-
公开(公告)号：US09525100B2
公开(公告)日：2016-12-20
申请号：US15042283
申请日：2016-02-12
Applicant: SAMSUNG ELECTRONICS CO., LTD.
Inventor： Geon-Wook Yoo , Nam-goo Cha , Dong-kuk Lee , Dong-hoon Lee
CPC classification number: H01L33/08 , H01L27/156 , H01L33/24 , H01L33/387
Abstract: Provided is a nano-structured light-emitting device including: a first type semiconductor layer; a plurality of nanostructures which are formed on the first type semiconductor layer and include nanocores, and active layers and second type semiconductor layers that enclose surfaces of the nanocores; an electrode layer which encloses and covers the plurality of nanostructures; and a plurality of resistant layers which are formed on the electrode layer and respectively correspond to the plurality of nanostructures.
Abstract translation: 本发明提供一种纳米结构发光器件，其包括：第一类型半导体层; 形成在第一类型半导体层上并包括纳米孔的多个纳米结构体，以及包围纳米孔表面的活性层和第二类型半导体层; 包围并覆盖多个纳米结构的电极层; 以及形成在电极层上并分别对应于多个纳米结构的多个电阻层。
-
2.发明授权公开(公告)号：US09525102B2
公开(公告)日：2016-12-20
申请号：US14764349
申请日：2014-01-28
Applicant: SAMSUNG ELECTRONICS CO., LTD.
Inventor： Nam-Goo Cha , Geon-Wook Yoo , Han-Kyu Seong
CPC classification number: H01L33/20 , H01L33/005 , H01L33/08 , H01L33/18 , H01L33/24
Abstract: There is provided a method of manufacturing a nanostructure semiconductor light emitting device including providing a base layer formed of a first conductivity-type semiconductor, forming a mask including an etch stop layer on the base layer, forming a plurality of openings with regions of the base layer exposed therethrough, in the mask; forming a plurality of nanocores by growth of the first conductivity-type semiconductor on the exposed regions of the base layer to fill the plurality of openings, partially removing the mask using the etch stop layer to expose side portions of the plurality of nanocores, and sequentially growth of an active layer and a second conductivity-type semiconductor layer on surfaces of the plurality of nanocores.
Abstract translation: 提供一种制造纳米结构半导体发光器件的方法，包括提供由第一导电型半导体形成的基底层，在基底层上形成包括蚀刻停止层的掩模，形成多个具有基底区域的开口 在面罩中暴露于其中的层; 通过在基底层的暴露区域上生长第一导电类型半导体以填充多个开口而形成多个纳米孔，使用蚀刻停止层部分地去除掩模以暴露多个纳米孔的侧部，并依次 在多个纳米孔的表面上生长活性层和第二导电型半导体层。
-
公开(公告)号：US09159882B2
公开(公告)日：2015-10-13
申请号：US14501232
申请日：2014-09-30
Applicant: Samsung Electronics Co., Ltd.
Inventor： Kyung-Wook Hwang , Ju-Bin Seo , Ji-Hye Yeon , Geon-Wook Yoo , Dong-hoon Lee
CPC classification number: H01L33/46 , F21K9/232 , F21Y2115/10 , H01L33/08 , H01L33/24 , H01L33/405 , H01L33/42 , H01L33/44 , H01L33/54 , H01L2224/16225
Abstract: A semiconductor light-emitting device includes a first conductive type semiconductor layer having a main surface, a plurality of vertical type light-emitting structures protruding upward from the first conductive type semiconductor layer; a transparent electrode layer covering the plurality of vertical type light-emitting structures; and an insulation-filling layer disposed on the transparent electrode layer. The insulation-filling layer extends parallel to the first conductive type semiconductor layer so as to cover the plurality of vertical type light-emitting structures. A selected one of the first conductive type semiconductor layer and the insulation-filling layer, which is disposed on a light transmission path through which light generated from the plurality of vertical type light-emitting structures is radiated externally, has an uneven outer surface. The uneven outer surface is opposite to an inner surface of the selected one, and the inner surface faces the plurality of vertical type light-emitting structures.
