Abstract:
Device for crucible-free zone melting a crystalline rod substantially vertically supported at the ends thereof in a zone melting chamber includes heating means extending into the chamber through a substantially vertical slot formed in a side wall of the chamber. Slide means located adjacent the side wall carries the heating means and is slidable therewith relative to the rod axis. Elastically deformable sealing means are mounted between the sliding surface of the slide means and the side wall and completely surround the slot so as to seal it gas-tightly. The slide means, at least at the sliding surface thereof, are formed of a material of good slidability, the sealing means are formed of a material effecting a dry seal with the sliding surfaces, the paired materials having a frictional coefficient of at most 0.2.
Abstract:
Apparatus for crucible-free zone melting a crystalline rod comprising a melting zone chamber having a substantially horizontal wall formed with an opening therein, a slide member adjacent the horizontal wall outside of the chamber for sealingly covering the opening, a pair of spaced holders mounted in the chamber for vertically end supporting a crystalline rod between them, means for relatively displacing the end holders toward one another, an annular heating device surrounding and spaced from the rod and adapted to form a molten zone in the rod wherefrom a portion of the rod recrystallizes, means for displacing the slide member and the rod holder for the recrystallizing rod portion in a substantially horizontal direction transverse to the axis of the rod, and means for rotating at least the rod holder for the recrystallizing rod portion comprising a drive shaft extending vacuum-tightly through an opening in the slide member and the opening in the wall and connected to the rotatable holder in the chamber.
Abstract:
A PAIR OF DC MOTORS ARE COUPLED TO A SHAFT VIA A DIFFERENTIAL DRIVE. ONE OF THE MOTORS IS ENERGIZED VIA A FIRST MOTOR ENERGIZING CIRCUIT WHICH INCLUDES A FIRST SWITCH. THE OTHER OF THE MOTORS IS ENERGIZED VIA A SECOND MOTOR ENERGIZING CIRCUIT WHICH INCLUDES A SECOND SWITCH. CONTROL CIRCUITRY CONNECTED TO THE FIRST AND SECOND SWITCHES CONTROLS THEIR CONDITION IN ACCORDANCE WITH A CONTROL VOLTAGE PROVIDED BY THE CONTROL CIRCUITRY.
Abstract:
Apparatus for indiffusing dopant into a semiconductor material. The apparatus comprises a heatable tube of the same semiconductor material, the wall of which is from 0.5 to 20 mm thick and is gas-tight under reaction conditions. Heating means include an induction coil spaced from the heatable tube and a relatively narrow graphite ring fixed about the tube to accelerate such heating.
Abstract:
IN DEVICE FOR FLOATING ZONE MELTING A CRYSTALLINE ROD INCLUDING A REMOVABLE HOLDER MOUNTED ON THE END OF A SUBSTANTIALLY VERTICAL HOLDER SHAFT FOR END-SUPPORTING A SUBSTANTIALLY VERTICAL CRYSTALLINE ROD COAXIAL TO THE HOLDER
SHAFT, THE IMPROVEMENT THEREIN COMPRISING SEPARATE MEANS FOR RESPECTIVELY PREVENTING RADIAL DISPLACEMENT OF THE END HOLDER AND ANGULAR DEVIATION THEREOF RELATIVE TO THE SHAFT.
Abstract:
APPARATUS FOR REFINING A ROD ACCORDING TO THE FLOATINGZONE MELTING TECHNIQUE INCLUDES ROTARY SHAFT MEANS ADAPTED TO CARRY AND ROTATE A ROD DURING SUBJECTION THEREOF TO THE FLOATING-ZONE MELTING TECHNIQUE, PLAY-FREE WORMDRIVE MEANS OPERATIVELY CONNECTED TO THE ROTARY SHAFT MEANS FOR ROTATING THE LATTER, CARRIAGE MEANS CARRYING THE ROTARY SHAFT MEANS, BALL-BEARING GUIDE MEANS GUIDING THE CARRIAGE MEANS FOR MOVEMENT, AND ROTARY BALL-BEARING SPINDLE MEANS OPERATIVELY CONNECTED TO THE CARRIAGE MEANS FOR DISPLACING THE LATTER, SO THAT THE ROD IS MAINTAINED FREE OF MECHANICAL VIBRATIONS DURING TREATMENT OF THE ROD ACCORDING TO THE FLOATING-ZONE MELTING TECHNIQUE.
Abstract:
907,569. Photo-electric devices. SIEMENSSCHUCKERTWERKE A.G. Feb. 20, 1959 [Feb. 22, 1958], No. 5975/59. Class 37. In a photo-cell comprising a semi-conductor body with at least one PN junction, part of the surface of the body forms part of the outer surface of a sealed housing enclosing the regions where the PN junctions come to the surface of the body. An NPN type photo-transistor (Fig. 1) is made by allowing foils of gold-antimony alloy to opposed surfaces of a P-type silicon wafer. The central part of one of the alloyed foils is then removed to leave a recrystallized N-type surface layer with an annular alloy electrode 3. Alternatively the whole of the foil is removed and an annular electrode 3 provided. The electrodes 3, 4 of the resulting device are soldered or alloyed to areas of molybdenum or tungsten members 5, 9, plated with gold-antimony alloy. The housing is completed by a metallized ceramic cylinder 6 soldered between member 5 and a resilient copper diaphragm 7 formed integral with a mounting bolt 10, and a cooling block 8 on which member 9 is mounted. In another embodiment (Fig. 2) sensitive to local variations in light intensity within its exposed surface there are three collector-electrodes 13 which may be connected into independent circuits by wires 14 sealed through glass beads in wall 7 of an all-metal casing.