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10 条记录 (耗时 0.036 秒)

    Method of cleansing vias in semiconductor wafer having metal conductive layer
    2.
    发明授权
    Method of cleansing vias in semiconductor wafer having metal conductive layer 有权
    在具有金属导电层的半导体晶片中清洁通孔的方法

    公开(公告)号：US06319842B1

    公开(公告)日：2001-11-20

    申请号：US09753432

    申请日：2001-01-02

    申请人： Mukul Khosla ,  Lap Tam ,  Ronald A. Powell ,  Ronald D. Allen ,  Robert T. Rozbicki ,  Erich Klawuhn ,  E. Derryck Settles

    发明人： Mukul Khosla ,  Lap Tam ,  Ronald A. Powell ,  Ronald D. Allen ,  Robert T. Rozbicki ,  Erich Klawuhn ,  E. Derryck Settles

    IPC分类号： H01L21302

    CPC分类号： H01L21/02063 ,  H01L21/31116 ,  H01L21/76814 ,  Y10S438/906

    摘要： Non-volatile and oxide residues that form during semiconductor processing are removed from the semiconductor structure in a two-stage process. An inert gas and a reducing gas are introduced to the reactor. In the first stage, the non-volatile contaminants are sputtered from the semiconductor structure by creating a plasma to ionize the inert gas. The power applied to the plasma is preferably high enough to give the ions of the inert gas a high degree of directionality as they approach the structure. The first stage is continued until the non-volatile contaminants have been sufficiently removed from the structure. In the second stage, the power is reduced and the reducing gas (e.g., hydrogen) reacts with the oxides (e.g., copper oxide) to form elemental metal and water vapor. During the second stage there is no appreciable sputtering, and therefore the damage to the structure is limited as compared with processes that use sputtering and reduction simultaneously.

    摘要翻译： 在半导体处理中形成的非挥发性和氧化物残余物在两阶段工艺中从半导体结构中去除。 将惰性气体和还原气体引入反应器。 在第一阶段，通过产生等离子体以使惰性气体离子化，从半导体结构溅射非挥发性污染物。 施加到等离子体的功率优选地足够高以使惰性气体的离子在接近结构时具有高度的方向性。 第一阶段继续进行，直至非挥发性污染物从结构中充分除去。 在第二阶段中，功率降低，并且还原气体（例如氢气）与氧化物（例如氧化铜）反应以形成元素金属和水蒸气。 在第二阶段期间，没有明显的溅射，因此与使用溅射和还原的方法相比，对结构的损害是有限的。

    Apparatus and method for enhanced degassing of semiconductor wafers for increased throughput
    3.
    发明授权
    Apparatus and method for enhanced degassing of semiconductor wafers for increased throughput 有权
    用于增强半导体晶片脱气的装置和方法，以增加生产量

    公开(公告)号：US06497734B1

    公开(公告)日：2002-12-24

    申请号：US10037026

    申请日：2002-01-02

    申请人： Kenneth K. Barber ,  Mark Fissel ,  Soo Yun Joh ,  Mukul Khosla ,  Karl B. Levy ,  Robert Martinson ,  Michael Meyers ,  Dhairya Shrivastava

    发明人： Kenneth K. Barber ,  Mark Fissel ,  Soo Yun Joh ,  Mukul Khosla ,  Karl B. Levy ,  Robert Martinson ,  Michael Meyers ,  Dhairya Shrivastava

    IPC分类号： H01L21324

    CPC分类号： H01L21/67757 ,  H01L21/67017 ,  Y10S438/908 ,  Y10S438/909 ,  Y10T29/41

    摘要： A multi-level shelf degas station relying on at least two heaters integrated within wafer holding shelves or slots, where the semiconductor wafers do not have direct contact with the heater shelves. The heaters provide conduction heating. In order to degas a wafer, the heater and wafer holder assembly is positioned in a sequential manner through each wafer slot to the next available slot. If a degassed wafer exists in the slot, a transfer chamber arm removes it. A loader arm then places a wafer in the available, empty slot and the stage is moved upwards to receive the wafer from the loader arm. The transfer chamber arm removes an individual wafer from the heater and wafer holder assembly allowing the removed wafer to be individually processed while the other wafers remain in the heater and wafer holder assembly. In some instances, a loader arm may also remove wafers. The remaining wafers in the heater and wafer holder assembly are subjected to further degas treatment while the wafer(s) removed by the transfer chamber arm are exposed to other process steps. Air-cooling chambers are employed to facilitate cooling the wafer slots for ease of removal and maintenance.