Abstract translation: 半导体发光器件包括具有主表面的第一导电类型半导体层，从第一导电类型半导体层向上突出的多个垂直型发光结构; 覆盖多个垂直型发光结构的透明电极层; 以及设置在所述透明电极层上的绝缘填充层。 绝缘填充层平行于第一导电类型半导体层延伸以覆盖多个垂直型发光结构。 设置在从多个垂直型发光结构产生的光从外部照射的光传输路径上的第一导电类型半导体层和绝缘填充层中选择的一个具有不平坦的外表面。 不平坦的外表面与所选择的外表面的内表面相反，并且内表面面向多个垂直型发光结构。
-
Patent Agency Ranking
公开(公告)号：US09853185B2
公开(公告)日：2017-12-26
申请号：US15297647
申请日：2016-10-19
Applicant: SAMSUNG ELECTRONICS CO., LTD.
Inventor： Nam-Goo Cha , Dong-Ho Kim , Geon-Wook Yoo
IPC: H01L33/00 , H01L33/06 , H01L33/08 , H01L33/18 , H01L33/24 , H01L33/36 , H01L33/44 , H01L33/40 , H01L33/38
CPC classification number: H01L33/06 , H01L33/005 , H01L33/007 , H01L33/0075 , H01L33/0095 , H01L33/08 , H01L33/18 , H01L33/24 , H01L33/36 , H01L33/382 , H01L33/387 , H01L33/40 , H01L33/44 , H01L2933/0016 , H01L2933/0025
Abstract: There is provided a method for manufacturing a nanostructure semiconductor light emitting device, including: forming a mask having a plurality of openings on a base layer; growing a first conductivity-type semiconductor layer on exposed regions of the base layer such that the plurality of openings are filled, to form a plurality of nanocores; partially removing the mask such that side surfaces of the plurality of nanocores are exposed; heat-treating the plurality of nanocores after partially removing the mask; sequentially growing an active layer and a second conductivity-type semiconductor layer on surfaces of the plurality of nanocores to form a plurality of light emitting nanostructures, after the heat treatment; and planarizing upper parts of the plurality of light emitting nanostructures such that upper surfaces of the nanocores are exposed.
-
5.发明授权公开(公告)号：US09508893B2
公开(公告)日：2016-11-29
申请号：US14764484
申请日：2014-01-28
Applicant: SAMSUNG ELECTRONICS CO., LTD.
Inventor： Nam-Goo Cha , Dong-Ho Kim , Geon-Wook Yoo
CPC classification number: H01L33/06 , H01L33/005 , H01L33/007 , H01L33/0075 , H01L33/0095 , H01L33/08 , H01L33/18 , H01L33/24 , H01L33/36 , H01L33/382 , H01L33/387 , H01L33/40 , H01L33/44 , H01L2933/0016 , H01L2933/0025
Abstract: There is provided a method for manufacturing a nanostructure semiconductor light emitting device, including: forming a mask having a plurality of openings on a base layer; growing a first conductivity-type semiconductor layer on exposed regions of the base layer such that the plurality of openings are filled, to form a plurality of nanocores; partially removing the mask such that side surfaces of the plurality of nanocores are exposed; heat-treating the plurality of nanocores after partially removing the mask; sequentially growing an active layer and a second conductivity-type semiconductor layer on surfaces of the plurality of nanocores to form a plurality of light emitting nanostructures, after the heat treatment; and planarizing upper parts of the plurality of light emitting nanostructures such that upper surfaces of the nanocores are exposed.
Abstract translation: 提供了一种制造纳米结构半导体发光器件的方法，包括：在基底层上形成具有多个开口的掩模; 在所述基底层的暴露区域上生长第一导电型半导体层，使得所述多个开口被填充，以形成多个纳米孔; 部分地去除所述掩模，使得所述多个纳米孔的侧表面暴露; 在部分去除掩模之后对多个纳米孔进行热处理; 在所述多个纳米孔的表面上依次生长有源层和第二导电型半导体层，以在所述热处理之后形成多个发光纳米结构; 并且平坦化多个发光纳米结构的上部，使得纳米孔的上表面被暴露。
-
公开(公告)号：US08847199B2
公开(公告)日：2014-09-30
申请号：US13672019
申请日：2012-11-08
Applicant: Samsung Electronics Co., Ltd.
