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29 条记录 (耗时 0.021 秒)

    Method for fine patterning
    1.
    发明授权
    Method for fine patterning 失效
    精细图案化方法

    公开(公告)号：US5086013A

    公开(公告)日：1992-02-04

    申请号：US388595

    申请日：1989-08-02

    申请人： Ryu Shimizu ,  Shun-ichi Kobayashi

    发明人： Ryu Shimizu ,  Shun-ichi Kobayashi

    IPC分类号： G03F7/00 ,  G03F7/20 ,  G03F7/26 ,  H01L21/027 ,  H01L21/28 ,  H01L21/302 ,  H01L21/306 ,  H01L21/3065

    CPC分类号： G03F7/7045 ,  G03F7/2022 ,  G03F7/2065 ,  G03F7/26 ,  H01L21/0272 ,  Y10S438/949 ,  Y10S438/951

    摘要： A lift-off method for fine patterning includes the steps of: applying a photoresist layer to a substrate; implanting ions into predetermined regions in a surface layer of the photoresist layer; irradiating the photoresist layer with ultraviolet from above; developing the photoresist layer to form a resist pattern for lift-off; depositing a desired material with a predetermined thickness from above the resist pattern; and removing the resist pattern, thereby lifting off the material on the resist pattern, whereby a fine pattern of the desired material is left on the substrate.

    摘要翻译： 精细图案化的剥离方法包括以下步骤：将光致抗蚀剂层施加到基底上; 将离子注入到光致抗蚀剂层的表面层中的预定区域中; 从上面用紫外线照射光致抗蚀剂层; 显影光致抗蚀剂层以形成用于剥离的抗蚀剂图案; 从抗蚀剂图案的上方沉积具有预定厚度的所需材料; 并且去除抗蚀剂图案，从而剥离抗蚀剂图案上的材料，由此在基板上留下所需材料的精细图案。

    Solid-state image sensor
    2.
    发明授权
    Solid-state image sensor 有权
    固态图像传感器

    公开(公告)号：US08149051B2

    公开(公告)日：2012-04-03

    申请号：US11340571

    申请日：2006-01-27

    申请人： Yoshinari Ichihashi ,  Ryu Shimizu ,  Kazuhiro Sasada

    发明人： Yoshinari Ichihashi ,  Ryu Shimizu ,  Kazuhiro Sasada

    IPC分类号： H03F1/32

    CPC分类号： H01L31/02162 ,  H01L27/14623 ,  H01L27/14812 ,  H01L27/1485

    摘要： A solid-state image sensor capable of suppressing color mixture while suppressing increase of load capacitances of transfer gates and a short circuit between two adjacent transfer gates is provided. This solid-state image sensor comprises a plurality of transfer gates and a shielding material line blocking light incident from above a prescribed pixel upon another pixel adjacent to the prescribed pixel. The shielding material line has a downward projecting portion on a region corresponding to at least one transfer gate entering an ON-state in photoreception.

    摘要翻译： 提供一种能够抑制混色的同时抑制传输门的负载电容的增加和两个相邻的传输门之间的短路的固态图像传感器。 该固态图像传感器包括多个传输门和屏蔽材料线，该屏蔽材料线阻挡从与规定像素相邻的另一像素上的规定像素上方入射的光。 屏蔽材料线在对应于在光接收中进入导通状态的至少一个传输栅极的区域上具有向下突出部分。

    Image sensor and sensor unit
    4.
    发明授权
    Image sensor and sensor unit 失效
    图像传感器和传感器单元

    公开(公告)号：US08154060B2

    公开(公告)日：2012-04-10

    申请号：US12183129

    申请日：2008-07-31

    申请人： Hayato Nakashima ,  Ryu Shimizu

    发明人： Hayato Nakashima ,  Ryu Shimizu

    IPC分类号： H01L31/062

    CPC分类号： H01L27/14609 ,  H01L27/14603 ,  H01L27/148

    摘要： This image sensor is so formed as to control at least either the potential of a portion of a transfer channel corresponding to a third electrode or the potential of another portion of the transfer channel corresponding to a fourth electrode to be lower than the potentials of portions of the transfer channel corresponding to a first electrode and a second electrode respectively in a signal charge transferring operation and a signal charge increasing operation.

    摘要翻译： 该图像传感器被形成为控制对应于第三电极的传输通道的一部分的电位或对应于第四电极的传输通道的另一部分的电位的电位的至少一个电位低于 分别对应于第一电极和第二电极的传输通道在信号电荷转移操作和信号电荷增加操作中。

    Image sensor and sensor unit
    5.
    发明授权
    Image sensor and sensor unit 有权
    图像传感器和传感器单元

    公开(公告)号：US07952121B2

    公开(公告)日：2011-05-31

    申请号：US12197515

    申请日：2008-08-25

    申请人： Mamoru Arimoto ,  Hayato Nakashima ,  Kaori Misawa ,  Ryu Shimizu

    发明人： Mamoru Arimoto ,  Hayato Nakashima ,  Kaori Misawa ,  Ryu Shimizu

    IPC分类号： H01L31/00

    CPC分类号： H01L27/14603 ,  H01L27/14609 ,  H01L29/76825

    摘要： An image sensor includes a charge storage portion for storing and transferring signal charges, a first electrode for forming an electric field storing the signal charges in the charge storage portion, a charge increasing portion for increasing the signal charges stored in the charge storage portion and a second electrode for forming another electric field increasing the signal charges in the charge increasing portion, wherein the quantity of the signal charges storable in the charge storage portion is not less than the quantity of the signal charges storable in the charge increasing portion.

