公开(公告)号：US09257605B2

公开(公告)日：2016-02-09

申请号：US14790047

申请日：2015-07-02

申请人： SAMSUNG ELECTRONICS CO., LTD.

发明人： Yeon Woo Seo ,  Jung-Sub Kim ,  Young Jin Choi ,  Denis Sannikov ,  Han Kyu Seong ,  Dae Myung Chun ,  Jae Hyeok Heo

IPC分类号： H01L33/08 ,  H01L33/24 ,  H01L33/32 ,  H01L33/38 ,  H01L33/14 ,  H01L33/20

CPC分类号： H01L33/24 ,  F21K9/232 ,  F21S41/147 ,  F21S45/43 ,  F21S45/47 ,  F21Y2115/10 ,  H01L33/007 ,  H01L33/0075 ,  H01L33/0079 ,  H01L33/08 ,  H01L33/145 ,  H01L33/18 ,  H01L33/20 ,  H01L33/32 ,  H01L33/38 ,  H01L33/385 ,  H01L33/387 ,  H01L33/44 ,  H01L33/62 ,  H01L2224/32225 ,  H01L2224/32245 ,  H01L2224/48091 ,  H01L2224/48227 ,  H01L2224/48247 ,  H01L2224/73265 ,  H01L2933/0016 ,  H01L2924/00014 ,  H01L2924/00

摘要： A method of manufacturing a light emitting device having a plurality of nano-light emitting structures is provided. The method comprises depositing a first conductivity-type semiconductor material on a substrate to form a base layer. A mask having a plurality of openings is formed on the base layer. The first conductivity-type nitride semiconductor material is deposited in the openings of the mask to form a plurality of nanocores having a main portion bounded by the mask and an exposed tip portion. A current blocking layer is deposited on the tip portion of the nanocores. A portion of the mask is removed to expose the main portion of the nanocore. An active material layer is deposited on the plurality of nanocores. A second conductivity-type nitride semiconductor layer is deposited on the active material layer.

公开(公告)号：US09640717B2

公开(公告)日：2017-05-02

申请号：US14814732

申请日：2015-07-31

申请人： Samsung Electronics Co., Ltd.

发明人： Denis Sannikov

IPC分类号： H01L33/06 ,  G09G3/32 ,  H01L33/32 ,  H01L33/50

CPC分类号： H01L33/06 ,  G09G3/32 ,  G09G2300/0426 ,  H01L33/325 ,  H01L33/50 ,  H01L2224/48463 ,  H01L2224/49107

摘要： An ultraviolet light emitting apparatus may include a chamber, at least one semiconductor light emitting device, an electron beam irradiation source, and first and second connection electrodes configured to apply a voltage from an external power source to the at least one semiconductor light emitting device. The chamber may define an internal space and include a light emission window. The at least one semiconductor light emitting device may be on the light emission window and include a first conductivity type nitride semiconductor layer, an undoped nitride semiconductor layer, and an active layer between the first conductivity type nitride semiconductor layer and the undoped nitride semiconductor layer. The electron beam irradiation source may be in the internal space of the chamber and configured to irradiate an electron beam onto the undoped nitride semiconductor layer.