Inventor： Nam-Go Cha , Geon-Wook Yoo , Han-Kyu Seong , Sam-Mook Kang , Hun-Jae Chung
CPC classification number: H01L33/24 , B82Y20/00 , B82Y40/00 , H01L33/08 , H01L33/18 , H01L33/387 , Y10S977/932
Abstract: A nanorod light emitting device includes at least one nitride semiconductor layer, a mask layer, multiple light emitting nanorods, nanoclusters, a filling layer disposed on the nanoclusters, a first electrode and connection parts. The mask layer is disposed on the nitride semiconductor layer and has through holes. The light emitting nanorods are disposed in and extend vertically from the through holes. The nanoclusters are spaced apart from each other. Each of the nanoclusters has a conductor and covers a group of light emitting nanorods, among the multiple light emitting nanorods, with the conductor. The first electrode is disposed on the filling layer and has a grid pattern. The connection parts connect the conductor and the first electrode.
Abstract translation: 纳米棒发光器件包括至少一个氮化物半导体层，掩模层，多个发光纳米棒，纳米团簇，设置在纳米团簇上的填充层，第一电极和连接部分。 掩模层设置在氮化物半导体层上并具有通孔。 发光纳米棒设置在通孔中并从通孔垂直延伸。 纳米团簇彼此间隔开。 每个纳米团簇具有导体并且覆盖在多个发光纳米棒中的一组发光纳米棒与导体。 第一电极设置在填充层上并具有网格图案。 连接部分连接导体和第一电极。
-
7.发明授权Light-emitting device having dielectric reflector and method of manufacturing the same 有权具有介质反射体的发光装置及其制造方法公开(公告)号：US09087971B2
公开(公告)日：2015-07-21
申请号：US14473709
申请日：2014-08-29
Applicant: SAMSUNG ELECTRONICS CO., LTD.
Inventor： Dong-Hoon Lee , Geon-Wook Yoo , Nam-Goo Cha , Kyung-Wook Hwang
CPC classification number: H01L33/60 , B82Y20/00 , H01L27/15 , H01L33/08 , H01L33/14 , H01L33/24 , H01L33/46 , Y10S977/762 , Y10S977/949 , Y10S977/95
Abstract: A light-emitting device includes a first conductive semiconductor layer formed on a substrate, a mask layer formed on the first conductive semiconductor layer and having a plurality of holes, a plurality of vertical light-emitting structures vertically grown on the first conductive semiconductor layer through the plurality of holes, a current diffusion layer surrounding the plurality of vertical light-emitting structures on the first conductive semiconductor layer, and a dielectric reflector filling a space between the plurality of vertical light-emitting structures on the current diffusion layer.
Abstract translation: 发光装置包括形成在基板上的第一导电半导体层，形成在第一导电半导体层上并具有多个孔的掩模层，在第一导电半导体层上垂直生长的多个垂直发光结构，通过 所述多个孔，围绕所述第一导电半导体层上的所述多个垂直发光结构的电流扩散层，以及填充所述电流扩散层上的所述多个垂直发光结构之间的空间的电介质反射器。
-
公开(公告)号：US08853671B2
公开(公告)日：2014-10-07
申请号：US13657357
申请日：2012-10-22
Applicant: Samsung Electronics Co., Ltd.
Inventor： Nam-Goo Cha , Geon-Wook Yoo , Han-Kyu Seong , Sam-Mook Kang , Hun-Jae Chung
CPC classification number: H01L33/18 , H01L33/007 , H01L33/08 , H01L33/24 , H01L33/385 , H01L33/44
Abstract: A nanorod light emitting device and a method of manufacturing the same. The nanorod light emitting device may include at least one nitride semiconductor layer, light emitting nanorods formed on the nitride semiconductor layer and spaced apart from each other, and a first filling layer, a conductive layer, and a second filling layer formed in spaces between the light emitting nanorods.
Abstract translation: 纳米棒发光器件及其制造方法。 纳米棒发光器件可以包括至少一个氮化物半导体层，形成在氮化物半导体层上并彼此间隔开的发光纳米棒，以及第一填充层，导电层和形成在第二填充层之间的第二填充层 发光纳米棒。
-
-
-
-
-
-
-
Search Results
8
records
(took 0.017 seconds)
