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    Etching method for silicon substrates and semiconductor sensor
    3.
    发明授权
    Etching method for silicon substrates and semiconductor sensor 失效
    硅衬底和半导体传感器的蚀刻方法

    公开(公告)号：US5949118A

    公开(公告)日：1999-09-07

    申请号：US637128

    申请日：1996-04-24

    申请人： Minekazu Sakai ,  Tsuyoshi Fukada ,  Koki Mizuno ,  Yasutoshi Suzuki ,  Yoshitsugu Abe ,  Hiroshi Tanaka ,  Motoki Ito ,  Kazuhisa Ikeda ,  Hiroshi Okada

    发明人： Minekazu Sakai ,  Tsuyoshi Fukada ,  Koki Mizuno ,  Yasutoshi Suzuki ,  Yoshitsugu Abe ,  Hiroshi Tanaka ,  Motoki Ito ,  Kazuhisa Ikeda ,  Hiroshi Okada

    IPC分类号： G01L9/00 ,  H01L29/84 ,  H01L29/82

    CPC分类号： G01L9/0042 ,  H01L29/84 ,  Y10S438/977

    摘要： An etching method for a silicon substrate, which can easily smooth the etching surface of the (110)-oriented silicon, is disclosed. A container is filled with KOH solution. In the KOH solution is immersed a (110)-oriented silicon wafer having a PN junction and is also disposed a platinum electrode plate to face the silicon wafer. To between a platinum electrode of the silicon wafer and the platinum electrode plate are connected a constant voltage power source, an ammeter and a contact in series. A controller starts etching from one surface on which the PN junction is formed, and terminates voltage application when the specified time lapses after the formation of an anodic oxide film is equilibrated with the etching of the anodic oxide film on the etching surface on the PN junction part. In this case, the controller detects flowing current through the ammeter, and the point of time when the equilibrium state is obtained is the point of inflection of the detected current to the constant current after the peak thereof.

    摘要翻译： 公开了一种可以容易地平滑（110）取向的硅的蚀刻表面的硅衬底的蚀刻方法。 容器中充满KOH溶液。 在KOH溶液中浸渍具有PN结的（110）取向的硅晶片，并且还设置有与铂晶片相对的铂电极板。 在硅晶片的铂电极和铂电极板之间连接恒压电源，电流表和触点串联。 控制器从其上形成PN结的一个表面开始蚀刻，并且在阳极氧化膜形成之后指定的时间经过平衡后，在PN结的蚀刻表面上蚀刻阳极氧化膜来终止电压施加 部分。 在这种情况下，控制器检测通过电流表的流动电流，并且获得平衡状态的时间点是检测电流在其峰值之后的恒定电流的拐点。

    Electrochemical etching method for silicon substrate having PN junction
    4.
    发明授权
    Electrochemical etching method for silicon substrate having PN junction 有权
    具有PN结的硅衬底的电化学蚀刻方法

    公开(公告)号：US06194236B1

    公开(公告)日：2001-02-27

    申请号：US09247908

    申请日：1999-02-11

    申请人： Minekazu Sakai ,  Tsuyoshi Fukada ,  Yukihiko Tanizawa ,  Koki Mizuno ,  Yasutoshi Suzuki ,  Yoshitsugu Abe ,  Hiroshi Tanaka ,  Motoki Ito ,  Kazuhisa Ikeda ,  Hiroshi Okada

    发明人： Minekazu Sakai ,  Tsuyoshi Fukada ,  Yukihiko Tanizawa ,  Koki Mizuno ,  Yasutoshi Suzuki ,  Yoshitsugu Abe ,  Hiroshi Tanaka ,  Motoki Ito ,  Kazuhisa Ikeda ,  Hiroshi Okada

    IPC分类号： H01L2166

    CPC分类号： G01L9/0042 ,  H01L29/84 ,  Y10S438/977

    摘要： An etching method for a silicon substrate, which can easily smooth the etching surface of the (110)-oriented silicon, is disclosed. A container is filled with KOH solution. In the KOH solution is immersed a (110)-oriented silicon wafer having a PN junction and is also disposed a platinum electrode plate to face the silicon wafer. To between a platinum electrode of the silicon wafer and the platinum electrode plate are connected a constant voltage power source, an ammeter and a contact in series. A controller starts etching from one surface on which the PN junction is formed, and terminates voltage application when the specified time lapses after the formation of an anodic oxide film is equilibrated with the etching of the anodic oxide film on the etching surface on the PN junction part. In this case, the controller detects flowing current through the ammeter, and the point of time when the equilibrium state is obtained is the point of inflection of the detected current to the constant current after the peak thereof.

