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    LASER DIODE DEVICE AND METHOD OF MANUFACTURING LASER DIODE DEVICE
    1.
    发明申请
    LASER DIODE DEVICE AND METHOD OF MANUFACTURING LASER DIODE DEVICE 审中-公开
    激光二极管器件及制造激光二极管器件的方法

    公开(公告)号：US20150050768A1

    公开(公告)日：2015-02-19

    申请号：US14498275

    申请日：2014-09-26

    Applicant: Sony Corporation ,  Sumitomo Electric Industries, Ltd.

    Inventor： Noriyuki FUTAGAWA ,  Hiroshi NAKAJIMA ,  Katsunori YANASHIMA ,  Takashi KYONO ,  Masahiro ADACHI

    IPC: H01S5/22 ,  H01S5/32 ,  H01S5/042

    CPC classification number: H01S5/2206 ,  B82Y20/00 ,  H01S5/0425 ,  H01S5/2009 ,  H01S5/22 ,  H01S5/3202 ,  H01S5/34333 ,  H01S2301/176

    Abstract: A laser diode device includes: a semiconductor substrate including a semi-polar surface, the semiconductor substrate being formed of a hexagonal III-nitride semiconductor; an epitaxial layer including a light emitting layer, the epitaxial layer being formed on the semi-polar surface of the semiconductor substrate, and the epitaxial layer including a ridge section; a first electrode formed on a top surface of the ridge section; an insulating layer covering the epitaxial layer in an adjacent region of the ridge section and a side surface of the ridge section, the insulating layer covering part or all of side surfaces of the first electrode continuously from the epitaxial layer; a pad electrode formed to cover a top surface of the first electrode and the insulating layer, the pad electrode being electrically connected to the first electrode; and a second electrode formed on a surface, of the semiconductor substrate, opposite to the semi-polar surface.

    Abstract translation: 激光二极管装置包括：包括半极性表面的半导体衬底，所述半导体衬底由六边形III族氮化物半导体形成; 包括发光层的外延层，所述外延层形成在所述半导体衬底的半极性表面上，所述外延层包括脊部; 形成在所述脊部的上表面上的第一电极; 覆盖所述脊部的相邻区域中的所述外延层的绝缘层和所述脊部的侧面，所述绝缘层从所述外延层连续地覆盖所述第一电极的一部分或全部所述侧面; 形成为覆盖所述第一电极和所述绝缘层的顶表面的焊盘电极，所述焊盘电极与所述第一电极电连接; 以及形成在所述半导体衬底的与所述半极性表面相对的表面上的第二电极。

    LIGHT-EMITTING ELEMENT AND METHOD OF MANUFACTURING THE SAME
    3.
    发明申请
    LIGHT-EMITTING ELEMENT AND METHOD OF MANUFACTURING THE SAME 有权

    公开(公告)号：US20230055932A1

    公开(公告)日：2023-02-23

    申请号：US17975219

    申请日：2022-10-27

    Applicant: Sony Corporation

    Inventor： Susumu SATO ,  Tatsushi HAMAGUCHI ,  Shoichiro IZUMI ,  Noriyuki FUTAGAWA ,  Masamichi ITO ,  Jugo MITOMO ,  Hiroshi NAKAJIMA

    IPC: H01S5/183 ,  H01S5/343

    Abstract: A light-emitting element includes: a laminated structure body 20 which is formed from a GaN-based compound semiconductor and in which a first compound semiconductor layer 21 including a first surface 21a and a second surface 21b that is opposed to the first surface 21a, an active layer 23 that faces the second surface 21b of the first compound semiconductor layer 21, and a second compound semiconductor layer 22 including a first surface 22a that faces the active layer 23 and a second surface 22b that is opposed to the first surface 22a are laminated; a first light reflection layer 41 that is provided on the first surface 21a side of the first compound semiconductor layer 21; and a second light reflection layer 42 that is provided on the second surface 22b side of the second compound semiconductor layer 22. The first light reflection layer 41 includes a concave mirror portion 43, and the second light reflection layer 42 has a flat shape.

