公开(公告)号：US11018015B2

公开(公告)日：2021-05-25

申请号：US16225347

申请日：2018-12-19

申请人： SHIN-ETSU CHEMICAL CO., LTD.

发明人： Tsutomu Ogihara ,  Daisuke Kori ,  Seiichiro Tachibana ,  Yusuke Biyajima ,  Naoki Kobayashi ,  Kazumi Noda

IPC分类号： G03F7/075 ,  H01L21/308 ,  G03F7/09 ,  G03F7/38 ,  G03F7/004 ,  G03F7/039 ,  G03F7/40 ,  C08K5/00 ,  C08G16/02

摘要： The invention provides: a composition for forming an organic film, the composition having high filterability and enabling formation of an organic film which has high pattern-curving resistance, and which prevents a high-aspect line pattern particularly finer than 40 nm from line collapse and twisting after dry etching; a method for forming an organic film and a patterning process which use the composition; and a substrate for manufacturing a semiconductor device, including the organic film formed on the substrate. The composition for forming an organic film includes a condensate (A), which is a condensation product of dihydroxynaphthalene shown by the following formula (1) and a condensation agent, or a derivative of the condensate (A). A sulfur content among constituent elements contained in the condensate (A) or the derivative of the condensate (A) is 100 ppm or less in terms of mass.

公开(公告)号：US09372404B2

公开(公告)日：2016-06-21

申请号：US13873685

申请日：2013-04-30

申请人： SHIN-ETSU CHEMICAL CO., LTD.

发明人： Takeru Watanabe ,  Seiichiro Tachibana ,  Toshihiko Fujii ,  Kazumi Noda ,  Toshiharu Yano ,  Takeshi Kinsho

IPC分类号： G03F7/11 ,  H01L21/027 ,  G03F7/09 ,  H01L21/308 ,  H01L21/311

CPC分类号： G03F7/094 ,  H01L21/0271 ,  H01L21/3081 ,  H01L21/31116 ,  H01L21/31138

摘要： The invention provides an organic film composition comprises (A) a heat-decomposable polymer, (B) an organic solvent, and (C) an aromatic ring containing resin, with the weight reduction rate of (A) the heat-decomposable polymer from 30° C. to 250° C. being 40% or more by mass. There can be provided an organic film composition having not only a high dry etching resistance but also an excellent filling-up or flattening characteristics.

摘要翻译： 本发明提供一种有机膜组合物，其包含（A）可热分解的聚合物，（B）有机溶剂和（C）含芳环的树脂，重量减少率为（A）的热分解聚合物的重量比为30 ℃至250℃，为40质量％以上。 可以提供不仅具有高耐干蚀刻性，而且具有优异的填充或平坦化特性的有机膜组合物。

公开(公告)号：US09977330B2

公开(公告)日：2018-05-22

申请号：US14856094

申请日：2015-09-16

申请人： SHIN-ETSU CHEMICAL CO., LTD.

发明人： Seiichiro Tachibana ,  Daisuke Kori ,  Tsutomu Ogihara ,  Takeru Watanabe ,  Kazumi Noda ,  Toshiharu Yano

IPC分类号： G03F7/11 ,  C08F216/10 ,  C08G61/12 ,  C09D129/02 ,  C09D165/00 ,  G03F7/20 ,  G03F7/32 ,  G03F7/40 ,  H01L21/027 ,  G03F7/09 ,  H01L21/308 ,  C07C43/23 ,  G03F7/075 ,  C07C39/17 ,  C08K5/13 ,  C09D7/12 ,  H01L21/02 ,  H01L27/12 ,  H01L21/311

CPC分类号： G03F7/094 ,  C07C39/17 ,  C07C43/23 ,  C07C2603/18 ,  C08F216/10 ,  C08G61/12 ,  C08K5/13 ,  C09D7/63 ,  C09D129/02 ,  C09D165/00 ,  G03F7/0752 ,  G03F7/091 ,  G03F7/11 ,  G03F7/20 ,  G03F7/32 ,  G03F7/40 ,  H01L21/02118 ,  H01L21/0214 ,  H01L21/02164 ,  H01L21/0217 ,  H01L21/02271 ,  H01L21/0228 ,  H01L21/02318 ,  H01L21/0271 ,  H01L21/0274 ,  H01L21/0276 ,  H01L21/308 ,  H01L21/3081 ,  H01L21/3086 ,  H01L21/31138 ,  H01L21/31144 ,  H01L27/1203

