公开(公告)号：US20100104953A1

公开(公告)日：2010-04-29

申请号：US12258271

申请日：2008-10-24

申请人： James S. Papanu ,  Roman Gouk ,  Han-Wen Chen ,  Phillip Peters

发明人： James S. Papanu ,  Roman Gouk ,  Han-Wen Chen ,  Phillip Peters

IPC分类号： G03F1/00

CPC分类号： G03F7/168 ,  G03F1/82 ,  G03F7/427

摘要： A H2O vapor based dry plasma process for pre-treating and strip-cleaning a reticle, a three layer gas distribution plate (GDP) assembly to control the heat load to the reticle during the plasma process, and a modified hole pattern for the GDP that further enhances stripping of resist from the edges of the reticle are disclosed.

摘要翻译： 基于H 2 O蒸汽的干法等离子体处理，用于预处理和剥离掩模版，三层气体分配板（GDP）组件，用于控制等离子体工艺期间对掩模版的热负荷，以及改进的孔模式用于GDP， 公开了进一步增强抗蚀剂从掩模版的边缘的剥离。

公开(公告)号：US20080078424A1

公开(公告)日：2008-04-03

申请号：US11536292

申请日：2006-09-28

申请人： Roman Gouk ,  Phillip Peters ,  Han-Wen Chen ,  James S. Papanu

发明人： Roman Gouk ,  Phillip Peters ,  Han-Wen Chen ,  James S. Papanu

IPC分类号： B08B3/00

CPC分类号： H01L21/67028 ,  G03F7/423 ,  H01L21/67051 ,  H01L21/67057 ,  H01L21/6708

摘要： Embodiments of methods for decreasing the process time for photoresist stripping from photomasks are herein disclosed. In some embodiments, a stripping solution and a cleaning solution are consecutively applied in an alternating manner to a photomask to remove photoresist from the mask. The stripping solution and the cleaning solution can each be applied between 6 and 12 times. The stripping solution and the cleaning solution can be applied in a predetermined time interval from about 30 seconds to about 120 seconds and from about 8 seconds to about 30 seconds, respectively. The process can include a finishing process which can include a final cleaning operation, a rinsing operation and a drying operation.

摘要翻译： 本文公开了用于降低光致抗蚀剂从光掩模剥离的处理时间的方法的实施方案。 在一些实施方案中，剥离溶液和清洁溶液以交替方式连续施加到光掩模以从掩模中除去光致抗蚀剂。 剥离溶液和清洗溶液各自可以施加6-12次。 剥离溶液和清洁溶液可以分别以约30秒至约120秒和约8秒至约30秒的预定时间间隔施加。 该方法可以包括可以包括最终清洁操作，漂洗操作和干燥操作的精加工过程。

公开(公告)号：US07718009B2

公开(公告)日：2010-05-18

申请号：US10931093

申请日：2004-08-30

申请人： Steven Verhaverbeke ,  Jianshe Tang ,  Roman Gouk ,  Brian J. Brown ,  Han-Wen Chen ,  Ching-Hwa Weng ,  James S. Papanu ,  Dennis Yost

发明人： Steven Verhaverbeke ,  Jianshe Tang ,  Roman Gouk ,  Brian J. Brown ,  Han-Wen Chen ,  Ching-Hwa Weng ,  James S. Papanu ,  Dennis Yost

IPC分类号： C23G1/02

CPC分类号： H01L21/02074 ,  B08B3/08 ,  B08B3/12 ,  C11D7/08 ,  C11D11/0047 ,  C11D11/007 ,  H01L21/02063 ,  H01L21/02071 ,  H01L21/0209 ,  H01L21/67051 ,  H01L21/76808 ,  H01L21/76814

摘要： Cleaning solutions and cleaning methods targeted to particular substrates and structures in semiconductor fabrication are described. A method of cleaning fragile structures having a dimension less than 0.15 um with a cleaning solution formed of a solvent having a surface tension less than water while applying acoustic energy to the substrate on which the structures are formed is described. Also, a method of cleaning copper with several different cleaning solutions, and in particular an aqueous sulfuric acid and HF cleaning solution, is described. Also, methods of cleaning both sides of a substrate at the same time with different cleaning solutions applied to the top and the bottom are described.

