公开(公告)号：US20250169175A1

公开(公告)日：2025-05-22

申请号：US18839558

申请日：2023-02-21

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Yasuharu HOSAKA ,  Yukinori SHIMA ,  Masami JINTYOU ,  Masataka NAKADA ,  Junichi KOEZUKA ,  Kenichi OKAZAKI

IPC: H10D84/85 ,  H10D30/01 ,  H10D30/67 ,  H10D86/01 ,  H10D86/40 ,  H10D86/60

Abstract: A novel semiconductor device is provided. The semiconductor device combines a lateral-channel transistor and a vertical-channel transistor. The lateral-channel transistor is employed as a p-channel transistor and the vertical-channel transistor is employed as an n-channel transistor to achieve a CMOS semiconductor device. An opening is provided in the insulating layer in a region overlapping with a gate electrode of the lateral-channel transistor, and the vertical-channel transistor is formed in the opening. An oxide semiconductor is used for a semiconductor layer of the vertical-channel transistor.

公开(公告)号：US20250098439A1

公开(公告)日：2025-03-20

申请号：US18729577

申请日：2023-01-17

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Yasuharu HOSAKA ,  Yukinori SHIMA ,  Masami JINTYOU ,  Masataka NAKADA ,  Junichi KOEZUKA ,  Kenichi OKAZAKI

IPC: H10K59/124 ,  H10K59/123

Abstract: A display apparatus with high definition is provided. The display apparatus includes a transistor, a light-emitting device and a first insulating layer. The transistor includes a semiconductor layer, first to third conductive layers, and second and third insulating layers. The second insulating layer is provided over the first conductive layer and includes a first opening reaching the first conductive layer. The second conductive layer is provided over the second insulating layer and includes a second opening in a region overlapping with the first opening. The semiconductor layer is in contact with the top surface of the first conductive layer, the side surface of the second insulating layer, and the top surface and the side surface of the second conductive layer. The third insulating layer is provided over the semiconductor layer. The third conductive layer is provided over the third insulating layer. The first insulating layer is provided over the transistor. The first insulating layer and the third insulating layer include a third opening reaching the second conductive layer. The light-emitting device is provided over the first insulating layer and includes a pixel electrode, a common electrode, and an EL layer. The pixel electrode is electrically connected to the second conductive layer through the third opening. The EL layer includes a region in contact with the top surface and the side surface of the pixel electrode.

公开(公告)号：US20250063893A1

公开(公告)日：2025-02-20

申请号：US18723543

申请日：2022-12-15

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Ryota HODO ,  Kenichi OKAZAKI ,  Shunpei YAMAZAKI

IPC: H10K59/122 ,  H10K59/00 ,  H10K59/12

Abstract: A display apparatus with high display quality is provided. The display apparatus includes a first light-emitting device, a second light-emitting device, and a layer. The first light-emitting device includes a first pixel electrode, a first light-emitting layer over the first pixel electrode, a first common electrode over the first light-emitting layer, and a second common electrode over the first common electrode. The second light-emitting device includes a second pixel electrode, a second light-emitting layer over the second pixel electrode, the first common electrode over the second light-emitting layer, and the second common electrode over the first common electrode. The layer is provided between the first light-emitting device and the second light-emitting device. The second common electrode is provided over the layer.

公开(公告)号：US20240321577A1

公开(公告)日：2024-09-26

申请号：US18668768

申请日：2024-05-20

Applicant: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.

Inventor： Toshimitsu OBONAI ,  Yasuharu HOSAKA ,  Kenichi OKAZAKI ,  Masahiro TAKAHASHI ,  Tomonori NAKAYAMA ,  Tomosato KANAGAWA ,  Shunpei YAMAZAKI

IPC: H01L21/02 ,  C23C14/00 ,  C23C14/08 ,  C23C14/34 ,  H01L21/66

CPC classification number: H01L21/02554 ,  C23C14/081 ,  C23C14/086 ,  C23C14/087 ,  C23C14/34 ,  H01L21/02488 ,  H01L21/02565 ,  H01L21/02595 ,  H01L21/02609 ,  H01L21/02631 ,  H01L22/12 ,  C23C14/0036 ,  C23C14/08