    摘要翻译： 依赖于集成在晶片保持架或狭槽内的至少两个加热器的多级货架脱气站，其中半导体晶片不与加热器搁架直接接触。 加热器提供传导加热。 为了使晶片脱气，加热器和晶片保持器组件以顺序的方式定位成通过每个晶片槽到下一个可用的槽。 如果在槽中存在脱气的晶片，则传送室臂将其移除。 然后，装载臂将晶片放置在可用的空槽中，并且台架向上移动以从装载臂接收晶片。 传送室臂从加热器和晶片保持器组件移除单个晶片，允许将移除的晶片单独处理，而其它晶片保留在加热器和晶片保持器组件中。 在一些情况下，装载臂也可以移除晶片。 在加热器和晶片保持器组件中的剩余晶片经受进一步的脱气处理，同时通过转移室臂移除的晶片暴露于其它工艺步骤。 采用空气冷却室以便于冷却晶片槽以便于去除和维护。

    Vapor Delivery Apparatus
    6.
    发明申请
    Vapor Delivery Apparatus 审中-公开
    蒸气输送装置

    公开(公告)号：US20130312663A1

    公开(公告)日：2013-11-28

    申请号：US13477928

    申请日：2012-05-22

    申请人： Mukul Khosla ,  Mike Grimes ,  Peter Krotov ,  Genny Epshteyn

    发明人： Mukul Khosla ,  Mike Grimes ,  Peter Krotov ,  Genny Epshteyn

    IPC分类号： F17D3/00 ,  C23C16/52

    CPC分类号： C23C16/52 ,  C23C16/4485 ,  C23C16/45561 ,  Y10T137/0379 ,  Y10T137/6416

    摘要： A vapor delivery apparatus for providing a precursor vapor for a vapor deposition process includes a precursor container for holding a liquid or solid precursor. A first temperature control assembly maintains the precursor container at a first temperature to generate a vapor precursor from the liquid or solid precursor. An isolation valve is coupled to the precursor container, and a specific quantity of the vapor precursor is accumulated in an expansion volume. A fill valve, which is coupled to each of the isolation valve and the expansion volume, controls the flow of the vapor precursor from the precursor container into the expansion volume. A second temperature control assembly maintains the isolation valve at a second temperature greater than the first temperature.

    摘要翻译： 用于提供用于气相沉积工艺的前体蒸气的蒸气输送装置包括用于保持液体或固体前体的前体容器。 第一温度控制组件将前体容器保持在第一温度以从液体或固体前体产生蒸气前体。 隔离阀联接到前体容器，并且特定量的蒸气前体在膨胀体积中积聚。 连接到每个隔离阀和膨胀体积的填充阀控制蒸气前体从前体容器进入膨胀体积的流动。 第二温度控制组件将隔离阀保持在大于第一温度的第二温度。

    Closed loop monitoring of electroplating bath constituents using mass spectrometry
    8.
    发明授权
    Closed loop monitoring of electroplating bath constituents using mass spectrometry 有权
    使用质谱法对电镀浴组分进行闭环监测

    公开(公告)号：US06726824B1

    公开(公告)日：2004-04-27

    申请号：US09833385

    申请日：2001-04-11

    申请人： Mukul Khosla

    发明人： Mukul Khosla

    IPC分类号： C25D2112

    CPC分类号： C25D21/12

    摘要： The present invention provides methods and apparatus for analysis and monitoring of electrolyte bath composition. Based on the results of the analysis, the invention controls electrolyte bath composition and plating hardware. Thus, the invention provides control of electroplating processes based on plating bath composition data. The invention accomplishes this by incorporating mass spectral analysis into a feedback control mechanism for electroplating. Mass spectrometry is used to identify plating bath conditions and based on the results, the plating bath formulation and plating process are controlled.

    摘要翻译： 本发明提供了用于分析和监测电解液浴组合物的方法和装置。 根据分析结果，本发明控制电解液组成和电镀硬件。 因此，本发明提供了基于电镀浴组成数据的电镀工艺的控制。 本发明通过将质谱分析结合到用于电镀的反馈控制机构中来实现。 使用质谱法来鉴定电镀浴条件，并根据结果，控制电镀浴配方和电镀工艺。

    Linear multipole rod assembly for mass spectrometers
    9.
    发明授权
    Linear multipole rod assembly for mass spectrometers 有权
    用于质谱仪的线性多极杆组件

    公开(公告)号：US06441370B1

    公开(公告)日：2002-08-27

    申请号：US09546748

    申请日：2000-04-11

    申请人： Mukul Khosla ,  Berg Tehlirian

    发明人： Mukul Khosla ,  Berg Tehlirian

    IPC分类号： H01J4942

    CPC分类号： H01J49/063 ,  H01J49/068 ,  H01J49/4215 ,  H01J49/4225 ,  H01J49/4255

    摘要： A multiple-pole electrode assembly is disclosed for use in mass spectrometers or other applications such as ion traps or ion guides. The disclosed apparatus provides a rod mounting and connection assembly in which equally spaced rectangular rods are embedded in spaced, dimensionally stable insulating materials. This structure is more conveniently and inexpensively manufactured than previously available multiple pole electrode assemblies.

    摘要翻译： 公开了用于质谱仪或其它应用如离子阱或离子导向器的多极电极组件。 所公开的装置提供了杆安装和连接组件，其中等间隔的矩形杆被嵌入间隔开的尺寸稳定的绝缘材料中。 该结构比先前可用的多极电极组件更方便和廉价地制造。