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公开(公告)号：US09680050B2
公开(公告)日：2017-06-13
申请号：US14612244
申请日：2015-02-02
Applicant: SAMSUNG ELECTRONICS CO., LTD.
Inventor： Pun Jae Choi , Yu Seung Kim , Jin Bock Lee
CPC classification number: H01L33/0075 , H01L33/0079 , H01L33/08 , H01L33/20 , H01L33/22 , H01L33/38 , H01L33/382 , H01L33/40 , H01L33/405 , H01L33/42 , H01L2224/48091 , H01L2224/48247 , H01L2924/00014 , H01L2933/0016
Abstract: There is provided a semiconductor light emitting device including a conductive substrate, a first electrode layer, an insulating layer, a second electrode layer, a second semiconductor layer, an active layer, and a first semiconductor layer that are sequentially stacked. The contact area between the first electrode layer and the first semiconductor layer is 3% to 13% of the total area of the semiconductor light emitting device, and thus high luminous efficiency is achieved.
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公开(公告)号：US10333023B2
公开(公告)日：2019-06-25
申请号：US15992822
申请日：2018-05-30
Applicant: SAMSUNG ELECTRONICS CO., LTD.
Inventor： Pun Jae Choi , Yu Seung Kim , Jin Bock Lee
Abstract: There is provided a semiconductor light emitting device including a conductive substrate, a first electrode layer, an insulating layer, a second electrode layer, a second semiconductor layer, an active layer, and a first semiconductor layer that are sequentially stacked. The contact area between the first electrode layer and the first semiconductor layer is 3% to 13% of the total area of the semiconductor light emitting device, and thus high luminous efficiency is achieved.
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公开(公告)号：US08946751B2
公开(公告)日：2015-02-03
申请号：US14015095
申请日：2013-08-30
Applicant: Samsung Electronics Co., Ltd.
Inventor： Jin Bock Lee , Ki Seok Kim , Je Won Kim , Ju-Bin Seo , Seong Seok Yang , Sang Seok Lee , Joon Sub Lee
Abstract: A semiconductor light emitting device includes a first conductivity-type semiconductor layer, an active layer and a second conductivity-type semiconductor layer sequentially stacked on a substrate. A first electrode is disposed on a portion of the first conductivity-type semiconductor layer. A current diffusion layer is disposed on the second conductivity-type semiconductor layer and includes an opening exposing a portion of the second conductivity-type semiconductor layer. A second electrode covers a portion of the current diffusion layer and the exposed portion of the second conductivity-type semiconductor layer, wherein the portion of the current diffusion layer is near the opening.
Abstract translation: 半导体发光器件包括依次层叠在基板上的第一导电型半导体层，有源层和第二导电型半导体层。 第一电极设置在第一导电型半导体层的一部分上。 电流扩散层设置在第二导电型半导体层上，并且包括露出第二导电型半导体层的一部分的开口。 第二电极覆盖电流扩散层的一部分和第二导电型半导体层的暴露部分，其中电流扩散层的部分靠近开口。
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公开(公告)号：US09537051B2
公开(公告)日：2017-01-03
申请号：US14838635
申请日：2015-08-28
Applicant: Samsung Electronics Co., Ltd.
Inventor： Nam Goo Cha , Jin Bock Lee , Dong Kuk Lee , Dong Hyun Cho , Min Wook Choi
CPC classification number: H01L33/24 , H01L33/0075 , H01L33/08 , H01L33/38 , H01L2224/48091 , H01L2224/48237 , H01L2224/48247 , H01L2224/48257 , H01L2224/73265 , H01L2924/181 , H01L2933/0016 , H01L2933/0025 , H01L2924/00014 , H01L2924/00012
Abstract: A nanostructure semiconductor light emitting device may include a base layer having first and second regions and formed of a first conductivity-type semiconductor material; a plurality of light emitting nanostructures disposed on the base layer, each of which including a nanocore formed of a first conductivity-type semiconductor material, and an active layer and a second conductivity-type semiconductor layer sequentially disposed on the nanocore; a contact electrode disposed on the light emitting nanostructures to be connected to the second conductivity-type semiconductor layer; a first electrode connected to the base layer; and a second electrode covering a portion of the contact electrode disposed on at least one of light emitting nanostructures disposed in the second region among the plurality of light emitting nanostructures, wherein light emitting nanostructures disposed in the second region and light emitting nanostructures disposed in the first region among the plurality of light emitting nanostructures have different shapes.
