公开(公告)号：US09543393B2

公开(公告)日：2017-01-10

申请号：US13834871

申请日：2013-03-15

申请人： SixPoint Materials, Inc. ,  Seoul Semiconductor Co., Ltd.

发明人： Tadao Hashimoto ,  Edward Letts ,  Sierra Hoff

IPC分类号： H01L29/201 ,  H01L29/20 ,  C30B7/10 ,  C30B29/40 ,  C30B33/10 ,  H01L21/02 ,  C30B33/00

CPC分类号： H01L29/201 ,  C30B7/105 ,  C30B29/403 ,  C30B29/406 ,  C30B33/00 ,  C30B33/10 ,  H01L21/02013 ,  H01L21/02019 ,  H01L29/2003

摘要： The present invention discloses a group III nitride wafer such as GaN, AlN, InN and their alloys having one surface visually distinguishable from the other surface. After slicing of the wafer from a bulk crystal of group III nitride with a mechanical method such as multiple wire saw, the wafer is chemically etched so that one surface of the wafer is visually distinguishable from the other surface. The present invention also discloses a method of producing such wafers.

摘要翻译： 本发明公开了一种III族氮化物晶片，例如GaN，AlN，InN及其合金，其一面在视觉上与其他表面不同。 在用诸如多线锯的机械方法从III族氮化物的块状晶体切片晶片之后，晶片被化学蚀刻，使得晶片的一个表面在视觉上与另一表面区分开。 本发明还公开了一种制造这种晶片的方法。

公开(公告)号：US09435051B2

公开(公告)日：2016-09-06

申请号：US14981292

申请日：2015-12-28

申请人： SIXPOINT MATERIALS, INC. ,  SEOUL SEMICONDUCTOR CO., LTD.

发明人： Tadao Hashimoto ,  Edward Letts ,  Sierra Hoff

IPC分类号： C30B7/10 ,  B24B37/04 ,  B28D5/00 ,  C30B29/40 ,  H01L21/02 ,  H01L29/20 ,  H01L29/207 ,  H01L29/22 ,  C30B9/00 ,  C30B28/04

CPC分类号： C30B7/105 ,  B24B37/042 ,  B28D5/00 ,  C30B9/00 ,  C30B28/04 ,  C30B29/403 ,  H01L21/02013 ,  H01L21/02389 ,  H01L29/2003 ,  H01L29/207 ,  H01L29/22

摘要： The present invention discloses a semi-insulating wafer of GaxAlyIn1-x-yN (0≦x≦1, 0≦x+y≦1) which is doped with bismuth (Bi). The semi-insulating wafer has the resistivity of 104 ohm-cm or more. Although it is very difficult to obtain a single crystal ingot of group III nitride, the ammonothermal method can grow highly-oriented poly or single crystal ingot of group III nitride having the density of dislocations/grain boundaries less than 105 cm−2. The invention also disclose the method of fabricating the semi-insulating group III nitride bulk crystals and wafers.

摘要翻译： 本发明公开了掺杂有铋（Bi）的GaxAlyIn1-x-yN（0≤x≤1,0≤x+y≤1）的半绝缘晶片。 半绝缘晶片的电阻率为104ohm-cm以上。 尽管获得III族氮化物的单晶锭是非常困难的，但是该方法可以生长具有位错密度/晶界小于105cm -2的III族氮化物的高取向聚晶或单晶锭。 本发明还公开了制造半绝缘III族氮化物块状晶体和晶片的方法。

公开(公告)号：US20150203991A1

公开(公告)日：2015-07-23

申请号：US14598982

申请日：2015-01-16

申请人： SIXPOINT MATERIALS, INC. ,  SEOUL SEMICONDUCTOR CO., LTD.

发明人： Tadao Hashimoto ,  Edward Letts

IPC分类号： C30B29/40 ,  C30B7/10

CPC分类号： C30B29/403 ,  C30B7/105

摘要： Bulk crystal of group III nitride having thickness greater than 1 mm with improved crystal quality, reduced lattice bowing and/or reduced crack density and methods of making. Bulk crystal has a seed crystal, a first crystalline portion grown on the first side of the seed crystal and a second crystalline portion grown on the second side of the seed crystal. Either or both crystalline portions have an electron concentration and/or an oxygen concentration similar to the seed crystal.The bulk crystal can have an additional seed crystal, with common faces (e.g. same polarity, same crystal plane) of seed crystals joined so that a first crystalline part grows on the first face of the first seed crystal and a second crystalline part grows on the first face of the second seed crystal. Each crystalline part's electron concentration and/or oxygen concentration may be similar to its corresponding seed crystal.