    摘要翻译： 公开了一种可以容易地平滑（110）取向的硅的蚀刻表面的硅衬底的蚀刻方法。 容器中充满KOH溶液。 在KOH溶液中浸渍具有PN结的（110）取向的硅晶片，并且还设置有与铂晶片相对的铂电极板。 在硅晶片的铂电极和铂电极板之间连接恒压电源，电流表和触点串联。 控制器从其上形成PN结的一个表面开始蚀刻，并且在阳极氧化膜形成之后指定的时间经过平衡后，在PN结的蚀刻表面上蚀刻阳极氧化膜来终止电压施加 部分。 在这种情况下，控制器检测通过电流表的流动电流，并且获得平衡状态的时间点是检测电流在其峰值之后的恒定电流的拐点。

    CO2 recovery device
    6.
    发明授权
    CO2 recovery device 有权
    CO2回收装置

    公开(公告)号：US09399189B2

    公开(公告)日：2016-07-26

    申请号：US14004708

    申请日：2012-04-11

    申请人： Tatsuya Tsujiuchi ,  Hiroshi Tanaka ,  Hiromitsu Nagayasu ,  Takuya Hirata ,  Tsuyoshi Oishi ,  Masahiko Tatsumi ,  Koji Kadono

    发明人： Tatsuya Tsujiuchi ,  Hiroshi Tanaka ,  Hiromitsu Nagayasu ,  Takuya Hirata ,  Tsuyoshi Oishi ,  Masahiko Tatsumi ,  Koji Kadono

    IPC分类号： B01D53/14

    CPC分类号： B01D53/1425 ,  B01D53/1406 ,  B01D53/1475 ,  B01D2252/204 ,  B01D2257/504 ,  B01D2258/0283 ,  Y02A50/2342 ,  Y02C10/04 ,  Y02C10/06

    摘要： A CO2 recovery device includes a cooling tower including a cooling unit for bringing the flue gas, which contains CO2, into contact with water so as to cool flue gas; a CO2-absorbing unit for bringing the flue gas into contact with a CO2 absorbent (lean solution) so as to remove CO2 from flue gas; and a regenerator including an absorbent regenerating unit for releasing CO2 from a rich solution so as to regenerate the CO2 absorbent. The CO2-absorbing unit includes: a cocurrent flow CO2-absorbing unit provided in a cocurrent flow CO2 absorber, for bringing the flue gas into contact with the CO2 absorbent in a cocurrent flow so as to remove CO2 from flue gas and a countercurrent CO2-absorbing unit provided in a CO2 absorber, for bringing the flue gas into contact with the CO2 absorbent in a countercurrent flow so as to remove CO2 from flue gas.

    摘要翻译： CO 2回收装置包括：冷却塔，其包括用于使含有CO 2的烟道气与水接触以冷却烟道气的冷却单元; 用于使烟道气与CO 2吸收剂（贫溶液）接触以便从烟道气中除去CO 2的CO 2吸收单元; 以及再生器，其包括用于从富溶液中释放CO 2以便再生CO 2吸收剂的吸收剂再生单元。 二氧化碳吸收单元包括：并流CO2吸收单元，其设置在并流CO2吸收器中，用于使烟道气与CO 2吸收剂以并流方式接触，以便从烟气中除去CO 2和逆流CO2- 提供在CO 2吸收器中的吸收单元，用于使烟气以逆流流动与CO 2吸收剂接触，以便从烟道气中除去CO 2。

