公开(公告)号：US06388951B1

公开(公告)日：2002-05-14

申请号：US09394890

申请日：1999-09-13

申请人： Ryuichiro Matsumoto ,  Dai Ishikawa ,  Hidekazu Yoshida ,  Michiaki Hamada ,  Chiharu Akaishi

发明人： Ryuichiro Matsumoto ,  Dai Ishikawa ,  Hidekazu Yoshida ,  Michiaki Hamada ,  Chiharu Akaishi

IPC分类号： G04B2302

CPC分类号： G04G11/00

摘要： An audio apparatus comprises an internal clock capable of generating time data; a display section capable of displaying one form of information selected from several predetermined forms of information; and a controller capable of changing the selected information and enabling the selected information to be displayed on the display section, in accordance with the time data generated by the internal clock.

摘要翻译： 音频装置包括能产生时间数据的内部时钟; 显示部，其能够显示从若干预定形式的信息中选择的一种形式的信息; 以及控制器，其能够根据由内部时钟产生的时间数据来改变所选择的信息并使所选择的信息能够显示在显示部分上。

公开(公告)号：US06462263B2

公开(公告)日：2002-10-08

申请号：US09253029

申请日：1999-02-19

申请人： Ryuichiro Matsumoto ,  Dai Ishikawa ,  Hidekazu Yoshida ,  Kazuyuki Uchiyama

发明人： Ryuichiro Matsumoto ,  Dai Ishikawa ,  Hidekazu Yoshida ,  Kazuyuki Uchiyama

IPC分类号： A63H500

CPC分类号： G11B20/10527 ,  G11B27/329 ,  G11B27/34 ,  G11B2020/10592 ,  G11B2220/20

摘要： An information recording medium and an information recording medium reproducing apparatus in which a plurality of kinds of character string information can be sorted and displayed from character information which is recorded in a specific area on the information recording medium. A series of character string information including character strings and a delimiter symbol showing a delimiter of the character strings is recorded in the specific area on the information recording medium. The information recording medium reproducing apparatus has a display unit which can divide the character string information into a plurality of character strings on the basis of the delimiter symbol and can display each character string at each of desired positions.

摘要翻译： 一种信息记录介质和信息记录介质再现装置，其中可以从记录在信息记录介质上的特定区域的字符信息分类并显示多种字符串信息。 一系列包括字符串的字符串信息和表示字符串的定界符的定界符符号被记录在信息记录介质的特定区域中。 信息记录介质再现装置具有可以根据分隔符号将字符串信息划分为多个字符串的显示单元，并且可以在每个期望位置显示每个字符串。

公开(公告)号：US08852463B2

公开(公告)日：2014-10-07

申请号：US12968662

申请日：2010-12-15

申请人： Dai Ishikawa ,  Tomiya Abe

发明人： Dai Ishikawa ,  Tomiya Abe

IPC分类号： H01B1/22 ,  H01B1/02 ,  C23C8/34 ,  B22F1/00

CPC分类号： H01B1/02 ,  B22F1/0062 ,  B22F2998/00 ,  B22F2999/00 ,  C23C8/34 ,  Y10S977/775 ,  Y10S977/777 ,  Y10T428/2982 ,  Y10T428/2993 ,  B22F1/0018 ,  B22F2303/01 ,  B22F2301/255

摘要： A metal fine particle for a conductive metal paste includes a protective agent covering a surface of the metal fine particle. An amount of heat generated per unit mass (g) of the metal fine particle is not less than 500 J at a temperature of an external heat source temperature in a range of 200° C. to 300° C. when being calcined by the external heat source. The protective agent includes at least one selected from the group consisting of dipropylamine, dibutylamine, triethylamine, tripropylamine, tributylamine, butanethiol, pentanethiol, hexanethiol, heptanethiol, octanethiol, nonanethiol, decanethiol, undecanethiol and dodecanethiol. The content of the protective agent is in a range of 0.1 to 20% by mass with respect to the mass of the metal fine particle.

