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    Light emitting device
    1.
    发明授权
    Light emitting device 有权

    公开(公告)号：US10340309B2

    公开(公告)日：2019-07-02

    申请号：US15898644

    申请日：2018-02-18

    申请人： Seoul Viosys Co., Ltd.

    发明人： Jong Lam Lee ,  Jae Ho Lee ,  Yeo Jin Yoon ,  Eu Jin Hwang ,  Dae Won Kim

    IPC分类号： H01L27/15 ,  H01L33/32 ,  H01L33/08 ,  H01L33/24 ,  H01L33/62 ,  H01L33/20 ,  H01L33/38 ,  H01L33/44 ,  H01L27/32 ,  H01L33/28 ,  H01L51/52

    摘要： A light emitting device includes a substrate and a plurality of light emitting cells disposed on the substrate. Each light emitting cell includes a first semiconductor layer and a second semiconductor layer, an active layer between the first and the second semiconductors, a conductive material on the second semiconductor layer, an inclined surface, a first insulation layer overlaps each light emitting cell, an electrically conductive material overlaps the first insulation layer to couple two of the plurality of light emitting cells, and a second insulation layer overlaps the electrically conductive material. A light-transmitting material is used in both the first insulation layer and the second insulation layer. The inclined surface is continuous and has a slope of approximately 20° to approximately 80° from a horizontal plane based on the substrate.

    AC LIGHT EMITTING DEVICE WITH LONG-PERSISTENT PHOSPHOR AND LIGHT EMITTING DEVICE MODULE HAVING THE SAME
    7.
    发明申请
    AC LIGHT EMITTING DEVICE WITH LONG-PERSISTENT PHOSPHOR AND LIGHT EMITTING DEVICE MODULE HAVING THE SAME 审中-公开
    具有长时间荧光的交流发光装置和具有其的发光装置模块

    公开(公告)号：US20140328056A1

    公开(公告)日：2014-11-06

    申请号：US14295134

    申请日：2014-06-03

    申请人： Seoul Viosys Co., Ltd.

    发明人： Chung Hoon Lee ,  Yeo Jin Yoon ,  Dae Won Kim ,  Dae Sung Cho ,  Kyung Hee Ye

    IPC分类号： H01L33/50 ,  F21V23/06 ,  F21K99/00

    CPC分类号： H01L33/504 ,  F21K9/00 ,  F21K9/62 ,  F21K9/64 ,  F21V23/06 ,  F21Y2113/13 ,  F21Y2115/10 ,  H01L25/0753 ,  H01L33/50 ,  H01L2224/48137 ,  H01L2224/49107 ,  H05B33/0821

    摘要： An AC light emitting device includes a first light emitting diode chip and a second light emitting diode chip, each of which has a plurality of light emitting cells on a single substrate. A first long-persistent phosphor is positioned on the first light emitting diode chip to perform wavelength conversion for a portion of light emitted from the first light emitting diode chip, and a second long-persistent phosphor is positioned on the second light emitting diode chip to perform wavelength conversion for a portion of light emitted from the second light emitting diode chip. The afterglow luminescence period of the second long-persistent phosphor is different from that of the first long-persistent phosphor.

    摘要翻译： 交流发光装置包括第一发光二极管芯片和第二发光二极管芯片，每个芯片在单个基板上具有多个发光单元。 第一长持续荧光体位于第一发光二极管芯片上以对从第一发光二极管芯片发射的光的一部分进行波长转换，并且第二长持续荧光体位于第二发光二极管芯片上 对从第二发光二极管芯片发射的光的一部分进行波长转换。 第二长持续荧光体的余辉发光期与第一长持续荧光体不同。

    LIGHT EMITTING DEVICE
    8.
    发明申请
    LIGHT EMITTING DEVICE 审中-公开
    发光装置

    公开(公告)号：US20160087003A1

    公开(公告)日：2016-03-24

    申请号：US14958253

    申请日：2015-12-03

    申请人： Seoul Viosys Co., Ltd.