摘要： The invention provides a compound for forming an organic film having a partial structure represented by the following formula (vii-2), wherein R1 represents a linear, branched or cyclic monovalent hydrocarbon group having 1 to 20 carbon atoms, and a methylene group constituting R1 may be substituted by an oxygen atom; a+b is 1, 2 or 3; c and d are each independently 0, 1 or 2; x represents 0 or 1, when x=0, then a=c=0; L7 represents a linear, branched or cyclic divalent organic group having 1 to 20 carbon atoms, L8′ represents the partial structure represented by the following formula (i), 0≤o

公开(公告)号：US09728420B2

公开(公告)日：2017-08-08

申请号：US15091336

申请日：2016-04-05

申请人： SHIN-ETSU CHEMICAL CO., LTD.

发明人： Daisuke Kori ,  Kazumi Noda ,  Kazunori Maeda ,  Rie Kikuchi ,  Tsutomu Ogihara

IPC分类号： H01L21/31 ,  C07C219/32 ,  G03F7/11 ,  C07C69/94 ,  C07C317/22 ,  C07C69/84 ,  H01L21/32 ,  H01L21/324 ,  H01L21/3105 ,  H01L21/311 ,  C07C69/33 ,  C07C69/76 ,  C07C219/14 ,  G03F7/09

CPC分类号： H01L21/31 ,  C07C69/33 ,  C07C69/76 ,  C07C69/84 ,  C07C69/94 ,  C07C219/14 ,  C07C317/22 ,  C07C2603/18 ,  C07C2603/24 ,  G03F7/091 ,  G03F7/094 ,  H01L21/0332 ,  H01L21/31056 ,  H01L21/31058 ,  H01L21/31116 ,  H01L21/31138 ,  H01L21/31144 ,  H01L21/32 ,  H01L21/324

摘要： An organic film composition including a compound represented by the following general formula (1), wherein n1 and n2 each independently represent 0 or 1; “W” represents a single bond or any of structures represented by the following formula (2); R1 represents any of structures represented by the following general formula (3); m1 and m2 each independently represent an integer of 0 to 7, with the proviso that m1+m2 is 1 to 14. There can be provided an organic film composition for forming an organic film having dry etching resistance as well as advanced filling/planarizing characteristics.

公开(公告)号：US10007183B2

公开(公告)日：2018-06-26

申请号：US14856014

申请日：2015-09-16

申请人： SHIN-ETSU CHEMICAL CO., LTD.

发明人： Seiichiro Tachibana ,  Daisuke Kori ,  Tsutomu Ogihara ,  Takeru Watanabe ,  Kazumi Noda ,  Toshiharu Yano

IPC分类号： G03F7/11 ,  G03F7/40 ,  G03F7/09 ,  H01L21/308 ,  C07C43/23 ,  G03F7/075 ,  C08F216/10 ,  C08G61/12 ,  C09D129/02 ,  C09D165/00 ,  G03F7/20 ,  G03F7/32 ,  C07C39/17 ,  C08K5/13 ,  H01L21/02 ,  H01L27/12 ,  H01L21/311 ,  H01L21/027

CPC分类号： G03F7/094 ,  C07C39/17 ,  C07C43/23 ,  C07C2603/18 ,  C08F216/10 ,  C08G61/12 ,  C08K5/13 ,  C09D7/63 ,  C09D129/02 ,  C09D165/00 ,  G03F7/0752 ,  G03F7/091 ,  G03F7/11 ,  G03F7/20 ,  G03F7/32 ,  G03F7/40 ,  H01L21/02118 ,  H01L21/0214 ,  H01L21/02164 ,  H01L21/0217 ,  H01L21/02271 ,  H01L21/0228 ,  H01L21/02318 ,  H01L21/0271 ,  H01L21/0274 ,  H01L21/0276 ,  H01L21/308 ,  H01L21/3081 ,  H01L21/3086 ,  H01L21/31138 ,  H01L21/31144 ,  H01L27/1203

摘要： The invention provides a compound for forming an organic film having a partial structure represented by the following formula (ii), wherein the ring structures Ar1, Ar2 and Ar3 each represent a substituted or unsubstituted benzene ring or naphthalene ring; e is 0 or 1; R0 represents a hydrogen atom or a linear, branched or cyclic monovalent organic group having 1 to 30 carbon atoms; L0 represents a linear, branched or cyclic divalent organic group having 1 to 32 carbon atoms; and the methylene group constituting L0 may be substituted by an oxygen atom or a carbonyl group. There can be provided an organic film composition for forming an organic film having high dry etching resistance as well as advanced filling/planarizing characteristics.