摘要翻译： 用于导电金属浆料的金属微粒包括覆盖金属微粒表面的保护剂。 当外部热源温度在200℃〜300℃的范围内时，金属微粒的单位质量（g）产生的热量不低于500J。 热源。 保护剂包括选自二丙胺，二丁胺，三乙胺，三丙胺，三丁胺，丁硫醇，戊硫醇，己硫醇，庚硫醇，辛硫醇，壬硫醇，癸硫醇，十一烷硫醇和十二烷硫醇中的至少一种。 保护剂的含量相对于金属微粒的质量为0.1〜20质量％。

公开(公告)号：US20060275991A1

公开(公告)日：2006-12-07

申请号：US11505280

申请日：2006-08-17

申请人： Dai Ishikawa ,  Satoshi Sakai ,  Atsushi Hiraiwa

发明人： Dai Ishikawa ,  Satoshi Sakai ,  Atsushi Hiraiwa

IPC分类号： H01L21/336 ,  H01L29/76

CPC分类号： H01L21/28185 ,  H01L21/0214 ,  H01L21/02332 ,  H01L21/28202 ,  H01L21/3143 ,  H01L21/82345 ,  H01L21/823462 ,  H01L21/823842 ,  H01L21/823857 ,  H01L27/1052 ,  H01L27/10814 ,  H01L27/10888 ,  H01L27/10894 ,  H01L29/513 ,  H01L29/518 ,  H01L29/6659 ,  H01L29/7833

摘要： A method of manufacturing a semiconductor integrated circuit device comprising forming a silicon oxide film as thin as 5 nm or less on the surfaces of p type wells and n type wells by wet oxidizing a substrate, heating the substrate in an atmosphere containing about 5% of an NO gas to introduce nitrogen into the silicon oxide film so as to form a silicon oxynitride film, exposing the substrate to a nitrogen plasma atmosphere to further introduce nitrogen into the silicon oxynitride film in order to form a silicon oxynitride gate insulating film having a first peak concentration near the interface with the substrate and a second peak concentration near the surface thereof. Thereby, the concentration of nitrogen in the gate insulating film is increased without raising the concentration of nitrogen near the interface between the substrate and the gate insulating film to a higher level than required.

公开(公告)号：US20050020018A1

公开(公告)日：2005-01-27

申请号：US10917294

申请日：2004-08-13

申请人： Dai Ishikawa ,  Satoshi Sakai ,  Atsushi Hiraiwa

发明人： Dai Ishikawa ,  Satoshi Sakai ,  Atsushi Hiraiwa

IPC分类号： H01L27/04 ,  H01L21/28 ,  H01L21/314 ,  H01L21/822 ,  H01L21/8234 ,  H01L21/8238 ,  H01L21/8242 ,  H01L27/092 ,  H01L27/10 ,  H01L27/108 ,  H01L29/51 ,  H01L29/78 ,  H01L21/4763 ,  H01L21/336 ,  H01L21/31 ,  H01L21/3205 ,  H01L21/469

CPC分类号： H01L21/28185 ,  H01L21/0214 ,  H01L21/02332 ,  H01L21/28202 ,  H01L21/3143 ,  H01L21/82345 ,  H01L21/823462 ,  H01L21/823842 ,  H01L21/823857 ,  H01L27/1052 ,  H01L27/10814 ,  H01L27/10888 ,  H01L27/10894 ,  H01L29/513 ,  H01L29/518 ,  H01L29/6659 ,  H01L29/7833

摘要： A method of manufacturing a semiconductor integrated circuit device comprising forming a silicon oxide film as thin as 5 nm or less on the surfaces of p type wells and n type wells by wet oxidizing a substrate, heating the substrate in an atmosphere containing about 5% of an NO gas to introduce nitrogen into the silicon oxide film so as to form a silicon oxynitride film, exposing the substrate to a nitrogen plasma atmosphere to further introduce nitrogen into the silicon oxynitride film in order to form a silicon oxynitride gate insulating film having a first peak concentration near the interface with the substrate and a second peak concentration near the surface thereof. Thereby, the concentration of nitrogen in the gate insulating film is increased without raising the concentration of nitrogen near the interface between the substrate and the gate insulating film to a higher level than required.

