摘要:
Embodiments of the present invention relate to method and apparatus for providing processing gases to a process chamber with improved plasma dissociation efficiency. One embodiment of the present invention provides a baffle nozzle assembly comprising an outer body defining an extension volume connected to a processing chamber. A processing gas is flown to the processing chamber through the extension volume which is exposed to power source for plasma generation.
摘要:
Embodiments of the present invention relate to method and apparatus for providing processing gases to a process chamber with improved plasma dissociation efficiency. One embodiment of the present invention provides a baffle nozzle assembly comprising an outer body defining an extension volume connected to a processing chamber. A processing gas is flown to the processing chamber through the extension volume which is exposed to power source for plasma generation.
摘要:
Embodiments of the invention relate to a substrate etching system and process. In one embodiment, a method may include depositing material on the substrate during a deposition process, etching a first layer of the substrate during a first etch process, and etching a second layer of the substrate during a second etch process, wherein a first bias power is applied to the substrate during the first process, and wherein a second bias power is applied to the substrate during the second etch process. In another embodiment, a system may include a gas delivery system containing a first gas panel for supplying a first gas to a chamber, a second gas panel for supplying a second gas to the chamber, and a plurality of flow controllers for directing the gases to the chamber to facilitate rapid gas transitioning between the gases to and from the chamber and the panels.
摘要:
Embodiments of the invention relate to a gas delivery system. The gas delivery system includes a fast gas exchange module in fluid communication with one or more gas panels and a process chamber. The fast gas exchange module has first and second sets of flow controllers and each of first and second sets of flow controllers has multiple flow controllers. The flow controller is configured such that each of the flow controllers in the first and second sets of the flow controllers is independently operated to selectively open to divert gas to the process chamber or an exhaust. The first and second sets of flow controllers are operated for synchronized switching of gases in a pre-determined timed sequence of flow controller actuation. The invention enables fast switch of resultant gas flow in the process chamber while having individual flow controller operated at lower switching speed to provide longer service life.
摘要:
Embodiments of the present invention relate to a plasma chamber having a coil assembly which improves plasma uniformity and improves power coupling to the plasma. One embodiment provides a plasma chamber. The plasma chamber includes a chamber body having sidewalls and a lid, wherein the chamber body defines a processing volume. The plasma chamber further includes a coil assembly disposed over the lid configured to generate inductively coupled plasma within the processing volume, wherein the coil assembly comprises two or more horizontal coils arranged in a common horizontal plane.
摘要:
Embodiments of the present invention relate to a plasma chamber having a coil assembly which improves plasma uniformity and improves power coupling to the plasma. One embodiment provides a plasma chamber. The plasma chamber includes a chamber body having sidewalls and a lid, wherein the chamber body defines a processing volume. The plasma chamber further includes a coil assembly disposed over the lid configured to generate inductively coupled plasma within the processing volume, wherein the coil assembly comprises two or more horizontal coils arranged in a common horizontal plane.
摘要:
Methods of dicing substrates having a plurality of ICs. A method includes forming a mask comprising a water soluble material layer over the semiconductor substrate. The mask is patterned with a femtosecond laser scribing process to provide a patterned mask with gaps. The patterning exposes regions of the substrate between the ICs. The substrate is then etched through the gaps in the patterned mask to singulate the IC and the water soluble material layer washed off.
摘要:
Methods of dicing semiconductor wafers, each wafer having a plurality of integrated circuits, are described. A method includes forming a mask above the semiconductor wafer. The mask is composed of a layer covering and protecting the integrated circuits. The mask is patterned with a femtosecond-based laser scribing process to provide a patterned mask with gaps. The patterning exposes regions of the semiconductor wafer between the integrated circuits. The semiconductor wafer is then etched through the gaps in the patterned mask to singulate the integrated circuits.
摘要:
Methods of dicing semiconductor wafers, each wafer having a plurality of integrated circuits, are described. A method includes forming a mask above the semiconductor wafer, the mask composed of a layer covering and protecting the integrated circuits. The semiconductor wafer is supported by a substrate carrier. The mask is then patterned with a laser scribing process to provide a patterned mask with gaps, exposing regions of the semiconductor wafer between the integrated circuits. The semiconductor wafer is then etched through the gaps in the patterned mask to singulate the integrated circuits while supported by the substrate carrier.
摘要:
Embodiments described herein provide apparatus and methods of etching a substrate using an ion etch chamber having a movable aperture. The ion etch chamber has a chamber body enclosing a processing region, a substrate support disposed in the processing region and having a substrate receiving surface, a plasma source disposed at a wall of the chamber body facing the substrate receiving surface, an ion-radical shield disposed between the plasma source and the substrate receiving surface, and a movable aperture member between the ion-radical shield and the substrate receiving surface. The movable aperture member is actuated by a lift assembly comprising a lift ring and lift supports from the lift ring to the aperture member. The ion-radical shield is supported by shield supports disposed through the aperture member. The aperture size, shape, and/or central axis location may be changed using inserts.