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    Post-ion implant cleaning for silicon on insulator substrate preparation
    2.
    发明授权
    Post-ion implant cleaning for silicon on insulator substrate preparation 失效
    用于硅绝缘体衬底制备的离子后植入物清洁

    公开(公告)号：US07432177B2

    公开(公告)日：2008-10-07

    申请号：US11154211

    申请日：2005-06-15

    申请人： James S. Papanu ,  Han-Wen Chen ,  Brian J. Brown ,  Steven Verhaverbeke

    发明人： James S. Papanu ,  Han-Wen Chen ,  Brian J. Brown ,  Steven Verhaverbeke

    IPC分类号： H01L21/04

    CPC分类号： H01L21/02057 ,  Y10S438/906 ,  Y10S438/907 ,  Y10S438/908 ,  Y10S438/928

    摘要： A combination of a dry oxidizing, wet etching, and wet cleaning processes are used to remove particle defects from a wafer after ion implantation, as part of a wafer bonding process to fabricate a SOI wafer. The particle defects on the topside and the backside of the wafer are oxidized, in a dry strip chamber, with an energized gas. In a wet clean chamber, the backside of the wafer is treated with an etchant solution to remove completely or partially a thermal silicon oxide layer, followed by exposure of the topside and the backside to a cleaning solution. The cleaning solution contains ammonium hydroxide, hydrogen peroxide, DI water, and optionally a chelating agent, and a surfactant. The wet clean chamber is integrated with the dry strip chamber and contained in a single wafer processing system.

    摘要翻译： 干法氧化，湿蚀刻和湿法清洗工艺的组合被用于在离子注入之后从晶片去除颗粒缺陷，作为制造SOI晶片的晶片接合工艺的一部分。 晶片顶面和背面的颗粒缺陷在干燥条带室中被激发的气体氧化。 在湿式清洁室中，用蚀刻剂溶液处理晶片的背面以完全或部分地去除热氧化硅层，随后将顶侧和背面暴露于清洁溶液中。 清洗液含有氢氧化铵，过氧化氢，去离子水，任选的螯合剂和表面活性剂。 湿式清洁室与干燥条带室一体化，并包含在单个晶片处理系统中。

    Post-ion implant cleaning for silicon on insulator substrate preparation
    3.
    发明授权
    Post-ion implant cleaning for silicon on insulator substrate preparation 失效
    用于硅绝缘体衬底制备的离子后植入物清洁

    公开(公告)号：US07914623B2

    公开(公告)日：2011-03-29

    申请号：US11977701

    申请日：2007-10-24

    申请人： James S. Papanu ,  Han-Wen Chen ,  Brian J. Brown ,  Steven Verhaverbeke

    发明人： James S. Papanu ,  Han-Wen Chen ,  Brian J. Brown ,  Steven Verhaverbeke

    IPC分类号： H01L21/461

    CPC分类号： H01L21/02057 ,  Y10S438/906 ,  Y10S438/907 ,  Y10S438/908 ,  Y10S438/928

    摘要： A combination of a dry oxidizing, wet etching, and wet cleaning processes are used to remove particle defects from a wafer after ion implantation, as part of a wafer bonding process to fabricate a SOI wafer. The particle defects on the topside and the backside of the wafer are oxidized, in a dry strip chamber, with an energized gas. In a wet clean chamber, the backside of the wafer is treated with an etchant solution to remove completely or partially a thermal silicon oxide layer, followed by exposure of the topside and the backside to a cleaning solution. The cleaning solution contains ammonium hydroxide, hydrogen peroxide, DI water, and optionally a chelating agent, and a surfactant. The wet clean chamber is integrated with the dry strip chamber and contained in a single wafer processing system.