摘要翻译： 一种制造半导体集成电路器件的方法，包括在p型阱和n型阱的表面上通过湿式氧化衬底形成薄至5nm或更小的氧化硅膜，在含有约5％ 用于将氮气引入到氧化硅膜中以形成氧氮化硅膜的NO气体，将衬底暴露于氮等离子体气氛中，以进一步将氮气引入氮氧化硅膜中，以形成具有第一个氮氧化物的氮氧化硅栅极绝缘膜 与基板的界面附近的峰值浓度和其表面附近的第二峰值浓度。 由此，不会使衬底与栅极绝缘膜的界面附近的氮浓度提高到高于所需的水平，所以栅极绝缘膜的氮浓度增加。

公开(公告)号：US09309119B2

公开(公告)日：2016-04-12

申请号：US13069825

申请日：2011-03-23

申请人： Yamato Hayashi ,  Yoshihiro Sekiguchi ,  Hirotsugu Takizawa ,  Dai Ishikawa ,  Tomiya Abe

发明人： Yamato Hayashi ,  Yoshihiro Sekiguchi ,  Hirotsugu Takizawa ,  Dai Ishikawa ,  Tomiya Abe

IPC分类号： H01B1/02 ,  B22F9/18 ,  B22F9/04 ,  B22F1/00 ,  C01B13/14 ,  C01B13/32 ,  B82Y30/00 ,  C01G3/02 ,  H01B1/22

CPC分类号： C01B13/322 ,  B22F1/0014 ,  B22F9/04 ,  B22F9/18 ,  B82Y30/00 ,  C01G3/02 ,  C01P2002/72 ,  C01P2004/03 ,  C01P2004/04 ,  C01P2004/51 ,  C01P2004/64 ,  H01B1/026 ,  H01B1/22

摘要： There is provided a producing method of metal fine particles or metal oxide fine particles for producing metal fine particles or metal oxide fine particles by atomizing raw materials by performing processes including an oxidizing process and a reducing process to the raw materials composed of metal or a metal compound.

摘要翻译： 提供了通过对由金属或金属构成的原料进行包括氧化处理和还原工序的工序，通过使原料雾化来制造金属微粒或金属氧化物微粒的金属微粒或金属氧化物微粒的制造方法 复合。

公开(公告)号：US08163999B2

公开(公告)日：2012-04-24

申请号：US12427323

申请日：2009-04-21

申请人： Tomiya Abe ,  Yuki Honda ,  Dai Ishikawa

发明人： Tomiya Abe ,  Yuki Honda ,  Dai Ishikawa

IPC分类号： H01B7/00

CPC分类号： H02K3/30 ,  H01B3/306 ,  H02K3/40

摘要： An insulation-coated wire has a conductor, and a semiconductive layer provided at an outer periphery of the conductor. The semiconductive layer has a resin coating including metal fine particles dispersed in a base resin, in which an average particle diameter of the metal fine particles is not greater than 1 μm.

摘要翻译： 绝缘涂覆的导线具有导体和设置在导体外周的半导体层。 半导电层具有包含分散在基体树脂中的金属微粒的树脂涂层，其中金属微粒的平均粒径不大于1μm。

公开(公告)号：US07662696B2

公开(公告)日：2010-02-16

申请号：US11690521

申请日：2007-03-23

申请人： Atsushi Hiraiwa ,  Satoshi Sakai ,  Dai Ishikawa ,  Yoshihiro Ikeda

发明人： Atsushi Hiraiwa ,  Satoshi Sakai ,  Dai Ishikawa ,  Yoshihiro Ikeda

IPC分类号： H01L21/31 ,  H01L21/469

CPC分类号： H01L21/28185 ,  H01L21/28194 ,  H01L21/28273 ,  H01L21/3105 ,  H01L21/823857 ,  H01L27/105 ,  H01L27/11521 ,  H01L27/11526 ,  H01L29/513 ,  H01L29/518 ,  H01L2924/0002 ,  H01L2924/00

摘要： According to the present invention, an oxide film with the film quality almost equivalent to that of the thermal oxide can be formed by the low-temperature treatment. After removing an insulator on the active region of the substrate which constitutes a semiconductor wafer, an insulator made of, for example, silicon oxide is deposited on the main surface of the semiconductor wafer by the low pressure CVD method. This insulator is a film to form a gate insulator of MISFET in a later step. Subsequently, a plasma treatment is performed in an atmosphere containing oxygen (oxygen plasma treatment) to the insulator in the manner as schematically shown by the arrows. By so doing, the film quality of the insulator formed by the CVD method can be improved to the extent almost equivalent to that of the insulator formed of the thermal oxide.

