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7 条记录 (耗时 0.022 秒)

    Method for selective deposition of tungsten by chemical vapor deposition onto metal and semiconductor surfaces
    1.
    发明授权
    Method for selective deposition of tungsten by chemical vapor deposition onto metal and semiconductor surfaces 失效
    通过化学气相沉积在金属和半导体表面上选择性沉积钨的方法

    公开(公告)号：US4741928A

    公开(公告)日：1988-05-03

    申请号：US036956

    申请日：1987-04-10

    申请人： Ronald H. Wilson ,  Robert W. Stoll ,  Herbert R. Philipp

    发明人： Ronald H. Wilson ,  Robert W. Stoll ,  Herbert R. Philipp

    IPC分类号： C23C16/04 ,  C23C16/48 ,  H01L21/268 ,  H01L21/285 ,  C23C16/06 ,  C23C16/08

    CPC分类号： C23C16/04 ,  C23C16/481 ,  H01L21/268 ,  H01L21/28562

    摘要： A method and heating apparatus are provided for selectively depositing metal films, such as tungsten, on the metal and semi-conductor surfaces of a silicon wafer by chemical vapor deposition. The method and heating apparatus serve to isolate the depositing surface of silicon wafers from both infrared radiation and the nucleating species which are vaporized by hot surfaces within the reaction chamber by means of a barrier which reflects or absorbs infrared radiation and condenses vaporized nucleating species before a nucleate metal deposition sites on metal or semiconductor surfaces.

    摘要翻译： 提供了一种方法和加热装置，用于通过化学气相沉积在硅晶片的金属和半导体表面上选择性地沉积诸如钨的金属膜。 所述方法和加热装置用于将硅晶片的沉积表面与红外辐射和成核物质隔离，所述成核物质通过反射或吸收红外辐射并在蒸发的成核物质之前冷凝的屏障反应室内的热表面而蒸发 在金属或半导体表面上成核金属沉积点。

    Method of improving varistor upturn characteristics
    4.
    发明授权
    Method of improving varistor upturn characteristics 失效
    提高变阻器上翘特性的方法

    公开(公告)号：US4219518A

    公开(公告)日：1980-08-26

    申请号：US905589

    申请日：1978-05-15

    申请人： Herbert R. Philipp

    发明人： Herbert R. Philipp

    IPC分类号： H01C7/10 ,  H01C7/108 ,  H01C7/112 ,  H01C17/30 ,  C04B35/64

    CPC分类号： H01C7/112 ,  H01C17/30 ,  H01C7/108

    摘要： A method for producing varistors exhibiting improved upturn characteristics comprises controllably heating a pressed varistor powder mix to a temperature, and for a time, sufficient to form a ceramic material, and then quenching the ceramic material at a rate in excess of approximately 500.degree. C. per hour. The method is particularly advantageous when dopants such as aluminum, antimony, indium, and gallium are employed. Additionally, a surge arrester is disclosed comprising a varistor connected in series with a spark gap, the varistor being produced in accordance with the aforementioned quenching method.

    摘要翻译： 一种制造具有改善的上翘特性的压敏电阻的方法包括将压制的变阻器粉末混合物可控制地加热到足以形成陶瓷材料的温度和时间，然后以超过约500℃的速率淬火陶瓷材料。 每小时。 当使用诸如铝，锑，铟和镓的掺杂剂时，该方法是特别有利的。 此外，公开了一种电涌放电器，包括与火花隙串联连接的变阻器，根据上述淬火方法制造压敏电阻。

    Polycrystalline varistors with reduced overshoot
    5.
    发明授权
    Polycrystalline varistors with reduced overshoot 失效
    多晶压敏电阻具有减小的过冲

    公开(公告)号：US4157527A

    公开(公告)日：1979-06-05

    申请号：US843793

    申请日：1977-10-20

    申请人： Herbert R. Philipp

    发明人： Herbert R. Philipp

    IPC分类号： H01C7/102 ,  H01C7/10

    CPC分类号： H01C7/102

    摘要： A metal oxide varistor structure having a reduced voltage overshoot is disclosed. In accordance with one embodiment of the invention, the varistor disk, for example, is provided with a relatively small region of reduced thickness, the amount of said thickness reduction being dependent upon the original thickness of the varistor substrate. The area of region of reduced thickness is selected to control conduction duration in the region of reduced thickness.

    摘要翻译： 公开了一种具有降低的电压过冲的金属氧化物变阻器结构。 根据本发明的一个实施例，例如，压敏电阻盘设置有相对较小的厚度减小的区域，所述厚度减小量取决于压敏电阻衬底的原始厚度。 选择厚度减小的区域来控制厚度减小的区域中的导电持续时间。

    Metal oxide varistor with controllable breakdown voltage and capacitance and method of making
    6.
    发明授权
    Metal oxide varistor with controllable breakdown voltage and capacitance and method of making 失效
    具有可控击穿电压和电容的金属氧化物变阻器及其制造方法

    公开(公告)号：US4495482A

    公开(公告)日：1985-01-22

    申请号：US504770

    申请日：1983-06-16

    申请人： Herbert R. Philipp

    发明人： Herbert R. Philipp

    IPC分类号： H01C7/112 ,  H01C7/12

    CPC分类号： H01C7/112 ,  Y10T29/49101

    摘要： A metal oxide varistor with controllable breakdown voltage and capacitance characteristics is fabricated by controlled diffusion of lithium into conventional metal oxide varistor material at elevated temperature. The varistor layer containing lithium exhibits an increased breakdown voltage, lowered capacitance, and low leakage current while maintaining a high coefficient of nonlinearity.

    摘要翻译： 具有可控击穿电压和电容特性的金属氧化物变阻器通过在升高的温度下将锂控制扩散到常规金属氧化物变阻器材料中来制造。 含有锂的压敏电阻层在保持高非线性系数的同时表现出增加的击穿电压，降低的电容和低的漏电流。