    摘要翻译： 干法氧化，湿蚀刻和湿法清洗工艺的组合被用于在离子注入之后从晶片去除颗粒缺陷，作为制造SOI晶片的晶片接合工艺的一部分。 晶片顶面和背面的颗粒缺陷在干燥条带室中被激发的气体氧化。 在湿式清洁室中，用蚀刻剂溶液处理晶片的背面以完全或部分地去除热氧化硅层，随后将顶侧和背面暴露于清洁溶液中。 清洗液含有氢氧化铵，过氧化氢，去离子水，任选的螯合剂和表面活性剂。 湿式清洁室与干燥条带室一体化，并包含在单个晶片处理系统中。

    PROCESS AND HARDWARE FOR PLASMA TREATMENTS
    4.
    发明申请
    PROCESS AND HARDWARE FOR PLASMA TREATMENTS 审中-公开
    等离子体处理的工艺和硬件

    公开(公告)号：US20100104953A1

    公开(公告)日：2010-04-29

    申请号：US12258271

    申请日：2008-10-24

    申请人： James S. Papanu ,  Roman Gouk ,  Han-Wen Chen ,  Phillip Peters

    发明人： James S. Papanu ,  Roman Gouk ,  Han-Wen Chen ,  Phillip Peters

    IPC分类号： G03F1/00

    CPC分类号： G03F7/168 ,  G03F1/82 ,  G03F7/427

    摘要： A H2O vapor based dry plasma process for pre-treating and strip-cleaning a reticle, a three layer gas distribution plate (GDP) assembly to control the heat load to the reticle during the plasma process, and a modified hole pattern for the GDP that further enhances stripping of resist from the edges of the reticle are disclosed.

    摘要翻译： 基于H 2 O蒸汽的干法等离子体处理，用于预处理和剥离掩模版，三层气体分配板（GDP）组件，用于控制等离子体工艺期间对掩模版的热负荷，以及改进的孔模式用于GDP， 公开了进一步增强抗蚀剂从掩模版的边缘的剥离。

    Method for forming transparent conductive oxide
    7.
    发明授权
    Method for forming transparent conductive oxide 有权
    形成透明导电氧化物的方法

    公开(公告)号：US08361835B2

    公开(公告)日：2013-01-29

    申请号：US12748790

    申请日：2010-03-29

    申请人： Valery V. Komin ,  Hien-Minh Huu Le ,  David Tanner ,  James S. Papanu ,  Philip A. Greene ,  Suresh M. Shrauti ,  Roman Gouk ,  Steven Verhaverbeke

    发明人： Valery V. Komin ,  Hien-Minh Huu Le ,  David Tanner ,  James S. Papanu ,  Philip A. Greene ,  Suresh M. Shrauti ,  Roman Gouk ,  Steven Verhaverbeke

    IPC分类号： H01L21/00

    CPC分类号： C23C14/086 ,  C23C14/541 ,  C23C14/56 ,  C23C14/5846 ,  H01L31/022466 ,  H01L31/022483 ,  H01L31/02366 ,  H01L31/03921 ,  H01L31/056 ,  H01L31/075 ,  H01L31/1884 ,  Y02E10/52 ,  Y02E10/548

    摘要： Embodiments disclosed herein generally relate to a process of depositing a transparent conductive oxide layer over a substrate. The transparent oxide layer is sometimes deposited onto a substrate for later use in a solar cell device. The transparent conductive oxide layer may be deposited by a “cold” sputtering process. In other words, during the sputtering process, a plasma is ignited in the processing chamber which naturally heats the substrate. No additional heat is provided to the substrate during deposition such as from the susceptor. After the transparent conductive oxide layer is deposited, the substrate may be annealed and etched, in either order, to texture the transparent conductive oxide layer. In order to tailor the shape of the texturing, different wet etch chemistries may be utilized. The different etch chemistries may be used to shape the surface of the transparent conductive oxide and the etch rate.

