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    Semiconductor light emitting device
    1.
    发明授权
    Semiconductor light emitting device 有权
    半导体发光器件

    公开(公告)号：US08946751B2

    公开(公告)日：2015-02-03

    申请号：US14015095

    申请日：2013-08-30

    Applicant: Samsung Electronics Co., Ltd.

    Inventor： Jin Bock Lee ,  Ki Seok Kim ,  Je Won Kim ,  Ju-Bin Seo ,  Seong Seok Yang ,  Sang Seok Lee ,  Joon Sub Lee

    IPC: H01L33/00 ,  H01L33/36 ,  H01L33/10 ,  H01L33/60 ,  H01L33/42 ,  H01L33/38 ,  H01L33/40

    CPC classification number: H01L33/36 ,  H01L33/10 ,  H01L33/38 ,  H01L33/405 ,  H01L33/42 ,  H01L33/60

    Abstract: A semiconductor light emitting device includes a first conductivity-type semiconductor layer, an active layer and a second conductivity-type semiconductor layer sequentially stacked on a substrate. A first electrode is disposed on a portion of the first conductivity-type semiconductor layer. A current diffusion layer is disposed on the second conductivity-type semiconductor layer and includes an opening exposing a portion of the second conductivity-type semiconductor layer. A second electrode covers a portion of the current diffusion layer and the exposed portion of the second conductivity-type semiconductor layer, wherein the portion of the current diffusion layer is near the opening.

    Abstract translation: 半导体发光器件包括依次层叠在基板上的第一导电型半导体层，有源层和第二导电型半导体层。 第一电极设置在第一导电型半导体层的一部分上。 电流扩散层设置在第二导电型半导体层上，并且包括露出第二导电型半导体层的一部分的开口。 第二电极覆盖电流扩散层的一部分和第二导电型半导体层的暴露部分，其中电流扩散层的部分靠近开口。

    Semiconductor light emitting device and method for manufacturing the same
    3.
    发明授权
    Semiconductor light emitting device and method for manufacturing the same 有权
    半导体发光器件及其制造方法

    公开(公告)号：US09076928B2

    公开(公告)日：2015-07-07

    申请号：US13906044

    申请日：2013-05-30

    Applicant: SAMSUNG ELECTRONICS CO., LTD.

    Inventor： Seong Seok Yang ,  Ki Seok Kim ,  Je Won Kim ,  Ju Bin Seo ,  Sang Seok Lee ,  Joon Sub Lee ,  Jin Bock Lee

    IPC: H01L33/00 ,  H01L33/36 ,  H01L33/02 ,  H01L27/15

    CPC classification number: H01L33/36 ,  H01L27/15 ,  H01L33/02

    Abstract: A semiconductor light emitting device is provided and includes a protective element including a first lower conductivity-type semiconductor layer and a second lower conductivity-type semiconductor layer. First and second lower electrodes are connected to the first lower conductivity-type semiconductor layer and the second lower conductivity-type semiconductor layer, respectively. A light emitting structure includes a first upper conductivity-type semiconductor layer, an active layer, and a second upper conductivity-type semiconductor layer sequentially formed on the protective element. First and second upper electrodes are connected to the first upper conductivity-type semiconductor layer and the second upper conductivity-type semiconductor layer, respectively.

    Abstract translation: 提供了半导体发光器件，并且包括具有第一下导电型半导体层和第二下导电型半导体层的保护元件。 第一和第二下电极分别连接到第一下导电型半导体层和第二下导电型半导体层。 发光结构包括依次形成在保护元件上的第一上导电型半导体层，有源层和第二上导电型半导体层。 第一上电极和第二上电极分别连接到第一上导电型半导体层和第二上导电型半导体层。

    TEST APPARATUS FOR LIGHT EMITTING DEVICES
    5.
    发明申请
    TEST APPARATUS FOR LIGHT EMITTING DEVICES 审中-公开

    公开(公告)号：US20170234937A1

    公开(公告)日：2017-08-17

    申请号：US15234417

    申请日：2016-08-11

    Applicant: Samsung Electronics Co., Ltd.

    Inventor： Seung Won Park ,  Joon Sub Lee ,  Seung Won Kang

    IPC: G01R31/44 ,  G01J1/44

    CPC classification number: G01R31/44 ,  G01J1/0223 ,  G01J1/42 ,  G01J2001/4252

    Abstract: A testing apparatus includes a plate unit including at least one chip mounting unit on which a light emitting diode (LED) to be tested is mounted. The chip mounting unit has a first region in which the LED is overlaid and a second region surrounding the first region. The first and second electrode pads are disposed in the first region and include respective extension portions extended toward the second region. A probe portion is configured to connect to the extension portions of the first and second electrode pads. A power control unit is configured to selectively apply test power to the LED through the probe portion. A light measuring unit is configured to measure light properties of light emitted by the LED.

    SEMICONDUCTOR LIGHT EMITTING DEVICE
    6.
    发明申请
    SEMICONDUCTOR LIGHT EMITTING DEVICE 有权
    半导体发光器件

    公开(公告)号：US20140070252A1

    公开(公告)日：2014-03-13

    申请号：US14015095

    申请日：2013-08-30

    Applicant: SAMSUNG ELECTRONICS CO., LTD.

    Inventor： JIN BOCK LEE ,  Ki Seok Kim ,  Je Won Kim ,  Ju-Bin Seo ,  Seong-Seok Yang ,  Sang Seok Lee ,  Joon Sub Lee

    IPC: H01L33/36

    CPC classification number: H01L33/36 ,  H01L33/10 ,  H01L33/38 ,  H01L33/405 ,  H01L33/42 ,  H01L33/60

    Abstract: A semiconductor light emitting device includes a first conductivity-type semiconductor layer, an active layer and a second conductivity-type semiconductor layer sequentially stacked on a substrate. A first electrode is disposed on a portion of the first conductivity-type semiconductor layer. A current diffusion layer is disposed on the second conductivity-type semiconductor layer and includes an opening exposing a portion of the second conductivity-type semiconductor layer. A second electrode covers a portion of the current diffusion layer and the exposed portion of the second conductivity-type semiconductor layer, wherein the portion of the current diffusion layer is near the opening.

    Abstract translation: 半导体发光器件包括依次层叠在基板上的第一导电型半导体层，有源层和第二导电型半导体层。 第一电极设置在第一导电型半导体层的一部分上。 电流扩散层设置在第二导电型半导体层上，并且包括露出第二导电型半导体层的一部分的开口。 第二电极覆盖电流扩散层的一部分和第二导电型半导体层的暴露部分，其中电流扩散层的部分靠近开口。

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