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    Composition for forming silica layer, silica layer, and electronic device
    2.
    发明授权
    Composition for forming silica layer, silica layer, and electronic device 有权

    公开(公告)号：US10804095B2

    公开(公告)日：2020-10-13

    申请号：US16163170

    申请日：2018-10-17

    申请人： Samsung SDI Co., Ltd.

    发明人： Jin-Hee Bae ,  Taeksoo Kwak ,  Byeonggyu Hwang ,  Kunbae Noh ,  Jun Sakong ,  Jinwoo Seo ,  Junyoung Jang

    IPC分类号： H01L21/02 ,  C01B21/068 ,  C09D183/16 ,  C08G77/62

    摘要： A composition for forming a silica layer includes a silicon-containing polymer and a solvent, the composition having a SiO2 conversion rate of greater than about 0 and less than or equal to about 15. The SiO2 conversion rate is represented by: SiO2 conversion rate=(a ratio of an area of Si—O to an area of Si—H measured after coating the composition in a thickness of 6700 Å on a bare wafer, and allowing the coated wafer to stand for 24 hours under conditions of a temperature of 85° C. and a relative humidity of 85%)−(a ratio of an area of Si—O to an area of Si—H measured after coating the composition in a thickness of 6700 Å on a bare wafer, and allowing the coated wafer to stand for 2 hours under conditions of a temperature of 85° C. and a relative humidity of 85%).

    Method of forming patterns, patterns formed according to the method, and semiconductor device including the patterns
    4.
    发明授权
    Method of forming patterns, patterns formed according to the method, and semiconductor device including the patterns 有权

    公开(公告)号：US10153171B2

    公开(公告)日：2018-12-11

    申请号：US15704054

    申请日：2017-09-14

    申请人： SAMSUNG SDI CO., LTD.

    发明人： Huichan Yun ,  TaekSoo Kwak ,  Jin-Hee Bae ,  Jinwoo Seo ,  Kunbae Noh ,  Junyoung Jang

    IPC分类号： H01L21/308 ,  H01L21/033 ,  H01L21/3213 ,  H01L21/311

    摘要： A method of forming patterns, patterns formed according to the method, and a semiconductor device including the patterns, the method including forming an etching subject layer on a substrate, forming a first layer on the etching subject layer such that the first layer has a projecting pattern, forming a second layer such that the second layer completely covers the projecting pattern of the first layer, partially removing the second layer such that a top of the projecting pattern is exposed and a patterned second layer remains at a side of the projecting pattern, removing the first layer such that a top of the etching subject layer is exposed, and etching the etching subject layer using the patterned second layer as an etching mask, wherein one of the first layer and the second layer is a carbon-containing layer and the other is a silicon-containing layer, and the silicon-containing layer is formed by coating a silicon-containing composition and heat-treating the same.