    摘要翻译： 本文公开的实施例通常涉及在衬底上沉积透明导电氧化物层的工艺。 透明氧化物层有时沉积在衬底上，以供以后用于太阳能电池器件中。 可以通过冷溅射工艺沉积透明导电氧化物层。 换句话说，在溅射过程中，在处理室中点燃等离子体，其自然地加热基板。 在诸如从感受器的沉积期间不会向衬底提供额外的热量。 在沉积透明导电氧化物层之后，可以以任何顺序对衬底进行退火和蚀刻，以对透明导电氧化物层进行纹理化。 为了调整纹理的形状，可以使用不同的湿蚀刻化学物质。 可以使用不同的蚀刻化学物质来形成透明导电氧化物的表面和蚀刻速率。

    METHODS TO ACCELERATE PHOTOIMAGEABLE MATERIAL STRIPPING FROM A SUBSTRATE
    8.
    发明申请
    METHODS TO ACCELERATE PHOTOIMAGEABLE MATERIAL STRIPPING FROM A SUBSTRATE 审中-公开
    从基板加速可光化材料剥离的方法

    公开(公告)号：US20080078424A1

    公开(公告)日：2008-04-03

    申请号：US11536292

    申请日：2006-09-28

    申请人： Roman Gouk ,  Phillip Peters ,  Han-Wen Chen ,  James S. Papanu

    发明人： Roman Gouk ,  Phillip Peters ,  Han-Wen Chen ,  James S. Papanu

    IPC分类号： B08B3/00

    CPC分类号： H01L21/67028 ,  G03F7/423 ,  H01L21/67051 ,  H01L21/67057 ,  H01L21/6708

    摘要： Embodiments of methods for decreasing the process time for photoresist stripping from photomasks are herein disclosed. In some embodiments, a stripping solution and a cleaning solution are consecutively applied in an alternating manner to a photomask to remove photoresist from the mask. The stripping solution and the cleaning solution can each be applied between 6 and 12 times. The stripping solution and the cleaning solution can be applied in a predetermined time interval from about 30 seconds to about 120 seconds and from about 8 seconds to about 30 seconds, respectively. The process can include a finishing process which can include a final cleaning operation, a rinsing operation and a drying operation.

    摘要翻译： 本文公开了用于降低光致抗蚀剂从光掩模剥离的处理时间的方法的实施方案。 在一些实施方案中，剥离溶液和清洁溶液以交替方式连续施加到光掩模以从掩模中除去光致抗蚀剂。 剥离溶液和清洗溶液各自可以施加6-12次。 剥离溶液和清洁溶液可以分别以约30秒至约120秒和约8秒至约30秒的预定时间间隔施加。 该方法可以包括可以包括最终清洁操作，漂洗操作和干燥操作的精加工过程。

    BACKSIDE CLEANING OF SUBSTRATE
    10.
    发明申请
    BACKSIDE CLEANING OF SUBSTRATE 审中-公开
    基板的背面清洁

    公开(公告)号：US20100028813A1

    公开(公告)日：2010-02-04

    申请号：US12185595

    申请日：2008-08-04

    申请人： Banqiu Wu ,  Ajay Kumar ,  Amitabh Sabharwal ,  Roman Gouk ,  James S. Papanu

    发明人： Banqiu Wu ,  Ajay Kumar ,  Amitabh Sabharwal ,  Roman Gouk ,  James S. Papanu

    IPC分类号： G03F7/20 ,  B08B13/00 ,  B08B7/00 ,  B08B3/12

    CPC分类号： G03F1/82 ,  G03F1/44 ,  G03F1/64

    摘要： A pellicle cover, system, and method for cleaning a photomask are disclosed. A pellicle cover is disposed over a photomask and pellicle without damaging the markings surrounding the mask pattern area. The pellicle cover can be practicably implemented in an improved photomask cleaning system and process in which the backside of the photomask may be cleaned without removing the pellicle from the patterned surface.

    摘要翻译： 公开了一种用于清洁光掩模的防护薄膜组件盖，系统和方法。 防护薄膜组件设置在光掩模和防护薄膜组件上，而不会损坏围绕图案区域的标记。 防护薄膜组件盖可以在改进的光掩模清洁系统和其中可以清洁光掩模的背面而不从图案化表面去除防护薄膜的工艺实现。