    LIGHT-EMITTING ELEMENT AND METHOD OF MANUFACTURING THE SAME
    4.
    发明申请
    LIGHT-EMITTING ELEMENT AND METHOD OF MANUFACTURING THE SAME 有权

    公开(公告)号：US20210104870A1

    公开(公告)日：2021-04-08

    申请号：US17127383

    申请日：2020-12-18

    Applicant: Sony Corporation

    Inventor： Susumu SATO ,  Tatsushi HAMAGUCHI ,  Shoichiro IZUMI ,  Noriyuki FUTAGAWA ,  Masamichi ITO ,  Jugo MITOMO ,  Hiroshi NAKAJIMA

    IPC: H01S5/183 ,  H01S5/343

    Abstract: A light-emitting element includes: a laminated structure body 20 which is formed from a GaN-based compound semiconductor and in which a first compound semiconductor layer 21 including a first surface 21a and a second surface 21b that is opposed to the first surface 21a, an active layer 23 that faces the second surface 21b of the first compound semiconductor layer 21, and a second compound semiconductor layer 22 including a first surface 22a that faces the active layer 23 and a second surface 22b that is opposed to the first surface 22a are laminated; a first light reflection layer 41 that is provided on the first surface 21a side of the first compound semiconductor layer 21; and a second light reflection layer 42 that is provided on the second surface 22b side of the second compound semiconductor layer 22. The first light reflection layer 41 includes a concave mirror portion 43, and the second light reflection layer 42 has a flat shape.

    LIGHT EMITTING ELEMENT
    5.
    发明申请
    LIGHT EMITTING ELEMENT 审中-公开

    公开(公告)号：US20190157842A1

    公开(公告)日：2019-05-23

    申请号：US16259226

    申请日：2019-01-28

    Applicant: Sony Corporation

    Inventor： Tatsushi HAMAGUCHI ,  Noriyuki FUTAGAWA ,  Shoichiro IZUMI ,  Masaru KURAMOTO

    IPC: H01S5/183 ,  H01S5/40 ,  H01S5/42 ,  H01S5/10 ,  H01S5/32

    Abstract: A light emitting element includes at least a first light reflecting layer formed on a surface of a substrate, a laminated structural body made of a first compound semiconductor layer, an active layer and a second compound semiconductor layer formed on the first light reflecting layer, and a second electrode and a second light reflecting layer formed on the second compound semiconductor layer, the laminated structural body is configured from a plurality of laminated structural body units, a light emitting element unit is configured from each of the laminated structural body units, and a resonator length in the light emitting element unit is different in every light emitting element unit.

    NITRIDE SEMICONDUCTOR LIGHT EMITTING DEVICE
    7.
    发明申请
    NITRIDE SEMICONDUCTOR LIGHT EMITTING DEVICE 有权
    氮化物半导体发光器件

    公开(公告)号：US20130142210A1

    公开(公告)日：2013-06-06

    申请号：US13658239

    申请日：2012-10-23

    Applicant: SUMITOMO ELECTRIC INDUSTRIES, LTD. ,  SONY CORPORATION

    Inventor： Takashi KYONO ,  Yohei ENYA ,  Masaki UENO ,  Katsunori YANASHIMA ,  Kunihiko TASAI ,  Hiroshi NAKAJIMA ,  Noriyuki FUTAGAWA

    IPC: H01S5/30

    CPC classification number: H01S5/3013 ,  B82Y20/00 ,  H01S5/2009 ,  H01S5/2031 ,  H01S5/22 ,  H01S5/3063 ,  H01S5/3202 ,  H01S5/3213 ,  H01S5/3215 ,  H01S5/3403 ,  H01S5/3407 ,  H01S5/34333