摘要翻译： 具有大于1mm厚度的III族氮化物的体晶，具有改善的晶体质量，减少晶格弯曲和/或降低的裂纹密度和制备方法。 散装晶体具有晶种，在晶种的第一侧生长的第一晶体部分和在籽晶的第二面上生长的第二晶体部分。 结晶部分之一或两者具有类似于晶种的电子浓度和/或氧浓度。 本体晶体可以具有另外的晶种，其中接合晶种的共同面（例如相同的极性，相同的晶面），使得第一晶体部分在第一晶种的第一面上生长，并且第二晶体部分在 第二个晶种的第一面。 每个结晶部分的电子浓度和/或氧浓度可以与其相应的晶种相似。

公开(公告)号：US09909230B2

公开(公告)日：2018-03-06

申请号：US15004464

申请日：2016-01-22

申请人： SixPoint Materials, Inc. ,  SEOUL SEMICONDUCTOR CO., LTD.

发明人： Tadao Hashimoto ,  Edward Letts ,  Daryl Key

IPC分类号： C30B7/10 ,  C30B29/40 ,  G01N23/207

CPC分类号： C30B7/105 ,  C30B29/406 ,  G01N23/207 ,  G01N2223/602

摘要： In one instance, the invention provides a method of growing bulk crystal of group III nitride using a seed crystal selected by (a) measuring x-ray rocking curves of a seed crystal at more than one point, (b) quantifying the peak widths of the measured x-ray rocking curves, and (c) evaluating the distribution of the quantified peak widths. The invention also includes the method of selecting a seed crystal for growing bulk crystal of group III nitride.The bulk crystal of group III nitride can be grown in supercritical ammonia or a melt of group III metal using at least one seed selected by the method above.

公开(公告)号：US09790617B2

公开(公告)日：2017-10-17

申请号：US14720819

申请日：2015-05-24

申请人： SIXPOINT MATERIALS, INC. ,  SEOUL SEMICONDUCTOR CO., LTD.

发明人： Tadao Hashimoto ,  Edward Letts

IPC分类号： C30B29/56 ,  C30B23/02 ,  C30B7/10 ,  H01L29/20 ,  H01L29/32 ,  C30B23/06 ,  C30B25/20 ,  C30B29/66 ,  C30B29/64 ,  C30B9/10 ,  C30B29/40

CPC分类号： C30B23/025 ,  C30B7/105 ,  C30B9/10 ,  C30B23/066 ,  C30B25/20 ,  C30B29/403 ,  C30B29/64 ,  C30B29/66 ,  H01L29/2003 ,  H01L29/32

摘要： In one instance, the invention provides a bulk crystal of group III nitride having a thickness of more than 1 mm without cracking above the sides of a seed crystal. This bulk group III nitride crystal is expressed as Gax1Aly1In1-x1-y1N (0≦x1≦1, 0≦x1+y1≦1) and the seed crystal is expressed as Gax2Aly2In1-x2-y2N (0≦x2≦1, 0≦x2+y2≦1). The bulk crystal of group III nitride can be grown in supercritical ammonia or a melt of group III metal using at least one seed crystal having basal planes of c-orientation and sidewalls of m-orientation. By exposing only c-planes and m-planes in this instance, cracks originating from the sides of the seed crystal are avoided.

公开(公告)号：US09518340B2

公开(公告)日：2016-12-13

申请号：US13833443

申请日：2013-03-15

申请人： SixPoint Materials, Inc. ,  Seoul Semiconductor Co., Ltd.

发明人： Tadao Hashimoto ,  Edward Letts ,  Sierra Hoff

IPC分类号： H01L21/02 ,  C30B29/40 ,  H01L29/20 ,  C30B7/10 ,  B28D5/04 ,  C30B29/64 ,  C30B25/20 ,  H01L29/04 ,  H01L29/32

CPC分类号： C30B29/406 ,  B28D5/045 ,  C30B7/10 ,  C30B7/105 ,  C30B25/20 ,  C30B29/403 ,  C30B29/64 ,  H01L21/02389 ,  H01L21/0254 ,  H01L21/02628 ,  H01L29/045 ,  H01L29/2003 ,  H01L29/32 ,  Y10S117/902 ,  Y10T428/192

摘要： The present invention provides a method of growing an ingot of group III nitride. Group III nitride crystals such as GaN are grown by the ammonothermal method on both sides of a seed to form an ingot and the ingot is sliced into wafers. The wafer including the first-generation seed is sliced thicker than the other wafers so that the wafer including the first-generation seed does not break. The wafer including the first-generation seed crystal can be used as a seed for the next ammonothermal growth.

公开(公告)号：US09255342B2

公开(公告)日：2016-02-09

申请号：US13781543

申请日：2013-02-28

申请人： SIXPOINT MATERIALS, INC. ,  Seoul Semiconductor Co., Ltd.