摘要翻译： 描述了针对半导体制造中的特定衬底和结构的清洁溶液和清洁方法。 描述了一种使用表面张力小于水的溶剂形成的清洁溶液清洁尺寸小于0.15μm的脆弱结构的方法，同时向其上形成结构的基底施加声能。 此外，还描述了用几种不同的清洁溶液，特别是硫酸水溶液和HF清洗溶液清洗铜的方法。 此外，还描述了使用不同的清洁溶液同时清洁基板的两侧的方法，所述清洗溶液应用于顶部和底部。

公开(公告)号：US20070068558A1

公开(公告)日：2007-03-29

申请号：US11514663

申请日：2006-09-01

申请人： James Papanu ,  Roman Gouk ,  Han-Wen Chen ,  Phillip Peters

发明人： James Papanu ,  Roman Gouk ,  Han-Wen Chen ,  Phillip Peters

IPC分类号： G03F1/00 ,  B08B3/00

CPC分类号： G03F1/82 ,  H01L21/67051

摘要： An integrated substrate cleaning processes capable of removing residues and particulates from the surface of a photomask is described. In one embodiment, an ozonated de-ionized water treatment is the first wet cleaning operation. In an embodiment of the present invention, the substrate cleaning process includes a wet cleaning operation employing an ammonium hydroxide-based chemical cleaning solution diluted with hydrogenated de-ionized water. In another embodiment of the present invention, the substrate cleaning process uses a plasma treatment prior to the first wet cleaning operation.

摘要翻译： 描述了能够从光掩模的表面去除残留物和微粒的集成基板清洗方法。 在一个实施方案中，臭氧化去离子水处理是第一次湿式清洗操作。 在本发明的一个实施例中，基板清洗工艺包括使用氢化去离子水稀释的基于氢氧化铵的化学清洗溶液的湿式清洗操作。 在本发明的另一个实施方案中，基材清洗工艺在第一次湿式清洗操作之前使用等离子体处理。

公开(公告)号：US08318589B2

公开(公告)日：2012-11-27

申请号：US12748780

申请日：2010-03-29

申请人： Valery V. Komin ,  Hien-Minh Huu Le ,  David Tanner ,  James S. Papanu ,  Philip A. Greene ,  Suresh M. Shrauti ,  Roman Gouk ,  Steven Verhaverbeke

发明人： Valery V. Komin ,  Hien-Minh Huu Le ,  David Tanner ,  James S. Papanu ,  Philip A. Greene ,  Suresh M. Shrauti ,  Roman Gouk ,  Steven Verhaverbeke

IPC分类号： H01L21/20

CPC分类号： C23C14/086 ,  C23C14/5806 ,  C23C14/5873 ,  H01L31/022466 ,  H01L31/0236 ,  H01L31/02366 ,  H01L31/03682 ,  H01L31/03685 ,  H01L31/03762 ,  H01L31/03921 ,  H01L31/056 ,  H01L31/075 ,  H01L31/077 ,  H01L31/1864 ,  H01L31/1884 ,  Y02E10/52 ,  Y02E10/545 ,  Y02E10/546 ,  Y02E10/548 ,  Y02P70/521

摘要： Embodiments disclosed herein generally relate to a process of depositing a transparent conductive oxide layer over a substrate. The transparent oxide layer is sometimes deposited onto a substrate for later use in a solar cell device. The transparent conductive oxide layer may be deposited by a “cold” sputtering process. In other words, during the sputtering process, a plasma is ignited in the processing chamber which naturally heats the substrate. No additional heat is provided to the substrate during deposition such as from the susceptor. After the transparent conductive oxide layer is deposited, the substrate may be annealed and etched, in either order, to texture the transparent conductive oxide layer. In order to tailor the shape of the texturing, different wet etch chemistries may be utilized. The different etch chemistries may be used to shape the surface of the transparent conductive oxide and the etch rate.

摘要翻译： 本文公开的实施例通常涉及在衬底上沉积透明导电氧化物层的工艺。 透明氧化物层有时沉积在衬底上，以供以后用于太阳能电池器件中。 可以通过冷溅射工艺沉积透明导电氧化物层。 换句话说，在溅射过程中，在处理室中点燃等离子体，其自然地加热基板。 在诸如从感受器的沉积期间不会向衬底提供额外的热量。 在沉积透明导电氧化物层之后，可以以任何顺序对衬底进行退火和蚀刻，以对透明导电氧化物层进行纹理化。 为了调整纹理的形状，可以使用不同的湿蚀刻化学物质。 可以使用不同的蚀刻化学物质来形成透明导电氧化物的表面和蚀刻速率。

公开(公告)号：US20100311204A1

公开(公告)日：2010-12-09

申请号：US12748790

申请日：2010-03-29

申请人： VALERY V. KOMIN ,  Hien-Minh Huu Le ,  David Tanner ,  James S. Papanu ,  Philip A. Greene ,  Suresh M. Shrauti ,  Roman Gouk ,  Steven Verhaverbeke

