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    METHOD OF FILLING A DEEP TRENCH IN A SUBSTRATE
    4.
    发明申请
    METHOD OF FILLING A DEEP TRENCH IN A SUBSTRATE 审中-公开
    在基底中填充深层TRENCH的方法

    公开(公告)号：US20110217832A1

    公开(公告)日：2011-09-08

    申请号：US12879924

    申请日：2010-09-10

    申请人： Digvijay Raorane ,  Khalid M. Sirajuddin ,  Jon C. Farr ,  Sharma V. Pamarthy

    发明人： Digvijay Raorane ,  Khalid M. Sirajuddin ,  Jon C. Farr ,  Sharma V. Pamarthy

    IPC分类号： H01L21/3205 ,  H01L21/283

    CPC分类号： H01L21/31116 ,  H01L21/76831 ,  H01L21/76898

    摘要： Methods of filling deep trenches in substrates are described. A method includes providing a substrate with a deep trench formed therein. The method also includes forming a dielectric layer conformal with the substrate and the deep trench. The method also includes, with the entire portion of the dielectric layer conformal with the deep trench exposed, removing at least a portion, but not all, of the dielectric layer at the top of the deep trench with a relatively low bias plasma etch process.

    摘要翻译： 描述了在衬底中填充深沟槽的方法。 一种方法包括提供其中形成有深沟槽的衬底。 该方法还包括形成与衬底和深沟槽共形的电介质层。 该方法还包括，电介质层的整个部分与暴露的深沟槽保持一致，用相对低的偏压等离子体蚀刻工艺在深沟槽的顶部除去介电层的至少一部分但不是全部。

    Method of forming a deep trench in a substrate
    5.
    发明授权
    Method of forming a deep trench in a substrate 失效
    在衬底中形成深沟槽的方法

    公开(公告)号：US08158522B2

    公开(公告)日：2012-04-17

    申请号：US12879874

    申请日：2010-09-10

    申请人： Khalid M. Sirajuddin ,  Digvijay Raorane ,  Jon C. Farr ,  Sharma V. Pamarthy

    发明人： Khalid M. Sirajuddin ,  Digvijay Raorane ,  Jon C. Farr ,  Sharma V. Pamarthy

    IPC分类号： H01L21/311

    CPC分类号： H01L21/76232 ,  H01L21/3086

    摘要： Methods of forming deep trenches in substrates are described. A method includes providing a substrate with a patterned film disposed thereon, the patterned film including a trench having a first width and a pair of sidewalls, the trench exposing the top surface of the substrate. The method also includes forming a material layer over the patterned film and conformal with the trench. The method also includes etching the material layer to form sidewall spacers along the pair of sidewalls of the trench, the sidewall spacers reducing the first width of the trench to a second width. The method also includes etching the substrate to form a deep trench in the substrate, the deep trench undercutting at least a portion of the sidewall spacers.

    摘要翻译： 描述了在衬底中形成深沟槽的方法。 一种方法包括提供其上设置有图案化膜的衬底，所述图案化膜包括具有第一宽度和一对侧壁的沟槽，所述沟槽暴露衬底的顶表面。 该方法还包括在图案化膜上形成材料层并与沟槽保形。 该方法还包括蚀刻材料层以沿着沟槽的一对侧壁形成侧壁间隔物，侧壁间隔物将沟槽的第一宽度减小到第二宽度。 该方法还包括蚀刻衬底以在衬底中形成深沟槽，深沟槽底切侧壁间隔物的至少一部分。

    METHOD OF FORMING A DEEP TRENCH IN A SUBSTRATE
    6.
    发明申请
    METHOD OF FORMING A DEEP TRENCH IN A SUBSTRATE 失效
    在基材中形成深层TRENCH的方法

    公开(公告)号：US20110201205A1

    公开(公告)日：2011-08-18

    申请号：US12879874

    申请日：2010-09-10

    申请人： Khalid M. Sirajuddin ,  Digvijay Raorane ,  Jon C. Farr ,  Sharma V. Pamarthy

    发明人： Khalid M. Sirajuddin ,  Digvijay Raorane ,  Jon C. Farr ,  Sharma V. Pamarthy

    IPC分类号： H01L21/302

    CPC分类号： H01L21/76232 ,  H01L21/3086

    摘要： Methods of forming deep trenches in substrates are described. A method includes providing a substrate with a patterned film disposed thereon, the patterned film including a trench having a first width and a pair of sidewalls, the trench exposing the top surface of the substrate. The method also includes forming a material layer over the patterned film and conformal with the trench. The method also includes etching the material layer to form sidewall spacers along the pair of sidewalls of the trench, the sidewall spacers reducing the first width of the trench to a second width. The method also includes etching the substrate to form a deep trench in the substrate, the deep trench undercutting at least a portion of the sidewall spacers.

    摘要翻译： 描述了在衬底中形成深沟槽的方法。 一种方法包括提供其上设置有图案化膜的衬底，所述图案化膜包括具有第一宽度和一对侧壁的沟槽，所述沟槽暴露衬底的顶表面。 该方法还包括在图案化膜上形成材料层并与沟槽保形。 该方法还包括蚀刻材料层以沿着沟槽的一对侧壁形成侧壁间隔物，侧壁间隔物将沟槽的第一宽度减小到第二宽度。 该方法还包括蚀刻衬底以在衬底中形成深沟槽，深沟槽底切侧壁间隔物的至少一部分。

    Method for etching high-aspect-ratio features
    7.
    发明授权
    Method for etching high-aspect-ratio features 失效
    蚀刻高纵横比特征的方法

    公开(公告)号：US06897155B2

    公开(公告)日：2005-05-24

    申请号：US10219885

    申请日：2002-08-14

    申请人： Ajay Kumar ,  Anisul H. Khan ,  Dragan Podlesnik ,  Sharma V. Pamarthy ,  Axel Henke ,  Stephan Wege ,  Virinder Grewal

    发明人： Ajay Kumar ,  Anisul H. Khan ,  Dragan Podlesnik ,  Sharma V. Pamarthy ,  Axel Henke ,  Stephan Wege ,  Virinder Grewal

    IPC分类号： H01L21/302 ,  H01L21/3065 ,  H01L21/461

    CPC分类号： H01J37/32082 ,  H01J2237/3347 ,  H01L21/3065 ,  H01L21/30655

    摘要： A method for operating a plasma reactor to etch high-aspect-ratio features on a workpiece in a vacuum chamber. The method comprises the performance of an etch process followed by a flash process. During the etch process, a first gas is supplied into the vacuum chamber, and a plasma of the first gas is maintained for a first period of time. The plasma of the first gas comprises etchant and passivant species. During the flash process, a second gas comprising a deposit removal gas is supplied into the vacuum chamber, and a plasma of the second gas is maintained for a second period of time. The DC voltage between the workpiece and the plasma of the second gas during the second period of time is significantly less than the DC voltage between the workpiece and the plasma of the first gas during the first period of time.

    摘要翻译： 一种用于操作等离子体反应器以蚀刻真空室中的工件上的高纵横比特征的方法。 该方法包括执行闪光处理之后的蚀刻工艺。 在蚀刻工艺期间，将第一气体供应到真空室中，并且第一气体的等离子体保持第一时间段。 第一气体的等离子体包括蚀刻剂和钝化物质。 在闪蒸过程中，将包含沉积物去除气体的第二气体供应到真空室中，并且将第二气体的等离子体保持第二时间段。 在第二时间段期间，工件与第二气体的等离子体之间的直流电压明显小于在第一时间段内第一气体的工件和等离子体之间的直流电压。