Abstract: A metal oxide film with high electrical characteristics is provided. A metal oxide film with high reliability is provided. The metal oxide film contains indium, M (M is aluminum, gallium, yttrium, or tin), and zinc. In the metal oxide film, distribution of interplanar spacings d determined by electron diffraction by electron beam irradiation from a direction perpendicular to a film surface of the metal oxide film has a first peak and a second peak. The top of the first peak is positioned at greater than or equal to 0.25 nm and less than or equal to 0.30 nm, and the top of the second peak is positioned at greater than or equal to 0.15 nm and less than or equal to 0.20 nm. The distribution of the interplanar spacings d is obtained from a plurality of electron diffraction patterns of a plurality of regions of the metal oxide film. The electron diffraction is performed using an electron beam with a beam diameter of greater than or equal to 0.3 nm and less than or equal to 10 nm.

公开(公告)号：US20240306410A1

公开(公告)日：2024-09-12

申请号：US18663359

申请日：2024-05-14

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Shingo EGUCHI ,  Yoshiaki OIKAWA ,  Kenichi OKAZAKI ,  Hotaka MARUYAMA

IPC: H10K50/11 ,  H01L27/12 ,  H01L29/786 ,  H10K59/121 ,  H10K59/126 ,  H10K59/131 ,  H10K77/10

CPC classification number: H10K50/11 ,  H01L27/12 ,  H01L27/1225 ,  H10K59/1213 ,  H10K59/126 ,  H10K59/131 ,  H10K77/111 ,  H01L27/124 ,  H01L29/78678 ,  H01L29/7869

Abstract: An object of the invention is to improve the reliability of a light-emitting device. Another object of the invention is to provide flexibility to a light-emitting device having a thin film transistor using an oxide semiconductor film. A light-emitting device has, over one flexible substrate, a driving circuit portion including a thin film transistor for a driving circuit and a pixel portion including a thin film transistor for a pixel. The thin film transistor for a driving circuit and the thin film transistor for a pixel are inverted staggered thin film transistors including an oxide semiconductor layer which is in contact with a part of an oxide insulating layer.

公开(公告)号：US20240276789A1

公开(公告)日：2024-08-15

申请号：US18567650

申请日：2022-06-06

Applicant: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.

Inventor： Kenichi OKAZAKI ,  Daiki NAKAMURA ,  Nozomu SUGISAWA

IPC: H10K59/122 ,  H10K59/80

CPC classification number: H10K59/122 ,  H10K59/80521

Abstract: A high-resolution display apparatus is provided. The display apparatus includes a first light-emitting device, a second light-emitting device positioned next to the first light-emitting device, a third light-emitting device positioned next to the second light-emitting device, a first insulating layer, and a second insulating layer. The first insulating layer includes a first region between the first light-emitting device and the second light-emitting device and a second region between the second light-emitting device and the third light-emitting device. The second insulating layer includes a region positioned over a lower electrode of the third light-emitting device. A thickness of a third organic compound layer of the third light-emitting device is different from a thickness of a first organic compound layer of the first light-emitting device. The thickness of the third organic compound layer of the third light-emitting device is different from a thickness of a second organic compound layer of the second light-emitting device. In a cross-sectional view, the first insulating layer is provided so that a height from a bottom surface of the lower electrode of the third light-emitting device is equal to a height from a bottom surface of a lower electrode of the second light-emitting device.

公开(公告)号：US20240268180A1

公开(公告)日：2024-08-08

申请号：US18566682

申请日：2022-05-27

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Takayuki IKEDA ,  Kenichi OKAZAKI ,  Yoshiaki OIKAWA ,  Natsuko TAKASE ,  Kensuke YOSHIZUMI