    Transmission system, transmission device, packet loss ratio measurement method, and packet loss ratio measurement program
    8.
    发明授权
    Transmission system, transmission device, packet loss ratio measurement method, and packet loss ratio measurement program 有权
    传输系统，传输设备，丢包率测量方法和丢包率测量程序

    公开(公告)号：US09264332B2

    公开(公告)日：2016-02-16

    申请号：US14129075

    申请日：2012-06-12

    申请人： Akira Sakurai ,  Hiroshi Tanaka ,  Masaki Umayabashi

    发明人： Akira Sakurai ,  Hiroshi Tanaka ,  Masaki Umayabashi

    IPC分类号： G01R31/08 ,  G06F11/00 ,  G08C15/00 ,  H04L12/26

    CPC分类号： H04L43/0829 ,  H04L43/0835 ,  H04L43/0841 ,  H04L43/0852 ,  H04L43/106

    摘要： In a transmission system capable of measuring packet loss ratio between arbitrary devices upon a transmission path without increasing bandwidth of an OAM frame band, a plurality of transmission devices which have been disposed upon a transmission path are provided with a frame analysis unit which receives data frames so as to analyze the type of the data frames, a count processing unit which stores the number of received frames included in the data frames into storage module provided beforehand, an output line end portion which outputs the data frames, and an OAM processing unit which calculates the packet loss ratio in the transmission path using the number of received frames. The frame analysis unit has a function which, if the data frames are OAM frames, copies the data frames and the OAM processing unit has a function which calculates the packet loss ratio using the copied OAM frames.

    摘要翻译： 在能够测量传输路径上的任意设备之间的分组丢失率而不增加OAM帧频带宽的传输系统中，设置在传输路径上的多个传输设备设置有帧分析单元，其接收数据帧 为了分析数据帧的类型，将数据帧中包含的接收帧的数量存储在预先提供的存储模块中的计数处理单元，输出数据帧的输出线路端部分和OAM处理单元， 使用接收帧的数量来计算传输路径中的丢包率。 帧分析单元具有这样的功能：如果数据帧是OAM帧，则复制数据帧，并且OAM处理单元具有使用复制的OAM帧来计算分组丢失率的功能。

    Substrate processing apparatus and substrate processing method
    9.
    发明授权
    Substrate processing apparatus and substrate processing method 有权
    基板加工装置及基板处理方法

    公开(公告)号：US09070549B2

    公开(公告)日：2015-06-30

    申请号：US12680799

    申请日：2008-09-22

    申请人： Hiroshi Tanaka ,  Toshiyuki Shiokawa ,  Takao Inada

    发明人： Hiroshi Tanaka ,  Toshiyuki Shiokawa ,  Takao Inada

    IPC分类号： B08B5/02 ,  H01L21/02 ,  H01L21/67

    CPC分类号： H01L21/02052 ,  H01L21/67028

    摘要： A drying gas is supplied into a drying chamber in a substantially horizontal direction, an obliquely downward direction descendent from the substantially horizontal direction, or a vertically downward direction under a state where a wafer is immersed in a cleaning liquid in a cleaning tank. The wafer is moved from the cleaning tank into the drying chamber, with the drying gas being supplied into the drying chamber. At this time, the supply of the drying gas into the drying chamber is stopped, under a condition where a part of the wafer is immersed in the cleaning liquid stored in the cleaning tank. After the movement of the wafer into the drying chamber has been finished, a drying gas is supplied into the drying chamber in an obliquely upward direction ascendant from the substantially horizontal direction or a vertically upward direction.

    摘要翻译： 在将晶片浸入清洗槽中的清洗液体的状态下，将干燥气体从大致水平方向或垂直向下方向向大致水平方向，倾斜向下方向供给到干燥室。 将晶片从清洁槽移动到干燥室中，其中干燥气体被供应到干燥室中。 此时，在将晶片的一部分浸渍在存储在清洗槽中的清洗液中的状态下，将干燥气体供给到干燥室内停止。 在将晶片移动到干燥室中之后，干燥气体从大致水平方向或垂直向上方向上升的斜上方向供给干燥室。