公开(公告)号：US20190167219A1

公开(公告)日：2019-06-06

申请号：US16321297

申请日：2017-07-10

Applicant: Shimadzu Corporation ,  OSAKA UNIVERSITY

Inventor： Satoshi SANO ,  Koichi TANABE ,  Toshinori YOSHIMUTA ,  Kenji KIMURA ,  Hiroyuki KISHIHARA ,  Yukihisa WADA ,  Takuro IZUMI ,  Taro SHIRAI ,  Takahiro DOKI ,  Akira HORIBA ,  Takayoshi SHIMURA ,  Heiji WATANABE ,  Takuji HOSOI

IPC: A61B6/00

Abstract: This X-ray phase contrast imaging apparatus (100) includes an X-ray source (1) that radiates continuous X-rays, a first grating (3) that forms a self-image, a second grating (4), a detector (5) that detects the continuous X-rays, and a third grating (2) arranged between the detector (5) and the first grating 3. The first grating (3), the second grating (4), and the third grating (2) are arranged so as to satisfy conditions of predetermined formulas.

公开(公告)号：US20200158662A1

公开(公告)日：2020-05-21

申请号：US16319574

申请日：2017-07-10

Applicant: Shimadzu Corporation ,  OSAKA UNIVERSITY

Inventor： Akira HORIBA ,  Koichi TANABE ,  Toshinori YOSHIMUTA ,  Kenji KIMURA ,  Hiroyuki KISHIHARA ,  Yukihisa WADA ,  Takuro IZUMI ,  Taro SHIRAI ,  Takahiro DOKI ,  Satoshi SANO ,  Takayoshi SHIMURA ,  Heiji WATANABE ,  Takuji HOSOI

IPC: G01N23/041 ,  A61B6/00

Abstract: This X-ray phase contrast imaging apparatus (100) includes an X-ray source (1), a first grating (3) that forms a self-image, a second grating (4), a detector (5) that detects X-rays, an adjustment mechanism (6), and a controller (7) that controls the adjustment mechanism (6) to adjust a misalignment of the first grating (3) or a misalignment of the second grating (4) based on Moire fringes detected by the detector (5).

公开(公告)号：US20190056336A1

公开(公告)日：2019-02-21

申请号：US16081249

申请日：2017-02-22

Applicant: SHIMADZU CORPORATION ,  OSAKA UNIVERSITY

Inventor： Takahiro DOKI ,  Koichi TANABE ,  Toshinori YOSHIMUTA ,  Kenji KIMURA ,  Akihiro NISHIMURA ,  Taro SHIRAI ,  Satoshi SANO ,  Akira HORIBA ,  Takayoshi SHIMURA ,  Heiji WATANABE ,  Takuji HOSOI

IPC: G01N23/041 ,  G01N23/20 ,  A61B6/00

Abstract: [PROBLEM TO BE SOLVED] To provide a radiation phase contrast imaging device having a small device configuration[SOLVING MEANS] The present invention focused on the findings that the distance between the phase grating 5 and the FPD 4 does not need to be the Talbot distance. The distance between the phase grating 5 and the FPD 4 can be more freely set. However, a self-image cannot be detected unless the self-image is sufficiently magnified with respect to the phase grating 5. The degree on how much the self-image is magnified on the FPD 4 with respect to the original phase grating 5 is determined by a magnification ratio X2/X1. Therefore, in the present invention, the magnification ratio is set to be the same as the magnification ratio in a conventional configuration. With this, even if the distance X2 between the radiation source 3 and the FPD 4 is reduced, a situation in which the self-image cannot be detected by the FPD 4 due to the excessively small size thereof does not occur.

公开(公告)号：US20140094027A1

公开(公告)日：2014-04-03

申请号：US14044119

申请日：2013-10-02

Applicant: OSAKA UNIVERSITY ,  TOKYO ELECTRON LIMITED

Inventor： Shuji AZUMO ,  Yusaku KASHIWAGI ,  Yuichiro MOROZUMI ,  Yu WAMURA ,  Katsushige HARADA ,  Kosuke TAKAHASHI ,  Heiji WATANABE ,  Takayoshi SHIMURA ,  Takuji HOSOI

IPC: H01L29/40

CPC classification number: H01L29/401 ,  C23C16/303 ,  C23C16/308 ,  H01L21/02178 ,  H01L21/022 ,  H01L21/02252 ,  H01L21/02271 ,  H01L21/0228 ,  H01L21/02326 ,  H01L21/02332 ,  H01L21/044 ,  H01L21/049 ,  H01L21/28264 ,  H01L29/1602 ,  H01L29/1608 ,  H01L29/2003 ,  H01L29/513 ,  H01L29/517 ,  H01L29/518 ,  H01L29/66045 ,  H01L29/66068 ,  H01L29/66712 ,  H01L29/66734 ,  H01L29/7802 ,  H01L29/7813

Abstract: Provided is a method of forming a gate insulating film for use in a MOSFET for a power device. An AlN film is formed on a SiC substrate of a wafer W and then the formation of an AlO film and the formation of an AlN film on the formed AlO film are repeated, thereby forming an AlON film having a laminated structure in which AlO films and AlN films are alternately laminated. A heat treatment is performed on the AlON film having the laminated structure.

