Air condtioner
    1.
    发明授权

    公开(公告)号:US10739040B2

    公开(公告)日:2020-08-11

    申请号:US15643050

    申请日:2017-07-06

    Abstract: Disclosed herein is an air conditioner in which flow noise of a refrigerant is reduced. An air conditioner includes a compressor configured to compress a refrigerant, an outdoor heat exchanger in which the refrigerant exchanges heat with outside air, an expansion device configured to expand the refrigerant, an indoor heat exchanger in which the refrigerant exchanges heat with indoor air, and a muffler configured to reduce flow noise of the refrigerant flowing into the indoor heat exchanger, wherein the muffler includes a shell including a refrigerant inlet and a refrigerant outlet, a first baffle disposed at one side of an inner part of the shell and including a plurality of first holes, a plurality of pipes inserted into the plurality of first holes and serving as passages through which the refrigerant moves, and a second baffle disposed at the other side of the inner part of the shell and including a plurality of second holes through which the refrigerant passing through the pipe passes.

    Semiconductor light emitting device
    2.
    发明授权
    Semiconductor light emitting device 有权
    半导体发光器件

    公开(公告)号:US08969901B2

    公开(公告)日:2015-03-03

    申请号:US13896166

    申请日:2013-05-16

    CPC classification number: H01L33/405 H01L33/145 H01L33/42

    Abstract: A light emitting device includes a first semiconductor layer, an active layer, and a second semiconductor layer, and first and second electrodes electrically connected to the first and second semiconductor layers, respectively. The second electrode includes a reflective pad portion, a transparent electrode layer, a reflective finger portion and an electrode pad portion. The reflective pad portion is disposed in a region of an upper surface of the second semiconductor layer. The transparent electrode layer is disposed on the second semiconductor layer and has an opening encompassing the reflective pad portion such that the transparent electrode layer is not in contact with the reflective pad portion. The reflective finger portion extends from the reflective pad portion and has at least a portion thereof disposed on the transparent electrode layer. The electrode pad portion covers the reflective pad portion to be in contact with the transparent electrode layer.

    Abstract translation: 发光器件包括第一半导体层,有源层和第二半导体层,以及分别与第一和第二半导体层电连接的第一和第二电极。 第二电极包括反射焊盘部分,透明电极层,反射指状部分和电极焊盘部分。 反射焊盘部分设置在第二半导体层的上表面的区域中。 透明电极层设置在第二半导体层上,并且具有包围反射焊盘部分的开口,使得透明电极层不与反射焊盘部分接触。 反射指部从反射板部延伸,并且其至少一部分设置在透明电极层上。 电极焊盘部分覆盖与透明电极层接触的反射焊盘部分。

    Semiconductor light emitting device
    3.
    发明授权
    Semiconductor light emitting device 有权
    半导体发光器件

    公开(公告)号:US08946751B2

    公开(公告)日:2015-02-03

    申请号:US14015095

    申请日:2013-08-30

    Abstract: A semiconductor light emitting device includes a first conductivity-type semiconductor layer, an active layer and a second conductivity-type semiconductor layer sequentially stacked on a substrate. A first electrode is disposed on a portion of the first conductivity-type semiconductor layer. A current diffusion layer is disposed on the second conductivity-type semiconductor layer and includes an opening exposing a portion of the second conductivity-type semiconductor layer. A second electrode covers a portion of the current diffusion layer and the exposed portion of the second conductivity-type semiconductor layer, wherein the portion of the current diffusion layer is near the opening.

    Abstract translation: 半导体发光器件包括依次层叠在基板上的第一导电型半导体层,有源层和第二导电型半导体层。 第一电极设置在第一导电型半导体层的一部分上。 电流扩散层设置在第二导电型半导体层上,并且包括露出第二导电型半导体层的一部分的开口。 第二电极覆盖电流扩散层的一部分和第二导电型半导体层的暴露部分,其中电流扩散层的部分靠近开口。

    Light source module and display apparatus having the same

    公开(公告)号:US10204962B2

    公开(公告)日:2019-02-12

    申请号:US15218483

    申请日:2016-07-25

    Abstract: A display apparatus may include a light source module that may include a substrate having a plurality of chip mounting areas of which each has a connection pad disposed therein, and a plurality of semiconductor light emitting devices electrically coupled to separate connection pads. The display apparatus may include a black matrix on the substrate and having a plurality of holes corresponding to the pattern of chip mounting areas. The semiconductor light emitting devices may be in separate, respective holes to be electrically coupled to separate connection pads. The display apparatus may include unit pixels, where each unit pixel includes multiple adjacent semiconductor light emitting devices. The semiconductor light emitting devices may be removably coupled to separate connection pads, and a semiconductor light emitting device may be interchangeably swapped from a connection pad.

    Semiconductor light emitting device and method for manufacturing the same
    6.
    发明授权
    Semiconductor light emitting device and method for manufacturing the same 有权
    半导体发光器件及其制造方法

    公开(公告)号:US09076928B2

    公开(公告)日:2015-07-07

    申请号:US13906044

    申请日:2013-05-30

    CPC classification number: H01L33/36 H01L27/15 H01L33/02

    Abstract: A semiconductor light emitting device is provided and includes a protective element including a first lower conductivity-type semiconductor layer and a second lower conductivity-type semiconductor layer. First and second lower electrodes are connected to the first lower conductivity-type semiconductor layer and the second lower conductivity-type semiconductor layer, respectively. A light emitting structure includes a first upper conductivity-type semiconductor layer, an active layer, and a second upper conductivity-type semiconductor layer sequentially formed on the protective element. First and second upper electrodes are connected to the first upper conductivity-type semiconductor layer and the second upper conductivity-type semiconductor layer, respectively.