    摘要翻译： 图像传感器包括用于存储和传送信号电荷的电荷存储部分，用于形成存储电荷存储部分中的信号电荷的电场的第一电极，用于增加存储在电荷存储部分中的信号电荷的电荷增加部分，以及 第二电极，用于形成增加电荷增加部分中的信号电荷的另一电场，其中可存储在电荷存储部分中的信号电荷的量不小于可存储在电荷增加部分中的信号电荷的量。

    Image sensor comprising multilayer wire
    6.
    发明授权
    Image sensor comprising multilayer wire 失效
    图像传感器包括多层线

    公开(公告)号：US07642499B2

    公开(公告)日：2010-01-05

    申请号：US12023721

    申请日：2008-01-31

    申请人： Ryu Shimizu ,  Masahiro Oda

    发明人： Ryu Shimizu ,  Masahiro Oda

    IPC分类号： H01L27/00 ,  H04N3/14

    CPC分类号： H01L27/14609 ,  H01L27/14603 ,  H01L27/14641 ,  H01L27/14643

    摘要： This image sensor includes a charge increasing portion for increasing the quantity of charges, a first electrode for applying a voltage regulating a region adjacent to the charge increasing portion to a prescribed potential, a second electrode provided adjacently to the first electrode for applying another voltage increasing the quantity of charges in the charge increasing portion, a first wire formed on a prescribed layer for supplying a signal to the first electrode and a second wire formed on a layer different from the prescribed layer for supplying another signal to the second electrode.

    摘要翻译： 该图像传感器包括用于增加电荷量的电荷增加部分，用于将调节与电荷增加部分相邻的区域的电压施加到规定电位的第一电极，与第一电极相邻设置的用于施加另一个电压增加的第二电极 电荷增加部分中的电荷量，形成在用于向第一电极提供信号的规定层上的第一线和形成在与规定层不同的层上的第二线，用于向第二电极提供另一信号。

    IMAGE SENSOR AND METHOD OF MANUFACTURING IMAGE SENSOR
    7.
    发明申请
    IMAGE SENSOR AND METHOD OF MANUFACTURING IMAGE SENSOR 审中-公开
    图像传感器和图像传感器的制造方法

    公开(公告)号：US20090316032A1

    公开(公告)日：2009-12-24

    申请号：US12479325

    申请日：2009-06-05

    申请人： Kaori Misawa ,  Mamoru Arimoto ,  Hayato Nakashima ,  Ryu Shimizu

    发明人： Kaori Misawa ,  Mamoru Arimoto ,  Hayato Nakashima ,  Ryu Shimizu

    IPC分类号： H04N5/335 ,  H01L21/28

    CPC分类号： H01L27/14689 ,  H01L27/14609 ,  H01L27/14612 ,  H01L27/14643 ,  H04N5/374

    摘要： An image sensor includes an increase portion for impact-ionizing and increasing signal charges, a charge increasing electrode for applying a voltage increasing the signal charges to the increase portion and an insulating film provided between the charge increasing electrode and the increase portion, wherein the insulating film includes a first insulating film made of a thermal oxide film and a second insulating film made of an oxide film, formed on the first insulating film.

    摘要翻译： 图像传感器包括用于冲击电离和增加信号电荷的增加部分，用于将增加信号电荷的电压施加到增加部分的电荷增加电极和设置在电荷增加电极与增加部分之间的绝缘膜，其中绝缘 膜包括由第一绝缘膜形成的由热氧化膜制成的第一绝缘膜和由氧化膜制成的第二绝缘膜。

    IMAGE SENSOR
    9.
    发明申请
    IMAGE SENSOR 审中-公开
    图像传感器

    公开(公告)号：US20100270594A1

    公开(公告)日：2010-10-28

    申请号：US12723155

    申请日：2010-03-12

    申请人： Ryu Shimizu ,  Mamoru Arimoto

    发明人： Ryu Shimizu ,  Mamoru Arimoto

    IPC分类号： H01L27/148 ,  H01L27/146

    CPC分类号： H01L27/14609 ,  H01L27/14603 ,  H01L27/14612 ,  H01L27/1464 ,  H01L27/14689

    摘要： An image sensor according to the present invention includes a second conductivity type first impurity region provided on a surface of a first conductivity type semiconductor substrate for constituting a transfer channel for signal charges, a charge increasing portion provided on the first impurity region for increasing the amount of signal charges by impact ionization, an increasing electrode provided on the side of the surface of the semiconductor substrate for applying a voltage to the charge increasing portion, and a second conductivity type second impurity region opposed to the first impurity region through a prescribed region of the semiconductor substrate and suppliable with charges.

    摘要翻译： 根据本发明的图像传感器包括：第二导电型第一杂质区，设置在第一导电型半导体衬底的表面上，用于构成用于信号电荷的转移沟道;电荷增加部，设置在第一杂质区上用于增加量 通过冲击电离形成的信号电荷的增加电极，设置在用于向电荷增加部分施加电压的半导体衬底的表面侧的增加的电极以及与第一杂质区相对的第二导电类型的第二杂质区， 半导体衬底，并可充电。