Abstract translation: 纳米结构半导体发光器件可以包括具有第一和第二区域并由第一导电型半导体材料形成的基极层; 设置在基底层上的多个发光纳米结构，每个发光纳米结构包括由第一导电型半导体材料形成的纳米孔，以及顺序地设置在纳米孔上的有源层和第二导电型半导体层; 设置在所述发光纳米结构上以与所述第二导电类型半导体层连接的接触电极; 连接到所述基底层的第一电极; 以及覆盖设置在多个发光纳米结构中的第二区域中的发光纳米结构中的至少一个发光纳米结构的接触电极的一部分的第二电极，其中设置在第二区域中的发光纳米结构和设置在第一区域中的发光纳米结构 多个发光纳米结构中的区域具有不同的形状。
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公开(公告)号：US20140131759A1
公开(公告)日：2014-05-15
申请号：US14129524
申请日：2011-07-29
Applicant: SAMSUNG ELECTRONICS CO., LTD.
Inventor： Jae Yoon Kim , Je Won Kim , Jin Bock Lee , Seok Min Hwang , Hae Soo Ha , Su Yeol Lee
IPC: H01L33/38
CPC classification number: H01L33/387 , H01L33/20 , H01L33/382 , H01L2933/0016
Abstract: A semiconductor light emitting device includes an n-type semiconductor layer, an active layer and a p-type semiconductor layer formed in a first region corresponding to a partial region of an upper surface of the n-type semiconductor layer, an n-type electrode formed in a second region different from the first region on the upper surface of the n-type semiconductor layer, and having an n-type pad and first and second n-type fingers, and a p-type electrode formed on the p-type semiconductor layer, and having a p-type pad and a p-type finger, wherein the n-type semiconductor layer, the active layer, and the p-type semiconductor layer form a light emitting structure, and a region in which the n-type and p-type fingers intersect to overlap with each other is formed.
Abstract translation: 半导体发光器件包括形成在对应于n型半导体层的上表面的部分区域的第一区域中的n型半导体层，有源层和p型半导体层，n型电极 形成在与n型半导体层的上表面上的第一区域不同的第二区域中，并且具有n型焊盘和第一和第n型指状物以及形成在p型上的p型电极 半导体层，并且具有p型焊盘和p型指状物，其中所述n型半导体层，所述有源层和所述p型半导体层形成发光结构，以及其中所述n型半导体层， 形成彼此重叠的类型和p型手指。
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Patent Agency Ranking
公开(公告)号：US09105762B2
公开(公告)日：2015-08-11
申请号：US14607851
申请日：2015-01-28
Applicant: SAMSUNG ELECTRONICS CO., LTD.
Inventor： Jae Yoon Kim , Jin Bock Lee , Seok Min Hwang , Su Yeol Lee
CPC classification number: H01L33/005 , H01L33/32 , H01L33/38 , H01L33/405 , H01L33/42 , H01L2933/0016 , H01L2933/0058
Abstract: A semiconductor light emitting device includes: a light emission structure in which a first conductive semiconductor layer, an active layer and a second conductive semiconductor layer are sequentially stacked; a first electrode formed on the first conductive semiconductor layer; an insulating layer formed on the second conductive semiconductor layer and made of a transparent material; a reflection unit formed on the insulating layer and reflecting light emitted from the active layer; a second electrode formed on the reflection unit; and a transparent electrode formed on the second conductive semiconductor layer, the transparent electrode being in contact with the insulating layer and the second electrode.
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公开(公告)号：US08975653B2
公开(公告)日：2015-03-10
申请号：US14080455
申请日：2013-11-14
Applicant: Samsung Electronics Co., Ltd.
Inventor： Pun Jae Choi , Seung Yu Kim , Jin Bock Lee
CPC classification number: H01L33/0075 , H01L33/0079 , H01L33/08 , H01L33/20 , H01L33/22 , H01L33/38 , H01L33/382 , H01L33/40 , H01L33/405 , H01L33/42 , H01L2224/48091 , H01L2224/48247 , H01L2924/00014 , H01L2933/0016
Abstract: There is provided a semiconductor light emitting device including a conductive substrate, a first electrode layer, an insulating layer, a second electrode layer, a second semiconductor layer, an active layer, and a first semiconductor layer that are sequentially stacked. The contact area between the first electrode layer and the first semiconductor layer is 3% to 13% of the total area of the semiconductor light emitting device, and thus high luminous efficiency is achieved.