    Abstract: A nitride semiconductor light-emitting device has a semiconductor ridge, and includes a first inner-layer between an active layer and an n-type cladding and a second inner-semiconductor layer between the active layer and a p-type cladding. The first inner-layer, active layer and second inner-layer constitute a core-region. The n-type cladding, core-region and p-type cladding constitute a waveguide-structure. The active layer and the first inner-layer constitute a first heterojunction inclined at an angle greater than zero with respect to a reference plane of the c-plane of the nitride semiconductor of the n-type cladding. Piezoelectric polarization of the well layer is oriented in a direction from the p-type cladding toward the n-type cladding. The second inner-layer and InGaN well layer constitute a second heterojunction. A distance between the ridge bottom and the second heterojunction is 200 nm or less. The ridge includes a third heterojunction between the second inner-layer and the p-type cladding.

    Abstract translation: 氮化物半导体发光器件具有半导体脊，并且包括在有源层和n型包层之间的第一内层和在有源层和p型包层之间的第二内部半导体层。 第一内层，活性层和第二内层构成核心区域。 n型包层，芯区和p型包层构成波导结构。 有源层和第一内层构成相对于n型包层的氮化物半导体的c面的参考平面以大于零的角度倾斜的第一异质结。 阱层的压电极化在从p型包层朝向n型包层的方向上取向。 第二内层和InGaN阱层构成第二异质结。 脊底与第二异质结之间的距离为200nm以下。 脊包括在第二内层和p型包层之间的第三异质结。

    SURFACE-EMITTING LASER AND ELECTRONIC APPARATUS
    8.
    发明申请
    SURFACE-EMITTING LASER AND ELECTRONIC APPARATUS 审中-公开

    公开(公告)号：US20190334318A1

    公开(公告)日：2019-10-31

    申请号：US16463309

    申请日：2017-10-19

    Applicant: Sony Corporation

    Inventor： Tatsushi HAMAGUCHI ,  Jugo MITOMO ,  Hiroshi NAKAJIMA ,  Masamichi ITO ,  Susumu SATO ,  Noriyuki FUTAGAWA

    IPC: H01S5/187 ,  H01S5/125

    Abstract: A surface-emitting laser according to an embodiment of the present disclosure includes a current constriction region having an opening and formed by impurities injected into a laminate from side of a second semiconductor layer; and a first DBR layer on side of a first semiconductor layer and a second DBR layer on the side of the second semiconductor layer having the laminate interposed therebetween at a position facing the opening. At the opening, an opening diameter close to the first DBR layer is larger than an opening diameter close to the second DBR layer.

    LIGHT-EMITTING ELEMENT AND METHOD OF MANUFACTURING THE SAME
    9.
    发明申请
    LIGHT-EMITTING ELEMENT AND METHOD OF MANUFACTURING THE SAME 审中-公开

    公开(公告)号：US20190267774A1

    公开(公告)日：2019-08-29

    申请号：US16345803

    申请日：2017-09-01

    Applicant: Sony Corporation

    Inventor： Susumu SATO ,  Tatsushi HAMAGUCHI ,  Shoichiro IZUMI ,  Noriyuki FUTAGAWA ,  Masamichi ITO ,  Jugo MITOMO ,  Hiroshi NAKAJIMA

    IPC: H01S5/183 ,  H01S5/343

    Abstract: A light-emitting element includes: a laminated structure body 20 which is formed from a GaN-based compound semiconductor and in which a first compound semiconductor layer 21 including a first surface 21a and a second surface 21b that is opposed to the first surface 21a, an active layer 23 that faces the second surface 21b of the first compound semiconductor layer 21, and a second compound semiconductor layer 22 including a first surface 22a that faces the active layer 23 and a second surface 22b that is opposed to the first surface 22a are laminated; a first light reflection layer 41 that is provided on the first surface 21a side of the first compound semiconductor layer 21; and a second light reflection layer 42 that is provided on the second surface 22b side of the second compound semiconductor layer 22. The first light reflection layer 41 includes a concave mirror portion 43, and the second light reflection layer 42 has a flat shape.

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