    Abstract translation: 提供了半导体发光器件,并且包括具有第一下导电型半导体层和第二下导电型半导体层的保护元件。 第一和第二下电极分别连接到第一下导电型半导体层和第二下导电型半导体层。 发光结构包括依次形成在保护元件上的第一上导电型半导体层,有源层和第二上导电型半导体层。 第一上电极和第二上电极分别连接到第一上导电型半导体层和第二上导电型半导体层。

    Semiconductor light emitting device and method of manufacturing the same
    7.
    发明授权
    Semiconductor light emitting device and method of manufacturing the same 有权
    半导体发光器件及其制造方法

    公开(公告)号:US09484500B2

    公开(公告)日:2016-11-01

    申请号:US14300642

    申请日:2014-06-10

    CPC classification number: H01L33/42 H01L33/38 H01L33/405 H01L33/46

    Abstract: A semiconductor light emitting device and method of manufacturing the semiconductor light emitting device are provided. The semiconductor light emitting device includes a light emitting structure including a first conductivity type semiconductor layer, an active layer, and a second conductivity type semiconductor layer. The device may also includes a first electrode connected to the first conductivity type semiconductor layer, and a second electrode connected to the second conductivity type semiconductor layer and having a pad region and a finger region extended from the pad region in one direction. The second electrode may include a transparent electrode part positioned on the second conductivity type semiconductor layer and including at least one opening therein, at least one reflective part spaced apart from the transparent electrode part within the opening and disposed in the pad region and the finger region, and a bonding part positioned on at least one portion of the reflective part and including a plurality of bonding finger parts spaced apart from each other in the finger region and a bonding pad part disposed in the pad region.

    Abstract translation: 提供半导体发光器件和制造半导体发光器件的方法。 半导体发光器件包括包括第一导电类型半导体层,有源层和第二导电类型半导体层的发光结构。 该器件还可以包括连接到第一导电类型半导体层的第一电极和连接到第二导电类型半导体层的第二电极,并且具有在一个方向上从焊盘区域延伸的焊盘区域和手指区域。 第二电极可以包括位于第二导电类型半导体层上并且包括其中的至少一个开口的透明电极部分,至少一个反射部分与开口内的透明电极部分间隔开并且设置在焊盘区域中,并且指状区域 以及位于所述反射部分的至少一部分上并且包括在所述手指区域中彼此间隔开的多个接合指状部分的接合部分和设置在所述焊盘区域中的接合焊盘部分。

    SEMICONDUCTOR LIGHT EMITTING DEVICE
    8.
    发明申请
    SEMICONDUCTOR LIGHT EMITTING DEVICE 有权
    半导体发光器件

    公开(公告)号:US20140070252A1

    公开(公告)日:2014-03-13

    申请号:US14015095

    申请日:2013-08-30

    Abstract: A semiconductor light emitting device includes a first conductivity-type semiconductor layer, an active layer and a second conductivity-type semiconductor layer sequentially stacked on a substrate. A first electrode is disposed on a portion of the first conductivity-type semiconductor layer. A current diffusion layer is disposed on the second conductivity-type semiconductor layer and includes an opening exposing a portion of the second conductivity-type semiconductor layer. A second electrode covers a portion of the current diffusion layer and the exposed portion of the second conductivity-type semiconductor layer, wherein the portion of the current diffusion layer is near the opening.

    Abstract translation: 半导体发光器件包括依次层叠在基板上的第一导电型半导体层,有源层和第二导电型半导体层。 第一电极设置在第一导电型半导体层的一部分上。 电流扩散层设置在第二导电型半导体层上,并且包括露出第二导电型半导体层的一部分的开口。 第二电极覆盖电流扩散层的一部分和第二导电型半导体层的暴露部分,其中电流扩散层的部分靠近开口。

    Semiconductor light emitting device including a pad electrode spaced apart from a transparent electrode
    10.
    发明授权
    Semiconductor light emitting device including a pad electrode spaced apart from a transparent electrode 有权
    半导体发光器件包括与透明电极间隔开的焊盘电极

    公开(公告)号:US09548422B2

    公开(公告)日:2017-01-17

    申请号:US14454612

    申请日:2014-08-07

    Abstract: A semiconductor light emitting device includes a light emitting structure and first and second electrodes. The light emitting structure includes first and second conductivity type semiconductor layers and an active layer interposed therebetween. The first and second electrodes are electrically connected to the first and second conductivity type semiconductor layers. The second electrode includes a current blocking layer, a reflective part disposed on the current blocking layer, a transparent electrode layer disposed on the second conductivity type semiconductor layer, a pad electrode part disposed within a region of the current blocking layer, and at least one finger electrode part disposed at least in part on the transparent electrode layer. The transparent electrode layer can be spaced apart from the reflective part, and have an opening surrounding the reflective part. In some examples, the transparent electrode layer can further be spaced apart from the current blocking layer.

    Abstract translation: 半导体发光器件包括发光结构和第一和第二电极。 发光结构包括第一和第二导电类型的半导体层和介于它们之间的有源层。 第一和第二电极电连接到第一和第二导电类型半导体层。 第二电极包括电流阻挡层,设置在电流阻挡层上的反射部分,设置在第二导电类型半导体层上的透明电极层,设置在电流阻挡层的区域内的焊盘电极部分,以及至少一个 指状电极部分至少部分地设置在透明电极层上。 透明电极层可以与反射部分间隔开,并且具有围绕反射部分的开口。 在一些示例中,透明电极层可以进一步与电流阻挡层间隔开。

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