蚀剂的组合物，以及用于清洁底物的残留物和用于氧化硅蚀刻的组合物，其包含约0.01重量％至约10重量％的一种或多种氟化物，约10重量％至约95重量％ 重量百分比的亚砜或砜溶剂，和约20％至约50％重量的水。 组合物可以含有腐蚀抑制剂，螯合剂，助溶剂，碱性胺化合物，表面活性剂，酸和碱。
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10.发明授权公开(公告)号：US08802609B2
公开(公告)日：2014-08-12
申请号：US13354145
申请日：2012-01-19
申请人： Wai Mun Lee , Hua Cui , Mark A. Scialdone , Albert G. Anderson
发明人： Wai Mun Lee , Hua Cui , Mark A. Scialdone , Albert G. Anderson
CPC分类号： C11D11/0047 , C11D3/43 , C11D7/3209 , G03F7/422 , G03F7/425 , H01L21/02057 , H01L21/02063 , H01L21/02074
摘要： Semiconductor processing compositions comprising amidoxime compounds having two or more amidoxime functional groups and their use in semiconductor processing to remove photoresist, polymeric materials, etching residues and copper oxides from semiconductor substrates, particularly substrates comprising copper, low-k dielectric material, titanium nitride, and/or titanium oxynitride.
摘要翻译： 包含具有两个或更多个偕胺肟官能团的偕胺肟化合物的半导体处理组合物及其在半导体处理中用于从半导体衬底，特别是包含铜，低k电介质材料，氮化钛和/或氧化物的衬底去除光致抗蚀剂，聚合物材料，蚀刻残余物和铜氧化物的用途 /或氮氧化钛。
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