公开(公告)号：US20170162401A1

公开(公告)日：2017-06-08

申请号：US15269036

申请日：2016-09-19

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： SUNG-HO KANG ,  KI-CHUL KIM ,  JAE-HYUN LEE ,  PYUNG MOON ,  HAN-KI LEE ,  UN-KI KIM

IPC: H01L21/324 ,  C23C16/50 ,  H01L21/30 ,  H01L21/687 ,  H01L21/67 ,  H01J37/32 ,  C23C16/458

CPC classification number: H01L21/324 ,  H01J37/32082 ,  H01J37/32633 ,  H01J37/32715 ,  H01J37/32834 ,  H01L21/3003 ,  H01L21/67115 ,  H01L21/6831

Abstract: A plasma processing apparatus includes a susceptor, a chamber housing that accommodates the susceptor and encloses a reaction space, and an annular shaped baffle plate that annularly surrounds the susceptor. The baffle plate includes a first layer that includes a conductive material and a second layer that includes a non-conductive material, and the second layer is closer to the reaction space than the first layer.

公开(公告)号：US20150198944A1

公开(公告)日：2015-07-16

申请号：US14473554

申请日：2014-08-29

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： KYOUNGHOON HAN ,  BYUNGBOK KANG ,  NAMJUN KANG ,  TAE-HWA KIM ,  JUNGHYUN CHO ,  JAE-HYUN LEE

IPC: G05B19/418

CPC classification number: H01J37/32394 ,  G05B23/0283 ,  G05B2219/45031 ,  Y02P90/14 ,  Y02P90/18 ,  Y02P90/86

Abstract: Provided are a method and a system for managing semiconductor manufacturing equipment. The method may be performed using an equipment computer and may include ordering to perform a preventive maintenance to a chamber and parts in the chamber, monitoring a result of the preventive maintenance to the chamber and the parts, and performing a manufacturing process using plasma reaction in the chamber, if the result of the preventive maintenance is normal. The monitoring the result of the preventive maintenance may include a pre-screening method monitoring the result of the preventive maintenance using electric reflection coefficients obtained from the chamber and the parts without using the plasma reaction.

Abstract translation: 提供了一种用于管理半导体制造设备的方法和系统。 该方法可以使用设备计算机执行，并且可以包括对腔室和腔室中的部件进行预防性维护的顺序，监测对腔室和部件的预防性维护的结果，以及使用等离子体反应进行制造过程 如果预防性维护的结果是正常的话。 监视预防性维护的结果可以包括使用从腔室和部件获得的电反射系数来监视预防性维护的结果的预筛选方法，而不使用等离子体反应。

公开(公告)号：US20180053661A1

公开(公告)日：2018-02-22

申请号：US15443378

申请日：2017-02-27

Applicant: SAMSUNG ELECTRONICS CO. LTD.

Inventor： MIN-JOON PARK ,  TAE-HWA KIM ,  JAE-HYUN LEE ,  SANG-DONG KWON

IPC: H01L21/3065 ,  H01L21/67 ,  H01L21/311 ,  H01J37/32

CPC classification number: H01L21/3065 ,  H01J37/32091 ,  H01J37/321 ,  H01J37/32146 ,  H01J37/32165 ,  H01J37/32715 ,  H01J2237/334 ,  H01J2237/3347 ,  H01L21/31116 ,  H01L21/67069

Abstract: Disclosed are a plasma etching apparatus and a method of manufacturing semiconductor devices using the same. The plasma etching apparatus includes a process chamber. A source supplier is positioned at an upper portion of the process chamber. The source supplier is configured to supply source gases for an etching process. A substrate holder is positioned at a lower portion of the process chamber opposite to the source supplier. The substrate holder is configured to support a substrate. A first power source is configured to apply a high frequency power to capacitively couple the source gases into a capacitively coupled plasma (CCP) in the process chamber. A second power source is configured to apply a low frequency pulse power at a low duty ratio of less than or equal to about 0.5:1. The low frequency pulse power is configured to guide the CCP toward the substrate supported by the substrate holder.