IPC: H10K59/38 ,  H10K50/13 ,  H10K50/19 ,  H10K71/60

CPC classification number: H10K59/38 ,  H10K50/13 ,  H10K50/19 ,  H10K71/60

Abstract: A display apparatus with high resolution or high definition is provided. The display apparatus includes a first light-emitting device, a second light-emitting device, a first insulating layer, a first coloring layer, and a second coloring layer. The first light-emitting device includes a first pixel electrode, a first EL layer, and a common electrode that are stacked in this order. The second light-emitting device includes a second pixel electrode, a second EL layer, and the common electrode that are stacked in this order. The first coloring layer overlaps with the first light-emitting device. The second coloring layer transmitting light of a color different from a color of light transmitted by the first coloring layer overlaps with the second light-emitting device. The first EL layer and the second EL layer have the same structure and are separated from each other. An end portion of the first EL layer is positioned over the first pixel electrode. An end portion of the second EL layer is positioned over the second pixel electrode. The first insulating layer covers side surfaces of the first pixel electrode, the second pixel electrode, the first EL layer, and the second EL layer. The common electrode is positioned over the first insulating layer.

公开(公告)号：US20240192558A1

公开(公告)日：2024-06-13

申请号：US18527464

申请日：2023-12-04

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Masatoshi YOKOYAMA ,  Shigeki KOMORI ,  Manabu SATO ,  Kenichi OKAZAKI ,  Shunpei YAMAZAKI

IPC: G02F1/1362 ,  G02F1/1333 ,  G02F1/1343

CPC classification number: G02F1/136227 ,  G02F1/133345 ,  G02F1/134309 ,  G02F1/13439 ,  G02F1/136277 ,  G02F1/134372 ,  G02F2202/02 ,  G02F2202/10

Abstract: To suppress a variation in characteristics of a transistor due to a released gas from an organic insulating film so that reliability of a display device is increased. The display device includes a transistor, an organic insulating film which is provided over the transistor in order to reduce unevenness due to the transistor, and a capacitor over the organic insulating film. An entire surface of the organic insulating film is not covered with components (a transparent conductive layer and an inorganic insulating film) of the capacitor, and a released gas from the organic insulating film can be released to the outside from exposed part of an upper surface of the organic insulating film.

公开(公告)号：US20240188404A1

公开(公告)日：2024-06-06

申请号：US18285529

申请日：2022-03-29

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Shunpei Yamazaki ,  Kenichi OKAZAKI ,  Koji KUSUNOKI ,  Hideaki KUWABARA ,  Yoshiaki OIKAWA

IPC: H10K59/95 ,  H10K102/00

CPC classification number: H10K59/95 ,  H10K2102/311

Abstract: A display apparatus with a novel structure is provided. The display apparatus includes a display surface, a flexible non-rectangular substrate over which part of the display surface is formed, and a light-emitting device formed over the flexible substrate. The light-emitting device includes pixel regions formed in a matrix. The display surface has a convex or concave region when part of the flexible non-rectangular substrate is bent. A novel light-emitting apparatus, a novel display apparatus, a novel input/output apparatus, or a novel semiconductor apparatus can be achieved. The display apparatus enables the degree of design flexibility of a display apparatus to be increased and design of the display apparatus to be improved.

公开(公告)号：US20240164175A1

公开(公告)日：2024-05-16

申请号：US18284612

申请日：2022-04-08

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Shunpei YAMAZAKI ,  Kenichi OKAZAKI ,  Daisuke KUBOTA

IPC: H10K59/65 ,  H10K50/19 ,  H10K71/16 ,  H10K71/20 ,  H10K71/60

CPC classification number: H10K59/65 ,  H10K50/19 ,  H10K71/166 ,  H10K71/231 ,  H10K71/60

Abstract: A display apparatus having an image capturing function is provided. A display apparatus or an imaging device with a high aperture ratio is provided. The display apparatus includes a first light-emitting element and a light-receiving element. The first light-emitting element is formed by stacking a first pixel electrode, a first organic layer, and a common electrode in this order. The light-receiving element is formed by stacking a second pixel electrode, a second organic layer, and the common electrode in this order. The first organic layer includes a first light-emitting layer, and the second organic layer includes a photoelectric conversion layer. A first layer and a second layer are included in a region between the first light-emitting element and the light-receiving element. The first layer overlaps with the second organic layer and contains the same material as the first organic layer. The second layer overlaps with the first organic layer and contains the same material as the second organic layer. In the region between the first light-emitting element and the light-receiving element, an end portion of the first organic layer and an end portion of the first layer face each other and an end portion of the second organic layer and an end portion of the second layer face each other.