    发明人： Jong Lam Lee ,  Jae Ho Lee ,  Yeo Jin Yoon ,  Eu Jin Hwang ,  Dae Won Kim

    IPC分类号： H01L27/15 ,  H01L33/62

    CPC分类号： H01L27/15 ,  H01L27/153 ,  H01L27/3281 ,  H01L33/08 ,  H01L33/20 ,  H01L33/24 ,  H01L33/28 ,  H01L33/32 ,  H01L33/385 ,  H01L33/44 ,  H01L33/62 ,  H01L51/5253 ,  H01L2224/45144 ,  H01L2224/48095 ,  H01L2224/48137 ,  H01L2933/0066 ,  H01L2924/00

    摘要： A light emitting device includes a substrate and a plurality of light emitting cells disposed on the substrate. Each light emitting cell includes a first semiconductor layer and a second semiconductor layer, an active layer between the first and the second semiconductors, a conductive material on the second semiconductor layer, an inclined surface, a first insulation layer overlaps each light emitting cell, an electrically conductive material overlaps the first insulation layer to couple two of the plurality of light emitting cells, and a second insulation layer overlaps the electrically conductive material. A light-transmitting material is used in both the first insulation layer and the second insulation layer. The inclined surface is continuous and has a slope of approximately 20° to approximately 80° from a horizontal plane based on the substrate.

    摘要翻译： 发光器件包括衬底和设置在衬底上的多个发光单元。 每个发光单元包括第一半导体层和第二半导体层，第一和第二半导体之间的有源层，第二半导体层上的导电材料，倾斜表面，与每个发光单元重叠的第一绝缘层， 导电材料与第一绝缘层重叠以耦合多个发光单元中的两个，并且第二绝缘层与导电材料重叠。 在第一绝缘层和第二绝缘层中都使用透光材料。 倾斜表面是连续的，并且具有基于基底的水平面大约20°至大约80°的斜率。

    Light emitting device and method of manufacturing the same
    9.
    发明授权
    Light emitting device and method of manufacturing the same 有权
    发光元件及其制造方法

    公开(公告)号：US08895957B2

    公开(公告)日：2014-11-25

    申请号：US14015411

    申请日：2013-08-30

    申请人： Seoul Viosys Co., Ltd.

    发明人： Jong Lam Lee ,  Jae Ho Lee ,  Yeo Jin Yoon ,  Eu Jin Hwang ,  Dae Won Kim

    IPC分类号： H01L33/24 ,  H01L33/08 ,  H01L27/15 ,  H01L33/20 ,  H01L33/38 ,  H01L33/44

    CPC分类号： H01L27/15 ,  H01L27/153 ,  H01L27/3281 ,  H01L33/08 ,  H01L33/20 ,  H01L33/24 ,  H01L33/28 ,  H01L33/32 ,  H01L33/385 ,  H01L33/44 ,  H01L33/62 ,  H01L51/5253 ,  H01L2224/45144 ,  H01L2224/48095 ,  H01L2224/48137 ,  H01L2933/0066 ,  H01L2924/00

    摘要： The present invention relates to a light emitting device. The light emitting device comprises a substrate, an N-type semiconductor layer formed on the substrate, and a P-type semiconductor layer formed on the N-type semiconductor layer, wherein a side surface including the N-type or P-type semiconductor layer has a slope of 20 to 80° from a horizontal plane. Further, a light emitting device comprises a substrate formed with a plurality of light emitting cells each including an N-type semiconductor layer and a P-type semiconductor layer formed on the N-type semiconductor layer, wherein the N-type semiconductor layer of one light emitting cell and the P-type semiconductor layer of another adjacent light emitting cell are connected to each other, and a side surface including at least the P-type semiconductor layer of the light emitting cell has a slope of 20 to 80° from a horizontal plane.

    摘要翻译： 本发明涉及一种发光装置。 发光器件包括衬底，形成在衬底上的N型半导体层和形成在N型半导体层上的P型半导体层，其中包括N型或P型半导体层的侧表面 与水平面的斜率为20〜80°。 此外，发光器件包括形成有多个发光单元的衬底，每个发光单元包括形成在N型半导体层上的N型半导体层和P型半导体层，其中，一个N型半导体层 发光单元和另一个相邻的发光单元的P型半导体层彼此连接，并且至少包括发光单元的P型半导体层的侧表面具有从80°到20°的斜率 水平面。