公开(公告)号：US09261788B2

公开(公告)日：2016-02-16

申请号：US13916071

申请日：2013-06-12

申请人： SHIN-ETSU CHEMICAL CO., LTD.

发明人： Seiichiro Tachibana ,  Daisuke Kori ,  Tsutomu Ogihara ,  Takeru Watanabe ,  Kazumi Noda ,  Toshiharu Yano

IPC分类号： G03F7/11 ,  C07C43/23 ,  G03F7/09 ,  H01L21/308 ,  G03F7/075 ,  H01L27/12 ,  H01L21/311 ,  H01L21/027

CPC分类号： G03F7/094 ,  C07C39/17 ,  C07C43/23 ,  C07C2603/18 ,  C08F216/10 ,  C08G61/12 ,  C08K5/13 ,  C09D7/63 ,  C09D129/02 ,  C09D165/00 ,  G03F7/0752 ,  G03F7/091 ,  G03F7/11 ,  G03F7/20 ,  G03F7/32 ,  G03F7/40 ,  H01L21/02118 ,  H01L21/0214 ,  H01L21/02164 ,  H01L21/0217 ,  H01L21/02271 ,  H01L21/0228 ,  H01L21/02318 ,  H01L21/0271 ,  H01L21/0274 ,  H01L21/0276 ,  H01L21/308 ,  H01L21/3081 ,  H01L21/3086 ,  H01L21/31138 ,  H01L21/31144 ,  H01L27/1203

摘要： The invention provides a compound for forming an organic film having a partial structure represented by the following formula (i) or (ii), wherein the ring structures Ar1, Ar2 and Ar3 each represent a substituted or unsubstituted benzene ring or naphthalene ring; e is 0 or 1; R0 represents a hydrogen atom or a linear, branched or cyclic monovalent organic group having 1 to 30 carbon atoms; L0 represents a linear, branched or cyclic divalent organic group having 1 to 32 carbon atoms; and the methylene group constituting L0 may be substituted by an oxygen atom or a carbonyl group. There can be provided an organic film composition for forming an organic film having high dry etching resistance as well as advanced filling/planarizing characteristics.

摘要翻译： 本发明提供一种形成具有由下式（i）或（ii）表示的部分结构的有机膜的化合物，其中环结构Ar1，Ar2和Ar3各自表示取代或未取代的苯环或萘环; e为0或1; R 0表示氢原子或碳原子数为1〜30的直链状，支链状或环状的一价有机基团， L0表示碳原子数为1〜32的直链状，支链状或环状的二价有机基团， 构成L0的亚甲基可以被氧原子或羰基取代。 可以提供一种用于形成具有高耐干蚀刻性以及高级填充/平坦化特性的有机膜的有机膜组合物。

公开(公告)号：US09046764B2

公开(公告)日：2015-06-02

申请号：US13712627

申请日：2012-12-12

申请人： SHIN-ETSU CHEMICAL CO., LTD.

发明人： Seiichiro Tachibana ,  Daisuke Kori ,  Tsutomu Ogihara ,  Kazumi Noda ,  Takeshi Kinsho

IPC分类号： G03F7/09 ,  G03F7/11 ,  G03F7/40 ,  G03F7/004 ,  G03F7/075

CPC分类号： G03F7/004 ,  G03F7/0752 ,  G03F7/11 ,  G03F7/40

摘要： A resist underlayer film composition, wherein the composition contains a polymer obtained by condensation of a condensed body, the body being obtained by condensation of one or more kinds of a compound shown by the following general formula (1-1) with one or more kinds of a compound shown by the following general formula (2-3) and an equivalent body thereof, with one or more kinds of a compound shown by the following general formula (2-1), a compound shown by the following general formula (2-2), and an equivalent body thereof; a method for producing a polymer for a resist underlayer film; and a patterning process using the same.

摘要翻译： 一种抗蚀剂下层膜组合物，其中，所述组合物含有通过缩合缩合得到的聚合物，所述聚合物通过一种或多种下述通式（1-1）所示的化合物与一种或多种 由下述通式（2-3）表示的化合物及其等同物，与下述通式（2-1）所示的化合物或一种以上通式（2-1）所示的化合物 -2）及其等同物; 一种抗蚀剂下层膜用聚合物的制造方法， 以及使用其的图案化处理。