Abstract translation: 提供一种半导体发光器件，其包括依次堆叠的导电衬底，第一电极层，绝缘层，第二电极层，第二半导体层，有源层和第一半导体层。 第一电极层和第一半导体层之间的接触面积为半导体发光元件的总面积的3〜13％，实现了高的发光效率。
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公开(公告)号：US09997663B2
公开(公告)日：2018-06-12
申请号：US15604469
申请日：2017-05-24
Applicant: SAMSUNG ELECTRONICS CO., LTD.
Inventor： Pun Jae Choi , Yu Seung Kim , Jin Bock Lee
CPC classification number: H01L33/0075 , H01L33/0079 , H01L33/08 , H01L33/20 , H01L33/22 , H01L33/38 , H01L33/382 , H01L33/40 , H01L33/405 , H01L33/42 , H01L2224/48091 , H01L2224/48247 , H01L2924/00014 , H01L2933/0016
Abstract: There is provided a semiconductor light emitting device including a conductive substrate, a first electrode layer, an insulating layer, a second electrode layer, a second semiconductor layer, an active layer, and a first semiconductor layer that are sequentially stacked. The contact area between the first electrode layer and the first semiconductor layer is 3% to 13% of the total area of the semiconductor light emitting device, and thus high luminous efficiency is achieved.
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公开(公告)号：US09601665B2
公开(公告)日：2017-03-21
申请号：US14828004
申请日：2015-08-17
Applicant: Samsung Electronics Co., Ltd.
Inventor： Sung Hyun Sim , Geon Wook Yoo , Mi Hyun Kim , Dong Hoon Lee , Jin Bock Lee , Je Won Kim , Hye Seok Noh , Dong Kuk Lee
CPC classification number: H01L33/24 , F21K9/232 , F21Y2115/10 , H01L33/08 , H01L33/38
Abstract: A nanostructure semiconductor light emitting device may includes: a base layer having first and second regions and formed of a first conductivity-type semiconductor material; a plurality of light emitting nanostructures disposed on an upper surface of the base layer, each of which including a nanocore formed of the first conductivity-type semiconductor material, and an active layer and a second conductivity-type semiconductor layer sequentially disposed on the nanocore; and a contact electrode disposed on the plurality of light emitting nanostructures, wherein a tip portion of each of light emitting nanostructures disposed on the first region may not be covered with the contact electrode, and a tip portion of each of light emitting nanostructures disposed on the second region may be covered with the contact electrode.
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公开(公告)号：US09305906B2
公开(公告)日：2016-04-05
申请号：US14336973
申请日：2014-07-21
Applicant: SAMSUNG ELECTRONICS CO., LTD.
Inventor： Pun Jae Choi , Sang Bum Lee , Jin Bock Lee , Yu Seung Kim , Sang Yeob Song
IPC: H01L33/56 , H01L25/13 , H01L33/20 , H01L33/38 , H01L33/00 , H01L33/40 , H01L33/44 , H01L33/48 , H01L33/54 , H05B33/08 , H01L25/075 , H01L33/50
CPC classification number: H01L25/13 , H01L25/0753 , H01L33/002 , H01L33/0025 , H01L33/0029 , H01L33/08 , H01L33/20 , H01L33/22 , H01L33/382 , H01L33/387 , H01L33/40 , H01L33/44 , H01L33/486 , H01L33/502 , H01L33/504 , H01L33/507 , H01L33/508 , H01L33/54 , H01L33/56 , H01L2224/48091 , H01L2224/48227 , H01L2224/48247 , H01L2224/48257 , H01L2224/48465 , H01L2224/49175 , H01L2224/8592 , H01L2924/0002 , H01L2924/1461 , H01L2924/181 , H01L2924/3025 , H01L2933/0041 , H05B33/0803 , H01L2924/00014 , H01L2924/00 , H01L2924/00012
Abstract: In a semiconductor light emitting device, a light emitting structure includes a first-conductivity type semiconductor layer, an active layer, and a second-conductivity type semiconductor layer, which are sequentially formed on a conductive substrate. A second-conductivity type electrode includes a conductive via and an electrical connection part. The conductive via passes through the first-conductivity type semiconductor layer and the active layer, and is connected to the inside of the second-conductivity type semiconductor layer. The electrical connection part extends from the conductive via and is exposed to the outside of the light emitting structure. An insulator electrically separates the second-conductivity type electrode from the conductive substrate, the first-conductivity type semiconductor layer, and the active layer. A passivation layer is formed to cover at least a side surface of the active layer in the light emitting structure. An uneven structure is formed on a path of light emitted from the active layer.
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