发明人： VALERY V. KOMIN ,  Hien-Minh Huu Le ,  David Tanner ,  James S. Papanu ,  Philip A. Greene ,  Suresh M. Shrauti ,  Roman Gouk ,  Steven Verhaverbeke

IPC分类号： H01L31/18 ,  H01L21/283

CPC分类号： C23C14/086 ,  C23C14/541 ,  C23C14/56 ,  C23C14/5846 ,  H01L31/022466 ,  H01L31/022483 ,  H01L31/02366 ,  H01L31/03921 ,  H01L31/056 ,  H01L31/075 ,  H01L31/1884 ,  Y02E10/52 ,  Y02E10/548

摘要： Embodiments disclosed herein generally relate to a process of depositing a transparent conductive oxide layer over a substrate. The transparent oxide layer is sometimes deposited onto a substrate for later use in a solar cell device. The transparent conductive oxide layer may be deposited by a “cold” sputtering process. In other words, during the sputtering process, a plasma is ignited in the processing chamber which naturally heats the substrate. No additional heat is provided to the substrate during deposition such as from the susceptor. After the transparent conductive oxide layer is deposited, the substrate may be annealed and etched, in either order, to texture the transparent conductive oxide layer. In order to tailor the shape of the texturing, different wet etch chemistries may be utilized. The different etch chemistries may be used to shape the surface of the transparent conductive oxide and the etch rate.

摘要翻译： 本文公开的实施例通常涉及在衬底上沉积透明导电氧化物层的工艺。 透明氧化物层有时沉积在衬底上，以供以后用于太阳能电池器件中。 可以通过“冷”溅射工艺沉积透明导电氧化物层。 换句话说，在溅射过程中，在处理室中点燃等离子体，其自然地加热基板。 在诸如从感受器的沉积期间不会向衬底提供额外的热量。 在沉积透明导电氧化物层之后，可以以任何顺序对衬底进行退火和蚀刻，以对透明导电氧化物层进行纹理化。 为了调整纹理的形状，可以使用不同的湿蚀刻化学物质。 可以使用不同的蚀刻化学物质来形成透明导电氧化物的表面和蚀刻速率。

公开(公告)号：US08361835B2

公开(公告)日：2013-01-29

申请号：US12748790

申请日：2010-03-29

申请人： Valery V. Komin ,  Hien-Minh Huu Le ,  David Tanner ,  James S. Papanu ,  Philip A. Greene ,  Suresh M. Shrauti ,  Roman Gouk ,  Steven Verhaverbeke

发明人： Valery V. Komin ,  Hien-Minh Huu Le ,  David Tanner ,  James S. Papanu ,  Philip A. Greene ,  Suresh M. Shrauti ,  Roman Gouk ,  Steven Verhaverbeke

IPC分类号： H01L21/00

CPC分类号： C23C14/086 ,  C23C14/541 ,  C23C14/56 ,  C23C14/5846 ,  H01L31/022466 ,  H01L31/022483 ,  H01L31/02366 ,  H01L31/03921 ,  H01L31/056 ,  H01L31/075 ,  H01L31/1884 ,  Y02E10/52 ,  Y02E10/548

摘要： Embodiments disclosed herein generally relate to a process of depositing a transparent conductive oxide layer over a substrate. The transparent oxide layer is sometimes deposited onto a substrate for later use in a solar cell device. The transparent conductive oxide layer may be deposited by a “cold” sputtering process. In other words, during the sputtering process, a plasma is ignited in the processing chamber which naturally heats the substrate. No additional heat is provided to the substrate during deposition such as from the susceptor. After the transparent conductive oxide layer is deposited, the substrate may be annealed and etched, in either order, to texture the transparent conductive oxide layer. In order to tailor the shape of the texturing, different wet etch chemistries may be utilized. The different etch chemistries may be used to shape the surface of the transparent conductive oxide and the etch rate.

摘要翻译： 本文公开的实施例通常涉及在衬底上沉积透明导电氧化物层的工艺。 透明氧化物层有时沉积在衬底上，以供以后用于太阳能电池器件中。 可以通过冷溅射工艺沉积透明导电氧化物层。 换句话说，在溅射过程中，在处理室中点燃等离子体，其自然地加热基板。 在诸如从感受器的沉积期间不会向衬底提供额外的热量。 在沉积透明导电氧化物层之后，可以以任何顺序对衬底进行退火和蚀刻，以对透明导电氧化物层进行纹理化。 为了调整纹理的形状，可以使用不同的湿蚀刻化学物质。 可以使用不同的蚀刻化学物质来形成透明导电氧化物的表面和蚀刻速率。