摘要翻译： 根据本发明，可以通过低温处理形成膜质量几乎等于热氧化物的氧化膜。 在构成半导体晶片的基板的有源区域上去除绝缘体之后，通过低压CVD法在半导体晶片的主表面上沉积由例如氧化硅制成的绝缘体。 该绝缘体是在后续步骤中形成MISFET的栅极绝缘体的膜。 随后，按照箭头示意性地示出的方式，在含有氧的气氛（氧等离子体处理）中对绝缘体进行等离子体处理。 通过这样做，通过CVD方法形成的绝缘体的膜质量可以提高到与由热氧化物形成的绝缘体几乎相同的程度。

公开(公告)号：US20070190744A1

公开(公告)日：2007-08-16

申请号：US11690521

申请日：2007-03-23

申请人： Atsushi Hiraiwa ,  Satoshi Sakai ,  Dai Ishikawa ,  Yoshihiro Ikeda

发明人： Atsushi Hiraiwa ,  Satoshi Sakai ,  Dai Ishikawa ,  Yoshihiro Ikeda

IPC分类号： H01L21/76

CPC分类号： H01L21/28185 ,  H01L21/28194 ,  H01L21/28273 ,  H01L21/3105 ,  H01L21/823857 ,  H01L27/105 ,  H01L27/11521 ,  H01L27/11526 ,  H01L29/513 ,  H01L29/518 ,  H01L2924/0002 ,  H01L2924/00

摘要： According to the present invention, an oxide film with the film quality almost equivalent to that of the thermal oxide can be formed by the low-temperature treatment. After removing an insulator on the active region of the substrate which constitutes a semiconductor wafer, an insulator made of, for example, silicon oxide is deposited on the main surface of the semiconductor wafer by the low pressure CVD method. This insulator is a film to form a gate insulator of MISFET in a later step. Subsequently, a plasma treatment is performed in an atmosphere containing oxygen (oxygen plasma treatment) to the insulator in the manner as schematically shown by the arrows. By so doing, the film quality of the insulator formed by the CVD method can be improved to the extent almost equivalent to that of the insulator formed of the thermal oxide.

摘要翻译： 根据本发明，可以通过低温处理形成膜质量几乎等于热氧化物的氧化膜。 在构成半导体晶片的基板的有源区域上去除绝缘体之后，通过低压CVD法在半导体晶片的主表面上沉积由例如氧化硅制成的绝缘体。 该绝缘体是在后续步骤中形成MISFET的栅极绝缘体的膜。 随后，按照箭头示意性地示出的方式，在含有氧的气氛（氧等离子体处理）中对绝缘体进行等离子体处理。 通过这样做，通过CVD方法形成的绝缘体的膜质量可以提高到与由热氧化物形成的绝缘体几乎相同的程度。

公开(公告)号：US08664627B1

公开(公告)日：2014-03-04

申请号：US13570067

申请日：2012-08-08

申请人： Dai Ishikawa ,  Kiyohiro Matsushita

发明人： Dai Ishikawa ,  Kiyohiro Matsushita

IPC分类号： G21K5/04

CPC分类号： C23C16/45502 ,  C23C16/482 ,  Y10T137/0318

摘要： A method for supplying gas over a substrate in a reaction chamber wherein a substrate is placed on a pedestal, includes: supplying a first gas from a first side of the reaction chamber to a second side of the reaction chamber opposite to the first side; and adding a second gas to the first gas from sides of the reaction chamber other than the first side of the reaction chamber so that the second gas travels from sides of the substrate other than the first side in a downstream direction.

摘要翻译： 一种用于在反应室中的基板上提供气体的方法，其中将基板放置在基座上，包括：将第一气体从所述反应室的第一侧供应到所述反应室的与所述第一侧相对的第二侧; 以及从所述反应室的除了所述反应室的第一侧之外的侧面向所述第一气体添加第二气体，使得所述第二气体沿着下游方向从所述基板的除了所述第一侧的侧面行进。