Abstract translation: 提供一种形成用于功率器件的MOSFET的栅极绝缘膜的方法。 在晶片W的SiC衬底上形成AlN膜，然后重复形成AlO膜并在AlO膜上形成AlN膜，从而形成具有层叠结构的AlON膜，其中AlO膜和 AlN膜交替层压。 对具有层叠结构的AlON膜进行热处理。

公开(公告)号：US20170271168A1

公开(公告)日：2017-09-21

申请号：US15444905

申请日：2017-02-28

Applicant: OSAKA UNIVERSITY ,  FUJI ELECTRIC CO., LTD.

Inventor： Heiji WATANABE ,  Takayoshi SHIMURA ,  Takuji HOSOI ,  Mitsuru SOMETANI

IPC: H01L21/3105 ,  H01L29/16 ,  H01L21/283 ,  H01L21/02 ,  H01L21/266

CPC classification number: H01L21/3105 ,  H01L21/02378 ,  H01L21/046 ,  H01L21/266 ,  H01L21/283 ,  H01L29/0878 ,  H01L29/0886 ,  H01L29/1095 ,  H01L29/1608 ,  H01L29/66068 ,  H01L29/7802

Abstract: A p-type base region, n+-type source region, p+-type contact region, and n-type JFET region are formed on a front surface side of a silicon carbide base by ion implantation. The front surface of the silicon carbide base is thermally oxidized, forming a thermal oxide film. Activation annealing at a high temperature of 1500 degrees C. or higher is performed with the front surface of the silicon carbide base being covered by the thermal oxide film. The activation annealing is performed in a gas atmosphere that includes oxygen at a partial pressure from 0.01 atm to 1 atm and therefore, the thermal oxide film thickness may be maintained or increased without a decrease thereof. The thermal oxide film is used as a gate insulating film and thereafter, a poly-silicon layer that is to become a gate electrode is deposited on the thermal oxide film, forming a MOS gate structure.

公开(公告)号：US20170069487A1

公开(公告)日：2017-03-09

申请号：US15221153

申请日：2016-07-27

Applicant: OSAKA UNIVERSITY ,  FUJI ELECTRIC CO., LTD.

Inventor： Heiji WATANABE ,  Takayoshi SHIMURA ,  Takuji HOSOI ,  Mitsuru SOMETANI

IPC: H01L21/02 ,  H01L21/04 ,  C23C16/46 ,  C23C16/458 ,  C23C16/52 ,  H01L29/16 ,  C23C16/455

Abstract: A method for manufacturing a semiconductor device includes: thermally-oxidizing a surface of a to-be-processed base made by SiC as body material to form a silicon dioxide film, by supplying gas containing oxidation agent to the surface of the to-be-processed base; exchanging ambient gas containing the oxidation agent after forming the silicon dioxide film, by decreasing a partial pressure of the oxidation agent in the ambient gas to 10 Pa or less; and after exchanging the ambient gas, lowering a temperature of the to-be-processed base.

Abstract translation: 一种制造半导体器件的方法包括：将由SiC制成的待处理基底的表面作为主体材料进行热氧化，以形成二氧化硅膜，通过将待氧化剂的气体供给到待形成的氧化物的表面， 加工基地 在形成二氧化硅膜之后，通过将环境气体中的氧化剂的分压降低到10Pa以下，交换含有氧化剂的环境气体; 并且在更换环境气体之后，降低待处理基底的温度。

公开(公告)号：US20180061954A1

公开(公告)日：2018-03-01

申请号：US15687302

申请日：2017-08-25

Applicant: OSAKA UNIVERSITY

Inventor： Heiji WATANABE ,  Takahiro YAMADA ,  Mikito NOZAKI ,  Takuji HOSOI ,  Takayoshi SHIMURA

IPC: H01L29/40 ,  H01L29/20 ,  H01L21/02 ,  H01L21/285

CPC classification number: H01L29/408 ,  H01L21/02241 ,  H01L21/02389 ,  H01L21/02483 ,  H01L21/0254 ,  H01L21/28008 ,  H01L21/28575 ,  H01L29/2003 ,  H01L29/513 ,  H01L29/517

Abstract: A semiconductor device (100) includes a base layer (10), an interface layer (20), and a deposition layer (30). The base layer (10) includes a nitride semiconductor that contains gallium. The interface layer (20) is adjacent to the base layer (10). The interface layer (20) contains gallium oxide. The deposition layer (30) is adjacent to the interface layer (20). The deposition layer (30) has a wider band gap than the interface layer (20). The interface layer (20) preferably has crystallinity. The interface layer (20) preferably contains α-phase Ga2O3.