公开(公告)号：US20100028813A1

公开(公告)日：2010-02-04

申请号：US12185595

申请日：2008-08-04

申请人： Banqiu Wu ,  Ajay Kumar ,  Amitabh Sabharwal ,  Roman Gouk ,  James S. Papanu

发明人： Banqiu Wu ,  Ajay Kumar ,  Amitabh Sabharwal ,  Roman Gouk ,  James S. Papanu

IPC分类号： G03F7/20 ,  B08B13/00 ,  B08B7/00 ,  B08B3/12

CPC分类号： G03F1/82 ,  G03F1/44 ,  G03F1/64

摘要： A pellicle cover, system, and method for cleaning a photomask are disclosed. A pellicle cover is disposed over a photomask and pellicle without damaging the markings surrounding the mask pattern area. The pellicle cover can be practicably implemented in an improved photomask cleaning system and process in which the backside of the photomask may be cleaned without removing the pellicle from the patterned surface.

摘要翻译： 公开了一种用于清洁光掩模的防护薄膜组件盖，系统和方法。 防护薄膜组件设置在光掩模和防护薄膜组件上，而不会损坏围绕图案区域的标记。 防护薄膜组件盖可以在改进的光掩模清洁系统和其中可以清洁光掩模的背面而不从图案化表面去除防护薄膜的工艺实现。

公开(公告)号：US20090255555A1

公开(公告)日：2009-10-15

申请号：US12082750

申请日：2008-04-14

申请人： Roman Gouk ,  Chung-Huan Jeon ,  Zhiyong Li ,  Madhava Rao Yalamanchili ,  James S. Papanu

发明人： Roman Gouk ,  Chung-Huan Jeon ,  Zhiyong Li ,  Madhava Rao Yalamanchili ,  James S. Papanu

IPC分类号： B08B3/12 ,  B08B13/00

CPC分类号： B08B3/12 ,  B08B3/02 ,  B08B7/028 ,  G03F1/82 ,  H01L21/67051

摘要： A method and apparatus for cleaning a workpiece are disclosed. A gas and cleaning solution are supplied to an atomizing nozzle which atomizes the cleaning solution and sprays the top surface of a workpiece with an atomized spray. A liquid having a controlled gas content is flowed to the top surface of the workpiece from a rinse nozzle. Megasonic energy is applied from the backside of the workpiece.

摘要翻译： 公开了一种用于清洁工件的方法和设备。 将气体和清洁溶液供应到雾化喷嘴，该雾化喷嘴使清洁溶液雾化并用雾化喷雾喷射工件的顶表面。 具有受控气体含量的液体从冲洗喷嘴流到工件的顶表面。 从工件的背面施加超声波能量。

公开(公告)号：US20100311228A1

公开(公告)日：2010-12-09

申请号：US12748780

申请日：2010-03-29

申请人： VALERY V. KOMIN ,  Hien-Minh Huu Le ,  David Tanner ,  James S. Papanu ,  Philip A. Greene ,  Suresh M. Shrauti ,  Roman Gouk ,  Steven Verhaverbeke

发明人： VALERY V. KOMIN ,  Hien-Minh Huu Le ,  David Tanner ,  James S. Papanu ,  Philip A. Greene ,  Suresh M. Shrauti ,  Roman Gouk ,  Steven Verhaverbeke

IPC分类号： H01L21/3213 ,  H01L21/20

CPC分类号： C23C14/086 ,  C23C14/5806 ,  C23C14/5873 ,  H01L31/022466 ,  H01L31/0236 ,  H01L31/02366 ,  H01L31/03682 ,  H01L31/03685 ,  H01L31/03762 ,  H01L31/03921 ,  H01L31/056 ,  H01L31/075 ,  H01L31/077 ,  H01L31/1864 ,  H01L31/1884 ,  Y02E10/52 ,  Y02E10/545 ,  Y02E10/546 ,  Y02E10/548 ,  Y02P70/521

摘要： Embodiments disclosed herein generally relate to a process of depositing a transparent conductive oxide layer over a substrate. The transparent oxide layer is sometimes deposited onto a substrate for later use in a solar cell device. The transparent conductive oxide layer may be deposited by a “cold” sputtering process. In other words, during the sputtering process, a plasma is ignited in the processing chamber which naturally heats the substrate. No additional heat is provided to the substrate during deposition such as from the susceptor. After the transparent conductive oxide layer is deposited, the substrate may be annealed and etched, in either order, to texture the transparent conductive oxide layer. In order to tailor the shape of the texturing, different wet etch chemistries may be utilized. The different etch chemistries may be used to shape the surface of the transparent conductive oxide and the etch rate.