发明人： Tadao Hashimoto ,  Edward Letts ,  Sierra Hoff

IPC分类号： C30B7/10 ,  B28D5/00 ,  H01L21/02 ,  H01L29/20 ,  H01L29/22 ,  C30B9/00 ,  C30B28/04 ,  C30B29/40

CPC分类号： C30B7/105 ,  B24B37/042 ,  B28D5/00 ,  C30B9/00 ,  C30B28/04 ,  C30B29/403 ,  H01L21/02013 ,  H01L21/02389 ,  H01L29/2003 ,  H01L29/207 ,  H01L29/22

摘要： The present invention discloses a semi-insulating wafer of GaxAlyIn1-x-yN (0≦x≦1, 0≦x+y≦1) which is doped with bismuth (Bi). The semi-insulating wafer has the resistivity of 104 ohm-cm or more. Although it is very difficult to obtain a single crystal ingot of group III nitride, the ammonothermal method can grow highly-oriented poly or single crystal ingot of group III nitride having the density of dislocations/grain boundaries less than 105 cm−2. The invention also disclose the method of fabricating the semi-insulating group III nitride bulk crystals and wafers.

摘要翻译： 本发明公开了掺杂有铋（Bi）的GaxAlyIn1-x-yN（0＆nlE; x＆nlE; 1,0＆amp; nlE; x + y＆nlE; 1）的半绝缘晶片。 半绝缘晶片的电阻率为104ohm-cm以上。 尽管获得III族氮化物的单晶锭是非常困难的，但是该方法可以生长具有位错密度/晶界小于105cm -2的III族氮化物的高取向聚晶或单晶锭。 本发明还公开了制造半绝缘III族氮化物块状晶体和晶片的方法。

公开(公告)号：US20140065796A1

公开(公告)日：2014-03-06

申请号：US13835636

申请日：2013-03-15

申请人： Seoul Semiconductor Co., Ltd. ,  SixPoint Materials, Inc.

发明人： Tadao Hashimoto ,  Edward Letts ,  Sierra Hoff

IPC分类号： H01L29/20

CPC分类号： H01L29/201 ,  C30B7/105 ,  C30B29/403 ,  C30B29/406 ,  C30B33/00 ,  C30B33/10 ,  H01L21/02013 ,  H01L21/02019 ,  H01L29/2003

摘要： The present invention discloses a group III nitride wafer such as GaN, AlN, InN and their alloys having one surface visually distinguishable from the other surface. After slicing of the wafer from a bulk crystal of group III nitride with a mechanical method such as multiple wire saw, the wafer is chemically etched so that one surface of the wafer is visually distinguishable from the other surface. The present invention also discloses a method of producing such wafers.

公开(公告)号：US10316431B2

公开(公告)日：2019-06-11

申请号：US14918474

申请日：2015-10-20

申请人： SIXPOINT MATERIALS, INC. ,  SEOUL SEMICONDUCTOR CO., LTD.

发明人： Tadao Hashimoto ,  Edward Letts ,  Sierra Hoff

IPC分类号： C30B29/40 ,  H01L29/20 ,  C30B7/10 ,  B28D5/04 ,  H01L21/02 ,  C30B29/64 ,  C30B25/20 ,  H01L29/04 ,  H01L29/32 ,  C30B33/06

摘要： The present invention provides a method of growing an ingot of group III nitride. Group III nitride crystals such as GaN are grown by the ammonothermal method on both sides of a seed to form an ingot and the ingot is sliced into wafers. The wafer including the first-generation seed is sliced thicker than the other wafers so that the wafer including the first-generation seed does not break. The wafer including the first-generation seed crystal can be used as a seed for the next ammonothermal growth.

公开(公告)号：US10161059B2

公开(公告)日：2018-12-25

申请号：US14720815

申请日：2015-05-24

申请人： SIXPOINT MATERIALS, INC. ,  SEOUL SEMICONDUCTOR CO., LTD.

发明人： Tadao Hashimoto ,  Edward Letts

IPC分类号： C30B25/02 ,  C30B23/02 ,  C30B7/10 ,  H01L29/20 ,  H01L29/32 ,  C30B23/06 ,  C30B25/20 ,  C30B29/66 ,  C30B29/64 ,  C30B9/10 ,  C30B29/40

摘要： In one instance, the invention provides a bulk crystal of group III nitride having a thickness of more than 1 mm without cracking above the sides of a seed crystal. This bulk group III nitride crystal is expressed as Gax1Aly1In1-x1-y1N (0≤x1≤1, 0≤x1+y1≤1) and the seed crystal is expressed as Gax2Aly2In1-x2-y2N (0≤x2≤1, 0≤x2+y2≤1). The bulk crystal of group III nitride can be grown in supercritical ammonia or a melt of group III metal using at least one seed crystal having basal planes of c-orientation and sidewalls of m-orientation. By exposing only c-planes and m-planes in this instance, cracks originating from the sides of the seed crystal are avoided.